Abstract: A three-dimensional (3D) memory device includes a memory array device, a peripheral device, an etch stop layer, and a backside gate line slit. The memory array device includes a frontside and a backside, a plurality of memory strings, and a plurality of word lines in a staircase structure coupled to the plurality of memory strings. The peripheral device is above the frontside of the memory array device. The etch stop layer is between the memory array device and the peripheral device. The backside gate line slit extends through the backside of the memory array device to the etch stop layer. The backside gate line slit includes a conductive gate line layer and an insulating gate line layer. The 3D memory device can increase manufacturing efficiency, increase yield, reduce thermal stress, reduce fluorine contamination, increase an overlay window, and decrease overlay errors.

Abstract: A memory device includes an array of memory cells disposed on a first side of a first semiconductor layer, and a peripheral circuit bonded to the array of memory cells. Each of the memory cells includes a semiconductor body extending in a first direction, a first terminal and a second terminal are formed at both ends of the semiconductor body; a word line extending in a second direction perpendicular to the first direction; plate lines extending in the second direction; and a first dielectric layer disposed between the semiconductor body and the word line and the plate line.

Abstract: Three-dimensional (3D) memory devices and fabricating methods are disclose. A disclosed 3D memory device can comprises, a first semiconductor structure comprising an array of first type memory cells, a second semiconductor structure comprising an array of second type memory cells different from the first type memory cells, a third semiconductor structure comprising a first peripheral circuit, and a fourth semiconductor structure comprising a second peripheral circuit. The first semiconductor structure, the second semiconductor structure, the third semiconductor structure, and the fourth semiconductor structure are stacked over one another.

Abstract: Three-dimensional (3D) memory devices and fabricating methods are disclose. A disclosed 3D memory device can comprises, a first semiconductor structure comprising an array of first type memory cells, a second semiconductor structure comprising an array of second type memory cells different from the first type memory cells, a third semiconductor structure comprising a first peripheral circuit, and a fourth semiconductor structure comprising a second peripheral circuit. The first semiconductor structure and the second semiconductor structure are sandwiched between the third semiconductor structure and the fourth semiconductor structure in a vertical direction.

Abstract: A memory device includes an array of memory cells disposed on a first side of a first semiconductor layer, and a pad-out structure disposed on the array of memory cells. Each of the memory cells includes a semiconductor body extending in a first direction, a first terminal in contact with the first side of the first semiconductor layer and a second terminal are formed at both ends of the semiconductor body; a word line extending in a second direction perpendicular to the first direction; and a plate line extending in the second direction.

Abstract: A method for forming a 3D memory device is disclosed. A channel structure extending vertically through a dielectric stack including interleaved sacrificial layers and dielectric layers above a substrate is formed. A sacrificial plug above and in contact with the channel structure is formed. A slit opening extending vertically through the dielectric stack is formed. A memory stack including interleaved conductive layers and the dielectric layers is formed by replacing, through the slit opening, the sacrificial layers with the conductive layers. A first contact portion is formed in the slit opening. The sacrificial plug is removed after forming the first contact portion to expose the channel structure. A channel local contact above and in contact with the channel structure, and a second contact portion above the first contact portion in the slit opening are simultaneously formed.

Abstract: A memory device includes a first semiconductor layer, a first memory array, a second memory array, and a first peripheral circuit. The first memory array is disposed on a first side of the first semiconductor layer. The first memory array includes first memory cells, and first split structures. The second memory array is disposed on a second side of the first semiconductor layer opposite to the first side. The second memory array includes second memory cells, and second split structures. The first peripheral circuit including a first peripheral device disposed on the first memory array.

Abstract: A memory device includes a semiconductor layer; a peripheral circuit disposed on the semiconductor layer; and an array of memory cells disposed aside the peripheral circuit on the semiconductor layer. Each of the memory cells includes a semiconductor body extending in a first direction, a first end of the semiconductor body is in contact with the semiconductor layer; a word line gate extending in a second direction perpendicular to the first direction; a plate line gate extending in the second direction; and a dielectric layer disposed between the semiconductor body and the word line gate and the plate line gate.

Abstract: A method, an apparatus, a device, and a storage medium for issuing and replying to multimedia content are provided here. The method described herein for issuing multimedia content comprises: receiving push content associated with a user, the push content being generated based on an the occurrence of a personalized event associated with the user; presenting the push content to the user, the push content comprising video content related to the personalized event; and issuing multimedia content associated with the personalized event based on an operation on the push content by the user, the multimedia content being generated based on the push content. According to the embodiments of the present disclosure, it can effectively help a user to create multimedia content associated with a personalized event, reduce the time cost for the user, and can effectively guide interaction between users, thereby improving user experience.

