Abstract: Provided is a semiconductor package including a first chip substrate including a first surface and a second surface, a through via passing through the first chip substrate, an upper passivation layer including a trench on the second surface of the first chip substrate, the trench exposing at least a portion of the second surface of the first chip substrate, an upper pad electrically connected with the through via on the trench, a second chip substrate including a third surface and a fourth surface, a lower pad electrically connected to the second chip substrate on the third surface of the second chip substrate, and a connection bump electrically connecting the upper pad with the lower pad and contacting the lower pad, wherein a width of the connection bump increases as the connection bump becomes farther away from the first surface of the first chip substrate.

Abstract: An electronic device is provided. The electronic device includes a first communication circuit, a second communication circuit, a processor configured to be electrically connected with the first communication circuit and the second communication circuit, and a memory configured to be electrically connected with the processor. The memory includes instructions, when executed by the processor, cause the processor to obtain location information of the electronic device, transmit a first message for requesting to change a state of the electronic device to a network, receive a first response message to the transmitted first message from the network, transmit a second message for requesting a parameter for an operation cycle of the second communication circuit to the network, receive a second response message to the second message from the network, and change the operation cycle of the second communication circuit to a value corresponding to a current state of the electronic device.

Abstract: The present invention comprises the steps of contacting a boron nitride nanotube and a stabilizer in a solvent, and removing a portion of the solvent to obtain a liquid crystal composition including a liquid crystal in which at least a portion of the stabilizer is adsorbed on the surface of the boron nitride nanotube.

Abstract: A femtosecond laser source according to an embodiment of the present invention includes: a pulse generator that converts a continuous wave laser into an optical pulse train; a burst generator that separates the optical pulse train into a plurality of burst pulses; a pulse amplification and spectral broadening unit that expands the spectrum by amplifying a plurality of burst pulses; and a pulse compressor that compresses a plurality of amplified burst pulses to generate a femtosecond laser with a pulse width of 1 picosecond (10?12 s) or less.

Abstract: Integrated circuit devices including a via and methods of forming the same are provided. The methods may include forming a conductive wire structure on a substrate. The conductive wire structure may include a first insulating layer and a conductive wire stack in the first insulating layer, and the conductive wire stack may include a conductive wire and a mask layer stacked on the substrate. The method may also include forming a recess in the first insulating layer by removing the mask layer, the recess exposing the conductive wire, forming an etch stop layer and then a second insulating layer on the first insulating layer and in the recess of the first insulating layer, and forming a conductive via extending through the second insulating layer and the etch stop layer and contacting the conductive wire.

Abstract: The present invention relates to a method, system, and non-transitory computer-readable recording medium for supporting learning. According to one aspect of the invention, there is provided a method for supporting learning, the method comprising the steps of: acquiring a learner's score for at least one assessment item included in a scoring table, wherein the learner has solved a question for learning and the scoring table is applied to a descriptive answer of the learner; determining a weak learning element of the learner with reference to the acquired score and at least one learning element associated with the at least one assessment item; and determining a supplementary learning path to be provided to the learner with reference to the determined weak learning element.

Abstract: An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.

Abstract: Proposed is an electric kettle having a water outlet. The electric kettle includes: a body in which water or food is accommodated; a lid for covering the opened upper side of the body; a base which is provided on the underside of the body and supports the body; a water outlet assembly which is provided at one side of the body and guides the contents in the body to be discharged; a handle provided at one side of the body and configured to be gripped by hand; and a heating module which is provided at one side of the body and heats the space inside the body to increase and control the temperature of the contents, wherein the water outlet assembly has a structure which is composed of one or more elements and blocks a gap between the water outlet assembly and the body to prevent leakage of water.

Abstract: A semiconductor may include a first inter metal dielectric (IMD) layer, a first blocking layer on the first IMD layer, a metal wiring and a second blocking layer. The first inter metal dielectric (IMD) layer may be formed on a substrate, the first IMD layer may include a low-k material having a dielectric constant lower than a dielectric constant of silicon oxide. The first blocking layer may be formed on the first IMD layer. The first blocking layer may include an oxide having a dielectric constant higher than the dielectric constant of the first IMD layer. The metal wiring may be through the first IMD layer and the first blocking layer. The second blocking layer may be formed on the metal wiring and the first blocking layer. The second blocking layer may include a nitride. The first and second blocking layers may reduce or prevent from the out gassing, so that a semiconductor device may have good characteristics.

Abstract: A semiconductor package is provided. The semiconductor package includes: a first stack including a first semiconductor substrate; a through via that penetrates the first semiconductor substrate in a first direction; a second stack that includes a second face facing a first face of the first stack, on the first stack; a first pad that is in contact with the through via, on the first face of the first stack; a second pad including a concave inner side face that defines an insertion recess, the second pad located on the second face of the second stack; and a bump that connects the first pad and the second pad, wherein the bump includes a first upper bump on the first pad, and a first lower bump between the first upper bump and the first pad.

