Abstract: A display control system includes a plurality of driver circuits connected in series. A driver circuit among the plurality of driver circuits includes a receiver, a duty cycle correction circuit and a transmitter. The receiver is configured to receive a first signal from a previous driver circuit among the plurality of driver circuits. The duty cycle correction circuit, coupled to the receiver, is configured to adjust a duty cycle of the first signal to generate a second signal. The transmitter, coupled to the duty cycle correction circuit, is configured to transmit the second signal to a next driver circuit among the plurality of driver circuits.

Abstract: A light-emitting device includes a first carrier, which includes a side surface between a first surface and a second surface, upper conductive pads on the first surface, and lower conductive pads under the second surface; a RDL pixel package includes a RDL which includes bonding pads and bottom electrodes, and the light-emitting units on the RDL, and connected to the bonding pads. A light-transmitting layer on the RDL and covers the light-emitting units, an upper surface, a lower surface, and a lateral surface between the upper surface and the lower surface. The RDL pixel package is on the first surface and electrically connected to the upper conductive pads. A protective layer covers the first surface and contacting the side surface of the RDL pixel package. The lower electrodes and the upper conductive pads are connected, and the distance between two adjacent bonding pads is less than 30 ?m.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) chip comprising a front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV), as well as a method for forming the IC chip. In some embodiments, a semiconductor layer overlies a substrate. The semiconductor layer may, for example, be or comprise a group III-V semiconductor and/or some other suitable semiconductor(s). A semiconductor device is on the semiconductor layer, and a FEOL layer overlies the semiconductor device. The FEOL TSV extends through the FEOL layer and the semiconductor layer to the substrate at a periphery of the IC chip. An intermetal dielectric (IMD) layer overlies the FEOL TSV and the FEOL layer, and an alternating stack of wires and vias is in the IMD layer.

Abstract: The application discloses a light-emitting device including a carrier which includes an insulating layer, an upper conductive layer formed on the insulating layer, a plurality of conducting vias passing through the insulating layer, and a lower conductive layer formed under the insulating layer; four light-emitting elements arranged in rows and columns flipped on the carrier; and a light-passing unit formed on the carrier and covering the four light-emitting elements; wherein each of the light-emitting elements including a first light-emitting bare die emitting a first dominant wavelength, a second light-emitting bare die emitting a second dominant wavelength, and a third light-emitting bare die emitting a third dominant wavelength; and wherein two adjacent first light-emitting bare die in a row has a first distance W1, two adjacent first light-emitting bare die in a column has a second distance W2, and W1 is the same as W2.

Abstract: In some embodiments, the present disclosure relates to a semiconductor structure. The semiconductor structure includes a stacked semiconductor substrate having a semiconductor material disposed over a base semiconductor substrate. The base semiconductor substrate has a first coefficient of thermal expansion and the semiconductor material has a second coefficient of thermal expansion that is different than the first coefficient of thermal expansion. The stacked semiconductor substrate includes one or more sidewalls defining a crack stop ring trench that continuously extends in a closed path between a central region of the stacked semiconductor substrate and a peripheral region of the stacked semiconductor substrate surrounding the central region. The peripheral region of the stacked semiconductor substrate includes a plurality of cracks and the central region is substantially devoid of cracks.

Abstract: Various embodiments of the present disclosure are directed toward an integrated chip including an undoped layer overlying a substrate. A first barrier layer overlies the undoped layer. A doped layer overlies the first barrier layer. Further, a second barrier layer overlies the first barrier layer, where the second barrier layer is laterally offset from a perimeter of the doped layer by a non-zero distance. The first and second barrier layers comprise a same III-V semiconductor material. A first atomic percentage of a first element within the first barrier layer is less than a second atomic percentage of the first element within the second barrier layer.

Abstract: A wireless communication system includes a receiving apparatus and a transmitting apparatus. The transmitting apparatus includes a transmitting processing unit, configured to determine a wireless transmission channel on a first frequency band when in a first mode; a transmitting antenna unit, configured to transmit information of the wireless transmission channel and a channel state information of the wireless transmission channel on a second frequency band when in the first mode of the transmitting apparatus; and a wireless sensing unit, configured to perform a wireless sensing on the wireless transmission channel when in a second mode of the transmitting apparatus.

Abstract: A surface-enhanced Raman scattering (SERS) detection method is provided for detecting a target analyte in a sample. The SERS detection method generally includes the steps of: (a). preparing an extract of the sample; (b). introducing the sample extract onto a SERS substrate, causing the target analyte to be absorbed in the SERS substrate; (c). introducing a volatile organic solvent onto the SERS substrate to have the target analyte of the sample extract dissolved and comes out of the SERS substrate; (d). irradiating the SERS substrate with light to evaporate the volatile organic solvent, leaving a more condensed target analyte on the SERS substrate; (e). irradiating the condensed target analyte with laser light to have the target analyte penetrate deeply into the SERS substrate; and (f). performing Raman measurement with a laser beam focusing on the SERS substrate to analyze the target analyte.

Abstract: A clock generator includes a pulse generator and a duty cycle correction circuit. The pulse generator is configured to receive an input clock signal and generate a pulse signal according to the input clock signal. The duty cycle correction circuit, coupled to the pulse generator, is configured to adjust a duty cycle of the pulse signal to generate an output clock signal.

