Abstract: A method includes: receiving an auxiliary routing request from a manufacturing execution system (MES) apparatus of a first site by an inter-site backup management apparatus; selecting an auxiliary route to a second site based on the auxiliary routing request and a statistical model by the inter-site backup management apparatus; including the auxiliary route in a route associated with a wafer lot by the MES apparatus; and performing a semiconductor processing operation on a wafer of the wafer lot according to the route.

Abstract: An image sensor includes a first color filter disposed on a first photodiode, a first grid, and a first micro lens disposed on the first color filter and the first grid. The first grid includes a first main portion and a first shielding portion extended from the first main portion. The first main portion surrounds the first color filter and the first shielding portion partially covers the first color filter such that a first cavity defined by the first shielding portion is configured over the first color filter. The first color filter or the first micro lens includes a first protruding portion filled in the first cavity, and a width of the first protruding portion is in a range from 0.1 pixel size to 0.8 pixel size. A manufacturing method of an image sensor is also disclosed.

Abstract: A semiconductor processing system includes a first semiconductor processing site and a second semiconductor processing site. The system includes an unmanned electric vehicle configured to carry a portable cleanroom stocker between the first and second semiconductor processing sites. The portable cleanroom stocker is configured to maintain cleanroom conditions within the portable cleanroom stocker during transportation.

Abstract: The application provides a content addressable memory (CAM) device and a method for searching and comparing data thereof. The CAM device comprises: a plurality of memory strings; and a sensing amplifier circuit coupled to the memory strings; wherein in data searching, a search data is compared with a storage data stored in the memory strings, the memory strings generate a plurality of string currents, the sensing amplifier circuit senses the string currents to generate a plurality of sensing results; based on the sensing results, a match degree between the search data and the storage data is determined as one of the follows: all-matched, partially-matched and all-mismatched.

Abstract: The present disclosure provides embodiments of a semiconductor device. In one embodiment, the semiconductor device includes a gate structure, a source/drain feature adjacent the gate structure, a first dielectric layer over the source/drain feature, an etch stop layer over the gate structure and the first dielectric layer, a second dielectric layer over the etch stop layer, a source/drain contact that includes a first portion extending through the first dielectric layer and a second portion extending through the etch stop layer and the second dielectric layer, a metal silicide layer disposed between the second portion and etch stop layer, and a metal nitride layer disposed between the first portion and the first dielectric layer.

Abstract: The present invention relates to an anti-cracking assembly structure for door and window corner wall and anti-cracking component thereof. The anti-cracking components of the anti-cracking assembly structure for door and window corner wall has a plurality of protruding ribs and grooves formed at intervals on a surface thereof. The protruding ribs and grooves are arc-shaped and arranged in parallel to each other. When the reinforced concrete wall is subjected to an external force and stress is generated at the corner of the door and window frames, the stress can be guided along the arc-shaped protruding ribs and arc-shaped grooves on the surface of anti-cracking component to change the transmission direction of the force at the stress end, so as to transmit and disperse the stress to the peripheral side more quickly. Accordingly, it can more effectively prevent the occurrence of 45-degree shear cracks at the corners.

Abstract: Various aspects of the present disclosure are directed toward apparatuses, systems, and methods that include an anchoring implantable medical device configured to anchor an implantable medical device.

Abstract: Various aspects of the present disclosure are directed toward apparatuses. systems. and methods that include a catheter-delivered implantable hemodynamic monitor (IHM) implant system with an implantable sensor.

Abstract: A method for dynamically allocating transmitting (TX) powers to multiple TX modules of a radio module includes: for each of the multiple TX modules: mapping a radio frequency (RF) exposure limit to a TX power limit; obtaining a first TX power limit corresponding a first time interval and a second TX power limit corresponding a second time interval, wherein the first time interval is earlier than the second time interval; in response to a TX power corresponding to the first time interval being smaller than the first TX power limit, calculating and storing a value of an unused TX power corresponding the first time interval in at least one power pool within a memory; and in response to a TX power corresponding to the second time interval being larger than the second TX power limit, obtaining the value of the unused TX power from the at least one power pool.

Abstract: The application discloses an integrated memory device, a manufacturing method and an operation method thereof. The integrated memory cell includes: a first memory cell; and an embedded second memory cell, serially coupled to the first memory cell, wherein the embedded second memory cell is formed on any one of a first side and a second side of the first memory cell.

Abstract: Methods of manufacturing electronic devices are described. Embodiments of the present disclosure advantageously provide methods of manufacturing electronic devices that meet reduced thickness, reduced leakage, lower thermal budget, and Vt requirements (including multi-Vt), and have improved device performance and reliability. The method comprises forming a P-dipole stack and an N-dipole stack on a semiconductor substrate by: depositing an interfacial layer (e.g., silicon oxide (SiOx)) on the top surface of the channel; depositing a hafnium-containing layer comprising hafnium oxide (HfOx) and having a thickness of less than or equal to 5 ? on the interfacial layer; and depositing a dipole layer comprising lanthanum nitride (LaN) on the hafnium-containing layer.

