Abstract: A mounting structure includes: a substrate; a conductive portion (a first conductive portion and a second conductive portion); a resistor arranged on a path through which a current flows in the conductive portion; and a detection wiring portion (a first detection wiring and a second detection wiring) electrically connected to the resistor. The first conductive portion includes a first pad portion arranged on a first side in a first direction. The second conductive portion includes a second pad portion offset from the first pad portion to a second side in the first direction. The mounting structure further includes a first conductive bonding member for bonding a first pad obverse surface and the resistor (the first portion), and a second conductive bonding member for bonding a second pad obverse surface and the resistor (the second portion).

Abstract: A semiconductor module includes a first terminal configured to be fed with a first potential, a second terminal, a third terminal configured to be fed with a second potential lower than the first potential, a first switch connected between the first and second terminals, a second switch connected between the second and third terminals, a first driver configured to turn on and off the first switch, and a second driver configured to turn on and off the second switch. The first driver is configured to set, based on a voltage fed to the second terminal, an inhibition period in which the first switch is inhibited from being turned on.

Abstract: A semiconductor device handling apparatus that moves a device under test (DUT) so that a terminal on a first surface of the DUT contacts a contact part of a semiconductor device testing apparatus, the semiconductor device handling apparatus includes a holding part that holds a second surface of the DUT and an optical probe that inputs and outputs an optical signal to and from an optical connection part on the second surface of the DUT.

Abstract: Provided is a novel production system that does not involve, or can minimize, the transport of liquid ammonia in the production of an organic compound or the production of a microorganism by microbial fermentation. A production system for an organic compound or a microorganism includes: an ammonia synthesis apparatus in which an ammonia-containing gas is synthesized by reaction of a source gas containing hydrogen and nitrogen in the presence of a supported ruthenium catalyst; and a culture apparatus that cultures a microorganism having organic compound productivity using ammonia originating from the ammonia-containing gas obtained by using the ammonia synthesis apparatus.

Abstract: A semiconductor device includes high-side and low-side switching elements connected in series to form a switching arm, a high-side driver IC for driving the high-side switching element, and, on a chip separate from the high-side switching element, a low-side driver IC for driving the low-side switching element. The driver IC includes a first controller for monitoring a switching voltage appearing at the node where the high-side and low-side switching elements are connected together. When a first driving control signal fed in from outside the semiconductor device instructs to turn on the high-side switching element, the first controller determines whether or not to permit the high-side switching element to be turned on based on a result of checking the switching voltage.

Abstract: An electronic device includes a first electronic component including a first main body, a second electronic component including a second main body, a mounting substrate having a mounting surface, and a heat dissipator having an attaching surface. The mounting surface and the attaching surface face each other in the z direction. The first main body and the second main body are disposed between the mounting substrate and the heat dissipator in the z direction and arranged side by side in the x direction. The first main body has a first front surface facing the attaching surface and a first back surface facing the mounting surface. The second main body has a second front surface facing the attaching surface and a second back surface facing the mounting surface. The dimension of the second main body in the z direction is smaller than the dimension of the first main body in the z direction. The first front surface and the second front surface overlap with each other as viewed in the x direction.

Abstract: A semiconductor device includes a first and a second output transistor on a high and a low side respectively, a first terminal connected to the connection node between the first and second output transistors, and a second terminal configured to be connected via a bootstrap capacitor to the first terminal. The first output transistor is driven based on a voltage between the first and second terminals. A switching circuit is provided between a terminal fed with a predetermined control supply voltage and the second terminal. The switching circuit includes a first and a second switching element, which are N-channel MOSFETs connected in series. According to the voltage at the first terminal, the first and second switching elements are turned on or off.

Abstract: A power semiconductor module includes a first terminal which protrudes from a first body side surface of a module body, and a second terminal which protrudes from a second body side surface. The first terminal includes a first portion which protrudes from the first body side surface, a second portion which extends the first portion beyond a body rear surface on the reverse side from from a body main surface, and a third portion which extends from the second portion. The second terminal includes a first portion which protrudes from the second body side surface, a second portion which extends from the first portion beyond the body rear surface on the reverse side from the body main surface, and a third portion which extends from the second portion.

Abstract: A direct-current voltage is applied to a series circuit composed of a switching transistor, a sense resistor, and a coil. A control circuit is configured to be capable of performing current control in which the control circuit, after turning on the switching transistor, determines a turn-off time point of the switching transistor based on a sense voltage appearing across the sense resistor, and to turn off the switching transistor during the current control if, despite a predetermined time having passed after the switching transistor being turned on, the sense voltage does not reach a predetermined threshold voltage.

Abstract: A semiconductor module includes a first terminal configured to be fed with a first potential, a second terminal, a third terminal configured to be fed with a second potential lower than the first potential, a first switch connected between the first and second terminals, a second switch connected between the second and third terminals, a first driver configured to turn on and off the first switch, and a second driver configured to turn on and off the second switch. The first driver is configured to set, based on a voltage fed to the second terminal, an inhibition period in which the first switch is inhibited from being turned on.

Abstract: In a laser cutting method, a cut slit of a welding protruding-tab configured to be bent by laser cutting along an outline of a processed part and press a peripheral surface of the processed part is laser-cut in advance in a periphery of the processed part that is cut from a workpiece, and an outline slit is formed by performing laser cutting along the outline of the processed part and a free end of the welding protruding-tab is welded to the peripheral surface of the processed part. According to the above described laser cutting method, it is possible to retain the processed part reliably and stably for a long period, and it is possible to easily separate the processed part from the workpiece with almost no trace left on the processed part.

Abstract: A semiconductor device includes: a first semiconductor element to switch between an electrical communication state and a blocked state in accordance with a first driving signal; a first control element to generate the first driving signal based on a first input signal; a second semiconductor element to switch between an electrical communication state and a blocked state in accordance with a second driving signal; and a second control element to generate the second driving signal based on a second input signal. The second input signal is input to the first control element, and thus the first control element determines whether or not the second semiconductor element is in the electrical communication state based on the second input signal. When the second semiconductor element is in the electrical communication state, the first control element delays switching of the first semiconductor element from the blocked state to the electrical communication state.

Abstract: Laser cutting on a plated steel sheet is executed by cutting the plated steel sheet by irradiating the plated steel sheet covered with a plate metal with laser light at a wavelength in a 1 micrometer band; and emitting assist gas onto a cut surface of the plated steel sheet, the cut surface being formed in the step of cutting, to make the plate metal fused by irradiation of the laser light flow to the cut surface so as to cover the cut surface with the plate metal.

Abstract: A semiconductor device includes a substrate, a conductive part formed on a front surface of the substrate, a semiconductor chip disposed on the front surface of the substrate, a control unit that controls the semiconductor chip, a sealing resin that covers the semiconductor chip, the control unit and the conductive part, and a first lead bonded to the conductive part and partially exposed from the sealing resin. The conductive part includes a first pad and a second pad disposed apart from each other. The first lead is bonded to the first pad and the second pad.

Abstract: A semiconductor device includes a substrate, a conductive portion, a sealing resin, a plurality of semiconductor chips, and a plurality of temperature detection elements. The substrate has a substrate obverse surface and a substrate reverse surface that face opposite sides in a thickness direction. The conductive portion is formed on the substrate obverse surface. The sealing resin covers at least a part of the substrate. The sealing resin also covers the entire conductive portion. The plurality of semiconductor chips are disposed on the substrate obverse surface. The plurality of temperature detection elements are disposed on the substrate obverse surface. The number of temperature detection elements is equal to or greater than the number of semiconductor chips.

Abstract: An electronic device includes: a substrate with obverse and reverse surfaces spaced apart in a thickness direction; an electronic element having an obverse surface formed with a first obverse surface electrode; a wiring portion on the substrate obverse surface and configured to transmit a control signal for the electronic element; a conduction member with obverse and reverse surfaces spaced apart in the thickness direction, where the reverse surface is joined to the wiring portion; a conductive first lead on the substrate obverse surface; and a first connecting member joined to the obverse surface of the conduction member and the first obverse surface electrode. The first lead includes a first pad portion spaced apart from the wiring portion and to which the electronic element is joined. The wiring portion and the first obverse surface electrode are electrically connected to each other via the conduction member and the first connecting member.

Abstract: An electronic device includes: an insulating substrate including an obverse surface facing a thickness direction; a wiring portion formed on the substrate obverse surface and made of a conductive material; a lead frame arranged on the substrate obverse surface; a first and a second semiconductor elements electrically connected to the lead frame; and a first control unit electrically connected to the wiring portion to operate the first semiconductor element as a first upper arm and operate the second semiconductor element as a first lower arm. The lead frame includes a first pad portion to which the first semiconductor element is joined and a second pad portion to which the second semiconductor element is joined. The first and second pad portions are spaced apart from the wiring portion and arranged in a first direction with a first separation region sandwiched therebetween, where the first direction is orthogonal to the thickness direction.