Abstract: A system and method for blocking heat from reaching an image sensor in a three dimensional stack with a semiconductor device. In an embodiment a heat sink is formed in a back end of line process either on the semiconductor device or else on the image sensor itself when the image sensor is in a backside illuminated configuration. The heat sink may be a grid in either a single layer or in two layers, a zig-zag pattern, or in an interleaved fingers configuration.

Abstract: Methods for forming image sensor structures are provided. The method includes forming an isolation structure in a substrate and forming a first light sensing region and a second light sensing region. The method further includes forming a first gate structure and a second gate structure, and the first gate structure and the second gate structure are positioned at a front side of the substrate. The method further includes forming a first source/drain structure adjacent to the first gate structure and a second source/drain structure adjacent to the second gate structure and forming an interlayer dielectric layer over the front side of the substrate. The method further includes forming a contact trench through the interlayer dielectric layer and forming a contact in the contact trench.

Abstract: A composite connector comprises a housing, a position-limiting structure, a first type terminal, and a second type terminal. The housing is disposed on a system board, and a first oblique slot is disposed on one sidewall of the housing. The position-limiting structure is movably disposed in the housing, and the position-limiting structure and the sidewall of the housing have one of and the other of a first moving structure and the first oblique slot, respectively. The first type terminal and the second type terminal are disposed at different depths of the housing. Thereby, the space utilization of the system board is enhanced, the advantage of reducing the volume of the electronic product is achieved, and the switching operation can be more stable and less easy to fail when the connecting interfaces are switched.

Abstract: A pull-out aiding device is configured for mounting on an object, in which a corresponding apparatus is mounted. The pull-out aiding device includes a pulling member and a handle member. The pulling member includes a first pivot section and an abutting section for abutting against the corresponding apparatus to move the latter forward. The handle member includes a second pivot section and an operating section. The second pivot section is pivotally connected to the first pivot section, such that the handle member is turnable about the second pivot section relative to the pulling member and brings the latter to move forward.

Abstract: A pixel array structure including a bottom carrier plate, a wire layer, a planarization layer, a pixel unit layer and a conductor structure is provided. The wire layer is disposed on the bottom carrier plate. The planarization layer covers the wire layer and has a flat surface at a side away from the wire layer. The pixel unit layer is disposed on the flat surface of the planarization layer. The pixel unit layer includes a pixel unit including a driving circuit structure and a pixel electrode electrically connected to the driving circuit structure. The conductor structure passes through the planarization layer and is connected between the driving circuit structure and the wire layer. A display panel having the pixel array structure and a method of fabricating the pixel array structure are also provided.

Abstract: A semiconductor device is provided to include a flexible substrate, a barrier layer, a heat insulating layer, a device layer, a dielectric material later and a stress absorbing layer. The barrier layer is disposed on the flexible substrate. The heat insulating layer is disposed on the barrier layer, wherein the heat insulating layer has a thermal conductivity of less than 20 W/mK. The device layer is disposed on the heat insulating layer. The dielectric material layer is disposed on the device layer, and the dielectric material layer and the heat insulating layer include at least one trench. The stress absorbing layer is disposed on the dielectric material layer, and the stress absorbing layer fills into the at least one trench.

Abstract: In one embodiment, a flexible device is provided. The flexible device may include a flexible substrate, a buffer layer, a light reflective layer, and a device layer. The buffer layer is located on the flexible substrate. The light reflective layer is located on the flexible substrate, wherein the light reflective layer has a reflection wavelength of 200 nm˜1100 nm, a reflection ratio of greater than 80%, and a stress direction of the light reflective layer is the same as a stress direction of the flexible substrate. The device layer is located on the light reflective layer and the buffer layer.

Abstract: Methods for reducing core-to-core mismatch are provided. The method includes measuring gate lengths of a representative pattern of each core in a first lot of SOC products by a measurement apparatus. Each of the SOC products in the first lot includes more than two cores identical to each other. The method also includes determining tuning amounts according to the differences between the gate lengths of each core, and adjusting manufacturing conditions for critical dimensions of gate length of each core in a second lot of SOC products respectively according to the tuning amounts for reducing core-to-core mismatch due to the surrounding environment of each core. Each of the SOC products in the second lot includes more than two cores identical to each other and also identical to the cores in the first lot.

Abstract: A fixing assembly and a fastener structure thereof are introduced. The fastener structure includes an engaging member and a mating member connected together. The fixing assembly includes a fastening member and the fastener structure. The fastening member includes sequentially connected head portion, assembling section and fastening section, while the assembling section is assembled to the engaging member. A method of assembling the fixing assembly is also introduced, according to which the engaging member is first connected to the mating member, the assembling section of the fastening member is then forced through an insertion-hole section of the engaging member to be assembled thereto, and finally, a first inner retaining section of the mating member is movably connected to an outer retaining section of a locating member, which is connected to a workpiece. Therefore, the fixing assembly and the fastener structure thereof have a simple structure and can be easily completed.

Abstract: An active pixel sensor (APS) with a vertical transfer gate and a pixel transistor (e.g., a transfer transistor, a source follower transistor, a reset transistor, or a row select transistor) electrically isolated by an implant isolation region is provided. A semiconductor substrate has a photodetector buried therein. The vertical transfer gate extends into the semiconductor substrate with a channel region in electrical communication with the photodetector. The pixel transistor is arranged over the photodetector and configured to facilitate the pixel operation (e.g., reset, signal readout, etc.). The implant isolation region is arranged in the semiconductor substrate and surrounds and electrically isolates the pixel transistor. A method for manufacturing the APS is also provided.

