Patents by Inventor Hong Yu

Hong Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11928019
    Abstract: A first serial management interface device includes one or more input/output pins and a controller coupled to the one or more input/output pins. The controller receives a first frame from a second serial management interface device via a first input/output pin and generates a first error code based on the first frame received from the second serial management interface device. The controller receives a second frame from the second serial management interface device via a second input/output pin subsequent to receiving the first frame. The second frame includes a second error code. The controller compares the first error code to the second error code to determine whether first error code and the second error code match.
    Type: Grant
    Filed: September 2, 2022
    Date of Patent: March 12, 2024
    Assignee: MARVELL ASIA PTE LTD
    Inventors: Dance Wu, Chuanhai Zhou, Hong Yu Chou
  • Patent number: 11923417
    Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a substrate having a well, a first terminal including a first raised semiconductor layer, a second terminal including a second raised semiconductor layer, and a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The base layer has an overlapping arrangement with the well. The structure further includes a dielectric layer positioned in a vertical direction between the first terminal and the substrate, the second terminal and the substrate, and the base layer and the substrate.
    Type: Grant
    Filed: March 11, 2022
    Date of Patent: March 5, 2024
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Hong Yu, Shesh Mani Pandey
  • Publication number: 20240066033
    Abstract: Disclosed herein are RNA methyltransferase inhibitors and methods of using and making the same. The inhibitors may be used in a method for the treatment of a subject in need of a treatment for a cancer by administering an effective amount of the RNA methyltransferase inhibitor and an effective amount of a DNA damaging agent to the subject.
    Type: Application
    Filed: August 9, 2021
    Publication date: February 29, 2024
    Inventors: Hong-yu Li, Wei Yan, Li Lan
  • Publication number: 20240059685
    Abstract: Disclosed herein are Piezo1 agonists. Also disclosed herein are methods of stimulating tissue anabolism in a subject comprising administering an effective amount of a Piezo1 agonist and methods for chemically mimicking mechanical stimulation of a cell expressing Piezo1 comprising contacting a cell expressing Piezo1 with an effective amount of a Piezo1 agonist.
    Type: Application
    Filed: October 5, 2020
    Publication date: February 22, 2024
    Inventors: Hong-yu Li, Jinhu Xiong, Wei Yan, Charles O'Brien, Maria Schuller De Almeida
  • Publication number: 20240063225
    Abstract: A substrate is provided. The substrate includes a base, a semiconductor layer over the base, and an insulator layer between the base and the semiconductor layer. The semiconductor layer has a first semiconductor layer portion having a first thickness, a second semiconductor layer portion having a second thickness, and a third semiconductor layer portion having a third thickness, and the first thickness, the second thickness, and the third thickness are different from each other.
    Type: Application
    Filed: August 17, 2022
    Publication date: February 22, 2024
    Inventors: DAVID PRITCHARD, HONGRU REN, SHAFIULLAH SYED, HONG YU, MAN GU, JIANWEI PENG
  • Patent number: 11908898
    Abstract: Embodiments of the disclosure provide a lateral bipolar transistor with a base layer of varying horizontal thickness, and related methods to form the same. A lateral bipolar transistor may include an emitter/collector (E/C) layer on a semiconductor layer. A first base layer is on the semiconductor layer and horizontally adjacent the E/C layer. The first base layer has a lower portion having a first horizontal width from the E/C layer. The first base layer also has an upper portion on the lower portion, with a second horizontal width from the E/C layer greater than the first horizontal width. A second base layer is on the first base layer and adjacent a spacer. The upper portion of the first base layer separates a lower surface of the second base layer from the E/C layer.
    Type: Grant
    Filed: November 30, 2021
    Date of Patent: February 20, 2024
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Haiting Wang, Hong Yu, Zhenyu Hu, Alexander M. Derrickson
  • Publication number: 20240047555
    Abstract: A disclosed structure includes a FET with a gate structure (e.g., a RMG structure) having a scaled effective gate length proximal to a channel region and a large conductor surface distal to the channel region. The gate structure includes a first portion within a lower region of a gate opening proximal to the channel region and a second portion within a wider upper region. In this case, the gate structure can include a conformal gate dielectric layer that lines the gate opening and a gate conductor layer thereon. Alternatively, the gate structure includes a first portion including a short gate dielectric layer proximal to the channel region and a second portion (including a conformal gate dielectric layer and gate conductor layer) on the lower portion in a gate opening. Optionally, the structure also includes an additional FET without the scaled effective gate length. Also disclosed are associated methods.
