Abstract: Embodiments of the present disclosure provide a method of forming N-type and P-type source/drain features using one patterned mask and one self-aligned mask to increase windows of error tolerance and provide flexibilities for source/drain features of various shapes and/or volumes. In some embodiments, after forming a first type of source/drain features, a self-aligned mask layer is formed over the first type of source/drain features without using photolithography process, thus, avoid damaging the first type of source/drain features in the patterning process.

Abstract: A semiconductor device structure includes a fin structure formed over a substrate. The structure also includes a gate structure formed across the fin structure. The structure also includes a source/drain structure formed beside the gate structure. The structure also includes a contact structure formed over the source/drain structure. The structure also includes a dielectric structure extending into the contact structure. The dielectric structure and the source/drain structure are separated by the contact structure.

Abstract: A heat transfer member reinforcement structure includes a main body. The main body has a first side, a second side and a reinforcement member. The reinforcement member is selectively disposed between the first and second sides or inlaid in a sink formed on the first side. The reinforcement member is connected with the main body to enhance the structural strength of the main body.

Abstract: A manufacturing method of thermal module includes steps of: providing at least one aluminum heat conduction component and at least one copper heat conduction component; disposing a copper embedding layer, by means of physical or chemical processing, a copper embedding layer being disposed on a processed section or processed face of the aluminum heat conduction component, which processed section or processed face is correspondingly assembled with the copper heat conduction component; and welding and connecting, the surface of the aluminum heat conduction component, on which the copper embedding layer is disposed, being securely welded and connected with the copper heat conduction component so as to securely connect the aluminum heat conduction component with the copper heat conduction component. By means of the copper embedding layer, the aluminum heat conduction component can be welded and connected with other heat conduction components made of heterogeneous materials and the same material.

Abstract: A thermal module structure includes an aluminum base having an upper and a lower surface, at least one L-shaped copper heat pipe, a first aluminum fin assembly, a second aluminum fin assembly, and at least one copper embedding layer. The copper heat pipe includes a heat absorption section fitted on the aluminum base, and a heat dissipation section connected to the second aluminum fin assembly. The copper embedding layers are provided on the aluminum base at areas corresponding to the first aluminum fin assembly and the heat absorption section of the copper heat pipe, and on a bottom surface of the first aluminum fin assembly that is to be connected to the aluminum base. Thus, the first aluminum fin assembly and the copper heat pipe can be directly welded to the aluminum base via the copper embedding layers without the need of electroless nickel plating.

Abstract: A heat sink structure with heat pipe includes at least one aluminum fin assembly and at least one copper heat pipe, which are made of dissimilar metal materials. The aluminum fin assembly includes at least one through hole and al least one groove, in which a copper embedding layer is provided for contacting with and connected to the copper heat pipe. By providing the copper embedding layer, the connection between the aluminum fin assembly and the copper heat pipe made of dissimilar metal materials is improved, and the problems of eutectic grains formed on the surface of the aluminum fin assembly and environmental pollution caused by electroless nickel plating are eliminated.

Abstract: A heat dissipation device assembly includes an aluminum base seat, an aluminum radiating fin assembly and at least one U-shaped copper heat pipe, which is upright arranged or horizontally arranged. The aluminum base seat has at least one connection section. A copper embedding layer is disposed on the connection section. The aluminum radiating fin assembly is assembled and disposed on the aluminum base seat. The copper heat pipe has a heat dissipation section and a heat absorption section respectively connected on the aluminum radiating fin assembly and the connection section of the aluminum base seat. By means of the copper embedding layer, the aluminum base seat and the copper heat pipe can be directly welded and connected with each other without chemical nickel treatment.

Abstract: A heat dissipation device includes an aluminum base seat and any or both of at least one copper two-phase fluid component and a copper heat conduction component. The aluminum base seat has an upper face and a lower face. A connection section is formed on the lower face and a copper embedding layer is disposed on the connection section. Any or both of the copper two-phase fluid component and the copper heat conduction component are disposed on the connection section and connected with the copper embedding layer. By means of the copper embedding layer disposed on the connection section, the aluminum base seat can be directly welded and connected with the copper two-phase fluid component and/or the copper heat conduction component made of heterogeneous metal materials without chemical nickel treatment procedure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack includes a gate dielectric layer, a first metal-containing layer, a silicon-containing layer, a second metal-containing layer, and a gate electrode layer sequentially stacked over the substrate, the silicon-containing layer is between the first metal-containing layer and the second metal-containing layer, and the silicon-containing layer includes an oxide material.

