Abstract: A semiconductor device includes an integrated circuit (IC) and an interlayer dielectric layer on the substrate, a contact through the interlayer dielectric layer and electrically connected to the IC, a wiring layer on the interlayer dielectric layer with a wiring line electrically connected to the contact, a first passivation layer on the wiring layer, first and second pads on the first passivation layer, and a through electrode through the substrate, the interlayer dielectric layer, the wiring layer, and the first passivation layer to connect to the first pad. The first pad includes a first head part on the first passivation layer, and a protruding part that extends into the first passivation layer from the first head part, the protruding part surrounding a lateral surface of the through electrode in the first passivation layer, and the second pad is connected to the IC through the wiring line and the contact.

Abstract: A semiconductor device includes a substrate, a first electrode including a first hole, a first dielectric layer on an upper surface of the first electrode and on an inner surface of the first hole, a second electrode on the first dielectric layer, a second dielectric layer on the second electrode, a third electrode on the second dielectric layer and including a second hole, and a first contact plug extending through the second electrode and the second dielectric layer and extending through the first hole and the second hole. A sidewall of the first contact plug is isolated from direct contact with the sidewall of the first hole and a sidewall of the second hole, and has a step portion located adjacent to an upper surface of the second electrode.

Abstract: A semiconductor device includes a substrate including a first surface and a second surface opposite to the first surface; an active pattern extending in a first direction on the first surface of the substrate; a first source/drain contact including a first portion connected to a source/drain region of the active pattern, and a second portion extending from the first portion in the first direction or in a second direction intersecting the first direction; a power rail providing a voltage on the second surface of the substrate; a through electrode connected to the power rail and penetrating the substrate; and a landing pad connecting the through electrode and the second portion of the source/drain contact.

Abstract: A semiconductor package includes a circuit board, an interposer structure on the circuit board, a first semiconductor chip and a second semiconductor chip on the interposer structure, the first and the second semiconductor chips electrically connected to the interposer structure and spaced apart from each other, and a mold layer between the first and second semiconductor chips, the mold layer separating the first and second semiconductor chips. A slope of a side wall of the mold layer is constant as the side wall extends away from an upper side of the interposer structure, and an angle defined by a bottom side of the mold layer and the side wall of the mold layer is less than or equal to ninety degrees.

Abstract: Strain sensors are attached to a workpiece, and resistance values of the strain sensors are measured with time while cutting the workpiece with a milling cutting machine. A power spectrum in a frequency domain is obtained by Fourier-transforming the resistance values measured with time. A power peak is found in the power spectrum to be outputted as a magnitude of vibration occurring during machining the workpiece. By attaching a strain sensor to a stamper of a plastic working machine, a resistance value of the strain sensor is measured while pressing a workpiece on a die with the stamper. A magnitude of the strain corresponding to the measured resistance value is used to obtain a corresponding plastic working force. By attaching the strain sensor directly to the workpiece, it is possible to monitor the state of the plastic working and/or cutting process of the workpiece with high precision at low cost.

Abstract: Methods and apparatus for automating the fiber laying process during the repair of composite structures made of fiber-reinforced plastic material based on the three-dimensional printing technique. Continuous fiber rovings (e.g., carbon fibers) impregnated with liquid epoxy can be directly printed onto the damaged surface of the composite structure (e.g., an aircraft component made of carbon fiber-reinforced plastic) without human manipulation in an autonomous manner.

Abstract: Disclosed are modularized garment manufacturing method and system for small quantity batch production of garments. Basic components constituting an ordered garment are generated by analyzing shape graphic data of the ordered garment. For each basic component, basic patterns are generated for each dimension of the ordered garment. The basic patterns are compared with reference garment patterns stored in a garment pattern database to determine a pattern category of each basic pattern. Based on the pattern category of the basic patterns and information on garment production lines currently in operation, subdivided work modules are determined for each basic pattern.

Abstract: The present disclosure relates to neural electrode technology for measuring a biosignal of a human or applying a neural signal to the human, and a neural electrode assembly includes a body that is inserted into a uterus in a non-invasive manner, a recording neural electrode formed to measure a uterine contraction-evoked neural signal, the recording neural electrode being coupled to the body, and a stimulating neural electrode formed to stimulate a nerve entering the uterus to suppress the uterine contraction, the stimulating neural electrode being coupled to the body.

Abstract: Disclosed is a coating apparatus for producing an electrode, which has a reduced defect rate in the coating process. The coating apparatus includes a die unit having an inlet through which the electrode slurry is introduced and an inner space for accommodating the introduced electrode slurry; a shim unit mounted in the die unit and configured to form an outlet together with the die unit so that the electrode slurry is discharged therethrough; and a cover member configured to surround an outer surface of the die unit and the shim unit so that the electrode slurry is not leaked at the outer surface, except for the outlet.

Abstract: The present invention relates to 1-alkyl-5-arylidene-2-selenoxoimidazolidine-4-ons and derivatives thereof, a method for producing the same, and a composition for prevention, improvement or treatment of neurodegenerative disease containing the same. Specifically, 1-alkyl-5-arylidene-2-selenoxoimidazolidine-4-ons and derivatives thereof, which are novel compounds of the present invention, can be used as an excellent composition for prevention, improvement or treatment of neurodegenerative disease.

