Abstract: A nonvolatile semiconductor memory device is provided for a high-powered system without the need for an additional system setting process to set the system initialization state after power-on to the previous state. The nonvolatile semiconductor memory device comprises a pull-up driving unit configured to include a plurality of nonvolatile cells for storing inputted data and to pull up a storage node, a pull-down driving unit configured to pull down the storage node, and a plurality of data registers including a data input/output unit configured to selectively input/output data between a bit line and the storage node depending on a voltage applied to a word line.

Abstract: A data latch circuit for latching a data signal in synchronization with a clock signal includes a hold time delay unit for generating a first clock signal by delaying the clock signal for a hold time of the data signal and an inverse first clock signal as a second clock signal; a data input control unit for generating a first data transition detection signal in response to the first clock signal and a first transition timing of the data signal and a second data transition detection signal in response to the second clock signal and a second transition timing of the data signal; and a data latch unit for starting latching the data signal in response to the first data transition detection signal and finishing the latching of the data signal in response to the second data transition detection signal.

Abstract: A semiconductor memory device for outputting or storing a data in response to inputted address and command includes a first cell array for outputting the data to one of a bit line and a bit line bar; a first reference cell block for outputting a reference signal to the other of the bit line and the bit line bar; a sense amplifying block for sensing and amplifying a voltage difference between the bit line and the bit line bar; and a floating control block for floating the bit line and the bit line bar if a precharge command signal is activated.

Abstract: An integrated circuit (IC) includes a high capacitance solid state circuit region configured to perform predetermined operations, a RFID block comprising a FeRAM block for storing data, and an interface unit configured to transfer to the RFID block an externally-provided unique ID for wirelessly identifying the IC, the unique ID being stored in the FeRAM block. The IC further includes a conductive trace extending through predetermined regions of the IC, the conductive trace being configured as an antenna for the RFID block, wherein the RFID block is configured to receive and transmit information to an external source via the antenna.

Abstract: The present invention discloses an improved DRAM of semiconductor device and method for manufacturing the same wherein an ONO (oxide-nitride-oxide) structure for trapping electrons or holes used in a non-volatile memory is employed in a gate insulating film of the DRAM to reduce impurity concentrations of a channel region and a well region.

Abstract: A unit cell included in a non-volatile dynamic random access memory (NVDRAM) includes a control gate layer coupled to a word line; a capacitor for storing data; a floating transistor for transmitting stored data in the capacitor to a bit line, gate of the floating transistor being a single layer and serving as a temporary data storage; and a first insulating layer between the control gate layer and the gate of the floating transistor, wherein a voltage supplied to body of the floating transistor is controllable.

Abstract: An apparatus included in a semiconductor memory device for precharging a bit line and a bit line bar and sensing and amplifying a data delivered to one of the bit line and the bit line bar includes a precharge means for precharging the bit line and the bit line bar as a ground; a sense amplifying means for sensing and amplifying the data by using a low voltage having a lower voltage level than the ground and a high voltage having a higher voltage level than a supply voltage; and an auxiliary sense amplifying means coupled to the bit line and the bit line bar for controlling each voltage level of the bit line and the bit line bar.

Abstract: A transistor and a method for manufacturing the same are disclosed. One cell transistor having silicon-insulator-silicon (“SIS”) structure and two cell transistors having silicon-oxide-nitride-oxide-silicon (“SONOS”) structure constitute the transistor of the present invention which can store 2 bits. The cell transistor having SIS structure and the cell transistors having SONOS structure share one common gate electrode so that the transistor of the present invention requires only one voltage generation and control circuit.

Abstract: A semiconductor memory device includes a first cell block having a plurality of unit cells for providing a data signal included in a unit cell through a corresponding bit line pair; a plurality of bit line sense amplifying blocks for sensing and amplifying the data signal delivered to the corresponding bit line pair by using the power supply voltage and a low voltage which is lower than the ground voltage; a decoding unit for generating a plurality of decoding signals to provide the plurality of decoding signals into the plurality of bit line sense amplifying blocks respectively in order to deliver the sensed and amplified data signal to a data line; and a low voltage generation unit for generating the low voltage by using a parasitic capacitor generated at a signal line of the decoding signal as a storing capacitor.

Abstract: A nonvolatile ferroelectric memory device and a control method thereof are provided to control read/write operations of memory cell arrays whose channel resistance is differentiated depending on a polarity state of a ferroelectric material. In the device, data read from a memory cell are sensed and amplified through a sense amplifier, and the amplified data are stored in a register. Then, high data are written in all activated cells. Thereafter, new data applied from a data bus unit to a selected memory cell are written in response to an output signal from a column decoder, and data stored in the register are written-back in an unselected memory cell.

