Patents by Inventor Junya Maruyama

Junya Maruyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of light emitting device and manufacturing device thereof
    Patent number: 7569859
    Abstract: It is an object of the present invention to provide a light emitting device having a structure wherein oxygen and moisture are prevented from reaching to the light emitting device, and to provide a manufacturing method thereof. It is another object of the present invention to seal a light emitting device in fewer steps without encapsulating a desiccant. The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.
    Type: Grant
    Filed: January 29, 2007
    Date of Patent: August 4, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junya Maruyama, Toru Takayama, Yumiko Ohno
  • Semiconductor device and method for manufacturing the same
    Patent number: 7564139
    Abstract: It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
    Type: Grant
    Filed: November 30, 2007
    Date of Patent: July 21, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideaki Kuwabara, Junya Maruyama, Yumiko Ohno, Toru Takayama, Yuugo Goto, Etsuko Arakawa, Shunpei Yamazaki
  • Semiconductor device and method of manufacturing the same
    Patent number: 7554169
    Abstract: It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially laminating a plurality of films to be peeled which are once separately formed over a plastic film or the like. Moreover, reliable contact having high degree of freedom is realized by forming each layer having a connection face of a conductive material and by patterning with the use of a photomask having the same pattern.
    Type: Grant
    Filed: April 18, 2005
    Date of Patent: June 30, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Aya Anzai, Junya Maruyama
  • Semiconductor Apparatus and Fabrication Method of the Same
    Publication number: 20090152539
    Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.
    Type: Application
    Filed: February 13, 2009
    Publication date: June 18, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
  • Semiconductor device and manufacturing method thereof
    Patent number: 7547612
    Abstract: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
    Type: Grant
    Filed: March 5, 2007
    Date of Patent: June 16, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
  • Semiconductor device, method of manufacturing the same, and method of designing the same
    Patent number: 7541228
    Abstract: An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device.
    Type: Grant
    Filed: January 4, 2008
    Date of Patent: June 2, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kiyoshi Kato, Toshihiko Saito, Atsuo Isobe, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno
  • SEMICONDUCTOR DEVICE HAVING LIGHT EMITTING ELEMENT, INTEGRATED CIRCUIT AND ADHESIVE LAYER (AS AMENDED)
    Publication number: 20090127556
    Abstract: To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.
    Type: Application
    Filed: November 7, 2008
    Publication date: May 21, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toru Takayama, Junya Maruyama, Yumiko Ohno
  • Method for manufacturing a semiconductor device
    Patent number: 7534702
    Abstract: An efficient mass-production method of very small devices that can receive or transmit data in touch, preferably, out of touch is provided by forming an integrated circuit made of a thin film over a large glass substrate and transferring the integrated circuit to another backing to be divided. Especially, the integrated circuit made of a thin film is difficult to use since there is a threat that the integrated circuit is scattered in the handling of the integrated circuit since the integrated circuit is extremely thin. According to the present invention, multiple openings reaching a peel layer are provided, a material body having a pattern shape that does not cover regions (the openings and a device portion) is provided, and then, a gas or liquid containing fluorine halide is introduced to partially remove the peel layer.
    Type: Grant
    Filed: June 21, 2005
    Date of Patent: May 19, 2009
    Inventors: Tatsuya Arao, Yoshitaka Dozen, Daiki Yamada, Eiji Sugiyama, Tomoko Tamura, Junya Maruyama, Nozomi Horikoshi, Yuugo Goto
  • Method of fabricating a semiconductor device having a film in contact with a debonded layer
    Patent number: 7534700
    Abstract: A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.
    Type: Grant
    Filed: August 11, 2005
    Date of Patent: May 19, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Mayumi Mizukami
  • Display device and manufacturing method thereof
    Patent number: 7535018
    Abstract: A technique for obtaining light emitting devices manufactured with high yield is provided. The width of a seal pattern (605b) can be kept thin by manufacturing a light emitting device using a second substrate (600a) which has a concave portion (607a) and a concave portion (608a). It therefore becomes possible to make the light emitting device have a narrow frame. In addition, the light emitting device with the narrow frame can be realized by a manufacturing method thereof in which a portion of the second substrate from the concave portion to an edge surface is cut.
