Abstract: Provided is a plasma processing apparatus or method in which a procedure containing processing steps of supplying a predetermined amount of processing gas into a processing chamber disposed in a vacuum vessel through a gas supply unit, and processing a wafer placed on a sample table disposed in the processing chamber by generating plasma in the processing chamber using the processing gas supplied on each different condition. The procedure includes a first transition step of adjusting and supplying the rare gas to make a pressure of the rare gas equal to a condition of the processing gas used in the former processing step, and a second transition step of adjusting and supplying the rare gas after the first transition step such that a pressure and a flow rate of the rare gas come to be equal to a condition of the processing gas used in the later processing step.

Abstract: A sample stage which is disposed inside a vacuum processing chamber and on which a wafer to be processed is placed on an upper surface thereof includes a metallic base material, a metallic substrate insulated from the base material below the base material with an insulating member interposed therebetween, and a base which is disposed below the substrate, has a space set to an atmospheric pressure therein, and is connected to the substrate by an opening above the space being covered, the insulating member has a ring-shaped member made of ceramic with a seal member airtightly sealing a part between a space of an inner peripheral side communicating with an outside of the vacuum vessel and set to the atmospheric pressure and an inside of the processing chamber interposed between the base material and an outer peripheral side portion of the substrate, a plurality of temperature sensors installed to penetrate the substrate and inserted into the base material is included, and the base material, the insulating member

Abstract: A car seat includes a first heater, a second heater, and a control unit which controls an output to the first heater and an output to the second heater. The control unit executes a temperature-difference adjustment control, in which the output of the second heater is controlled such that the temperature of the bulging portion heated by the second heater with respect to the temperature of the seating surface portion heated by the first heater is made lower when an ambient temperature is a first temperature than when the ambient temperature is a second temperature which is higher than the first temperature.

Abstract: It has been difficult to manufacture a large-capacity transformer having a laminated iron core structure using an amorphous alloy material easily. A laminated iron core structure includes a laminated iron core configured by aligning a plurality of laminated iron core blocks each configured by laminating iron core materials in a direction different from a lamination direction, a first frame extending along an outer periphery of the laminated iron core and a partition plate arranged between the plurality of laminated iron core blocks.

Abstract: The present invention has the object of providing a metal showerhead lighter than previous, at a low cost. A showerhead 3 furnished with an outer cylinder 31 in which a metal plate is plastically deformed and formed into a cylindrical shape in which the base end portion thereof is left open; and a water conduit member 32 which is inserted from the open end of the base end portion side into the outer cylinder to supply hot or cold water supplied from a hose into outer cylinder 31; whereby a gripping portion 311 for holding outer cylinder 31 by hand is provided on the base end portion of outer cylinder 31, and a spray portion 33 is provided in which multiple spray holes 33b are formed to spray hot or cold water supplied by water conduit member 32 to the front end portion side of outer cylinder 31.

Abstract: A vacuum processing apparatus with excellent processing uniformity and capable of effectively performing routine and non-routine maintenance even when an object to be processed has an increased diameter is provided. In the vacuum processing apparatus having a vacuum transfer chamber, this apparatus comprises a lower vessel having a cylindrical shape, a sample stage unit including a sample stage and a ring-shaped sample stage base having support beams disposed axisymmetric with respect to a central axis of the sample stage, an upper vessel having a cylindrical shape, and a moving mechanism which is fixed to the sample stage base and is capable to move the sample stage unit movable in a vertical direction and in a horizontal direction.

Abstract: In a plasma processing apparatus having a processing chamber, a sample stage, a sample, a dielectric-composed insulating film and an electrode, the sample stage can be divided into an upper member and a lower member, the upper member including the insulating film and an electrode, the apparatus includes a socket which is deployed inside a through hole of the upper member, and which is electrically connected to the electrode, a pin which is brought into contact with the socket by being inserted into the socket, and a seal member which is attached onto the socket in order to implement a hermetic sealing between the upper-member side and the lower-member side inside the through hole, the upper-member side being continuously linked to the decompressed processing chamber, the lower-member side being continuously linked to the substantially-atmospheric-pressure side which is the outside of the processing chamber.

Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.

Abstract: A plasma processing apparatus is provided which includes a processing chamber disposed in a vacuum container, in a decompressed inside of which plasma is formed, a sample stage disposed in a lower part of the processing chamber, on a top surface of which a sample is mounted, a dielectric film made of a dielectric that forms a mounting surface on which the sample is mounted, and electrodes arranged inside the dielectric film and supplied with power for chucking and holding the sample onto the dielectric film, and when the sample is mounted on the sample stage, the sample is kept mounted on the sample stage until a sample temperature becomes a predetermined temperature or until a predetermined time elapses, and power is then supplied to the electrodes to chuck the sample to the sample stage and then start processing on the sample using the plasma.

Abstract: A plasma processing apparatus, comprising a processing chamber within a vacuum chamber, and a sample stage arranged within the processing chamber with a sample to be processed placed on its top surface, wherein plasma is formed in the processing chamber to perform processing of the sample, wherein the sample stage is provided with an electrostatic chuck which is provided with film electrodes to which power for attraction of the sample is supplied, and upper and lower plate-like sintered bodies joined mutually with the electrodes interposed between them from above and below, and the lower sintered body has a dielectric constant higher than that of the upper sintered body.

Abstract: A vacuum processing apparatus that can excellently perform uniform processing and can efficiently perform regular maintenance and occasional maintenance even in the case where the diameter of a workpiece is increased. A vacuum processing apparatus having a vacuum transport chamber includes: a lower container in a cylindrical shape; a sample stage unit including a sample stage and a ring-shaped sample stage base having a support beam disposed in axial symmetry with respect to the center axis of the sample stage; an upper container in a cylindrical shape; and a moving unit that is fixed to the sample stage base and moves the sample stage unit in the vertical direction and in the horizontal direction.

Abstract: A plasma processing apparatus includes processing units, each of which subjects a sample to processing inside a processing chamber in a vacuum vessel, vacuum transfer chambers which are coupled to the processing units and each have an interior where a sample is transferred under reduced pressure, an intermediate chamber which has, in an interior, a space where a transferred sample is housed, a buffer chamber which is capable of housing a sample arranged in an interior of the vessel, a mounting table which is arranged in the buffer chamber and is adjusted to a prescribed temperature and on which a sample is placed, an opening through which a sample is taken in or out, and a lid member which opens or hermetically closes the opening, and a sample is transferred between the processing unit and a lock chamber via the buffer chamber.

Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.

Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.