Abstract: A method for forming a package structure is provided. The method includes bonding a package component to a substrate through a plurality of first connectors. The package component comprises a first semiconductor die and a second semiconductor die. The method also includes forming a dam structure over the substrate and surrounding the first connectors. A top surface of the dam structure is lower than a bottom surface of the package component. The method further includes filling an underfill layer in a space between the dam structure and the first connectors. In addition, the method includes removing the dam structure after the underfill layer is formed.

Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. A first terminal of the first transistor is configured to receive a reference voltage signal, a control terminal of the first transistor is configured to receive a detection signal in response to an ESD event being detected, a second terminal of the first transistor is coupled to a control terminal of the third transistor, and a control terminal of the second transistor is configured to receive the logic control signal.

Abstract: A method for synthesizing an intergrown twin Ni2Mo6S6O2/MoS2 two-dimensional nanosheet with exposed (00L) crystal planes is disclosed. An Ni-Mo bonded precursor is formed by using an ion insertion method to restrict Ni ions to be located in a lattice matrix of a Mo-based compound; a dinuclear metal sulfide Ni2Mo6S6O2 is formed by precisely adjusting and controlling a concentration of a sulfur atmosphere and utilizing a reconstruction effect of Ni element in the lattice matrix of the Mo-based compound; and meanwhile, a growth direction of Ni2Mo6S6O2 is precisely adjusted and controlled by using a method for growing a single crystal in a limited area, so that Ni2Mo6S6O2 is grown, taking a single crystal MoS2 as a growth template, with the single crystal MoS2 alternately along a crystal plane (110) of the single crystal MoS2, so as to form a twin Ni2Mo6S6O2/MoS2 two-dimensional nanosheet in which Ni2Mo6S6O2and MoS2 are intergrown.

Abstract: Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

Abstract: A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a semiconductor die, conductive through vias, an insulating encapsulant, and a redistribution structure. The conductive through vias are electrically coupled to the semiconductor die. The insulating encapsulant laterally encapsulates the semiconductor die and the conductive through vias, wherein the insulating encapsulant has a recess ring surrounding the semiconductor die, the conductive through vias are located under the recess ring, and a vertical projection of each of the conductive through vias overlaps with a vertical projection of the recess ring. The redistribution structure is electrically connected to the semiconductor die and the conductive through vias.

Abstract: A polarization modulator includes a first liquid crystal cell and a second liquid crystal cell. The first liquid crystal cell has a first type of liquid crystals configured to rotate an optical axis of light parallel to a first plane of the first liquid crystal cell. The second liquid crystal cell is configured to receive the light from the first liquid crystal cell. The second liquid crystal cell has a second type of liquid crystals configured to rotate the optical axis of the light perpendicular to a second plane of the second liquid crystal cell.

Abstract: A memory performance optimization method, a memory control circuit unit, and a memory storage device are provided. The method includes the following. An idle time of the memory storage device is counted in an active mode. The memory storage device is instructed to enter a first low electricity consumption mode from the active mode in response to the idle time being greater than an idle threshold. A first waiting time of the memory storage device is counted in the first low electricity consumption mode. The memory storage device is instructed to enter a second low electricity consumption mode from the first low electricity consumption mode in response to the first waiting time being greater than a first waiting threshold. Electricity consumption of the second low electricity consumption mode is lower than electricity consumption of the first low electricity consumption mode.

Abstract: A multi-channel memory storage device, a memory control circuit unit, and a data reading method are provided. The method includes: determining whether a storage space of a buffer memory is insufficient when a multi-channel access is performed; issuing a data read command corresponding to each of a plurality of multi-channels to a rewritable non-volatile memory module according to a logical address in a host read command in response to insufficient storage space of the buffer memory to read data corresponding to each of the plurality of multi-channels from a data storage area to a data cache area via the plurality of multi-channels; and allocating the storage space of the buffer memory to the rewritable non-volatile memory module after the storage space of the buffer memory is released and issuing a cache read command to move first data in data temporarily stored in the data cache area to the buffer memory.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming at least one epitaxial layer over a substrate; forming a mask over the epitaxial layer; patterning the epitaxial layer into a semiconductor fin; depositing a semiconductor capping layer over the semiconductor fin and the mask, wherein the semiconductor capping layer has a first portion that is amorphous on a sidewall of the mask; performing a thermal treatment such that the first portion of the semiconductor capping layer is converted from amorphous into crystalline; forming an isolation structure around the semiconductor fin; and forming a gate structure over the semiconductor fin.

Abstract: A multi-channel memory storage device, a memory control circuit unit, and a data reading method are provided. The method includes: determining whether a storage space of a buffer memory is insufficient when a multi-channel access is performed; issuing a data read command corresponding to each of a plurality of multi-channels to a rewritable non-volatile memory module according to a logical address in a host read command in response to insufficient storage space of the buffer memory to read data corresponding to each of the plurality of multi-channels from a data storage area to a data cache area via the plurality of multi-channels; and allocating the storage space of the buffer memory to the rewritable non-volatile memory module after the storage space of the buffer memory is released and issuing a cache read command to move first data in data temporarily stored in the data cache area to the buffer memory.