    Type: Grant
    Filed: November 17, 2005
    Date of Patent: May 19, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junya Maruyama, Masahiro Takahashi
  • DISPLAY DEVICE HAVING A CURVED SURFACE
    Publication number: 20090124062
    Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
    Type: Application
    Filed: October 28, 2008
    Publication date: May 14, 2009
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masakazu Murakami, Toru Takayama, Junya Maruyama
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20090117681
    Abstract: The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size. In the present invention, higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. According to the present invention, the sensor element that can resist the bending stress can be obtained.
    Type: Application
    Filed: January 6, 2009
    Publication date: May 7, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Junya Maruyama, Toru Takayama, Masafumi Morisue, Ryosuke Watanabe, Eiji Sugiyama, Susumu Okazaki, Kazuo Nishi, Jun Koyama, Takeshi Osada, Takanori Matsuzaki
  • Manufacturing method of semiconductor device
    Patent number: 7521383
    Abstract: A first layer (an insulating layer), a second layer (a metal layer), and a third layer (an insulating layer) are formed over a substrate. Then, a fourth layer including a semiconductor element is formed over the third layer. After applying an organic resin film covering the fourth layer, laser light is irradiated to sections of a rear surface side of the substrate. By irradiating the second layer with laser light, the state of being covered with the organic resin film can be maintained at the same time as forming a space under the organic resin film by ablating (alternatively, evaporating or breaking down) an irradiated region of the second layer, to cause a lift in the film in a periphery thereof.
    Type: Grant
    Filed: June 21, 2006
    Date of Patent: April 21, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masafumi Morisue, Ryosuke Watanabe, Junya Maruyama, Daiki Yamada
  • IC card and booking account system using the IC card
    Patent number: 7518692
    Abstract: It is an object of the present invention to provide a highly sophisticated functional card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. A card comprising a display device and a thin film integrated circuit; wherein driving of the display device is controlled by the thin film integrated circuit; a semiconductor element used for the thin film integrated circuit and the display device is formed by using a polycrystalline semiconductor film; the thin film integrated circuit and the display device are sealed with a resin between a first substrate and a second substrate of the card; and the first substrate and the second substrate are plastic substrates.
    Type: Grant
    Filed: December 19, 2003
    Date of Patent: April 14, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Mai Akiba
  • Semiconductor Device Having a Flexible Printed Circuit
    Publication number: 20090091014
    Abstract: To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 ?m which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel.
    Type: Application
    Filed: October 10, 2008
    Publication date: April 9, 2009
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Yasuyuki Arai, Noriko Shibata
  • Semiconductor chip and method manufacturing the same
    Patent number: 7511380
    Abstract: A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 ?m which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 ?m which is separated from another substrate to the above device formative layer, and, repeating such transferring process.
    Type: Grant
    Filed: May 25, 2006
    Date of Patent: March 31, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
  • MANUFACTURING METHOD OF SUBSTRATE HAVING CONDUCTIVE LAYER AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    Publication number: 20090075476
    Abstract: The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
    Type: Application
    Filed: November 10, 2008
    Publication date: March 19, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Gen FUJII, Masafumi MORISUE, Hironobu SHOJI, Junya MARUYAMA, Kouji DAIRIKI, Tomoyuki AOKI
  • Semiconductor apparatus and fabrication method of the same
    Patent number: 7495256
    Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.
    Type: Grant
    Filed: August 18, 2005
    Date of Patent: February 24, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
  • Semiconductor device having photo sensor element and amplifier circuit
    Patent number: 7495272
    Abstract: The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: February 24, 2009
    Assignee: Semiconductor Energy Labortaory Co., Ltd.
    Inventors: Junya Maruyama, Toru Takayama, Masafumi Morisue, Ryosuke Watanabe, Eiji Sugiyama, Susumu Okazaki, Kazuo Nishi, Jun Koyama, Takeshi Osada, Takanori Matsuzaki
  • Peeling Method and Method of Manufacturing Semiconductor Device
    Publication number: 20090042356
    Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
    Type: Application
    Filed: January 18, 2008
    Publication date: February 12, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toru Takayama, Junya Maruyama, Shunpei Yamazaki