Abstract: The disclosure relates to a self-healing omniphobic composition including a self-healing omniphobic polymer with a crosslinked backbone. The crosslinked backbone includes a reaction product between a polyisocyanate, a functionalized omniphobic polymer reactive therewith, a reversible polyfunctional linker including a hindered secondary amino group and/or an aromatic hydroxy group, and one or more polymeric backbone components. The crosslinked backbone includes reversible urea or reversible urethane bonds between the reversible polyfunctional linker and the polyisocyanate, which in turn provide self-healing properties to the omni-phobic composition. The self-healing omniphobic composition has favorable omniphobic properties, for example as characterized by water and/or oil contact and/or sliding angles. The omniphobic composition can be used as a coating on any of a variety of substrates to provide self-healing omniphobic properties to a surface of the substrate.

Abstract: The disclosure relates to a Low Temperature Co-fired Ceramic (LTCC) substrate and a preparation method thereof, and in particular to a dielectric-constant-adjustable LTCC substrate and a preparation method thereof. The LTCC substrate of the disclosure includes the following components: glass, SiO2 and Al2O3, a weight percentage of the SiO2 in the LTCC substrate is 10% to 25%.

Abstract: There is provided a holographic security element including a substrate; and an array of nano-reflectors configured to form a pattern on the substrate and to generate a holographic image corresponding to the pattern at a predetermined distance from the substrate when irradiated with a predetermined light source. In particular, the array of nano-reflectors is configured to generate the holographic image at the predetermined distance to have a size that is larger than a size of the pattern. There is also provided a method of forming the holographic security element, and an article having one or more holographic security elements incorporated therein.

Abstract: An electrical card connector includes an insulative housing defining a receiving space with a plurality of contacts retained therein with constant pitch thereof. The housing includes a base and a plurality of tongues extending from the base into the receiving space. The contact includes a contact arm extending forwardly into the receiving space, and a soldering leg extending rearwardly out of the base. The tongue includes a plurality of partition bars with corresponding cavities therebetween. The contacts include a plurality of differentia pairs and grounding contacts alternately arranged with each other. The partition bars are located between the neighboring grounding contacts and differential pairs while no partition bar is located within each differential pair.

Abstract: An automatic test method for testing functions of a device under test is disclosed. The automatic test method includes the following operations. A sample video is generated based on first sample photos and at least one second sample photo by a processor. The sample video is displayed by the device under test and test photos are generated based on the content of the displayed sample video captured by a camera. The first sample photos are compared with the test photos to generate a display compared result. A display error message or a display pass message is generated based on the display compared result by the processor, configured to indicate that whether a display function of the device under test is dysfunctional.

Abstract: An automatic test device is disclosed. The automatic test device is includes connection ports, a processor, and a transmission integrated interface. The connection ports is configured to couple to a device under test. The processor is coupled to the connection ports and is configured to transmit a test instruction through the connection ports to the device under test. The device under test is in a test mode after receiving the test instruction, and the first processor is configured to receive a test signal transmitted through the connection ports from the device under test when the device under test is in the test mode. The transmission integrated interface is coupled between the connection ports and the processor, and is configured to transmit at least one of the test instructions to the connection ports or the processor. An automatic test system is also disclosed herein.

Abstract: A high voltage device includes: a crystalline silicon layer, a well, a body region, a gate, a source, and a drain. The body region has a P-type conductivity type, and is formed in the well. The gate is located on and in contact with the well. The source and the drain have an N-type conductivity type, and are located below, outside, and at different sides of the gate, and are located in the body region and the well respectively. An inverse region is defined in the body region between the source and the well, to serve as an inverse current channel in an ON operation. The inverse region includes a germanium distribution region which has a germanium atom concentration higher than 1*1013 atoms/cm2. Adrift region is defined in the well, between the body region and the drain, to serve as a drift current channel in an ON operation.

Abstract: The present invention provides a method of laminating a film for a dye-sensitized cell. First, a composite film is taken by a robotic arm, in which the composite film includes a release layer, a protective layer and a hot glue layer between the release layer and the protective layer, and the release layer is removed by the robotic arm. Then, the hot glue layer is precisely attached to a substrate by a target positioning step. Next, the protective layer is removed by the robotic arm.

Abstract: An agent selection component that selects and activates artificial agents for interacting with a user on behalf of various entity based on user interaction with a real environment. The agent selection component detects user interaction with the real environment, and evaluates the detected user interaction. Based on that evaluation, the agent selection component selects an artificial agent that acts for an entity from amongst multiple artificial agents that act for different entities (e.g., to answer questions, to place orders, to schedule, or the like). The agent selection component then causes the selected artificial agent to activate to interact with the entity. Thus, different interactions with a real environment may result in the agent selection component permitting the user to interface with artificial agents for different entities.

Abstract: Compositions containing at least one compound of formula I where R1 is a phenolic compound (e.g., simple phenol, creosote, thymol, or carvacrol), and where R2 is a polyamine (e.g., ethylenediamine (EDA), diethylenetriamine (DETA), triethylenetetramine (TETA), tetraethylenepentamine (TEPA), hexamethylenediamine (HDA)); and optionally a carrier; the compositions may additionally contain at least one epoxy resin. Methods for killing microorganisms involving contacting the microorganisms with an effective microorganism killing amount of the above composition. Compositions containing at least one compound produced by a method involving reacting phenolic-branched chain fatty acid methyl ester with at least one polyamine.

Abstract: The present invention provides a device and a method for measuring overburden of injected gas in cyclic gas injection development of condensate gas reservoir. The device comprises sand packed model and temperature control system. The temperature control system is nested outside the sand packed model. The sand packed model comprises sand pack cell, four gas inlets, four gas outlets, bracket, direction control component, rotating shaft, upper cover, lower cover, fixing bolts, two top pressuring inlets, pressure transmission rods, pressure transfer piston and multiple gas sampling ports. The sand pack cell can be filled with quartz sand of different particle size and composition, and the angle of the whole device is adjusted by the direction control component.