Abstract: A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate with a gate stack formed on the semiconductor substrate. The method also includes forming a protection layer doped with a quadrivalent element to cover a first doped region formed in the semiconductor substrate and adjacent to the gate stack. The method further includes forming a main spacer layer on a sidewall of the gate stack to cover the protection layer and forming an insulating layer over the protection layer. In addition, the method includes forming an opening in the insulating layer to expose a second doped region formed in the semiconductor substrate and forming one contact in the opening.

Abstract: An image sensor structure is provided. The image sensor structure includes a substrate including a first light sensing region and a second light sensing region. The image sensor structure further includes an isolation structure formed through the substrate to separate the first light sensing region and the second light sensing region and a first source/drain structure and a second source/drain structure formed at a front side of the substrate. In addition, the first source/drain structure and the second source/drain structure are located at opposite sides of the isolation structure. The image sensor structure further includes a contact formed over the isolation structure, a portion of the first source/drain structure, and a portion of the second source/drain structure.

Abstract: A robot arm with an image capturing function includes a body, a capture control device, a controller, and a display. When the robot arm is in an operation mode, the controller automatically controls the body to move a movable portion at one terminal of the body to move an eye in hand device disposed on the movable portion to capture images and search for objects. When the robot arm is in a manual mode, the movable portion is moved manually, and the capture control device next to the eye in hand device is controller manually to activate the eye in hand device to capture images and generate image files of predetermined objects, thereby simplifying the operation process of robot arm.

Abstract: The present disclosure relates to a CMOS image sensor having a doped region, arranged between deep trench isolation structures and an image sensing element, and an associated method of formation. In some embodiments, the CMOS image sensor has a pixel region disposed within a semiconductor substrate. The pixel region has an image sensing element configured to convert radiation into an electric signal. A plurality of back-side deep trench isolation (BDTI) structures extend into the semiconductor substrate on opposing sides of the pixel region. A doped region is laterally arranged between the BDTI structures and separates the image sensing element from the BDTI structures and the back-side of the semiconductor substrate. Separating the image sensing element from the BDTI structures prevents the image sensing element from interacting with interface defects near edges of the BDTI structures, and thereby reduces dark current and white pixel number.

Abstract: A multisecuring component includes a penetrating securing body penetratingly secured to a third object and having an abutting protruding portion for abutting against the third object; and a first securing portion disposed on a side of the penetrating securing body to secure a first object, or a second securing portion disposed on another side of the penetrating securing body to secure a second object. Therefore, the multisecuring component secures multiple objects easily.

Abstract: An image sensor structure is provided. The image sensor structure includes a substrate including a first light sensing region and a second light sensing region. The image sensor structure further includes an isolation structure formed through the substrate to separate the first light sensing region and the second light sensing region and a first source/drain structure and a second source/drain structure formed at a front side of the substrate. In addition, the first source/drain structure and the second source/drain structure are located at opposite sides of the isolation structure. The image sensor structure further includes a contact formed over the isolation structure, a portion of the first source/drain structure, and a portion of the second source/drain structure.

Abstract: A flexible electronic device including a first flexible substrate, an electronic component, and a control device is provided. The electronic component includes a conductive layer. The control device includes at least one integrated circuit and a circuit layer set. The circuit layer set includes a plurality of circuit layers and at least one first dielectric layer, and at least a portion of the first dielectric layer is interposed between two adjacent circuit layers. The integrated circuit is electrically connected to the electronic component through the circuit layer set and the conductive layer. At least a portion of the conductive layer and at least a portion of one circuit layer are integrally formed, and the conductive layer and the circuit layer are both disposed on the first flexible substrate. A fabricating method of a flexible electronic device is also provided.

Abstract: A resilient fastener couples to a first object and fastened to a second object, including a body portion coupled to the first object and having a mounting portion; a resilient fastening portion integrally or compositely formed at the body portion and protruded from the body portion to get fastened to the second object; and an elastic portion disposed at the mounting portion and adapted to exert an elastic force on the resilient fastening portion pushed resiliently by the elastic portion when the resilient fastening portion is compressed. Accordingly, the resilient fastener penetrates the second object with the body portion such that the resilient fastening portion is quickly fastened to the second object.

Abstract: A lateral positioning device coupled to a first object to laterally engage or interfere with a second object. The lateral positioning device includes a body portion and positioning element. The body portion is coupled to the first object in a first direction and has a through hole which has therein a limiting portion and extends in a second direction, with an angle formed between the first and second directions. The positioning element is penetratingly disposed in the through hole and limited by the limiting portion to thereby move in the second direction. The positioning element has an engaging portion disposed on the first side of the limiting portion to allow the engaging portion to engage with the second object; a stopping portion disposed on the second side of the limiting portion; and a neck portion connecting with the engaging and stopping portions and passing through the limiting portion.

Abstract: A soldering fastening element, a structure thereof and a method for soldering the soldering fastening element to a circuit board are introduced. The soldering fastening element is soldered to a first circuit board so as for a second board to be coupled thereto. The soldering fastening element includes a body soldered to the first circuit board, a head for fastening the second board in place, and a neck which connects the body and the head. When in use, the soldering fastening element is contained in a carrier, taken out of the carrier with an automated tool, transferred to the first circuit board, and heated through a solder layer on the first circuit board such that the body gets soldered to the first circuit board to form a module member. Therefore, the second board gets coupled to the first circuit board through the head and neck.