Abstract: A data input buffer for use in a semiconductor device, including: a detection unit for receiving a reference voltage signal and an input data signal through a first input terminal and a second input terminal respectively in order to detect a voltage level of the input data signal based on a result of comparing the input data signal with the reference voltage in response to a clock enable signal inputted through a third input terminal; and a noise elimination unit connected between the first input terminal and the third input terminal for eliminating a noise of the reference voltage signal.

Abstract: A semiconductor device for refreshing data stored in a memory device includes a cell area having N+1 number of unit cell blocks, each including M number of word lines which respectively are coupled to a plurality of unit cells; a tag block having N+1 number of unit tag blocks, each storing at least one physical cell block address denoting a row address storing a data; and a control block for controlling the tag block and the predetermined cell block table for refreshing the data in the plurality of unit cells coupled to a word line in response to the physical cell block address.

Abstract: A nonvolatile ferroelectric memory device features a multi-bit serial cell structure where read bit lines and write bit lines are divided to control read/write paths individually, thereby improving a transmission operation of serial data. In the nonvolatile ferroelectric memory device, a serial cell that comprises a plurality of switching devices and a plurality of ferroelectric capacitors is connected serially between a write switching device and a read switching device. The serial cell stores cell data applied from the write bit line sequentially in the plurality of ferroelectric capacitors at a write mode, and outputs the cell data stored in a plurality of ferroelectric capacitors to the read bit line at a read mode.

Abstract: A semiconductor memory device having a data input/output pad connected to a data input node includes: an on die termination resistor one end of which is connected to the data input node; and a switch one end of which is connected to the other end of the on die termination resistor for connecting/disconnecting the on die termination resistor with an on die termination voltage.

Abstract: The present invention discloses improved semiconductor device and method for manufacturing wherein one side of a source and drain region and a portion of a channel region are disposed on a buried oxide layer formed on a semiconductor substrate and the side of the source and drain region and another portion of the channel region are disposed on a Si epitaxial layer formed on a semiconductor substrate.

Abstract: An apparatus included in a semiconductor memory device for precharging a bit line and a bit line bar and sensing and amplifying a data delivered to one of the bit line and the bit line bar. A precharge block precharges the bit line and the bit line bar at a ground. A sense amplifying block senses and amplifies the data by using a low voltage having a lower voltage level than the ground and a high voltage having a higher voltage level than a supply voltage.

Abstract: A level shifter for use in a semiconductor device, includes: a first transferring unit for transferring an input signal to an inverted output node in response to a negative voltage; a second transferring unit for supplying a power supply voltage to an output node in response to the input signal; and a third transferring unit coupled to the inverted output node and the output node for supplying the negative voltage to the output node in response to an output of the first transferring unit.

Abstract: Provided is a semiconductor device that can secure a current consumption characteristic and an operating speed characteristic under a low power voltage environment. The semiconductor device is divided into a plurality of regions depending on the current consumption characteristics. Considering the current consumption characteristics of the corresponding regions, the ground voltage or the negative voltage is supplied as the base voltage. For example, in the memory region or the logic region, which exhibits the single transient low current characteristic, the negative voltage is supplied as the base voltage. On the contrary, in the output driver circuit region, the DLL or the PLL, which exhibits the high current characteristics, the ground voltage is supplied as the base voltage. In this case, the operating speed characteristic can be secured even under the low power supply environment without decreasing the threshold voltage of the transistor.

Abstract: A charge trap insulator memory device comprises a plurality of memory cells connected serially, a first switching device, and a second switching device. In the plurality of memory cells, data applied through a bit line depending on potentials applied to a top word line and a bottom word line are stored in a charge trap insulator or the data stored in the charge trap insulator are outputted to the bit line. The first switching element selectively connects the plurality of memory cells to the bit line in response to a first selecting signal. The second switching element selectively connects the plurality of memory cells to a sensing line in response to a second selecting signal.

Abstract: A semiconductor memory device for outputting or storing a data in response to inputted address and command includes a first cell array for outputting the data to one of a bit line and a bit line bar; a first reference cell block for outputting a reference signal to the other of the bit line and the bit line bar; a sense amplifying block for sensing and amplifying a voltage difference between the bit line and the bit line bar; a first connection block for connecting or disconnecting the first cell array and the first reference cell block to the sense amplifying block; and a floating control block for floating the bit line and the bit line bar if a precharge command signal is activated.