Abstract: A semiconductor package includes an electrical connection structure. The electrical connection structure includes: a first conductive layer; a second conductive layer on the first conductive layer; and a conductive cap between the first conductive layer and the second conductive layer, the conductive cap having a hardness greater than a hardness of the first conductive layer.

Abstract: Provided is a memory device including a first gate, a second gate and an inter-gate dielectric layer. The first gate is buried in a substrate. The second gate includes metal and is disposed on the substrate. The inter-gate dielectric layer is disposed between the first and second gates. The inter-gate dielectric layer comprises a high-k layer having a dielectric constant of greater than about 10.

Abstract: The present invention belongs to the field of processing residual stress, and discloses a method for calculating processing parameters for residual stress control by parameter inversion. This method comprises: (a) extracting a characteristic index reflecting the residual stress distribution characteristic from a residual stress distribution curve; (b) respectively presetting initial values of processing parameters for residual stress control, calculating an initial value of the characteristic index, and drawing curves of the characteristic index over the respective processing parameters to obtain respective fitted curves; (c) respectively establishing a relation formula between respective characteristic index increment of the processing parameters and the fitting curve; and (d) assigning the values and performing inversion calculation to obtain the required processing parameters.

Abstract: A controller area network (CAN) communication system is provided. The CAN communication system comprises: a CAN bus; at least one electronic control unit (ECU) coupled to the CAN bus; a host module coupled to the CAN bus for controlling the operation of the at least one ECU. The host module comprises: a controller; and at least two adapters coupled between the CAN bus and the controller for communication therebetween. The controller is configured to monitor a communication between a first adapter of the at least two adapters and the CAN bus by a second adapter of the at least two adapters when the controller is communicating with the CAN bus through the first adapter, and to switch its communication with the CAN bus from through the first adapter to through the second adapter when a failure of the communication between the first adapter and the CAN bus is determined.

Abstract: A nozzle for producing microparticles includes a nozzle body having an oscillating device and an amplifying portion connected to the oscillating device and located between first and second ends of the nozzle body. A through-hole extends from the first end through the amplifying portion and the second end. A tube assembly is mounted in the through-hole and includes first and second tubes between which a first fluid passageway is defined. A second fluid passageway is defined in the second tube. Two ends of the first tube respectively form a first filling port and a plurality of first outlet ports both of which intercommunicate with the first fluid passageway. Two ends of the second tube respectively form a second filling port and a second outlet port both of which intercommunicate with the second fluid passageway. A formation space is defined between the second outlet port and the first outlet ports.

Abstract: A method of forming a semiconductor structure is disclosed. A substrate having a first area and a second area is provided, wherein a first surface of the first area is lower than a second surface of the second area. A first insulating layer, a first gate, a first dielectric layer and a first dummy gate are sequentially formed on the first surface of the first area. A second dielectric layer and a second dummy gate are formed on the second surface of the second area. An inter-layer dielectric layer is formed around the first gate, the first dummy gate and the second dummy gate. The first dummy gate and the second dummy gate are removed, so as to form a first trench and a second trench in the inter-layer dielectric layer. A second gate and a third gate are filled respectively in the first trench and the second trench.

Abstract: A microparticle forming device is used to form microparticles with uniform particle size and proper roundness, and includes a collection pipe, a fluid nozzle, a reactor and a filter. The collection pipe includes a fluid passage, an aqueous-phase fluid inlet, an oil-phase fluid inlet and a mixed fluid outlet, all of which are communicated with the fluid passage. The oil-phase fluid inlet is located between the aqueous-phase fluid inlet and the mixed fluid outlet. The fluid nozzle has a plurality of oil-phase fluid drop outlets aligned with the oil-phase fluid inlet of the collection pipe. The reactor has a reaction chamber communicated with the mixed fluid outlet of the collection pipe, a mixing member accommodated in the reaction chamber, and a microparticle collection port communicated with the reaction chamber. Two opposite ends of the filter are respectively communicated with the reaction chamber of the reactor.

Abstract: A microcarrier forming apparatus includes a tank having an inner periphery. A plurality of spoilers is disposed on the inner periphery of the tank. A spray generator includes a spraying end facing an interior of the tank. A stirrer includes a shaft and a fluid driving member. The shaft includes a central axis inclined from a horizontal plane. The fluid driving member is coupled to the shaft and is disposed in the interior of the tank.

Abstract: A water-phase composition for producing microparticles includes a water-phase fluid, an amphiphilic polymer stabilizing agent, a water-phase surfactant, and an organic solvent. The amphiphilic polymer stabilizing agent can be polyvinyl alcohol. The water-phase surfactant can be polysorbate 20, polysorbate 80, poloxamer 188, or sodium dodecyl sulfate. The water-phase surfactant can be ethyl acetate, dichloromethane, chloroform, or dimethyl sulfoxide.

Abstract: A nozzle for producing microparticles includes a nozzle body having a first end and a second end opposite to the first end. The nozzle body further includes a through-hole extending from the first end through the second end. A fluid passageway is defined in the through-hole and forms a filling port in the first end of the nozzle body and a plurality of outlet ports in the second end of the nozzle body. The nozzle body further includes an oscillating device and an amplifying portion. The oscillating device is connected to the amplifying portion. The amplifying portion surrounds the fluid passageway and is located adjacent to the second end of the nozzle body.