Abstract: A memory device and associated operation method are provided. The operation method is applied to the memory device to determine whether a search input and in-memory data are matched. The memory device includes a memory array and a control circuit, and the memory array includes M*N memory cells. The operation method includes the following steps. A select voltage is applied to an n-th word line. A pass-through voltage is applied to (N?1) word lines. A first search voltage is applied to an m-th first bit-line, and a second search voltage is applied to an m-th second bit-line. An m-th first sensing current and an m-th second sensing current bit are selectively generated. Then, a sensing circuit in the control circuit generates a sensing circuit output. The sensing circuit output represents whether the m-th first sensing current and the m-th second sensing current are generated.

Abstract: A method includes forming a dielectric layer over a conductive feature, and etching the dielectric layer to form an opening. The conductive feature is exposed through the opening. The method further includes forming a tungsten liner in the opening, wherein the tungsten liner contacts sidewalls of the dielectric layer, depositing a tungsten layer to fill the opening, and planarizing the tungsten layer. Portions of the tungsten layer and the tungsten liner in the opening form a contact plug.

Abstract: The present disclosure provides embodiments of a semiconductor device. In one embodiment, the semiconductor device includes a gate structure, a source/drain feature adjacent the gate structure, a first dielectric layer over the source/drain feature, an etch stop layer over the gate structure and the first dielectric layer, a second dielectric layer over the etch stop layer, a source/drain contact that includes a first portion extending through the first dielectric layer and a second portion extending through the etch stop layer and the second dielectric layer, a metal silicide layer disposed between the second portion and etch stop layer, and a metal nitride layer disposed between the first portion and the first dielectric layer.

Abstract: A touch apparatus includes a first conductive layer, a second conductive layer, and a third conductive layer. The first conductive layer includes a power supply electrode and a plurality of first conductive patterns. The second conductive layer includes a common electrode and a plurality of second conductive patterns. The first conductive patterns and the second conductive patterns are electrically connected to form a plurality of first conductive elements. At least one portion of the first conductive elements is first touch electrodes. The third conductive layer includes a plurality of bonding pads and a plurality of second touch electrodes. In a top view of the touch apparatus, the first touch electrodes and the second touch electrodes are staggered.

Abstract: A memory device and a method for manufacturing the memory device are provided. The memory device includes a stack and a plurality of memory strings. The stack is disposed on the substrate, and the stack includes a plurality of conductive layers and a plurality of insulating layers alternately stacked. The memory strings pass through the stack along a first direction, wherein a first memory string in the memory strings includes a first conductive pillar and a second conductive pillar, a channel layer, and a memory structure. The first conductive pillar and the second conductive pillar respectively extend along the first direction and are separated from each other. The channel layer is disposed between the first conductive pillar and the second conductive pillar. The memory structure surrounds the second conductive pillar, and the memory structure includes a resistive memory material.

Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. Embodiments of the disclosure advantageously provide electronic devices which meet reduced thickness, lower thermal budget, and Vt requirements, and have improved device performance and reliability. The electronic devices described herein comprise a source region, a drain region, and a channel separating the source region and the drain region, an interfacial layer on a top surface of the channel, a high-? dielectric layer on the interfacial layer, a dipole layer on the high-? dielectric layer, and a capping layer on the dipole layer. In some embodiments, the dipole layer comprises a metal oxynitride (MON), such as aluminum oxynitride (AlON). In some embodiments, the methods comprise annealing the substrate to drive atoms from the dipole layer into one or more of the interfacial layer or the high-? dielectric layer.

Abstract: An anti-wear screw includes a U-shaped anti-wear clip and a locking screw. The U-shaped anti-wear clip is used to clamp on a heat dissipation substrate, and the locking screw is passed through the U-shaped anti-wear clip to fix the heat dissipation substrate. In addition, the anti-wear screw further includes a pressure spring installed between the locking screw and the U-shaped anti-wear clip to exert pressure on the U-shaped anti-wear clip and the heat dissipation substrate.

Abstract: The present invention provides a data analytic scheme for screening biomarkers for differential diagnosis of the status of Parkinson's disease, Parkinson's disease with mild cognitive impairment, Parkinson's disease dementia, Alzheimer's disease, and/or multiple system atrophy, the methodology implementing the same and the results of the screening thereof. Biomedical Oriented Logistic Dantzig Selector (BOLD Selector) was developed to identify candidate microRNAs and extracellular vesicle proteins effective at discerning between any two of the above mentioned disease categories from profiling results. The prediction models are finalized by establishing logistic regression formula for each pair of patient group differentiation.

Abstract: A drone monitoring and control system includes: a drone, a mobile vehicle configured to carry the drone, a computing device and a display device. The drone is disposed with an operation payload and a camera. The drone performs an output operation of the operation payload. The computing device outputs a first environment image according to a first image captured by the camera, generates a flight trajectory of the drone and a movement trajectory of the mobile vehicle according to an operation data set including a target location of a target object and 3D terrain data, controls the drone to move to a set location according to the flight trajectory, and controls the drone to stay at the set location when a distance between the target and set locations is less than a preset distance. The display device displays the first environment image and the 3D terrain data.