Abstract: Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal are disclosed. An example apparatus includes a clock path configured to receive a clock signal and provide internal clock signals and a command path configured to receive a command and propagate the command through the command path responsive to the internal clock signals and provide an internal command having a timing that reflects a timing of the clock signal. The example apparatus further includes a data clock path configured to receive a data clock signal and provide multiphase clock signals based on the data clock signal and provide a delayed multiphase clock signal, and further includes a clock synchronization circuit configured to receive the delayed multiphase clock signal and latch a logic level of the delayed multiphase clock signal responsive to the internal command.

Abstract: Apparatuses and methods for configurable command and data input circuits for semiconductor memories are described. Example apparatuses include input signal blocks, clock blocking circuits, data input blocks, driver circuits, and data receiver circuits.

Abstract: Apparatuses and methods for configurable command and data input circuits for semiconductor memories are described. Example apparatuses include input signal blocks, clock blocking circuits, data input blocks, driver circuits, and data receiver circuits.

Abstract: Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal are disclosed. An example apparatus includes a clock path configured to receive a clock signal and provide internal clock signals and a command path configured to receive a command and propagate the command through the command path responsive to the internal clock signals and provide an internal command having a timing that reflects a timing of the clock signal. The example apparatus further includes a data clock path configured to receive a data clock signal and provide multiphase clock signals based on the data clock signal and provide a delayed multiphase clock signal, and further includes a clock synchronization circuit configured to receive the delayed multiphase clock signal and latch a logic level of the delayed multiphase clock signal responsive to the internal command.

Abstract: Apparatuses, master-slave detect circuits, memories, and methods are disclosed. One such method includes performing a master detect phase during which a memory unit in a memory group is determined to be a master memory unit, determining at each memory unit its location relative to other memory units, and determining at each memory unit its location in the memory group based on a total number of slave memory units and its location relative to other memory units.

Abstract: Memories containing command decoder, chip enable, and signal truncation circuits are disclosed. One such command decoder circuit may include command decoder logic configured to receive command signals and output a decoded command to an interconnect bus responsive to a chip select signal having an active state. Decoder circuits may also prevent coupling commands to the interconnect bus based on the receipt of chip select signals having inactive states. Chip enable circuits having control logic are configured to receive chip select signals and provide the chip select signals to an interconnect bus responsive to receiving a valid command. Chip enable circuits may also prevent coupling chip select signals to the interconnect bus from chip enable signals based on the receipt of invalid command signals. Signal truncation circuits may be used to shorten and/or shift chip select signals to increase timing margins and improve the reliability of command execution by memories.

Abstract: Methods and apparatuses are disclosed including an apparatus that includes a controller circuit configured to access a first subarray of a memory and to access a second subarray of the memory subsequent to accessing the first subarray but contemporaneous with precharging a portion of the first subarray by a precharge circuit associated with the first subarray.

Abstract: A circuit and method for generating an active output signal in response to detecting N events, which are represented by an event signal. A counter circuit is configured to increment and decrement through a sequence of values in response to the event signal. Detection logic coupled to the counter circuit is configured to detect at least first and second values of the sequence. The detection logic is further configured to generate the active output signal and switch to detecting the second value in response to detecting the first value and generate the active output signal and switch to detecting the first value in response to detecting the second value. The first and second values are separated by N counts.

Abstract: A memory structure that can perform characterization of output data paths without accessing the main memory array includes: a plurality of output data paths; a plurality of registers coupled to the output data paths. The registers include: at least a first pattern register and a second pattern register, for respectively storing a first data pattern and a second data pattern; and at least a first mapping register, for storing a plurality of binary values, wherein each binary value indicates whether the first data pattern or the second data pattern should be mapped to a corresponding output data path.

Abstract: Locked state detection circuits, devices, systems, and methods for detecting a locked or synchronized state of a clock synchronization circuit are described. Detection of a locked state includes a circuit including a phase detector configured to generate a delay adjustment signal in response to comparison of a forward path signal indicative of an external clock signal and a feedback path signal indicative of an output clock signal. The circuit further includes a trend detector operably coupled to the delay adjustment signal and configured to generate a locked signal indicative of an in-phase steady-state between the external clock signal and the output clock signal.