Abstract: A heat sink assembly with heat pipe includes at least one aluminum fin assembly and at least one copper heat pipe, which are made of dissimilar metal materials. The aluminum fin assembly includes at least one area to be connected to other members of the heat sink assembly, such as a groove. A copper embedding layer is provided on a groove inner surface of the groove for connecting the aluminum fin assembly to the copper heat pipe. By providing the copper embedding layer, the connection between the aluminum fin assembly and the copper heat pipe made of dissimilar metal materials is improved, and the problems of eutectic grains formed on the surface of the aluminum fin assembly and environmental pollution caused by electroless nickel plating are eliminated.

Abstract: A thermal module structure includes an aluminum base having a heat pipe receiving groove formed on one side thereof; a heat dissipation unit including a plurality of radiation fin assemblies or heat sinks and being provided with a first heat pipe receiving section; a plurality of heat pipes made of a copper material and respectively having a heat absorption section and a horizontally extended condensation section; and a copper embedding layer provided on surfaces of the heat pipe receiving groove and the first heat pipe receiving section. The aluminum base and the heat dissipation unit are horizontally parallelly arranged. The heat absorption sections are fitted in the heat pipe receiving groove, and the condensation sections are extended through the first heat pipe receiving section. With the copper embedding layer, the aluminum base and the heat dissipation unit can be directly welded to the heat pipes.

Abstract: A thermal module assembling structure includes an aluminum base seat which has a heat absorption side, a heat conduction side and a connection section. The connection section is selectively disposed on the heat absorption side, the heat conduction side or embedded in the aluminum base seat (between the heat absorption side and the heat conduction side). The connection section is correspondingly connected with at least one copper heat pipe. A copper embedding layer is disposed on a portion of the connection section, which portion is in contact and connection with the copper heat pipe. A welding material layer is disposed between the copper embedding layer and the copper heat pipe, whereby the aluminum base seat and the copper heat pipe can be more securely connected with each other. The conventional chemical nickel plating is replaced with the copper embedding layer so as to improve the problem of environmental pollution, etc.

Abstract: One or more active region structures each protrude vertically out of a substrate in a vertical direction and each extend horizontally in a first horizontal direction. A source/drain component is disposed over the one or more active region structures in the vertical direction. A source/drain contact is disposed over the source/drain component in the vertical direction. The source/drain contact includes a bottom portion and a top portion. A protective liner is disposed on side surfaces of the top portion of the source/drain contact but not on side surfaces of the bottom portion of the source/drain contact.

Abstract: The present disclosure describes a device that is protected from the effects of an oxide on the metal gate layers of ferroelectric field effect transistors.

Abstract: An integrated circuit device is provided that includes a first fin structure and a second fin structure extending from a substrate. The first fin structure is a first composition, and includes rounded corners. The second fin structure is a second composition, different than the first composition. A first interface layer is formed directly on the first fin structure including the rounded corners and a second interface layer directly on the second fin structure. The first interface layer is an oxide of the first composition and the second interface layer is an oxide of the second composition. A gate dielectric layer is formed over the first interface layer and the second interface layer.

Abstract: The present disclosure relates to a semiconductor device including a substrate and first and second spacers on the substrate. The semiconductor device also includes a gate stack between the first and second spacers. The gate stack includes a gate dielectric layer having a first portion formed on the substrate and a second portion formed on the first and second spacers; an internal gate formed on the first and second portions of the gate dielectric layer; a ferroelectric dielectric layer formed on the internal gate and in contact with the gate dielectric layer; and a gate electrode on the ferroelectric dielectric layer.

Abstract: The present disclosure provides a slurry. The slurry includes an abrasive including a ceria compound; a removal rate regulator to adjust removal rates of the slurry to metal and to dielectric material; and a buffering agent to adjust a pH value of the slurry, wherein the slurry comprises a dielectric material removal rate higher than a metal oxide removal rate.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate. A first gate structure and a second gate structure are across the first and second fins, respectively. An insulating structure is formed between the first gate structure and the second gate structure and includes a first insulating layer separating the first fin from the second fin, a capping structure formed in the first insulating layer, and a second insulating layer covered by the first insulating layer and the capping structure.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming an interfacial oxide layer on the fin structure, forming a first dielectric layer over the interfacial oxide layer, forming a dipole layer between the interfacial oxide layer and the first dielectric layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The dipole layer includes ions of first and second metals that are different from each other. The first and second metals have electronegativity values greater than an electronegativity value of a metal or a semiconductor of the first dielectric layer.

Abstract: The present invention relates to a method and a system for processing building energy information. The method includes the following steps: inputting data of a building information model into building energy simulation software; automatically selecting a building category or manually selecting a building category from a group of building categories provided by the building energy simulation software; in response to the selected building category, inputting a plurality of parameters into a lookup table of the building energy simulation software in accordance with a database of the building energy simulation software; and generating an estimation of a building's energy consumption through a calculation by the building energy simulation software based on the parameters.