Abstract: A method for forming a package structure is provided. The method for forming a package structure includes bonding a package component to a first surface of a substrate through a plurality of first connectors. The package component includes a first semiconductor die and a second semiconductor die. The method also includes forming a dam structure over the first surface of the substrate. The dam structure is around and separated from the package component, and a top surface of the dam structure is higher than a top surface of the package component. The method further includes forming an underfill layer between the dam structure and the package component. In addition, the method includes removing the dam structure after the underfill layer is formed.

Abstract: Disclosed herein are methods of treating a tumor in a subject, including administering to the subject one or more miRNA nucleic acids or variants (such as mimics or mimetics) thereof with altered expression in the tumor. Also disclosed herein are compositions including one or more miRNA nucleic acids. In some examples, the miRNA nucleic acids are modified miRNAs, for example, and miRNA nucleic acid including one or more modified nucleotides and/or a 5?-end and/or 3?-end modification. In particular examples, the modified miRNA nucleic acid is an miR-30a nucleic acid. Further disclosed herein are methods of diagnosing a subject as having a tumor with altered expression of one or more miRNA nucleic acids. In some embodiments, the methods include detecting expression of one or more miRNAs in a sample from the subject and comparing the expression in the sample from the subject to a control.

Abstract: A method of manufacturing a semiconductor device includes following operations. A substrate is received. An electrical conductor is formed over a surface of the substrate. A photo-curable material is selectively dispensed over the surface of the substrate. The photo-curable material is irradiated to form a passivation layer is formed over the surface of the substrate. The passivation layer partially covers an edge of the electrical conductor.

Abstract: Provided is a nanofiltration composite membrane, comprising: a supporting layer comprising a polyethylene terephthalate, a polymeric porous layer formed on the supporting layer, the polymeric porous layer comprising a polysulfone and an amphiphilic polymer represented by the formula below: and an interfacial polymerization layer formed on the polymeric porous layer and the interfacial polymerization layer comprising polyamide which is synthesized by polymerizing piperazine with 1,3,5-benzenetricarbonyl trichloride; wherein, n1, n2, n3, x, and y are integers greater than 0, the molecular weight of the amphiphilic polymer ranges from 90,000 to 200,000, and a weight ratio of the polysulfone to the amphiphilic polymer ranges from 2 to 20. The nanofiltration composite membrane can increase the removal rate of divalent ions and separate substances of specific molecular weights in solutions.

Abstract: An antioxidant for use in treatment for a radiation-induced bystander effect to a transplanted cell in a host is provided. The antioxidant is N-acetyl-L-cysteine, sulforaphane or resveratrol, or a combination thereof. The RIBE on transplanted human hematopoietic cells impaired the long-term hematopoietic reconstitution of human HSCs as well as the colony-forming ability of HPCs, and the RIBE-affected human hematopoietic cells showed enhanced DNA damage responses, cell cycle arrest and p53-dependent apoptosis, mainly due to oxidative stress. Taken together, these findings suggest that RIBE impairs human HSCs by oxidative DNA damage. The present disclosure provides definitive evidence for RIBE in transplanted human HSCs and further justifies the necessity for conducting clinical trials to assess the ability of multiple antioxidants to improve the efficacy of HSC transplantation for patients with hematological or non-hematological disorders.

Abstract: A voltage tracking circuit includes first, second, third and fourth transistors. The first transistor is in a first well, and includes a first gate, a first drain and a first source coupled to a first voltage supply. The second transistor includes a second gate, a second drain and a second source. The second source is coupled to the first drain. The second gate is coupled to the first gate and the pad voltage terminal. The third transistor includes a third gate, a third drain and a third source. The fourth transistor includes a fourth gate, a fourth drain and a fourth source. The fourth drain is coupled to the third source. The fourth source is coupled to the pad voltage terminal. The fourth transistor is in a second well different from the first well, and is separated from the first well in a first direction.

Abstract: A memory performance optimization method, a memory control circuit unit, and a memory storage device are provided. The method includes the following. An idle time of the memory storage device is counted in an active mode. The memory storage device is instructed to enter a first low electricity consumption mode from the active mode in response to the idle time being greater than an idle threshold. A first waiting time of the memory storage device is counted in the first low electricity consumption mode. The memory storage device is instructed to enter a second low electricity consumption mode from the first low electricity consumption mode in response to the first waiting time being greater than a first waiting threshold. Electricity consumption of the second low electricity consumption mode is lower than electricity consumption of the first low electricity consumption mode.

Abstract: Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

Abstract: A memory polling method, a memory storage device and a memory control circuit unit are provided. The memory polling method includes: detecting a plurality of busy times corresponding to a plurality of physical units when executing a plurality of first commands; counting the busy times corresponding to the physical units to generate a count statistic value, and determine a delay time based on the count statistic value; and transmitting a plurality of status requests to a rewritable non-volatile memory module after the delay time.