Abstract: An FET with a source-substrate connection (source-down FET) and a trench gate includes a drain zone of a first conductivity type provided on a first surface of a semiconductor layer of the first conductivity type that is disposed on a semiconductor substrate of the first conductivity type. The trench gate substantially penetrates the semiconductor layer. A source zone of the first conductivity type is provided at an end of the trench on a second surface of the semiconductor layer. A semiconductor zone of the second conductivity type is provided in a region next to the trench on the second surface of the semiconductor layer. The semiconductor zone has a surface which forms the second surface of the semiconductor layer together with the surface of the source zone. A method for producing the FET is also provided.

Abstract: The electrical switch component has two temperature sensors. The first temperature sensor is provided at that location of the component which is warmest during operation. The first sensor switches the component off when a first, upper threshold value is reached, and switches the component on when the temperature falls below a second, lower threshold value. The oscillation owing to the first temperature sensor is switched on and off by the second temperature sensor, which is arranged remote from the first temperature sensor at a location that is less warm than the first temperature sensor. The second sensor has lower threshold values than the first temperature sensor.

Abstract: The CMOS comparator has four p-channel lateral high-voltage transistors (T.sub.11 -T.sub.14) which form two first current mirrors, and two n-channel lateral high-voltage transistors (T.sub.31, T.sub.32) which form a second current mirror. In the current path of the reference voltage, there is a depletion type transistor (T.sub.2) which determines the current flowing there. If the input voltage (U.sub.IN) is equal to the reference voltage (U.sub.ref), then an equal current flows in both current paths. If the input voltage (U.sub.IN) deviates from the reference voltage (U.sub.ref), however, then the output voltage changes dramatically.

Abstract: A trigger circuit for a field-effect-controlled power semiconductor component has a controllable gate resistor for the power semiconductor component, which has low impedance in a normal situation and is switched to high impedance in the event of a short circuit. As a result, the turn-on time in the normal situation is shortened, and limiting the gate-to-source voltage of the power semiconductor component in the short-circuit situation is made possible.

Abstract: The circuit configuration captures the load current of a field effect-controllable power semiconductor component. The drain and gate terminals of a further field effect-controllable semiconductor component are connected to the drain and gate terminals, respectively, of the first semiconductor component. A fraction of the load current flows through the further semiconductor component. The load current of the further semiconductor component is set as a function of the drain-to-source voltage of the two semiconductor components. The load current flowing through the further semiconductor component is compared with a reference current and an output signal is generated if the load current falls below a set value.

Abstract: The field effect-controllable semiconductor component has a drain zone of the first conductivity type and also at least one gate electrode which is composed of polycrystalline silicon and is insulated from the drain zone. A source region of the second conductivity type is introduced in the drain zone. In addition, there is formed in the drain zone a trench structure, which reach from the surface of the epitaxial layer down into the substrate layer. An additional field plate made of polysilicon and embedded in an oxide layer is introduced in the trench structure. The thickness of the oxide surrounding the field plate increases down in a direction towards the drain.

Abstract: A field-effect-controllable, vertical semiconductor component, and a method for producing the semiconductor component include a semiconductor body having at least one drain zone of a first conduction type, at least one source zone of the first conduction type, at least one gate electrode insulated from the entire semiconductor body by a gate oxide, and a bulk region of the first conduction type. A source terminal is located on the rear side of the wafer, and a drain terminal and a gate terminal are located on the front side of the wafer.

Abstract: A field-effect-controllable semiconductor component includes a semiconductor body with first and second surfaces. An inner zone of a first conduction type adjoins the first surface. An anode zone of the opposite, second conduction type adjoins the inner zone in the direction of the first surface and adjoins the second surface in the opposite direction. At least one first base zone of the second conduction type is embedded in the first surface. At least one source zone of the first conduction type is embedded in the first surface. At least one source electrode makes contact with the base zones and the source zones. At least one gate electrode is insulated from the semiconductor body and the source electrode by a gate oxide and at least partly covers parts of the first base zones appearing at the first surface. Intermediate cell zones contain the source zones. Trenches enclose the intermediate cell zones and are insulated from the intermediate cell zones by a gate oxide.

Abstract: A circuit configuration for driving or triggering a power FET connected in series with a load on the source side and coupled to a supply voltage terminal on the drain side, includes a charge pump supplying an output signal fed to a gate terminal of the power FET, a depletion-mode FET having a load path through which a gate-source capacitance of the power FET can be discharged, a device for driving or triggering the charge pump and the depletion-mode FET, and a further device for pulling the source of the depletion-mode FET in the direction of the supply voltage, as a function of the drive or trigger signal.

Abstract: The MOSFET of the invention has a switching element connected between its gate and its source. The switching element causes a reduction of the gate-to-source voltage of the MOSFET. The switching element is driven via a diode, which is connected in the blocking direction between the drain of the MOSFET and a control terminal of the switching element.

Abstract: A semiconductor component having a body with an upper surface, a base zone having a portion adjoining the upper surface of the semiconductor body, at least one source zone embedded in the base zone, at least one gate electrode lying parallel to the upper surface that covers at least the portion of the base zone adjoining the upper surface, a contact region constructed and arranged as a buried layer in the base zone and projecting laterally beyond the source zone, the contact region having a higher conductivity than that of the base zone, and an electrode that contacts the source zone and the contact region. In order to improve the contact between base zone and source electrode, the contact region is fashioned as a layer buried in the base zone and projects laterally beyond the source zone.