Abstract: The present invention relates to long-acting insulin analogues having an increased in vivo half-life in which the amino acid at position 22 of the B-chain of native insulin is substituted and one or more amino acids of the A-chain or B-chain of native insulin are additionally substituted, and to long-acting insulin analogue derivatives having a further increased in vivo half-life in which an albumin-binding domain is additionally fused to the long-acting insulin analogues. The insulin analogues or insulin analogue derivatives according to the present invention have a significantly increased in vivo half-life, and thus can provide convenience to diabetic patients who self-administer insulin by injection.

Abstract: The present invention relates to a method for producing an animal model of preterm birth and an animal model of preterm birth produced by the method. The animal model of the present invention can be effectively applied to investigate the causes and symptoms of preterm birth induced by cervical injury. The mortality rate of the animal model according to the present invention is low until preterm birth despite its induced preterm birth. In addition, the animal model of the present invention is produced in a higher yield than any other existing model. Furthermore, the preterm birth of the animal model according to the present invention is induced at a desired time point. Due to these advantages, the animal model of the present invention can be effectively applied to investigate the causes and mechanisms of preterm birth. The mortality rate of premature neonates born from the animal model of the present invention is considerably low and the premature neonates are immature.

Abstract: An electronic device is provided. The electronic device includes a first communication circuit, a second communication circuit, a processor configured to be electrically connected with the first communication circuit and the second communication circuit, and a memory configured to be electrically connected with the processor. The memory includes instructions, when executed by the processor, cause the processor to obtain location information of the electronic device, transmit a first message for requesting to change a state of the electronic device to a network, receive a first response message to the transmitted first message from the network, transmit a second message for requesting a parameter for an operation cycle of the second communication circuit to the network, receive a second response message to the second message from the network, and change the operation cycle of the second communication circuit to a value corresponding to a current state of the electronic device.

Abstract: Provided is an interposer structure. The interposer structure comprises an interposer substrate, an interlayer insulating film which covers a top surface of the interposer substrate, a capacitor structure in the interlayer insulating film and a wiring structure including a first wiring pattern and a second wiring pattern spaced apart from the first wiring pattern, on the interlayer insulating film, wherein the capacitor structure includes an upper electrode connected to the first wiring pattern, a lower electrode connected to the second wiring pattern, and a capacitor dielectric film between the upper electrode and the lower electrode.

Abstract: Provided is a stack molding machine including an upper mold having formed therein a first runner and a first gate serving as a path of a resin material, a first intermediate plate provided under and combined with the upper mold, and having formed therein a first molding connected to the first gate to mold at least a portion on a first substrate placed under the first intermediate plate, a dummy plate provided under and spaced a certain distance apart from the first intermediate plate, a second intermediate plate provided under the dummy plate, and having formed therein a second molding connected to a second gate to mold at least a portion under a second substrate placed under the dummy plate, and a lower mold having formed therein a second runner and the second gate serving as a path of the resin material, and combined with the second intermediate plate.

Abstract: The present invention relates to a novel nicotinamide compound, a method for preparing the same, and a herbicide comprising the compound. The compound of the present invention is useful as a herbicide for foliar treatment or soil treatment because it has high safety for wheat or corn and has excellent herbicidal activity against grassy weeds, sedge weeds or broadleaf weeds.

Abstract: A non-naturally occurring chimeric polypeptide having an activity provided by a TGF-beta family member is disclosed. The chimeric polypeptide of an embodiment comprises two or more domains or fragments from parental TGF-beta proteins operably linked such that the resulting polypeptide is capable of modulating a pathway associated with a TGF-beta family member. In one embodiment, the pathway is a SMAD or DAXX pathway.

Abstract: In a vehicle including a shift-by-wire (SBW) transmission which may be parked in the neutral gear position of the transmission, method for controlling parking thereof includes determining whether the vehicle is in a situation in which neutral parking is required according to sensor information, when the vehicle is stopped, outputting first information configured to get a confirmation on whether a driver intends to perform the neutral parking from the driver, when the controller concludes that the vehicle is in the situation in which the neutral parking is required and when a park (P) gear position is input or an ignition of the vehicle is turned off, and controlling the SBW transmission to shift to a neutral (N) gear position, when there is an agreement input as a response to the first information.

Abstract: A semiconductor device includes an integrated circuit (IC) and an interlayer dielectric layer on the substrate, a contact through the interlayer dielectric layer and electrically connected to the IC, a wiring layer on the interlayer dielectric layer with a wiring line electrically connected to the contact, a first passivation layer on the wiring layer, first and second pads on the first passivation layer, and a through electrode through the substrate, the interlayer dielectric layer, the wiring layer, and the first passivation layer to connect to the first pad. The first pad includes a first head part on the first passivation layer, and a protruding part that extends into the first passivation layer from the first head part, the protruding part surrounding a lateral surface of the through electrode in the first passivation layer, and the second pad is connected to the IC through the wiring line and the contact.

Abstract: A semiconductor device includes a substrate having a first region, a second region, a first buffer region, and a second buffer region. A plurality of conductive lines is disposed on the first region of the substrate. An inductor is disposed on the second region of the substrate, and a dummy pattern is disposed on the first buffer region of the substrate. The first buffer region is provided between the first region and the second region. The second buffer region is provided between the first buffer region and the second region.