Abstract: A semiconductor device includes tunneling insulating layers on active regions of a substrate, floating gate electrodes on the tunneling insulating layers, an isolation trench within the substrate and the isolation trench defines the active region, spaces the tunneling insulating layers, and isolates the floating gate electrodes. A bottom of the isolation trench is directly in contact with the substrate. The semiconductor device further includes a lower insulating layer on the floating gate electrodes, and a middle insulating layer, an upper insulating layer, and a control gate electrode stacked on the lower insulating layer. The lower insulating layer is configured to hermetically seal a top portion of the isolation trench to define and directly abut an air gap within the isolation trench.

Abstract: A method of distributing group identifiers IDs (GIDs) in a power line communication (PLC) network, a method of receiving the GIDs, an authentication apparatus, and a PLC apparatus are provided. The authentication apparatus includes: an authentication mode storing unit which stores an authentication mode having a value including one of an authentication authorized mode and an authentication unauthorized mode; a GID request receiver which receives a GID request message from a PLC apparatus; and a GID transmitter which, if the authentication mode is the authentication authorized mode, transmits a GID corresponding to the PLC apparatus to the PLC apparatus. Authentication is realized in a PLC media access control layer distributing the GIDs between a PLC apparatus and an authentication apparatus, so manually inputting a GID into the PLC apparatus is not necessary. Further, the GIDs are distributed via the authentication apparatus, thereby centrally managing the GIDs.

Abstract: Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.

Abstract: A method and apparatus to efficiently transmit data. The method and apparatus effectively aggregate data and transmit the data in a high-speed power line communication (PLC) network. The method of transmitting the data includes combining each of at least one or more data units transferred from an upper layer, with a field to indicate attribute information of the data unit, dividing the combined data units and fields into frame blocks of an identical size, and aggregating the divided frame blocks and transferring the aggregated frame blocks as one frame to a PHY layer. In this way, data units of a variety of types and sizes transferred from the upper layer are aggregated and transmitted as the one frame.

Abstract: The present invention provides an insulated wire having a conductor and at least two insulating coating layers formed surrounding the conductor, wherein the insulating coating layers comprises the outermost layer thereof, which has a thickness in the range of 20 to 50% based on the total thickness of the insulating coating layers and comprises a polyimide resin; and a base insulating coating layer in contact with the conductor, which has a thickness in a range of 50 to 80% based on the total thickness of the insulating coating layers and comprises a polyamide-imide resin having an adhesion-improving agent. The insulated wire of the present invention has insulating coating layers having superior coating adhesion as well as good heat-resistance.

Abstract: A gate pattern is disclosed that includes a semiconductor substrate, a lower conductive pattern, an upper conductive pattern, and a sidewall conductive pattern. The lower conductive pattern is on the substrate. The insulating pattern is on the lower conductive pattern. The upper conductive pattern is on the insulating pattern opposite to the lower conductive pattern. The sidewall conductive pattern is on at least a portion of sidewalls of the upper conductive pattern and the lower conductive pattern. The sidewall conductive pattern electrically connects the upper conductive pattern and the lower conductive pattern. An upper edge portion of the lower conductive pattern may be recessed relative to a lower edge portion of the lower conductive pattern to define a ledge thereon. The sidewall conductive pattern may be directly on the ledge and sidewall of the recessed upper edge portion of the lower conductive pattern.

Abstract: A semiconductor device includes tunneling insulating layers on active regions of a substrate, floating gate electrodes on the tunneling insulating layers, an isolation trench within the substrate and the isolation trench defines the active region, spaces the tunneling insulating layers, and isolates the floating gate electrodes. A bottom of the isolation trench is directly in contact with the substrate. The semiconductor device further includes a lower insulating layer on the floating gate electrodes, and a middle insulating layer, an upper insulating layer, and a control gate electrode stacked on the lower insulating layer. The lower insulating layer is configured to hermetically seal a top portion of the isolation trench to define and directly abut an air gap within the isolation trench.

Abstract: A wiring structure includes a first plug extending through a first insulating interlayer on a substrate, a first wiring extending through a second insulating interlayer on the first insulating interlayer and the first wiring is electrically connected to the first plug, a diffusion barrier layer pattern on the first wiring and on the second insulating interlayer, a portion of the second insulating interlayer being free of being covered by the diffusion barrier layer pattern, a second plug extending through the diffusion barrier layer pattern, the second plug is in contact with the first wiring, and a second wiring electrically connected to the second plug.

Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

Abstract: A method of transmitting data more effectively, and more particularly, a method of classifying service traffic, transmitting data according to the classifications of the service traffic, and performing a contention free slot (CFS) allocation in order to transmit data in a power line communication (PLC) network, and an apparatus to do the same. The data transmission method includes determining transmission priority of data according to service traffic characteristics, and transmitting data according to the determined transmission priority, thereby providing differentiated quality of service (QoS) according to service traffic characteristics.

Abstract: Provided is a wideband receiver that has a smaller area and consumes less power and can prevent harmonic mixing occurring due to an increase in the number of communications systems using wideband. A wideband receiver according to an aspect of the invention may include: an front-end unit receiving and performing low-pass filtering on a wideband input signal in a continuous-time domain; and a down-conversion unit sampling and holding an output signal of the front-end unit according to a local oscillator signal and performing low-pass filtering on the output signal in a discrete tie domain.

Abstract: A method is provided for controlling a device by a portable terminal in a device automation system. Upon detecting an execution request for a single remote control mode for remotely controlling a device, the portable terminal sends a single remote control mode execution request message for requesting to execute the single remote control mode, to the device. Upon receiving from the device a single remote control mode execution response message being responsive to the single remote control mode execution request message, the portable terminal switches an operation mode thereof to the single remote control mode. Upon receiving from the device a device data message including device data output by the device, the portable terminal outputs the device data. Upon detecting a remote control command to remotely control the device while outputting the device data, the portable terminal sends a remote control message including the remote control command to the device.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: Disclosed is an insulating varnish composition including polyamideimide resin and 1 to 40 parts by weight of surface-treated silica in a sol state per 100 parts by weight of the polyamideimide resin. An insulated layer formed using the insulating varnish composition may have excellent corona discharge resistance, thereby preventing the insulation breakdown.

Abstract: Disclosed is an insulating varnish composition including an organo silica sol containing a silica covered with a dispersant in a solvent containing N-methyl-2-pyrrolidone (NMP) as a main component and a polyamidimide resin dispersed in a solvent containing NMP as a main component. An insulated layer formed from the insulating varnish composition containing inorganic insulating particles of silica uniformly dispersed therein may have excellent corona discharge resistance, thereby preventing the insulation breakdown.

Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

Abstract: An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.

Abstract: A method of manufacturing a wiring structure and a semiconductor device, the method of manufacturing a wiring structure including forming a first insulating interlayer on a substrate; forming a contact plug in an opening in the first insulating interlayer; forming a second insulating interlayer on the contact plug and the first insulating interlayer; removing a portion of the second insulating interlayer to form an opening therethrough such that the opening exposes the contact plug; filling a portion of the opening to form a wiring such that the wiring is electrically connected to the contact plug; and forming a diffusion barrier layer pattern on the wiring such that the diffusion barrier layer pattern fills a remaining portion of the opening.

Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED).