Semiconductor device

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Description

FIG. 1 is a front elevational view of a semiconductor device, showing our new design;

FIG. 2 is a rear elevational view thereof;

FIG. 3 is a top plan view thereof;

FIG. 4 is a bottom plan view thereof;

FIG. 5 is a left side elevational view thereof;

FIG. 6 is a right side elevational view thereof;

FIG. 7 is a cross-sectional view thereof, taken along line 7--7 in FIG. 1;

FIG. 8 is a cross-sectional view thereof, taken along line 8--8 in FIG. 1; and,

FIG. 9 is a front, right side and bottom perspective view thereof.

Referenced Cited
U.S. Patent Documents
D288922 March 24, 1987 Olia
D317592 June 18, 1991 Yoshizawa
D359028 June 6, 1995 Siegel et al.
D394244 May 12, 1998 Majumdar et al.
D396211 July 21, 1998 Enomoto et al.
D401912 December 1, 1998 Majumdar et al.
Patent History
Patent number: D428859
Type: Grant
Filed: Jun 15, 1999
Date of Patent: Aug 1, 2000
Assignee: Mitsubishi Denki Kabushiki Kaisha (Tokyo)
Inventors: Hisashi Kawafuji (Tokyo), Mitsutaka Iwasaki (Tokyo), Gourab Majumdar (Tokyo), Toshiaki Shinohara (Tokyo)
Primary Examiner: Brian N. Vinson
Law Firm: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
Application Number: 0/106,586
Classifications
Current U.S. Class: Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)
International Classification: 1303;