Abstract: An ultrasonic electronic cigarette atomizer and an electronic cigarette, wherein the ultrasonic electronic cigarette atomizer comprises a shell, a tobacco tar storage bottle, an ultrasonic atomization piece and a flaky tobacco tar storage body fit to one side face of the ultrasonic atomization piece are provided in the shell, and a tobacco tar guide body is fixed to an outer wall of at least one side of the tobacco tar storage bottle; one side face of the tobacco tar guide body is communicated with the inner cavity of the tobacco tar storage bottle, and the other side face of the tobacco tar guide body is contacted with the side face of the tobacco tar storage body which is away from the ultrasonic atomization piece; and the ultrasonic atomization piece and the tobacco tar storage body are provided to be parallel to the length direction of an electronic cigarette.

Abstract: Semiconductor structures include a channel region, a gate dielectric on the channel region, source and drain structures on opposite sides of the channel region, and a gate conductor between the source and drain structures on the gate dielectric. The source and drain structures include source and drain silicides. The gate conductor includes a gate conductor silicide. The gate conductor silicide is thicker than the source and drain silicides.

Abstract: This invention relates to a vapor chamber (100) comprising a first thermally conductive plate (110) and a second thermally conductive plate (120) separated from each other by a plurality of bridging elements (140) to form a cavity (130) having a first height, H1 (001). The vapor chamber (100) comprises a bending section (151) and a non-bending section (152). The bending section (151) is configured to provide a bend having a first volume fraction (V1) of bridging elements (140), and the non-bending section (152) having a second volume fraction (V2) of bridging elements (140). A ratio of the first volume fraction (V1) and the second volume fraction (V2) is less than 0.7.

Abstract: Compounds of Formula (IA) (Targeting Moiety)-(Linker)-(Protease Ligand)??(IA), where the targeting moiety is an oligonucleotide capable of binding a target protein and the protease ligand is a ligand capable of binding a protease, and methods for the use thereof are provided. Also provided are compounds of Formula (IB) (Targeting Moiety)-(Linker)-(Protease Ligand or E3 Ligase Ligand)??(IB), where the targeting moiety is an oligonucleotide capable of binding a target protein, the protease ligand is a ligand capable of binding a protease, and the E3 ligase ligand is a ligand capable of binding an E3 ligase, and methods for the use thereof are provided.

Abstract: A germ-repellent paper product contains a paper substrate and a germ-repellent overprint varnish. The germ-repellent overprint varnish contains a varnish and a germ-repellent agent. The germ-repellent overprint varnish is coated onto the paper substrate to form a germ-repellent paper product. A method for manufacturing such a germ-repellent paper product is also provided.

Abstract: Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a substrate having a top surface, a trench isolation region in the substrate, and a base layer on the top surface of the substrate. The base layer extending across the trench isolation region. A first bipolar junction transistor includes a first collector in the substrate and a first emitter on a first portion of the first base layer. The first portion of the first base layer is positioned between the first collector and the first emitter. A second bipolar junction transistor includes a second collector in the substrate and a second emitter on a second portion of the first base layer. The second portion of the first base layer is positioned between the second collector and the second emitter.

Abstract: Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a semiconductor layer, a substrate, and a dielectric layer disposed between the semiconductor layer and the substrate. The structure further comprises a first bipolar junction transistor including a first collector in the substrate, a first emitter, and a first base layer. The first base layer extends through the dielectric layer from the first emitter to the first collector. The structure further comprises a second bipolar junction transistor including a second collector in the substrate, a second emitter, and a second base layer. The second base layer extends through the dielectric layer from the second emitter to the second collector. The second base layer is connected to the first base layer by a section of the semiconductor layer to define a base line.

Abstract: A display apparatus and a display method for a multi-layer superimposition are provided. When a display presents a user interface, a touch trajectory from a user can be detected via a touch component, and a touch trajectory pattern is present in a first layer; upon obtaining the touch trajectory pattern, an interpolation operation can also be performed on the touch trajectory pattern in the first layer according to a background pattern in a second layer; finally, a converted pattern obtained after the interpolation operation and the background pattern are superimposed and presented on the display.

Abstract: A system and method for clean and low-carbon in-situ disposal of waste incineration fly ash includes a waste incineration system and a fly ash disposal system. The fly ash disposal system includes a water washing system, an MVR system, and a dioxin removal system. The water washing system includes a water washing device and a press filtering device. The dioxin removal system includes a heating device, an activated carbon adsorption device, and a heat pump system. The MVR system includes a crystallizer, a heater, a vapor compressor, and other equipment. The waste incineration system is coupled with the fly ash disposal system nearby to achieve in-situ disposal of fly ash, avoiding the logistics cost and secondary pollution problems of long-distance transportation of fly ash, and greatly reducing energy and water resource consumption.

