Abstract: The present invention provides a high voltage device and a manufacturing method thereof. The high voltage device includes: a semiconductor layer, a drift oxide region, a well, a body region, a gate, at least one sub-gate, a source, and a drain. The drift oxide region is located on a drift region in an operation region. The sub-gate is formed on the drift oxide region right above the drift region. The sub-gate is parallel with the gate. A conductive layer of the gate has a first conductivity type, and a conductive layer of the sub-gate has a second conductivity type or is an intrinsic semiconductor structure.

Abstract: A high voltage device includes: a crystalline silicon layer, a well, a body region, a gate, a source, and a drain. The body region has a P-type conductivity type, and is formed in the well. The gate is located on and in contact with the well. The source and the drain have an N-type conductivity type, and are located below, outside, and at different sides of the gate, and are located in the body region and the well respectively. An inverse region is defined in the body region between the source and the well, to serve as an inverse current channel in an ON operation. The inverse region includes a germanium distribution region which has a germanium atom concentration higher than 1*1013 atoms/cm2. Adrift region is defined in the well, between the body region and the drain, to serve as a drift current channel in an ON operation.

Abstract: A controller area network (CAN) communication system is provided. The CAN communication system comprises: a CAN bus; at least one electronic control unit (ECU) coupled to the CAN bus; a host module coupled to the CAN bus for controlling the operation of the at least one ECU. The host module comprises: a controller; and at least two adapters coupled between the CAN bus and the controller for communication therebetween. The controller is configured to monitor a communication between a first adapter of the at least two adapters and the CAN bus by a second adapter of the at least two adapters when the controller is communicating with the CAN bus through the first adapter, and to switch its communication with the CAN bus from through the first adapter to through the second adapter when a failure of the communication between the first adapter and the CAN bus is determined.

Abstract: The present invention relates to a boroaluminosilicate mineral material, a low temperature co-fired ceramic composite material, a low temperature co-fired ceramic, a composite substrate and preparation methods thereof. A boroaluminosilicate mineral material for a low temperature co-fired ceramic, the boroaluminosilicate mineral material comprises the following components expressed in mass percentages of the following oxides: 0.41%-1.15% of Na2O, 14.15%-23.67% of K2O, 1.17%-4.10% of CaO, 0-2.56% of Al2O3, 13.19%-20.00% of B2O3, and 53.47%-67.17% of SiO2. The aforementioned boroaluminosilicate mineral material is chemically stable; a low temperature co-fired ceramic prepared from it not only has excellent dielectric properties, but also has a low sintering temperature, a low thermal expansion coefficient, and high insulation resistance; it is also well-matched with the LTCC process and can be widely used in the field of LTCC package substrates.

Abstract: A semiconductor package includes an electrical connection structure. The electrical connection structure includes: a first conductive layer; a second conductive layer on the first conductive layer; and a conductive cap between the first conductive layer and the second conductive layer, the conductive cap having a hardness greater than a hardness of the first conductive layer.

Abstract: A low dielectric polyimide composition comprises an aliphatic anhydride, a long chain diamine, and an ester diamine. A polyimide made of such low dielectric polyimide composition has low polarizability group, thus the dielectric constant of the polyimide is lower. A polyimide made of the low dielectric polyimide composition, a polyimide film using the polyimide, and a copper clad laminate using the polyimide film are also provided.

Abstract: The present invention provides a device and a method for measuring overburden of injected gas in cyclic gas injection development of condensate gas reservoir. The device comprises sand packed model and temperature control system. The temperature control system is nested outside the sand packed model. The sand packed model comprises sand pack cell, four gas inlets, four gas outlets, bracket, direction control component, rotating shaft, upper cover, lower cover, fixing bolts, two top pressuring inlets, pressure transmission rods, pressure transfer piston and multiple gas sampling ports. The sand pack cell can be filled with quartz sand of different particle size and composition, and the angle of the whole device is adjusted by the direction control component.

