Abstract: An air pressure relief valve providing relief against both gradual and sudden changes in pressure is disposed on an opening of an assembly of parts. The valve includes a plurality of blades, the blades are circumferentially distributed and abut each other. Each blade includes a nozzle end, the nozzle ends abut each other, and a part of the nozzle end on each blade allows deformation by internal air pressure to form an air hole, wherein air can enter or exit the functional assembly through the air hole. The thickness of the blade gradually decreases in direction from a thick base end to the thinner-section air nozzle end.

Abstract: One or more active region structures each protrude vertically out of a substrate in a vertical direction and each extend horizontally in a first horizontal direction. A source/drain component is disposed over the one or more active region structures in the vertical direction. A source/drain contact is disposed over the source/drain component in the vertical direction. The source/drain contact includes a bottom portion and a top portion. A protective liner is disposed on side surfaces of the top portion of the source/drain contact but not on side surfaces of the bottom portion of the source/drain contact.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack includes a gate dielectric layer, a first metal-containing layer, a silicon-containing layer, a second metal-containing layer, and a gate electrode layer sequentially stacked over the substrate. The silicon-containing layer is between the first metal-containing layer and the second metal-containing layer, and the silicon-containing layer is thinner than the second metal-containing layer.

Abstract: The present disclosure describes a device that is protected from the effects of an oxide on the metal gate layers of ferroelectric field effect transistors. In some embodiments, the device includes a substrate with fins thereon; an interfacial layer on the fins; a crystallized ferroelectric layer on the interfacial layer; and a metal gate layer on the ferroelectric layer.

Abstract: A dust-excluding carrier for product storage comprises a housing cavity and dust-excluding isolation members. The dust-excluding isolation member comprises a first main body, the first main body is provided with a first opening; the material tray and the dust-excluding isolation member are detachably connected. The material tray comprises a second main body with a second opening. The first main body and the second main body may be snap-fitted together and apart, so the first opening is covered by the second body and the second opening covered by the first body.

Abstract: A mechanism is provided for automatically detecting, diagnosing, transporting, and repairing devices having failed during burn-in testing. Embodiments provide a system that monitors devices undergoing burn-in testing and detecting when a device or a component within a device fails the burn-in test. Embodiments can then alert burn-in-rack monitor personnel of the device failure. Embodiments can concurrently determine the nature of the failure applying a machine learning-based prediction model against log files associated with the failed device. The diagnosis along with a recommended repair strategy can be provided to the repair center as an aid in accelerating the repair process. In addition, the diagnosis can be used to order parts for the repair from a parts depot. In this manner, embodiments can reduce the time for detection, diagnosis, and repair of the failed device.

Abstract: A dual heat transfer structure, comprising: at least a heat pipe and at least a vapor chamber; the heat pipe having a first end, an extension portion, and a second end, the first and second ends disposed at the two ends of the extension portion; the vapor chamber being concavely bent with its two ends being joined together and selectively compasses, encircles, encloses, or surrounds one of the first and second ends and extension portion. The dual heat transfer structure of the present invention is a complex structure that can both transfer heat with a large area and to the distal end of the structure.

Abstract: A MRI-guided stereotactic surgery method including the following steps: assigning coordinates of a surgery target point of a surgery cannula and an insertion direction of the surgery cannula; performing coordinate transformation to transform the coordinates of the surgery target point into an insertion position of the surgery target point; substituting the insertion position and the insertion direction into an inverse kinematics model to obtain five parameters respectively corresponding to five degrees of freedom of a MRI-compatible stereotactic surgery device; controlling the MRI-compatible stereotactic surgery device according to the parameters to start a stereotactic surgery procedure, thereby inserting the surgery cannula; obtaining an actual cannula position according to a magnetic resonance (MR) image; comparing the actual cannula position with the surgery target point to obtain a position error vector; and withdrawing the surgery cannula to finish the stereotactic surgery procedure when the position er

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, first and second fin structures formed over the substrate, and an isolation structure between the first and second fin structures. The isolation structure can include a lower portion and an upper portion. The lower portion of the isolation structure can include a metal-free dielectric material. The upper portion of the isolation structure can include a metallic element and silicon.

Abstract: The present disclosure relates to a semiconductor device including a substrate and first and second spacers on the substrate. The semiconductor device also includes a gate stack between the first and second spacers. The gate stack includes a gate dielectric layer having a first portion formed on the substrate and a second portion formed on the first and second spacers; an internal gate formed on the first and second portions of the gate dielectric layer; a ferroelectric dielectric layer formed on the internal gate and in contact with the gate dielectric layer; and a gate electrode on the ferroelectric dielectric layer.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming an interfacial oxide layer on the fin structure, forming a first dielectric layer over the interfacial oxide layer, forming a dipole layer between the interfacial oxide layer and the first dielectric layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The dipole layer includes ions of first and second metals that are different from each other. The first and second metals have electronegativity values greater than an electronegativity value of a metal or a semiconductor of the first dielectric layer.