    Type: Application
    Filed: August 2, 2022
    Publication date: February 8, 2024
    Inventors: Anton V. Tokranov, Saloni Chaurasia, Hong Yu, Jagar Singh
  • Patent number: 11892560
    Abstract: A calibration system for multi-sensor extrinsic calibration in a vehicle includes one or more calibration targets provided around an external environment within a threshold distance of the vehicle. Each of the one or more calibration targets includes a combination of sensor targets configured to be measured by and used for calibrating a pair of sensors selected from the group consisting of a first sensor, a second sensor or a third sensor. The system also includes a vehicle placement section configured to accommodate the vehicle on the vehicle placement section for detection of the one or more calibration targets.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: February 6, 2024
    Assignee: NIO Technology (Anhui) Co., Ltd
    Inventors: Hiu Hong Yu, Zhenxiang Jian, Tong Lin, Xu Chen, Zhongkui Wang, Antonio Antonellis Rufo, Waylon Chen
  • Patent number: 11888031
    Abstract: In a disclosed semiconductor structure, a lateral bipolar junction transistor (BJT) has a base positioned laterally between a collector and an emitter. The base includes a semiconductor fin with a first portion that extends from a substrate through an isolation layer, a second portion on the first portion, and a third portion on the second portion. The collector and emitter are on the isolation layer and positioned laterally immediately adjacent to opposing sidewalls of the second portion of the semiconductor fin. In some embodiments, the BJT is a standard BJT where the semiconductor fin (i.e., the base), the collector, and the emitter are made of the same semiconductor material. In other embodiments, the BJT is a heterojunction bipolar transistor (HBT) where a section of the semiconductor fin (i.e., the base) is made of a different semiconductor material for improved performance. Also disclosed is a method of forming the structure.
    Type: Grant
    Filed: November 30, 2021
    Date of Patent: January 30, 2024
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Hong Yu, Judson R. Holt, Zhenyu Hu
  • Patent number: 11877600
    Abstract: An atomizer and an electronic cigarette with an atomizer are disclosed. The atomizer includes an atomizer body, in which the atomizer body includes a shell, a suction nozzle assembly mounted at the top of the shell, a liquid chamber and an atomization core disposed in the shell. An electronic cigarette with the atomizer is disclosed as well. The electronic cigarette can prevent liquid accumulation caused by long-time static placement and various misoperations. Furthermore, cigarette liquid does not leak during injection. The components of the atomizer such as the suction nozzle or the base do not need to be disassembled, so that the cigarette liquid is convenient to inject, and the user experience is good.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: January 23, 2024
    Assignee: CHINA TOBACCO HUNAN INDUSTRIAL CO., LTD.
    Inventors: Jianfu Liu, Kejun Zhong, Xiaoyi Guo, Wei Huang, Hong Yu, Yuangang Dai, Xinqiang Yin, Jianhua Yi, Yang Wang
  • Patent number: 11881395
    Abstract: Embodiments of the disclosure provide a lateral bipolar transistor on a semiconductor fin and methods to form the same. A bipolar transistor structure according to the disclosure may include a doped semiconductor layer coupled to a base contact. A first semiconductor fin on the doped semiconductor layer may have a first doping type. An emitter/collector (E/C) material may be on a sidewall of an upper portion of the first semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.
    Type: Grant
    Filed: December 17, 2021
    Date of Patent: January 23, 2024
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Judson R. Holt, Hong Yu, Alexander M. Derrickson
  • Publication number: 20240023272
    Abstract: An electronic device includes a casing having sliding rails and fan modules disposed in the casing. Each fan module includes a fan having an air inlet, a baffle disposed at the air inlet, an electromagnet electrically connected to the fan, a ferromagnetic slider, and a first connector connected between the ferromagnetic slider and the baffle. The ferromagnetic slider is disposed on the corresponding sliding rail and is located between the electromagnet and the fan for moving between the electromagnet and the fan along the corresponding sliding rail. When the fan is functioning, the electromagnet attracts the ferromagnetic slider to drive the baffle to expose the air inlet. When the fan is powered off, the electromagnet does not attract the ferromagnetic slider, the first connector drives the ferromagnetic slider away from the electromagnet, and the baffle moves to shield the air inlet.
    Type: Application
    Filed: May 31, 2023
    Publication date: January 18, 2024
    Applicant: PEGATRON CORPORATION
    Inventor: Hong-Yu Luh
  • Patent number: 11873982
    Abstract: The invention provides a vapor chamber element (1000), wherein the vapor chamber element (1000) comprises a first plate (110) and a second plate (120) with a chamber (100) in between, wherein the chamber (100) has a first height (H1), wherein the vapor chamber element (1000) further comprises bridging elements (150) bridging at least part of the first height (H1), wherein the vapor chamber element (1000) comprises a plurality of sections (130) configured along a first axis (A), wherein the plurality of sections (130) comprises (i) a bending section (131) having a first volume fraction V1 of bridging elements (150), and (ii) a basic section (133) having a second volume fraction V2 of bridging elements (150), wherein 2?V1/V2.
    Type: Grant
    Filed: April 30, 2021
    Date of Patent: January 16, 2024
    Assignee: SIGNIFY HOLDING B.V.
    Inventors: Genevieve Therese Martin, Jiang Hong Yu, Derk Tiekink
  • Publication number: 20240000784
    Abstract: Disclosed herein are RNA methyltransferase inhibitors and methods of using the same. The inhibitors may be used in a method for the treatment of a subject in need of a treatment for a cancer by administering an effective amount of an RNA methyl-transferase inhibitor to the subject.