Abstract: An integrated comparator circuit includes a first terminal and a second terminal for an operating voltage. An input stage has two complementary MOSFETS having main current paths connected in series defining a common connecting point therebetween. The two MOSFETS have gate terminals connected to the common connecting point. The series circuit of the MOSFETS is connected between the first terminal and a third terminal. An inverter stage has two complementary MOSFETS having main current paths connected in series defining a common connecting point therebetween forming an output terminal. The two complementary MOSFETS have gate terminals connected to the common connecting point of the input stage. The second terminal and the third terminal receive an input signal of the comparator circuit. A fourth terminal is provided for application of a reference potential to determine a switching threshold of the comparator circuit.

Abstract: A circuit configuration includes first and second terminals, a power switch having a control terminal, an electronic switch connected between the control terminal and the second terminal for turning off the power switch at excess temperature, a temperature sensor circuit connected between the first and second terminals and connected to the electronic switch, a switch device connected between the first terminal and the control terminal and a control device connected between the first and second terminals. The control device has an output side connected to the switch device. A semiconductor body includes an n.sup.- -doped base body having upper and lower main surfaces. An n.sup.+ -doped layer adjoins the lower main surface of the base body. A first region has p.sup.+ -doped regions embedded on the upper main surface and n.sup.+ -doped wells contained in the p.sup.+ -doped regions to form a vertical power MOSFET with a drain electrode connected to the n.sup.+ -doped layer.

Abstract: A field-effect-controllable power semiconductor component has a drain terminal, a source terminal, a gate terminal, a drain-to-source voltage and a load current. A circuit configuration for detecting the load current of the power semiconductor component includes a further field-effect-controllable semiconductor component through which a fraction of the load current flows. The further semiconductor component has a drain terminal connected to the drain terminal of the power semiconductor component, a gate terminal connected to the gate terminal of the power semiconductor component, a source terminal and a drain-to-source voltage. A resistor at which a voltage proportional to the load current can be picked up, is connected to a fixed potential terminal. A controllable resistor is connected between the resistor and the source terminal of the further semiconductor component.

Abstract: Power MOSFETs with a source-side load are often triggered by so-called charge pumps. In order to provide a faster turnoff, until now the gate-to-source capacitance of the power MOSFET, which is typically constructed as an enhancement MOSFET, has been discharged through a depletion MOSFET that is parallel to the gate-to-source path. Those different MOSFET types require complicated and expensive production technology. A circuit configuration is proposed that makes it possible to use solely enhancement MOSFETs.

Abstract: In power switches, reports should be issued frequently when the load becomes high in impedance and the load current drops below a predetermined value. In the idling case, however, the voltage drop at the power switch is very low and therefore can only be measured with some inaccuracy. Accurate detection of the reduction in the load current is possible, if a resistor is connected parallel, in the ON-state, to the load path of the power switch. The resistance of the resistor is greater by a multiple than the resistance of the internal resistor of the load path of the power switch. A comparator compares the voltage dropping at the load path of the power switch and therefore at the resistor with a predetermined reference voltage, and it signals the dropping of the load current below a value defined by the ratio of the reference voltage and the resistance of the resistor.

Abstract: An integrated power semiconductor component includes a substrate of a first conduction type. At least one first region of a second conduction type is embedded in the substrate and at least one second region of the second conduction type is embedded in the substrate. A substrate contact supplies a supply voltage. Contact-making semiconductor components are embedded in the first region and in the second region. At least a portion of the semiconductor components in the first region control at least a portion of the semiconductor components in the second region. A third region of the second conduction type is disposed between the first region and the second region, and the first region and the third region are at different potentials.

Abstract: Power transistors, especially MOSFETs and IGBTs, must be protected adequately in the ON state against a short circuit in the load circuit, in order to avoid their destruction. Until now, the power transistor was turned off if a short-circuit current appeared by providing that its gate-to-source path, in the event of a short circuit, was short-circuited through another transistor, and the power transistor was thus turned off. However, if that readjustment of the current took place too fast, the power transistor was able to be damaged by overvoltage. That is counteracted by a voltage sensor configuration, which detects the voltage change in the load path of the power transistor and reduces the potential at the control terminal connection of the other transistor if the output voltage rises.

Abstract: The temperature of a power semiconductor component is monitored by feeding the block current of a bipolar transistor which is in thermal contact with the component to an amplifying current mirror. The output signal of the current mirror is compared with a reference current. If the mirrored current is greater than the reference current, then the system produces a corresponding output. Temperatures of the power semiconductor component below 140.degree. C. can be reliably detected.

Abstract: A configuration for protecting a first semiconductor component being controllable by field effect against electrostatic discharges, includes a voltage-limiting, protective, second semiconductor component being connected to the gate terminal of the first semiconductor component. The second semiconductor component is an integrated bipolar transistor having a collector-to-emitter path being connected between the drain terminal and the gate terminal of the first semiconductor component.