Abstract: A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.

Abstract: A semiconductor device is disclosed. A semiconductor device according to an example of the present disclosure includes a gate electrode of a ring shape having an opening area on a substrate; a P-type deep well region formed in the opening area; a drain region formed on the P-type deep well region; an N-type well region overlapping with the gate electrode; a source region formed in the N-type well region; a bulk tab region formed by being isolated from the source region by a first isolation region; a P-type drift region formed in contact with the N-type well region; and a second isolation region formed near the bulk tab region.

Abstract: A substrate treating apparatus includes a plurality of load ports on which carriers having substrates received therein are placed, a plurality of process chambers that perform processes on the substrates, and a transfer robot that transfers the substrates between the load ports and the process chambers. The transfer robot is movable along a transfer passage having a lengthwise direction formed along a first direction, the load ports and the process chambers are arranged along the first direction on one side and an opposite side of the transfer passage, and the transfer robot transfers the substrates between the carriers placed on the load ports and the process chambers.

Abstract: The inventive concept provides a method for treating a substrate. The method includes removing a film on the substrate by applying a pulsed laser to the rotating substrate, in which thickness of the film to be removed is measured and pulse energy of the pulsed laser is selected based on the measured thickness of the film.

Abstract: A single poly multi time program (MTP) cell includes a second conductivity-type well, a sensing transistor comprising a drain, a sensing gate, and a source, a drain electrode connected to the drain, a source electrode connected to the source; a control gate connected to the sensing gate of the sensing transistor, and a control gate electrode, wherein the sensing transistor, the drain electrode, the source electrode, the control gate, and the control gate electrode are located on the second conductivity-type well.

Abstract: Provided herein may be a semiconductor memory device including a memory cell, a read and write circuit, a current sensing circuit, and control logic. The memory cell array includes a plurality of memory cells. The read and write circuit includes a plurality of page buffers coupled to the plurality of memory cells through a plurality of bit lines, respectively. The current sensing circuit is coupled to the read and write circuit through a plurality of sensing lines. The control logic is configured to control operations of the current sensing circuit and the read and write circuit. At least two page buffers among the plurality of page buffers are coupled to one of the plurality of sensing lines. The control logic controls the read and write circuit to simultaneously perform a current sensing operation for the at least two page buffers.

Abstract: A memory device and a method of operating the same. The memory device may include a memory block including a plurality of pages, and a control logic configured to include at least one register in which a plurality of program algorithms and a plurality of pieces of operation information are stored, select any one of the program algorithms in response to an address of a program target page, among the pages, and perform a program operation on the program target page based on the selected program algorithm and operation information corresponding to the selected program algorithm.

Abstract: A method for treating a substrate includes a first treating operation for treating an edge region of the substrate by irradiating a first laser beam having a first wavelength to the edge region of a rotating substrate, and a second treating operation for treating the edge region by irradiating a second laser beam of a second wavelength to the edge region of the rotating substrate, wherein the first wavelength and the second wavelength are different from each other.

Abstract: Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a space in which a substrate is treated, a support unit supporting the substrate inside the chamber, a laser unit irradiating laser to an edge region of the substrate, a vision unit capturing the edge region of the substrate to measure an offset value of the substrate, and an adjustment unit adjusting an irradiation location of the laser based on the offset value of the substrate.

Abstract: Disclosed is a method for removing a film from a substrate by irradiating a plurality of unit pulse laser beams to an edge region of the substrate. The method includes a first irradiation operation for irradiating a plurality of unit pulse laser beams onto the substrate while the substrate is rotating, and a second irradiation operation for irradiating a plurality of unit pulse laser beams to regions of the substrate onto which the unit pulse laser beams are not irradiated in the first irradiation operation.

Abstract: A composite material steel sheet comprises: at least one steel sheet, and a resin-impregnated paper composite layer, wherein the resin-impregnated paper composite layer may comprise stacked sheets of paper, and impregnated resin provide adhesion between the sheets of paper in contact with each other.

Abstract: A memory device includes: a memory block, coupled to a plurality of word lines; a peripheral circuit for performing a sensing operation on selected memory cells of the memory block, the select memory cells being coupled to a selected word line of the plurality of word lines; a word line voltage controller for controlling a sensing voltage applied to the selected word line to perform the sensing operation on the selected memory cells and configured to control a pass voltage applied to the selected word line and unselected word lines of the plurality of word lines, coupled to the memory block; and a bit line control signal generator for controlling the peripheral circuit to apply a channel precharge voltage to respective bit lines, coupled to the selected memory cells, while the pass voltage is being applied to the selected word line and the unselected word lines.