Abstract: A resin composition comprises a modified polyimide compound, an epoxy resin, and a solvent. The modified polyimide compound has a chemical structural formula of the Ar? represents a group selected from a group consisting of phenyl having a chemical structural formula of diphenyl ether having a chemical structural formula of biphenyl having a chemical structural formula of hexafluoro-2,2-diphenylpropane having a chemical structural formula of benzophenone having a chemical structural formula of and diphenyl sulfone having a chemical structural formula of and any combination thereof, the modified polyimide compound has a degree of polymerization n of about 1 to about 50, the epoxy resin and the modified polyimide compound are in a molar ratio of about 0.1:1 to about 1:1. A modified polyimide compound and a polyimide film are also provided.

Abstract: A method of optimizing well spacing for shale gas development is provided. It belongs to the technical field of hydrocarbon reservoir exploration and development. The method comprises: firstly verifying block area based on the explored geological structure; analyzing the connection situation of a shale reservoir, identifying the minimum developing area units; calculating the recoverable reserves of the units, confirming the candidate units; drilling representative shale cores and analyzing related physical properties; calculating seepage field and pressure field using unified multi-field, multi-flow-regime, and multi-scale mathematical models; calculating the effective recoverable area of each well; and arranging wells based on the rule that the interference among wells is not larger than 10%. Considering the fluid-solid coupling effects, the method can define appropriately well spacing for shale gas exploration and enhance effectively the output of shale gas.

Abstract: A microparticle forming device is used to form microparticles with uniform particle size and proper roundness, and includes a collection pipe, a fluid nozzle, a reactor and a filter. The collection pipe includes a fluid passage, an aqueous-phase fluid inlet, an oil-phase fluid inlet and a mixed fluid outlet, all of which communicate with the fluid passage. The oil-phase fluid inlet is located between the aqueous-phase fluid inlet and the mixed fluid outlet. The fluid nozzle has a plurality of oil-phase fluid drop outlets aligned with the oil-phase fluid inlet of the collection pipe. The reactor has a reaction chamber communicating with the mixed fluid outlet of the collection pipe, a mixing member accommodated in the reaction chamber, and a microparticle collection port communicating communicated with the reaction chamber. Two opposite ends of the filter respectively communicate with the reaction chamber of the reactor.

Abstract: There is provided a holographic security element including a substrate; and an array of nano-reflectors configured to form a pattern on the substrate and to generate a holographic image corresponding to the pattern at a predetermined distance from the substrate when irradiated with a predetermined light source. In particular, the array of nano-reflectors is configured to generate the holographic image at the predetermined distance to have a size that is larger than a size of the pattern. There is also provided a method of forming the holographic security element, and an article having one or more holographic security elements incorporated therein.

Abstract: An electrical card connector includes an insulative housing defining a receiving space with a plurality of contacts retained therein with constant pitch thereof. The housing includes a base and a plurality of tongues extending from the base into the receiving space. The contact includes a contact arm extending forwardly into the receiving space, and a soldering leg extending rearwardly out of the base. The tongue includes a plurality of partition bars with corresponding cavities therebetween. The contacts include a plurality of differentia pairs and grounding contacts alternately arranged with each other. The partition bars are located between the neighboring grounding contacts and differential pairs while no partition bar is located within each differential pair.

Abstract: This disclosure provides a method of optimizing well spacing for shale gas development. It belongs to the technical field of hydrocarbon reservoir exploration and development. The method comprises: firstly verifying block area based on the explored geological structure; analyzing the connection situation of a shale reservoir, identifying the minimum developing area units; calculating the recoverable reserves of the units, confirming the candidate units; drilling representative shale cores and analyzing related physical properties; calculating seepage field and pressure field using unified multi-field, multi-flow-regime, and multi-scale mathematical models; calculating the effective recoverable area of each well; and arranging wells based on the rule that the interference among wells is not larger than 10%. Considering the fluid-solid coupling effects, this method can define appropriately well spacing for shale gas exploration and enhance effectively the output of shale gas.