    Type: Application
    Filed: August 9, 2021
    Publication date: January 4, 2024
    Inventors: Hong-yu Li, Wei Yan, Li Lan
  • Publication number: 20230421182
    Abstract: An electronic device, an antenna control method, and a communication chip are provided. The electronic device includes an antenna, a line switching circuit, a first communication chip, and a second communication chip. The line switching circuit is coupled to the antenna. The first communication chip is coupled to the antenna through the line switching circuit and configured to generate a slot allocation signal. The second communication chip is coupled to the antenna through the line switching circuit and configured to generate a packet distribution signal. The first communication chip and the second communication chip are communication chips of different types. The line switching circuit switches the antenna to the first communication chip or the second communication chip according to the packet distribution signal.
    Type: Application
    Filed: May 25, 2023
    Publication date: December 28, 2023
    Inventors: JIAN-JUN ZHOU, JIE-HONG YU
  • Publication number: 20230421181
    Abstract: An electronic device and an antenna control method are provided. The electronic device includes an antenna, a line switching circuit, a first communication chip, a second communication chip, and a logic circuit. The line switching circuit is coupled to the antenna. The first communication chip is coupled to the antenna through the line switching circuit and configured to generate a slot allocation signal. The second communication chip is coupled to the antenna through the line switching circuit and configured to generate a packet transceiving request signal. The first communication chip and the second communication chip are communication chips of different types. The logic circuit is coupled to the first communication chip and the second communication chip and configured to control the line switching circuit according to the slot allocation signal and the packet transceiving request signal.
    Type: Application
    Filed: May 25, 2023
    Publication date: December 28, 2023
    Inventors: JIAN-JUN ZHOU, JIE-HONG YU
  • Publication number: 20230407287
    Abstract: The disclosure discloses a method for preparing a multisubunit SCF E3 ligase with a fusion protein through in vitro reconstitution, and a use of the multisubunit SCF E3 ligase. The method for preparing a multisubunit SCF E3 ligase with a fusion protein through in vitro reconstitution disclosed by the disclsoure includes: subjecting an engineered SKP1-Cullin1-RBX1 fusion protein (referred to as eSCR) to a reaction with an F-box protein in a reaction system to obtain the multisubunit SCF E3 ligase, where the eSCR fusion protein has an amino acid sequence from position 10 to position 1062 of SEQ ID NO: 2. Experimental results show that different multisubunit SCF E3 ligases are successfully prepared with the eSCR fusion protein through in vitro reconstitution in the disclsoure; the reconstituted multisubunit E3 ligase has biological activity.
    Type: Application
    Filed: May 25, 2023
    Publication date: December 21, 2023
    Applicant: Institute of Genetics and Developmental Biology, CAS
    Inventors: Jiayang LI, Bing WANG, Huihui LIU, Hong YU, Xiangbing MENG, Guifu LIU, Mingjiang CHEN, Yanhui JING
  • Patent number: 11843044
    Abstract: Embodiments of the disclosure provide a bipolar transistor structure on a semiconductor fin. The semiconductor fin may be on a substrate and may have a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction. The semiconductor fin includes a first portion and a second portion adjacent the first portion along the length of the semiconductor fin. The second portion is coupled to a base contact. A dopant concentration of the first portion is less than a dopant concentration of the second portion. An emitter/collector (E/C) material is adjacent the first portion along the width of the semiconductor fin. The E/C material has a second doping type opposite the first doping type. The E/C material is coupled to an E/C contact.
    Type: Grant
    Filed: January 19, 2022
    Date of Patent: December 12, 2023
    Assignee: GLOBALFOUNDRIES U.S. Inc.
    Inventors: Hong Yu, Alexander M. Derrickson, Judson R. Holt
  • Publication number: 20230395715
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a multi-channel replacement metal gate device and methods of manufacture. The structure includes: a fully depleted semiconductor on insulator substrate; a plurality of fin structures over the fully depleted semiconductor on insulator substrate; and a metal gate structure spanning over the plurality of fin structures and the fully depleted semiconductor on insulator substrate.
    Type: Application
    Filed: June 2, 2022
    Publication date: December 7, 2023
    Inventors: Haiting WANG, Hong YU, Zhenyu HU
  • Publication number: 20230394811
    Abstract: A training method includes following steps. A converted image group is generated by a first generator included in the first stage generative adversarial network (GAN) according to a first input image group. A reconstructed image group is generated by a second generator included in the first stage GAN according to the converted image group. The first stage GAN is updated according the reconstructed image group and the first input image group. A sampling block is added into a first stage trained GAN to form a second stage GAN. Progressively training and growing the second stage GAN network at multiple stages according to a second input image group to a last input image group to generate a last stage trained GAN.
    Type: Application
    Filed: June 1, 2023
    Publication date: December 7, 2023
    Inventors: Yung-Hui LI, Hong-Yu LI