Abstract: Provided herein are a page buffer, a memory device having the page buffer, and a method of operating the memory device. The memory device includes a voltage generator configured to generate operating voltages for operating a plurality of memory cells, a program and verify circuit configured to apply the operating voltages to word lines and bit lines coupled to the memory cells and to perform a program operation and a verify operation, and a program operation controller configured to control the program and verify circuit and the voltage generator so that a bit line precharge operation is performed and so that, when the bit line precharge operation has been completed, a bit line discharge operation is performed.

Abstract: A semiconductor device includes a soft repair control circuit configured to generate an enable signal, in response to a soft repair control signal, wherein the enable signal is enabled when first and second internal addresses counted in a refresh operation have the same combination as first and second failure addresses, and the semiconductor device also includes a core circuit including first, second, third, and fourth regions each including a plurality of word lines which are activated based on a combination of the first, the second, third, and fourth internal addresses, wherein the core circuit is configured to repair, in response to the enable signal, a word line in which a failure has occurred and which is included in a region selected among the first, second, third, and fourth regions by the third and fourth internal addresses.

Abstract: Provided is a surface-treated metallic material with easy control of glossiness and a manufacturing method therefor, the surface-treated metallic material comprising: a metallic material; and a coating layer which is formed on at least one side of the metallic material and on which an ultraviolet curable coating composition is cured, wherein the coating layer consists of a plurality of protrusions, which have a volume of 3 to 16 pico liters and are arranged at a density of 5 to 610 per 1 mm2 of the metallic material. As such, the surface-treated steel sheet is excellent in adhesion, scratch resistance and corrosion resistance, and has easy control of glossiness.

Abstract: A PVA brush cleaning method includes immersing a PVA brush in a cleaning solution containing an organic matter, thereby removing a siloxane compound in the PVA brush; and applying vibration to the PVA brush, thereby removing impurities in the PVA brush.

Abstract: A semiconductor device includes a substrate including a recess, the recess being positioned below an isolation region and having a side portion including a plurality of stepped portions, a plurality of gate electrodes spaced apart from each other on the substrate, and stacked in a direction perpendicular to an upper surface of the substrate, a channel structure passing between a first set of the plurality of gate electrodes, and the isolation region passing between a second set of the plurality of gate electrodes, the isolation region extending from the upper surface of the substrate and having an inclined lateral surface.

Abstract: An ice storage includes a storage body having a storage space for storing ice and a discharge port for discharging ice to the outside, a transferring and breaking part which, by having at least a part thereof provided in the storage space, transfers the ice in the storage space to the discharge port, and if necessary, breaks the transferred ice, and a door part allowing the ice to be discharged through the discharge port as unbroken ice or broken ice unbroken or broken up by the transferring and breaking part. The transferring and breaking part includes a transferring member for transferring ice and a breaking member for breaking ice, and the transferring member and the breaking member are configured such that ice is not stuck therebetween while being transferred.

Abstract: The present disclosure relates to a polyarylene sulfide resin composition for an automobile headlamp component, a method for producing the same, and an automobile headlamp component manufactured using the same. The polyarylene sulfide resin composition includes: about 45 wt % to about 75 wt % of a polyarylene sulfide resin containing about 300 ppm or less of chlorine; about 24.5 wt % to about 55 wt % of an inorganic filler; about 0.1 wt % to about 1 wt % of a nucleating agent; about 0.05 wt % to about 1 wt % of metal powder; and about 0.1 wt % to about 2.5 wt % of a composite metal hydroxide.

Abstract: Provided is a coating composition having excellent corrosion resistance and fingerprint resistance, and also provides a stainless steel sheet having etching patterns and a manufacturing method therefor, the stainless steel sheet comprising: a stainless steel sheet; a coating layer, which is formed on the stainless steel sheet and is a cured product of the coating composition; and a quenching coated film layer formed on the coating layer and having a quenching effect, wherein: the coating layer, formed by curing the coating composition having excellent corrosion resistance and fingerprint resistance, is transparent and has high gloss, thereby having an effect of enabling the surface characteristics of the stainless steel sheet to be expressed as they are; the stainless steel sheet having etching patterns has excellent corrosion resistance and fingerprint resistance even on the parts thereof on which the etching patterns are not formed.