Abstract: The present invention relates to a boroaluminosilicate mineral material, a low temperature co-fired ceramic composite material, a low temperature co-fired ceramic, a composite substrate and preparation methods thereof. A boroaluminosilicate mineral material for a low temperature co-fired ceramic, the boroaluminosilicate mineral material comprises the following components expressed in mass percentages of the following oxides: 0.41%-1.15% of Na2O, 14.15%-23.67% of K2O, 1.17%-4.10% of CaO, 0-2.56% of Al2O3, 13.19%-20.00% of B2O3, and 53.47%-67.17% of SiO2. The aforementioned boroaluminosilicate mineral material is chemically stable; a low temperature co-fired ceramic prepared from it not only has excellent dielectric properties, but also has a low sintering temperature, a low thermal expansion coefficient, and high insulation resistance; it is also well-matched with the LTCC process and can be widely used in the field of LTCC package substrates.

Abstract: A high voltage device includes: a semiconductor layer, a well, a body region, a gate, a source, a drain, and a drift oxide region. The semiconductor layer is formed on a substrate, wherein the semiconductor layer has at least one trench. The well is formed in the semiconductor layer. The body region is formed in the well. The gate is formed on the well, and is in contact with the well. The source and the drain are located below, outside, and at different sides of the gate, in the body region and the well respectively. The drift oxide region is formed on a drift region, wherein a bottom surface of the drift oxide region is higher than a bottom surface of the trench.

Abstract: A high voltage device includes: a crystalline silicon layer, a well, a body region, a gate, a source, and a drain. The body region has a P-type conductivity type, and is formed in the well. The gate is located on and in contact with the well. The source and the drain have an N-type conductivity type, and are located below, outside, and at different sides of the gate, and are located in the body region and the well respectively. An inverse region is defined in the body region between the source and the well, to serve as an inverse current channel in an ON operation. The inverse region includes a germanium distribution region which has a germanium atom concentration higher than 1*1013 atoms/cm2. Adrift region is defined in the well, between the body region and the drain, to serve as a drift current channel in an ON operation.

Abstract: The present invention provides a method of laminating a film for a dye-sensitized cell. First, a composite film is taken by a robotic arm, in which the composite film includes a release layer, a protective layer and a hot glue layer between the release layer and the protective layer, and the release layer is removed by the robotic arm. Then, the hot glue layer is precisely attached to a substrate by a target positioning step. Next, the protective layer is removed by the robotic arm.

Abstract: A resin composition comprises a modified polyimide compound, an epoxy resin, and a solvent. The modified polyimide compound has a chemical structural formula of the Ar? represents a group selected from a group consisting of phenyl having a chemical structural formula of diphenyl ether having a chemical structural formula of biphenyl having a chemical structural formula of hexafluoro-2,2-diphenylpropane having a chemical structural formula of benzophenone having a chemical structural formula of and diphenyl sulfone having a chemical structural formula of and any combination thereof, the modified polyimide compound has a degree of polymerization n of about 1 to about 50, the epoxy resin and the modified polyimide compound are in a molar ratio of about 0.1:1 to about 1:1. A modified polyimide compound and a polyimide film are also provided.

Abstract: A modified liquid crystal polymer has a chemical structural formula of Wherein each of R1, R2, R3, and R4 is selected from at least one of chain alkyl group and chain alkoxy group. The chain alkoxy group is bonded to a phenyl group by an oxygen atom of the chain alkoxy group. A degree of polymerization p and a degree of polymerization q each is a natural number greater than 1. The modified liquid crystal polymer has a melting point of 220 degrees Celsius to 300 degrees Celsius. A polymeric film using the modified liquid crystal polymer and a method for manufacturing the modified liquid crystal polymer are also provided.

Abstract: A resin composition comprises a modified polyimide compound, an epoxy resin, and a solvent. The modified polyimide compound has a chemical structural formula of the Ar? represents a group selected from a group consisting of phenyl having a chemical structural formula of diphenyl ether having a chemical structural formula of biphenyl having a chemical structural formula hexafluoro-2,2-diphenylpropane having a chemical structural formula of benzophenone having a chemical structural formula of and diphenyl sulfone having a chemical structural formula of and any combination thereof, the epoxy resin and the modified polyimide compound are in a molar ratio of about 0.1:1 to about 1:1. A polyimide film and a method for manufacturing the polyimide film using the resin composition are also provided.