Abstract: Disclosed are a robot cleaner, a refrigerator, a container transfer system, and a method of transferring and retrieving a container using the robot cleaner. The method of transferring a container include returning a robot cleaner to a position guide device installed at a refrigerator, mounting the robot cleaner on the position guide device, transferring, by the refrigerator, a container built in the refrigerator to mount the container on the robot cleaner, and moving the robot cleaner on which the container is mounted to a target position.

Abstract: A radiator frame having an antenna radiator formed on a surface thereof and a method of manufacturing the same are provided. The radiator frame includes: a radiator including an antenna pattern portion configured to transmit or receive a signal, and a connection terminal portion configured to electrically connect the antenna pattern portion and a circuit board; and a molding frame connected to the radiator such that the antenna pattern portion is exposed at one surface of the molding frame and the connection terminal portion is exposed at another surface of the molding frame opposing the one surface of the molding frame. The connection terminal portion may include a plated layer exposed at the other surface of the molding frame to contact the circuit board.

Abstract: A system for providing fonts, an apparatus for providing Metafont fonts, and a method for controlling the apparatus are disclosed. The disclosed apparatus, which connects to a device to provide Metafont fonts, includes: a communication module configured to receive a first font request from the device for the font engine, where the first font request includes at least one font style parameter and the ID information of a Metafont font file; and an operating module configured to determine whether or not a font file having ID information identical to the ID information of the font file included in the first font request exists in a first external memory, and if a font file having identical ID information exists, determine whether or not the font converted from the font file having identical ID information is saved in a second external memory.

Abstract: An EV charging control apparatus may include a controller receiving a charging approval message for an EV from a charging management server, starting a charging to the EV in response to the charging approval message, measuring and accumulating an amount of energy charged to the EV, recognizing a charging termination operation from a user of the EV or the EV, and deriving charging information based on the amount of energy charged in response to the charging termination operation, and a short-range wireless communication module establishing a connection with a short-range wireless communication module mounted on the EV, and transmitting the charging information to the EV

Abstract: A semiconductor device includes a semiconductor substrate, a circuit layer including an interlayer insulating layer on an upper surface of the substrate, and a conductive via penetrating through the interlayer insulating layer and the substrate, and electrically connected to the circuit layer. The device further includes an insulating layer surrounding the conductive via, and located between the conductive via and the substrate and between the conductive via and interlayer insulating layer, and a buffer layer located between the insulating layer and the conductive via, and overlapping at least a portion of the interlayer insulating layer in a depth direction of the conductive via.

Abstract: Provided herein are semiconductor devices with through electrodes and methods of fabricating the same. The methods may include providing a semiconductor substrate having top and bottom surfaces facing each other, forming on the top surface of the semiconductor substrate a main via having a hollow cylindrical structure and a metal line connected to the main via, forming an interlayered insulating layer on the top surface of the semiconductor substrate to cover the main via and the metal line, removing a portion of the semiconductor substrate to form a via hole exposing a portion of a bottom surface of the main via, and forming in the via hole a through electrode that is electrically connected to the main via. The bottom surface of the main via is overlapped by a circumference of the via hole, when viewed in a plan view.

Abstract: A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least one metal interconnection electrically connected to the integrated circuit, an upper dielectric layer disposed on the inter-metal dielectric layer, a through-electrode penetrating the inter-metal dielectric layer, the interlayer dielectric layer, and the semiconductor substrate, a via-dielectric layer surrounding the through-electrode and electrically insulating the through-electrode from the semiconductor substrate. The via-dielectric layer includes one or more air-gaps between the upper dielectric layer and the interlayer dielectric layer.

Abstract: A wafer-to-wafer bonding structure includes a first wafer including a first conductive pad in a first insulating layer and a first barrier layer surrounding a lower surface and side surfaces of the first conductive pad, a second wafer including a second conductive pad in a second insulating layer and a second barrier layer surrounding a lower surface and side surfaces of the second conductive pad, the second insulating layer being bonded to the first insulating layer, and at least a portion of an upper surface of the second conductive pad being partially or entirely bonded to at least a portion of an upper surface of the first conductive pad, and a third barrier layer between portions of the first and second wafers where the first and second conductive pads are not bonded to each other.

Abstract: A pad is disposed on a substrate. A bump structure is disposed on the pad and electrically connected to the pad. The bump structure includes a first copper layer and a second copper layer sequentially stacked on the pad and a solder ball on the second copper layer. A first X-ray diffraction (XRD) peak intensity ratio of (111) plane to (200) plane of the first copper layer is greater than a second XRD peak intensity ratio of (111) plane to (200) plane of the second copper layer.

Abstract: Integrated circuit (IC) devices are provided including a substrate having a first sidewall defining a first through hole that is a portion of a through-silicon via (TSV) space, an interlayer insulating layer having a second sidewall and a protrusion, wherein the second sidewall defines a second through hole providing another portion of the TSV space and communicating with the first through hole, and the protrusion protrudes toward the inside of the TSV space and defines an undercut region in the first through hole, a TSV structure penetrating the substrate and the interlayer insulating layer and extending through the first through hole and the second through hole, and a via insulating layer surrounding the TSV structure in the first through hole and the second through hole.

