Abstract: A method includes forming a dummy gate structure across a fin, in which the dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode, forming gate spacers on sidewalls of the dummy gate structure, forming source/drain epitaxial structures on sides of the dummy gate structure, performing a first etch process to the dummy gate electrode such that a recessed dummy gate electrode remains over the fin, performing a second etch process to the gate spacers such that recessed gate spacers remain over the sidewalls of the dummy gate structure, removing the recessed dummy gate electrode and the dummy gate dielectric layer after the second etch process to form a recess between the recessed gate spacers, forming a gate structure overfilling the recess, and performing a third etch process to the gate structure such that a recessed gate structure remains between the recessed gate spacers.

Abstract: A backsheet of a solar cell module including a substrate, a first protection layer, and a second protection layer is provided. The substrate includes a first surface and a second surface opposite to each other. The first protection layer is disposed on the first surface of the substrate. The second protection layer is disposed on the second surface of the substrate, wherein the first protection layer and the second protection layer include a silicone layer. At least one of the first protection layer and the second protection layer includes diffusion particles, wherein the diffusion particles include zinc oxide, titanium dioxide modified with silicon dioxide, or a combination thereof. A thickness of the first protection layer and a thickness of the second protection layer are respectively 10 ?m to 30 ?m. A solar cell module including the backsheet is also provided.

Abstract: Text-to-image generation generally refers to the process of generating an image from one or more text prompts input by a user. While artificial intelligence has been a valuable tool for text-to-image generation, current artificial intelligence-based solutions are more limited as it relates to text-to-3D content creation. For example, these solutions are oftentimes category-dependent, or synthesize 3D content at a low resolution. The present disclosure provides a process and architecture for high-resolution text-to-3D content creation.

Abstract: A sterilization apparatus for a portable electronic device including a cabinet and a carrier is provided. The carrier includes a base slidably disposed on the cabinet, multiple first positioning elements and multiple second positioning elements disposed in parallel on the base, multiple sterilization light sources corresponding to the second positioning elements and multiple pressure sensors disposed in parallel in the base. The base is configured to carry at least one portable electronic device. One second positioning element is disposed between any two adjacent first positioning elements, and any first positioning element and any second positioning element adjacent to each other are separated by a positioning space. The pressure sensors are respectively located in the positioning spaces. One sterilization light source is disposed between any two adjacent pressure sensors, and the pressure sensors are configured to sense a pressure from the portable electronic device.

Abstract: A storage device for generating an identity code and an identity code generating method are disclosed. The storage device includes a first storage circuit, a second storage circuit and a reading circuit. The first storage circuit stores a plurality of first data and the first data have a plurality of bits. The second storage circuit stores a plurality of second data and the second data have a plurality of bits. The reading circuit reads the second data from the second storage circuit to form a first sequence, selects a first portion of the first data according to the first sequence, reads the first portion of the first data from the first storage circuit to form a target sequence and outputs the target sequence to serve as an identity code.

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A method for adjusting time-averaged (TA) parameters of a transmitting (TX) power of a radio module includes: obtaining at least one message of the at least one other radio module or at least one message of the radio module; determining a scenario of the TX power of the radio module according to the at least one message of the at least one other radio module or the at least one message of the radio module; determining whether the scenario is different from a predetermined scenario of the TX power of the radio module; and in response to the scenario being different from the predetermined scenario, adjusting the TA parameters according to the scenario.

Abstract: An apparatus is provided. The apparatus includes a laser generation device configured to emit a laser signal to a semiconductor fabrication component. The apparatus includes a reflection detection device configured to receive a reflection signal comprising light, of the laser signal, reflected by a surface of the semiconductor fabrication component. The reflection detection device includes an optical filter. The optical filter is configured to block light, of the reflection signal, that has a wavelength outside a defined range of wavelengths. The optical filter is configured to provide filtered light, from the reflection signal, that has a wavelength within the defined range of wavelengths. The reflection detection device includes a light sensor configured to generate an electrical signal based upon the filtered light. The apparatus includes a computer configured to determine, based upon the electrical signal, measures of electrostatic field strength at the surface of the semiconductor fabrication component.

Abstract: A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.

Abstract: A three-axis voice coil motor including a base, a spherical bearing, a magnetic component, an X-coil group, a Y-coil group, and at least one Z-coil group is provided. The base has a supporting pole. The spherical bearing is rotatably sleeved around the supporting pole. The magnetic component is securely sleeved around the spherical bearing and the magnetic component rotates along with the spherical bearing. The X-coil group is disposed around the magnetic component along an X-axial direction passing through the spherical bearing, and the X-coil group has first gaps. The Y-coil group is disposed around the magnetic component along a Y-axial direction passing through the spherical bearing, and the Y-coil group has second gaps. The Z-coil group is disposed around the magnetic component along a Z-axial direction passing through the spherical bearing.

Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer over a substrate, forming a metal layer in the first dielectric layer, forming an etch stop layer on a surface of the first dielectric layer and the metal layer, removing portions of the metal layer and the etch stop layer to form a recess in the metal layer, and forming a tungsten plug in the recess. The recess is spaced apart from a bottom surface of the etch stop layer.

Abstract: An electronic device with light emitting function includes a casing, a circuit board, a light-shielding member, a first light-guiding member, and a second light-guiding member. The casing has a light-guiding cover plate having a first partial block and a second partial block. The circuit board has a light-emitting element adjacent to the first partial block. The light-shielding member is blocked between the light-emitting element and the first partial block. The first light-guiding member has a first reflective inclination surface at a light-emitting direction of the light-emitting element and configured to reflect a light emitted by the light-emitting element to be a first reflected light which is transmitted toward a direction away from the first partial block. The second light-guiding member has a second reflective inclination surface configured to reflect the first reflected light to be a second reflected light which is irradiated to the second partial block.

Abstract: An optical navigation device control method comprising: (a) computing brightness contrast information of original images captured by an image sensor of an optical navigation device; (b) computing brightness variation levels of the original images; (c) improving image qualities of the original images based on the brightness contrast information and the brightness variation levels, to generate adjusted images; and (d) computing movements of the optical navigation device based on displacement between the adjusted images. The optical navigation device is located on a surface. The step (d) comprises: collecting reference images of different parts of the surface for a plurality of combinations of moving directions of the optical navigation device and placement directions of the surface; and determining a type of the surface via comparing images of a current surface with the reference images.

Abstract: A lifting and lowering control system, which drives a carrier device of a stacker to perform lifting and lowering operations, includes a driving module, a position sensor, and a processor. The driving module is connected with the carrier device for driving the carrier device to move from the initial position to the lifting position, which is defined as a first travel, and to move from the lifting position to the placing position, which is defined as a second travel. The position sensor detects a first or a second displacement amount respectively generated by the first or the second travel. The processor receives and stores the first and the second displacement amounts. The processer is allowed to read the stored first or second displacement amount and accordingly control the driving module to trigger the carrier device to carry out the first or the second travel at non-constant speeds.

Abstract: An apparatus includes a six-axis correction stage, an auto-collimation measurement device, a light splitter, a telecentric image measurement device, and a controller. The six-axis correction stage carries a device under test; the auto-collimation measurement device is arranged above the six-axis correction stage along a measurement optical axis; the light splitter is arranged on the measurement optical axis and is interposed between the six-axis correction stage and the auto-collimation measurement device. A method controls the six-axis correction stage to correct rotation errors in at least two degrees of freedom of the device under test according to a measurement result of the auto-collimation measurement device, and controls the six-axis correction stage to correct translation and yaw errors in at least three degrees of freedom of the device under test according to a measurement result of the telecentric image measurement device by means of the controller.

Abstract: A semiconductor structure includes a substrate, a conductive region, a first insulation layer, a second insulation layer, a gate structure, a low-k spacer, a gate contact, and a conductive region contact. The low-k spacer is formed between a sidewall of the gate structure and the first insulation layer. The gate contact is landed on a top surface of the gate structure. A proximity distance between a sidewall of the gate contact and the conductive region contact along a top surface of the second insulation layer is in a range of from about 4 nm to about 7 nm. A method for manufacturing a semiconductor structure is also provided.

Abstract: An optoelectronic cable comprises an optical fiber wire disposed at the center of the optoelectronic cable, with an armoring layer that is arranged at a periphery of the optical fiber wire. A plurality of electric wires is disposed around the periphery of the optical fiber wire, and an outer sheath is disposed as an outermost layer of the optoelectronic cable. By arranging the armoring layer at the periphery of the innermost optical fiber wire, optical fibers therein can be protected from being damaged by external forces. The overall assembly can also effectively reduce the total diameter, resulting in a softer and more flexible optoelectronic cable highly convenient for packaging and installation.

Abstract: A memory device and a method for manufacturing the memory device are provided. The memory device includes a stack and a plurality of memory strings. The stack is disposed on the substrate, and the stack includes a plurality of conductive layers and a plurality of insulating layers alternately stacked. The memory strings pass through the stack along a first direction, wherein a first memory string in the memory strings includes a first conductive pillar and a second conductive pillar, a channel layer, and a memory structure. The first conductive pillar and the second conductive pillar respectively extend along the first direction and are separated from each other. The channel layer is disposed between the first conductive pillar and the second conductive pillar. The memory structure surrounds the second conductive pillar, and the memory structure includes a resistive memory material.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.