Abstract: An overload protection switch with reverse restart switching structure, particularly to one that has a molded-case circuit breaker which adding a lampshade parallel stagnation position for overload indication, and when resetting, needs to press back to the RESET for reconfirmation; due to the stagnation position and reverse restart structure, it can avoid repeating the reset action, preventing the reduction of the life of the overload protection switch and repeated exposure or the misjudgment and then resetting of electrical products that have been overloaded and tripped and then overload again then results in causing dangerous; also, the lampshade can be completely tripped even when the lampshade is suppressed, and prevent the danger of repeated tripping during overload.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) chip comprising a front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV), as well as a method for forming the IC chip. In some embodiments, a semiconductor layer overlies a substrate. The semiconductor layer may, for example, be or comprise a group III-V semiconductor and/or some other suitable semiconductor(s). A semiconductor device is on the semiconductor layer, and a FEOL layer overlies the semiconductor device. The FEOL TSV extends through the FEOL layer and the semiconductor layer to the substrate at a periphery of the IC chip. An intermetal dielectric (IMD) layer overlies the FEOL TSV and the FEOL layer, and an alternating stack of wires and vias is in the IMD layer.

Abstract: An integrated circuit includes a first metal-insulator-semiconductor capacitor, a second metal-insulator-semiconductor capacitor, and a metal-insulator-metal capacitor. A first terminal of the first metal-insulator-semiconductor capacitor is configured to receive a first reference voltage for a higher voltage domain, while a first terminal of the second metal-insulator-semiconductor capacitor is configured to receive a second reference voltage for the higher voltage domain. A second terminal of the first metal-insulator-semiconductor capacitor is conductively connected to a first terminal of the metal-insulator-metal capacitor, while a second terminal of the second metal-insulator-semiconductor capacitor is conductively connected to a second terminal of the metal-insulator-metal capacitor.

Abstract: In some embodiments, the present disclosure relates to a method of forming a transistor device. The method includes forming a source contact over a substrate, forming a drain contact over the substrate, and forming a gate contact material over the substrate. The gate contact material is patterned to define a gate structure that wraps around the source contact along a continuous and unbroken path.

Abstract: A range finder includes a prism module and a prism adjusting mechanism. The prism module includes a fixing prism group and a movable prism group, wherein the fixing prism group is adjacent to the movable prism group. The prism adjusting mechanism includes a first adjusting group and a second adjusting group, wherein the first adjusting group includes a first adjusting member and a second adjusting member, and the second adjusting group includes a third adjusting member. The first adjusting member or the second adjusting member is rotated to axially move so that the movable prism group is rotated with respect to the fixing prism group about a first axis, the third adjusting member is rotated to axially move so that the movable prism group is rotated with respect to the fixing prism group about a second axis, and the first axis is perpendicular to the second axis.

Abstract: A clock generator includes a pulse generator and a duty cycle correction circuit. The pulse generator is configured to receive an input clock signal and generate a pulse signal according to the input clock signal. The duty cycle correction circuit, coupled to the pulse generator, is configured to adjust a duty cycle of the pulse signal to generate an output clock signal.

Abstract: A display control system includes a plurality of driver circuits connected in series. A driver circuit among the plurality of driver circuits includes a receiver, a duty cycle correction circuit and a transmitter. The receiver is configured to receive a first signal from a previous driver circuit among the plurality of driver circuits. The duty cycle correction circuit, coupled to the receiver, is configured to adjust a duty cycle of the first signal to generate a second signal. The transmitter, coupled to the duty cycle correction circuit, is configured to transmit the second signal to a next driver circuit among the plurality of driver circuits.

Abstract: A control system includes a plurality of driving circuits coupled in series, which includes a first driving circuit and a second driving circuit. The first driving circuit includes a first receiver, a first transmitter and a replica receiver. The first transmitter is coupled to the first receiver, and the replica receiver is coupled to an output terminal of the first transmitter. The second driving circuit, coupled to the first driving circuit, includes a second receiver and a second transmitter. The second receiver is coupled to the first transmitter, and the second transmitter is coupled to the second receiver.

Abstract: An apparatus for perform metal etching and plasma ashing includes: a processing chamber having an enclosed area; an electrostatic chuck disposed in the enclosed area and configured to secure a wafer, the electrostatic chuck connected with a bias power; at least one coil connected with a source power; a etchant conduit configured provide an etchant to a metal of the wafer within the processing chamber in accordance with a photoresist mask of the wafer; and a gas intake conduit connected with a gas source, wherein the gas intake conduit is configured to supply the processing chamber with a gas from the gas source during performance of plasma ashing within the processing chamber.

Abstract: A non-diffusion type photodiode is described and has: a substrate, a buffer layer, a light absorption layer, an intermediate layer, and a multiplication/window layer. The buffer layer is disposed on the substrate. The light absorption layer is disposed on the buffer layer. The intermediate layer is disposed on the light absorption layer and has a first boundary, wherein the intermediate layer is an I-type semiconductor layer or a graded refractive index layer. The multiplication/window layer is disposed on the intermediate layer and has a second boundary, wherein in a top view, the first boundary surrounds the second boundary, and a distance between the first boundary and the second boundary is greater than or equal to 1 micrometer. The non-diffusion type photodiode can reduce generation of dark current.

Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.