Abstract: Provided is a bead complex for detecting a nucleic acid molecule in a biological sample, and a method of detecting nucleic acid using the same. According to an aspect, the bead complex may effectively isolate, extract, and detect a target nucleic acid molecule in a biological sample, and by analyzing whether a target nucleic acid molecule is present in a biological sample, there is an effect of improving sensitivity of the assay.

Abstract: There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device may include a first interlayer insulating film containing therein a plurality of pores, a first line structure in the first interlayer insulating film, an inserted insulating film extending along and on a upper surface of the first interlayer insulating film and in contact with the first interlayer insulating film, a barrier insulating film in contact with the inserted insulating film and extending along an upper surface of the inserted insulating film and an upper surface of the first line structure, a second interlayer insulating film on the barrier insulating film and a second line structure disposed in the second interlayer insulating film and connected to the first line structure.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposite to the first surface; a transistor provided on the first surface of the semiconductor substrate; a power rail provided on the first surface of the semiconductor substrate and electrically connected to the transistor; first and second lower interconnection lines provided on the second surface of the semiconductor substrate and spaced apart from each other in a first direction perpendicular to the second surface of the semiconductor substrate; a penetration via penetrating the semiconductor substrate and connecting a corresponding one of the first and second lower interconnection lines to the power rail; and a capacitor provided between and electrically connected to the first and second lower interconnection lines.

Abstract: A semiconductor device includes an interposer substrate and at least one die mounted on the interposer substrate. The interposer substrate includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, an interlayer insulating layer on the first surface of the semiconductor substrate, a capacitor in a hole penetrating the interlayer insulating layer, an interconnection layer on the interlayer insulating layer, and a through-via extending from the interconnection layer toward the second surface of the semiconductor substrate in a vertical direction that is perpendicular to the first surface of the semiconductor substrate. The capacitor includes a sequential stack of a first electrode, a first dielectric layer, a second electrode, a second dielectric layer and a third electrode. A bottom of the hole is distal from the second surface of the semiconductor substrate in relation to the first surface of the semiconductor substrate.

Abstract: Provided is a hybrid drive device including a main power source; an auxiliary power source; a main deformation part configured to be deformable in response to receiving a voltage from the main power source; and an auxiliary deformation part configured to connect to the main deformation part and to be deformable in response to receiving a voltage from the auxiliary power source.

Abstract: A semiconductor package includes a second semiconductor chip disposed on a first semiconductor chip. The first semiconductor chip includes a first semiconductor substrate, a through via, and a lower pad disposed on the through via. The lower pad includes a first segment and a second segment connected thereto. The first segment overlaps the through via. The second segment is disposed on an edge region of the first segment. The second segment has an annular shape. The second semiconductor chip includes a second semiconductor substrate, an upper pad disposed on a bottom surface of the second semiconductor substrate, and a connection terminal disposed between the upper and lower pads. The second segment at least partially surrounds a lateral surface of the upper pad. A level of a top surface of the second segment is higher than that of an uppermost portion of the connection terminal.

Abstract: The present disclosure relates to a method of controlling a garment folding machine, which may effectively prevent damage to a drive motor and a loss of power caused by an overload of the drive motor by accurately detecting and determining a situation in which garments are lumped during a process of conveying or folding the garments, may effectively prevent damage to the lumped garments and related components, and may significantly reduce the time for which the operation of the folding machine is stopped by accurately specifying the position at which the garments are lumped and then notifying a user of the position to allow the user to take an immediate action.

Abstract: A method of predicting fetal or neonatal disease based on the stage of maternal periodontitis is presented to predict fetal or neonatal disease, specifically, any one or more of small for gestational age, neonatal general health, neonatal respiratory disease, retinopathy of prematurity, and patent ductus arteriosus requiring treatment, before birth by determining the stage of maternal periodontitis in a noninvasive and clear manner.

Abstract: An interposer structure includes an interposer substrate, an interlayer insulating layer on an upper surface of the interposer substrate, a capacitor structure inside the interlayer insulating layer, a first via which penetrates the interlayer insulating layer in a vertical direction, the first via being connected to the capacitor structure, an insulating layer on the interlayer insulating layer, a second via which penetrates the insulating layer in the vertical direction, the second via being connected to the first via, and a through via which completely penetrates each of the interposer substrate, the interlayer insulating layer, and the insulating layer in the vertical direction, an upper surface of the through via being coplanar with an upper surface of the second via.

Abstract: The present invention relates to a method for producing an active form of a long-acting insulin analogue derivative, in which the amino acid at position 22 of the insulin B-chain is substituted from arginine (Arg) to lysine (Lys), so that the insulin analogue can be converted to an active form without cleavage of the B-chain even when it is reacted with clostripain. In a conventional method of converting pro-insulin to an active form by use of trypsin, an albumin binding domain is cleaved, making it difficult to convert the long-acting insulin analogue derivative to an active form. The production method according to the present invention overcomes this difficulty, and thus it can be effectively used for the production of a long-acting therapeutic agent for treatment of diabetes.