Abstract: The method includes receiving a semiconductor device having a first surface and a second surface. The first surface is a top surface including a conductive material exposed thereon; and the second surface is an embedded surface including the conductive material and a dielectric material. The method also includes selecting a first polishing slurry to achieve a first polishing rate of the conductive material in the first polishing slurry and a second polishing rate of the dielectric material in the first polishing slurry. The method further includes selecting a second polishing slurry to achieve a third polishing rate of the conductive material in the second polishing slurry and a fourth polishing rate of the dielectric material in the second polishing slurry. The method additionally includes polishing the first surface with the first polishing slurry until the second surface is exposed; and polishing the second surface with the second polishing slurry.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming a metallic oxide layer within the gate opening, forming a first dielectric layer on the metallic oxide layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The forming the first dielectric layer includes depositing an oxide material with an oxygen areal density less than an oxygen areal density of the metallic oxide layer.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming an interfacial oxide layer on the fin structure, forming a first dielectric layer over the interfacial oxide layer, forming a dipole layer between the interfacial oxide layer and the first dielectric layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The dipole layer includes ions of first and second metals that are different from each other. The first and second metals have electronegativity values greater than an electronegativity value of a metal or a semiconductor of the first dielectric layer.

Abstract: The disclosure provides an electronic device including a substrate, a first semiconductor element, and a first protective structure. The first semiconductor element is disposed on the substrate and electrically connected to the substrate. The first semiconductor element has a first surface away from the substrate. The first protective structure covers at least a portion of the first surface.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The semiconductor device includes a first gate structure and a second gate structure. The first gate structure includes a first interfacial oxide (IO) layer, a first high-K (HK) dielectric layer disposed on the first interfacial oxide layer, and a first dipole layer disposed at an interface between the first IL layer and the first HK dielectric layer. The HK dielectric layer includes a rare-earth metal dopant or an alkali metal dopant. The second gate structure includes a second IL layer, a second HK dielectric layer disposed on the second IL layer, and a second dipole layer disposed at an interface between the second IL layer and the second HK dielectric layer. The second HK dielectric layer includes a transition metal dopant and the rare-earth metal dopant or the alkali metal dopant.

Abstract: A spectral method is provided for partitioning type and loading with aerosol optical depth. Based on multi-spectral optical aerosol depth, particle-size distribution and refractive index are derived by normalizing first- and second-order derivatives for processing quantitative calibration of main components. According to the optical feature parameters of various aerosol types, a radiation theory is applied to simulate multi-spectral optical depth for each density, including those of mixed types. The intrinsic parameters of aerosol types are figured out by constructing normalized derivative aerosol indices (NDAI). The clear characteristic differences between aerosol types are used to figure out main components of aerosols and their mixing ratios. The simulation result of the normalized index of various aerosol type is in good agreement with the ground observation data of Aerosol Robotic Network. It shows that NDAI is quite practicable in quantitative calibration of main components of atmospheric aerosol.

Abstract: A heat dissipation device includes a base having a first surface in contact with at least one heat source and an opposite second surface having a heat dissipation zone upward extended therefrom; an auxiliary heat dissipation zone horizontally extended from one of four lateral sides or directions of the heat dissipation zone; an air guiding section defined at the auxiliary heat dissipation zone; and at least one upward indented zone formed between the auxiliary heat dissipation zone and the side of the heat dissipation zone having the auxiliary heat dissipation zone sideward sidewardly extended from a higher portion thereof. With these arrangements, the heat dissipation device can guide air flow currents directly or indirectly to a plurality of heat sources located corresponding to the heat dissipation zone and the auxiliary heat dissipation zone at the same time to cool them.

Abstract: The present disclosure describes a method and an apparatus that can enhance the slurry oxidizability for a chemical mechanical polishing (CMP) process. The method can include securing a substrate onto a carrier of a polishing system. The method can further include dispensing, via a feeder of the polishing system, a first slurry towards a polishing pad of the polishing system. The method can further include forming a second slurry by enhancing an oxidizability of the first slurry, and performing a polishing process, with the second slurry, on the substrate.

Abstract: A method includes forming a dummy gate stack over a semiconductor region, forming a source/drain region on a side of the dummy gate stack, removing the dummy gate stack to form a trench, depositing a gate dielectric layer extending into the trench, depositing a metal-containing layer over the gate dielectric layer, and depositing a silicon-containing layer on the metal-containing layer. The metal-containing layer and the silicon-containing layer in combination act as a work-function layer. A planarization process is performed to remove excess portions of the silicon-containing layer, the metal-containing layer, and the gate dielectric layer, with remaining portions of the silicon-containing layer, the silicon-containing layer, and the gate dielectric layer forming a gate stack.