Abstract: Semiconductor devices are provided. The semiconductor devices include a substrate, a first interlayer insulating layer disposed on a front-side of the substrate, a TSV structure passing through the first interlayer insulating layer and the substrate. The TSV structure has a bottom end protruding from a back-side of the substrate, a back-side insulating layer and a back-side passivation layer disposed on the back-side of the substrate, and a bumping pad buried in the back-side insulating layer and the back-side passivation layer and disposed on the bottom end of the TSV structure. The bottom end of the TSV structure protrudes into the back-side bumping pad, and top surfaces of the back-side passivation layer and the back-side bumping pad are coplanar.

Abstract: Disclosed are a method and a system for providing an indoor positioning service. A method for providing an indoor positioning service comprises receiving a request to provide an indoor positioning service from a user terminal; receiving, in response to the request, information for wireless access points located near the user terminal; calculating the similarity between the items of information, and accuracy of the locations of the wireless access points on the basis of the received information for the wireless access points and information for the wireless access point collected from each point positioned inside the building; and determining the current location of the user terminal on the basis of the similarity and accuracy of the location.

Abstract: A method and apparatus for providing positional information using wireless fidelity (WiFi) information is provided. A method of providing positional information at a mobile terminal may include collecting WiFi access point (AP) information by scanning for a WiFi AP in a vicinity of the mobile terminal, extracting facility information associated with a facility associated with the WiFi AP, and determining the positional information of the mobile terminal based on the extracted facility information.

Abstract: An antenna apparatus includes an antenna structure and an integrated circuit (IC). The antenna structure includes a magnetic core extended in one direction, a conductive wire wound around the magnetic core to form a coil, and a magnetic material surrounding the conductive wire in a portion of the coil. The IC supplies an electrical current to the coil. In addition, a portion of magnetic flux generated by flow of the electrical current supplied to the coil exits from one end surface of the magnetic core and enters another end surface of the magnetic core opposite to the one end surface in the one direction. Another portion of the magnetic flux flows through the magnetic material surrounding the conductive wire.

Abstract: A multi-stacked device includes a lower device having a lower substrate, a first insulating layer on the lower substrate, and a through-silicon-via (TSV) pad on the first insulating layer, an intermediate device having an intermediate substrate, a second insulating layer on the intermediate substrate, and a first TSV bump on the second insulating layer, an upper device having an upper substrate, a third insulating layer on the upper substrate, a second TSV bump on the third insulating layer, and a TSV structure passing through the upper substrate, the third insulating layer, the second insulating layer, and the intermediate substrate to be connected to the first TSV bump, the second TSV bump, and the TSV pad. An insulating first TSV spacer between the intermediate substrate and the TSV structure and an insulating second TSV spacer between the upper substrate and the TSV structure are spaced apart along a stacking direction.

Abstract: A light emitting device module including a first and second lead frames, a light emitting device electrically connected to the first and second lead frames, the light emitting device includes a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a resin layer surrounding the light emitting device, a PSR (photo solder resist) layer disposed between the first and second lead frames and the second lead frame and a sidewall disposed at the peripheral area of the light emitting device and including an inclined plane formed on at least one side surface thereof.

Abstract: Provided is a method of manufacturing graphene by unzipping doped carbon materials by an external stimulus and a graphene manufactured therefrom.

Abstract: Disclosed is a method of manufacturing a heat-resistant component using granules. More particularly, the method of manufacturing a heat-resistant component includes a step of preparing granules by spraying a mixture including a metal powder and a slurry material into a housing equipped with a disc and rotating the disc; a step of preparing a molded object by compression-molding the granules; a step of preparing a sintered object by sintering the molded object at about 1,000° C. to about 1,600° C.; and a step of adjusting dimensions by cutting the sintered object, wherein the housing is sealed and hot air at about 70° C. to about 200° C. is supplied into the housing.

Abstract: Provided is a rapid manufacturing process of ferrous and non-ferrous parts using a plasma electron beam in which the plasma electron beam is workable even in a low vacuum pressure environment and has a relatively large radiation range, productivity of the process is improved as a high-power beam can be emitted to a ferrous and non-ferrous powder, and production costs are reduced due to low maintenance and manufacturing costs.

Abstract: Disclosed is an integrated fluorine gasket manufactured by injection molding for hydrogen fuel cells. In particular, a fluorine compound having a fluorine content of about 60 to 75 parts by weight based on 100 parts by weight of a fluoroelastomer is disposed in a gasket. The resulting fluorine gasket is integrated with a thin bipolar plate having a thickness of about 200 ?m or less to have a thickness of about 750 ?m or less by injection molding on the thin bipolar plate and by cross-linking.