Abstract: Memories containing command decoder, chip enable, and signal truncation circuits are disclosed. One such command decoder circuit may include command decoder logic configured to receive command signals and output a decoded command to an interconnect bus responsive to a chip select signal having an active state. Decoder circuits may also prevent coupling commands to the interconnect bus based on the receipt of chip select signals having inactive states. Chip enable circuits having control logic are configured to receive chip select signals and provide the chip select signals to an interconnect bus responsive to receiving a valid command. Chip enable circuits may also prevent coupling chip select signals to the interconnect bus from chip enable signals based on the receipt of invalid command signals. Signal truncation circuits may be used to shorten and/or shift chip select signals to increase timing margins and improve the reliability of command execution by memories.

Abstract: A memory structure that can perform characterization of output data paths without accessing the main memory array includes: a plurality of output data paths; a plurality of registers coupled to the output data paths. The registers include: at least a first pattern register and a second pattern register, for respectively storing a first data pattern and a second data pattern; and at least a first mapping register, for storing a plurality of binary values, wherein each binary value indicates whether the first data pattern or the second data pattern should be mapped to a corresponding output data path.

Abstract: Apparatuses, master-slave detect circuits, memories, and methods are disclosed. One such method includes performing a master detect phase during which a memory unit in a memory group is determined to be a master memory unit, determining at each memory unit its location relative to other memory units, and determining at each memory unit its location in the memory group based on a total number of slave memory units and its location relative to other memory units.

Abstract: An input-output line sense amplifier configured to drive input data signals over an input-output signal line to an output driver circuit, the input-output line sense amplifier having an output driver stage having a plurality of different programmable output drive capacities to tailor the output drive of the sense amplifier.

Abstract: Memories containing command decoder, chip enable, and signal truncation circuits are disclosed. One such command decoder circuit may include command decoder logic configured to receive command signals and output a decoded command to an interconnect bus responsive to a chip select signal having an active state. Decoder circuits may also prevent coupling commands to the interconnect bus based on the receipt of chip select signals having inactive states. The memory further may include chip enable circuits having control logic configured to receive chip select signals and provide the chip select signals to an interconnect bus responsive to receiving a valid command. Chip enable circuits may also prevent coupling chip select signals to the interconnect bus from chip enable signals based on the receipt of invalid command signals. Signal truncation circuits may be used to shorten and/or shift chip select signals to increase timing margins and improve the reliability of command execution by memories.

Abstract: A clock synchronization system and method avoids output clock jitter at high frequencies and also achieves a smooth phase transition at the boundary of the coarse and fine delays. The system may use a single coarse delay line configured to generate two intermediate clocks from the input reference clock and having a fixed phase difference therebetween. The coarse delay line may have a hierarchical or a non-hierarchical structure. A phase mixer receives these two intermediate clocks and generates the final output clock having a phase between the phases of the intermediate clocks. The coarse shifting in the delay line at high clock frequencies does not affect the phase relationship between the intermediate clocks fed into the phase mixer. The output clock from the phase mixer is time synchronized with the input reference clock and does not exhibit any jitter or noise even at high clock frequency inputs. Because of the rules governing abstracts, this abstract should not be used to construe the claims.

Abstract: Apparatuses, master-slave detect circuits, memories, and methods are disclosed. One such method includes performing a master detect phase during which a memory unit in a memory group is determined to be a master memory unit, determining at each memory unit its location relative to other memory units, and determining at each memory unit its location in the memory group based on a total number of slave memory units and its location relative to other memory units.

Abstract: An input-output line sense amplifier configured to drive input data signals over an input-output signal line to an output driver circuit, the input-output line sense amplifier having an output driver stage having a plurality of different programmable output drive capacities to tailor the output drive of the sense amplifier.

Abstract: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

Abstract: An input-output line sense amplifier configured to drive input data signals over an input-output signal line to an output driver circuit, the input-output line sense amplifier having an output driver stage having a plurality of different programmable output drive capacities to tailor the output drive of the sense amplifier.