Abstract: The disclosed technology enables automated parking of an autonomous vehicle. An example method of performing automated parking for a vehicle comprises obtaining, from a plurality of global positioning system (GPS) devices located on or in an autonomous vehicle, a first set of location information that describes locations of multiple points on the autonomous vehicle, where the first set of location information are associated with a first position of the autonomous vehicle, determining, based on the first set of location information and a location of the parking area, a trajectory information that describes a trajectory for the autonomous vehicle to be driven from the first position of the autonomous vehicle to a parking area, and causing the autonomous vehicle to be driven along the trajectory to the parking area by causing operation of one or more devices located in the autonomous vehicle based on at least the trajectory information.

Abstract: A log-structured merge-tree (LSM-Tree) based key-value (KV) data storage method includes writing KV data into a NAND flash memory. The KV data includes a key-value pair including a key and a corresponding value. The KV data is stored in a key-value solid state drive (KVSSD), which includes a storage class memory (SCM) and the NAND flash memory. The method further includes storing metadata of the KV data in the SCM. The metadata of the KV data includes the key and index information of the corresponding value of the KV data, and the index information of the corresponding value of the KV data indicates address information of the KV data in the NAND flash memory.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a plurality of memory blocks in a plan view and at least one stabilization structure extending laterally to separate adjacent ones of the memory blocks in the plan view. Each of the memory blocks includes a memory stack including vertically interleaved conductive layers and first dielectric layers, and a plurality of channel structures each extending vertically through the memory stack. The stabilization structure includes a dielectric stack including vertically interleaved second dielectric layers and the first dielectric layers.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes channel structures in a first region, word line pick-up structures in a second region, and word lines each extending from the first region into at least a portion of the second region. At least one word line pick-up structure includes multiple sections each electrically connected to a different word line.

Abstract: A rapid detection tool for a coaxial relationship based on a photosensitive material and a detection method using the same are used to detect coaxiality of two through-holes in the same workpiece to be detected. An image processing unit and a control unit are mounted outside a light-shielding box. Light sources, cameras, sensors, and an air cylinder are mounted in the light-shielding box. A photosensitive plate coated with a photosensitive resin is placed between the two holes, and two sides are irradiated by the light sources. Coordinates of centers of circular patterns formed on the photosensitive plate are calculated so that a coaxial relationship between the two holes can be accurately obtained. An output rod of the air cylinder is controlled to extend outward to reject a workpiece to be detected not meeting requirements.

Abstract: Techniques are described for determining weight distribution of a vehicle. A method of performing autonomous driving operation includes determining a vehicle weight distribution that values for each axle of the vehicle that describe weight or pressure applied on a respective axle. The values of the vehicle weight distribution are determined by removing at least one value that is outside a range of pre-determined values from a set of sensor values. The method further includes determining a driving-related operation of the vehicle weight distribution. For example, the driving-related operation may include determining a braking amount for each axle and/or determining a maximum steering angle to operate the vehicle. The method further includes controlling one or more subsystems in the vehicle via an instruction related to the driving-related operation. For example, transmitting the instruction to the one or more subsystems causes the vehicle to perform the driving-related operation.

Abstract: Embodiments described herein provide a causality-based anomaly detection mechanism that formulates multivariate time series as instances that do not follow the regular causal mechanism. Specifically, the causality-based anomaly detection mechanism leverages the causal structure discovered from data so that the joint distribution of multivariate time series is factorized into simpler modules where each module corresponds to a local causal mechanism, reflected by the corresponding conditional distribution. Those local mechanisms are modular or autonomous and can then be handled separately. In light of this modularity property, the anomaly detection problem then naturally decomposed into a series of low-dimensional anomaly detection problems. Each sub-problem is concerned with a local mechanism.

Abstract: A 3D memory device includes a conductor/insulator stack containing a conductive layer and a dielectric layer alternatingly stacked, channel hole structures in a first region of memory cells in the conductor/insulator stack, a blocking structure adjacent to the first region, and a dummy channel hole structure in the first region. The dummy channel hole structure is adjacent to the blocking structure, and includes a dielectric material that fills a channel hole to form a first dielectric filling structure.

Abstract: The present disclosure discloses a recombinant varicella-zoster virus (VZV) vaccine, including a fusion protein formed by an amino acid sequence of an extracellular domain of a recombinant glycoprotein gE of a live attenuated VZV strain (OKA strain) gene and an Fc fragment of human immunoglobulin. The present disclosure further provides preparation and use of the fusion protein, a corresponding recombinant gene, a eukaryotic expression vector, etc. The fusion protein of the present disclosure has prominent immunogenicity and can induce the high-level expression of neutralizing antibodies in serum.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, a third semiconductor structure, a first bonding interface between the first semiconductor structure and the second semiconductor structure, and a second bonding interface between the first semiconductor structure and the third semiconductor structure. The first semiconductor structure includes an array of NAND memory strings and a first semiconductor layer in contact with sources of the array of NAND memory strings. The second semiconductor structure includes a first peripheral circuit of the array of NAND memory strings including a first transistor, and a second semiconductor layer in contact with the first transistor. A third semiconductor structure includes a second peripheral circuit of the array of NAND memory strings including a second transistor, and a third semiconductor layer in contact with the second transistor.