Abstract: In an exemplary process, a speech input including a referenced virtual object is received. Based on the speech input, a first reference set is obtained. The first reference set is then compared to a plurality of second reference sets. Based on the comparison, a second reference set from the plurality of second reference sets is obtained. The second reference set may be identified based on a matching score between the first reference set and the second reference set. An object is then identified based on the second reference set. Based on the identified object, the reference virtual object is displayed.

Abstract: A network switch includes a plurality of ports for communicating over a network. Processing circuitry processes inbound frames received from the network via the ports and sends outbound frames to the network. Remote management circuitry (RMU) is responsive to commands received from a host device external to the network switch. The RMU receives via one of the ports a remote access request frame from the host device, wherein at least part of the remote access request frame is encrypted, and decrypts the remote access request frame. In response to successful decryption of the part of the remote access request frame, the RMU accesses one or more configuration registers of the network switch in accordance with the remote access request frame, composes a remote access response frame, at least a portion of the remote access response frame being encrypted, and sends the remote access response frame to the host device.

Abstract: The invention provides a vapor chamber element (1000) comprising a first part (1100), a second part (1200), and a third part (1300), wherein the second part (1200) and third part (1300) are associated to the first part (1100), wherein the second part (1200) and third part (1300) are configured spatially separated with a first distance (d1) along a first length (L1), defining an opening (200) between the second part (1200) and the third part (1300); wherein the vapor chamber element (1000) comprises one or more vapor chambers (100) at least partially comprised by the second part (1200) and third part (1300); wherein the vapor chamber element (1000) further comprises one or more heat fin elements (2000), wherein the one or more heat fin elements (2000) comprise one or more heat fins (2100), wherein the one or more heat fin elements (2000) bridge the first distance (d1) and close a part of the opening (200).

Abstract: An Ethernet communication device includes a data interface and circuitry. The data interface is configured for communicating with a neighbor device. The circuitry is configured to exchange Ethernet data frames with the neighbor device over the data interface, wherein successive data frames are separated in time by an Inter-Packet Gap (IPG) having at least a predefined minimal duration, and to further exchange with the neighbor device, over the data interface, during the IPG between Ethernet frames exchanged on the data interface, a wake-up/sleep command that instructs switching between an active mode and a sleep mode.

Abstract: Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer, a second terminal having a second raised semiconductor layer, and a base layer positioned laterally between the first raised semiconductor layer and the second raised semiconductor layer. The structure further includes a spacer positioned laterally positioned between the first raised semiconductor layer and the base layer. The spacer includes a dielectric material and an airgap surrounded by the dielectric material.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first gate electrode, a second gate electrode, and an isolation structure. The first gate electrode is over the substrate and the second gate electrode is laterally adjacent thereto. The isolation structure is in contact with the first gate electrode and the second gate electrode.

Abstract: Assemblies and methods for directing a flow of air through a compressor section of a gas turbine engine are disclosed. A method includes receiving the flow of air over a strut extending radially across a substantially annular gas path of the gas turbine engine, and at least partially confining and modifying a strut wake generated in the flow of air by the strut using one or more variable orientation guide vanes.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with thermal conductor and methods of manufacture. The structure includes: a base formed within a semiconductor substrate; a thermal conductive material under the base and extending to an underlying semiconductor material; an emitter on a first side of the base; and a collector on a second side of the base.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a collector contact and methods of manufacture. The structure includes: a lateral bipolar transistor which includes an emitter, a base and a collector; an emitter contact to the emitter; a base contact to the base; and a collector contact to the collector and extending to an underlying substrate underneath the collector.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with self-aligned asymmetric spacer and methods of manufacture. The structure includes: a base formed on a semiconductor substrate; an asymmetrical spacer surrounding the base; an emitter on a first side of the base and separated from the base by the asymmetrical spacer; and a collector on a second side of the base and separated from the base by the asymmetrical spacer.

Abstract: The invention provides a light generating device (100) comprising (i) n filaments (200), (ii) an power distribution unit (400), and (iii) electronics (500); wherein: (a) each of the n filaments (200) comprises one or more solid state light sources (10), wherein n?1, wherein each of the n filaments (200) comprises at least m electrical contacts (221), wherein m?2; and wherein the n filaments (200) are configured to generate filament light (201); (b) the power distribution unit (400) comprises k electrically conductive tracks (410) separated by electrically insulating material (420), wherein k?2; (c) at least two of the electrical contacts (221) of the n filaments (200) are functionally coupled to at least two different electrically conductive tracks (410); (d) the at least two different electrically conductive tracks (410) are functionally coupled to the electronics (500); and (e) the electronics (500) comprise one or more of a control system, a driver, and a transformer.