Abstract: The present invention provides a high voltage device and a manufacturing method thereof. The high voltage device includes: a semiconductor layer, a drift oxide region, a well, a body region, a gate, at least one sub-gate, a source, and a drain. The drift oxide region is located on a drift region in an operation region. The sub-gate is formed on the drift oxide region right above the drift region. The sub-gate is parallel with the gate. A conductive layer of the gate has a first conductivity type, and a conductive layer of the sub-gate has a second conductivity type or is an intrinsic semiconductor structure.

Abstract: A high voltage device includes: a crystalline silicon layer, a well, a body region, a gate, a source, and a drain. The body region has a P-type conductivity type, and is formed in the well. The gate is located on and in contact with the well. The source and the drain have an N-type conductivity type, and are located below, outside, and at different sides of the gate, and are located in the body region and the well respectively. An inverse region is defined in the body region between the source and the well, to serve as an inverse current channel in an ON operation. The inverse region includes a germanium distribution region which has a germanium atom concentration higher than 1*1013 atoms/cm2. Adrift region is defined in the well, between the body region and the drain, to serve as a drift current channel in an ON operation.

Abstract: A controller area network (CAN) communication system is provided. The CAN communication system comprises: a CAN bus; at least one electronic control unit (ECU) coupled to the CAN bus; a host module coupled to the CAN bus for controlling the operation of the at least one ECU. The host module comprises: a controller; and at least two adapters coupled between the CAN bus and the controller for communication therebetween. The controller is configured to monitor a communication between a first adapter of the at least two adapters and the CAN bus by a second adapter of the at least two adapters when the controller is communicating with the CAN bus through the first adapter, and to switch its communication with the CAN bus from through the first adapter to through the second adapter when a failure of the communication between the first adapter and the CAN bus is determined.

Abstract: The present invention relates to a boroaluminosilicate mineral material, a low temperature co-fired ceramic composite material, a low temperature co-fired ceramic, a composite substrate and preparation methods thereof. A boroaluminosilicate mineral material for a low temperature co-fired ceramic, the boroaluminosilicate mineral material comprises the following components expressed in mass percentages of the following oxides: 0.41%-1.15% of Na2O, 14.15%-23.67% of K2O, 1.17%-4.10% of CaO, 0-2.56% of Al2O3, 13.19%-20.00% of B2O3, and 53.47%-67.17% of SiO2. The aforementioned boroaluminosilicate mineral material is chemically stable; a low temperature co-fired ceramic prepared from it not only has excellent dielectric properties, but also has a low sintering temperature, a low thermal expansion coefficient, and high insulation resistance; it is also well-matched with the LTCC process and can be widely used in the field of LTCC package substrates.

Abstract: A semiconductor package includes an electrical connection structure. The electrical connection structure includes: a first conductive layer; a second conductive layer on the first conductive layer; and a conductive cap between the first conductive layer and the second conductive layer, the conductive cap having a hardness greater than a hardness of the first conductive layer.

Abstract: A low dielectric polyimide composition comprises an aliphatic anhydride, a long chain diamine, and an ester diamine. A polyimide made of such low dielectric polyimide composition has low polarizability group, thus the dielectric constant of the polyimide is lower. A polyimide made of the low dielectric polyimide composition, a polyimide film using the polyimide, and a copper clad laminate using the polyimide film are also provided.

Abstract: The present invention provides a device and a method for measuring overburden of injected gas in cyclic gas injection development of condensate gas reservoir. The device comprises sand packed model and temperature control system. The temperature control system is nested outside the sand packed model. The sand packed model comprises sand pack cell, four gas inlets, four gas outlets, bracket, direction control component, rotating shaft, upper cover, lower cover, fixing bolts, two top pressuring inlets, pressure transmission rods, pressure transfer piston and multiple gas sampling ports. The sand pack cell can be filled with quartz sand of different particle size and composition, and the angle of the whole device is adjusted by the direction control component.

Abstract: A resin composition comprises a modified polyimide compound, an epoxy resin, and a solvent. The modified polyimide compound has a chemical structural formula of the Ar? represents a group selected from a group consisting of phenyl having a chemical structural formula of diphenyl ether having a chemical structural formula of biphenyl having a chemical structural formula of hexafluoro-2,2-diphenylpropane having a chemical structural formula of benzophenone having a chemical structural formula of and diphenyl sulfone having a chemical structural formula of and any combination thereof, the modified polyimide compound has a degree of polymerization n of about 1 to about 50, the epoxy resin and the modified polyimide compound are in a molar ratio of about 0.1:1 to about 1:1. A modified polyimide compound and a polyimide film are also provided.

Abstract: A microparticle forming device is used to form microparticles with uniform particle size and proper roundness, and includes a collection pipe, a fluid nozzle, a reactor and a filter. The collection pipe includes a fluid passage, an aqueous-phase fluid inlet, an oil-phase fluid inlet and a mixed fluid outlet, all of which communicate with the fluid passage. The oil-phase fluid inlet is located between the aqueous-phase fluid inlet and the mixed fluid outlet. The fluid nozzle has a plurality of oil-phase fluid drop outlets aligned with the oil-phase fluid inlet of the collection pipe. The reactor has a reaction chamber communicating with the mixed fluid outlet of the collection pipe, a mixing member accommodated in the reaction chamber, and a microparticle collection port communicating communicated with the reaction chamber. Two opposite ends of the filter respectively communicate with the reaction chamber of the reactor.