Abstract: A semiconductor structure includes a first dielectric layer, a first conductive via, a partial landing pad, a second dielectric layer, and a second conductive via. The first conductive via is disposed in the first dielectric layer. The partial landing pad is disposed on the first conductive via and the first dielectric layer, in which the partial landing pad has a top surface and a bottom surface, and the top surface of the partial landing pad has a width greater than or substantially equal to that of the bottom surface of the partial landing pad. The second dielectric layer is disposed on the partial landing pad. The second conductive via is disposed in the second dielectric layer and electrically connected to the partial landing pad.

Abstract: A low dielectric polyimide composition comprises an aliphatic anhydride, a long chain diamine, and an ester diamine. A polyimide made of such low dielectric polyimide composition has low polarizability group, thus the dielectric constant of the polyimide is lower. A polyimide made of the low dielectric polyimide composition, a polyimide film using the polyimide, and a copper clad laminate using the polyimide film are also provided.

Abstract: A telescopic ratchet wrench assembly includes a first rod and a second rod. The first rod includes a first end having a first ratchet head. The first rod includes an insertion hole with an opening in a second end of the first rod. A positioning device is mounted in the insertion hole adjacent to the opening. The second rod includes an insertion section insertable into the insertion hole. A coupling section is pivotably connected to an end of the insertion section about a pivotal axis. The first rod and the second rod are coupled with each other to form a telescopic rod positionable by the positioning device. The second rod is movable to a pivotal position in which the pivotal axis is located outside of the first rod. The insertion section of the second rod in the pivotal position is pivotable relative to the coupling section about the pivotal axis.

Abstract: A durable LED light engine includes a printed circuit board including LEDs mounted thereon positioned between a substantially U-shaped top enclosure and a bottom enclosure. Once assembled together, the combination of the substantially U-shaped top enclosure, the printed circuit board and the bottom enclosure are held together with a molding material.

Abstract: An electrical connector for network cables includes a shell internally defining a first and a second insertion space communicable with each other via passages; conducting elements respectively including a conducting section seated in one passage and a first and a second contacting section extended from two opposite ends of the conducting section to extend into the first and the second insertion space, respectively; and a first and a second locating member mounted in the first and the second insertion space, respectively. The first and second locating members include a plurality of first and second guide slots, respectively, for receiving a partial length of the first and second contacting sections, respectively, such that the first and second contacting sections being pushed by inserted network cables are limited to move vertically in the first and second guide slots and accordingly firmly hold front ends of the network cables in the electrical connector.

Abstract: The subcellular localization of mRNA, and small RNA movement and trafficking of these molecules in an organism are important components of cellular and organismal regulation and communication. The next frontier for analysis of RNA will involve analysis at a single-molecule level, and at the subcellular level. This invention relates to methods and materials for sensitive detection of target molecules, particularly to methods and materials for binding or otherwise associating with target molecules and producing a signal for detection of, for example, spatial and/or temporal localization, and more particularly to methods and materials for the above using aptamers which bind to a chromophore or otherwise produce fluorescence or other detectable signal. This invention further relates to aptamers which bind to chromophores such as, for example, biliverdin or other related molecules, and also to such molecules which exhibit fluorescence or other detectable signals.

Abstract: The present disclosure relates to a method for manufacturing a semiconductor device. The method includes providing a first electronic component including a first metal contact and a second electronic component including a second metal contact, changing a lattice of the first metal contact, and bonding the first metal contact to the second metal contact under a predetermined pressure and a predetermined temperature.

Abstract: A recharging cable is disclosed, applicable to a smart recharging environment capable of self-detection and self-diagnosis, comprising: a cable; a plug, coupled to the cable, and having at least a power line set, and at least a communication line set, the at least power line set having a power line and a ground line, and the at least communication line set providing real-time communication between the recharging cable and a charging control end and a charged end; an electronic chip, located at one of the cable and the plug, the electronic chip being able to detect real-time information of the material property and device property at the charged end to estimate a real-time impedance information of the cable, and in combination with a historic impedance changes of the cable, to estimate an impedance reflection point of the cable related to ageing.

Abstract: The invention provides a high voltage device, including: an operation layer, formed on a substrate; a body region and a well, formed in the operation layer to connect the top surface, wherein a PN interface is formed between the body region and the well; a gate, formed on the top surface; a drain and a source, the source formed in a portion of the operation layer in the body region, and the drain formed in a portion of the operation layer in the well; a pseudo-gate, formed on the top surface between the gate and the drain; a first resist protection oxide layer, formed on the gate, the well, and the pseudo-gate; a first conductor layer, formed on the first resist protection oxide layer; a second resist protection oxide layer, formed on the pseudo-gate and the well, the second resist protection oxide layer having no contact with the first resist protection oxide layer; and a second conductor layer, formed on the second resist protection oxide layer.

Abstract: A semiconductor structure includes a first dielectric layer, a first conductive via, a partial landing pad, a second dielectric layer, and a second conductive via. The first conductive via is disposed in the first dielectric layer. The partial landing pad is disposed on the first conductive via and the first dielectric layer, in which the partial landing pad has a top surface and a bottom surface, and the top surface of the partial landing pad has a width greater than or substantially equal to that of the bottom surface of the partial landing pad. The second dielectric layer is disposed on the partial landing pad. The second conductive via is disposed in the second dielectric layer and electrically connected to the partial landing pad.