Abstract: Understanding the complex effects of genetic perturbations on cellular state and fitness in human pluripotent stem cells (hPSCs) has been challenging using traditional pooled screening techniques which typically rely on unidimensional phenotypic readouts. Here, Applicants use barcoded open reading frame (ORF) overexpression libraries with a coupled single-cell RNA sequencing (scRNA-seq) and fitness screening approach, a technique we call SEUSS (ScalablE fUnctional Screening by Sequencing), to establish a comprehensive assaying platform. Using this system, Applicants perturbed hPSCs with a library of developmentally critical transcription factors (TFs), and assayed the impact of TF overexpression on fitness and transcriptomic cell state across multiple media conditions. Applicants further leveraged the versatility of the ORF library approach to systematically assay mutant gene libraries and also whole gene families.

Abstract: The present invention provides a method for recovering valuable metals from waste lithium ion batteries. The method comprises: short-circuit discharging, dismantling, crushing, roasting, and screening on waste lithium ion batteries to obtain active electrode powders; using alkaline solution to wash the active electrode powders, then filtering to remove copper and aluminum; drying the activated electrode powder after alkaline washing treatment, mix the dried activated electrode powder with starch and concentrated sulfuric acid and stir evenly to obtain the mixed material; calcining the mixed material with controlling the atmosphere; taking out the product obtained from calcination and using deionized water to extract the leachate and leaching residue with valence metal ions, and then obtaining the leachate after filtering.

Abstract: A three-dimensional (3D) memory device includes a stack, a plurality of contact structures, and a plurality of support structures. The stack in an insulating structure includes conductive layers and dielectric layers stacked alternatingly, and the stack includes a staircase structure. Each contact structure extends through the insulating structure and is in contact with a respective conductive layer in the staircase structure. The support structures extend through the stack in the staircase structure. The contact structures are arranged in a first row and a second row, the first row of contact structures is in electrical contact with the peripheral device, and the second row of contact structures is in electrical insulation with the peripheral device.

Abstract: A three-dimensional (3D) memory device includes a stack, a plurality of contact structures, and a plurality of support structures. The stack in an insulating structure includes a plurality of conductive layers and a plurality of dielectric layers stacked alternatingly, and the stack includes a staircase structure. The plurality of contact structures each extends through the insulating structure and in contact with a respective conductive layer of the plurality of conductive layers in the staircase structure. The plurality of support structures extends through the stack in the staircase structure. Each support structure is in contact with one of the plurality of contact structures.

Abstract: Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.

Abstract: A three-dimensional (3D) memory device includes a core array region and a staircase region adjacent to the core array region. The core array region includes a memory stack having a plurality of conductor layers and a plurality of dielectric layers stacked alternatingly, a first semiconductor layer disposed over the memory stack, and a channel structure extending through the memory stack and the first semiconductor layer. The staircase region includes a staircase structure, a supporting structure disposed over the staircase structure, and a plurality of contacts contacting the plurality of conductor layers in the staircase structure. The first semiconductor layer overlaps the core array region in a plan view of the 3D memory device and the supporting structure overlaps the staircase region in the plan view of the 3D memory device.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, a channel local contact, a slit structure, and a staircase local contact. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The channel local contact is above and in contact with the channel structure. The slit structure extends vertically through the memory stack. The staircase local contact is above and in contact with one of the conductive layers at a staircase structure on an edge of the memory stack. Upper ends of the channel local contact, the slit structure, and the staircase local contact are flush with one another.

Abstract: A permeable pavement system including a permeable pavement composition and a related method are provided. The permeable pavement system includes a first layer of a permeable pavement composition including a quantity of a first permeable pavement material and a quantity of cured carbon fiber composite material (CCFCM) incorporated therewith, the first layer defining a first surface; and a second layer of a second permeable pavement material deposited over a substantial entirety of and covering the first surface of the first layer of the permeable pavement composition, wherein the first layer interfaces with the second layer to at least strengthen the permeable pavement system.

Abstract: Example management systems and methods are described. In one example, the management system includes at least one processor and a baseboard management controller (BMC). A data bus used for data transmission is included between the at least one processor and the BMC. The at least one processor is configured to convert a first protocol packet including first management data of the system into a second protocol packet, and send the second protocol packet through the data bus. A protocol type of the second protocol packet is a transmission protocol type of the data bus. A protocol type of the first protocol packet is different from the protocol type of the second protocol packet, and a transmission rate of the first protocol packet is lower than a transmission rate of the second protocol packet.

Abstract: Embodiments described herein provide a parameter-efficient finetuning mechanism, referred to as “factor-tuning,” which first learns a compact representation of parameter changes with existing datasets on multiple domains, and then fine-tunes a small number of parameters (automatically extracted from the learned representation) on a new downstream task. In this way, the representation learned in the first step is shared across domains and transferred to new downstream tasks.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A sacrificial layer on a substrate, a first stop layer on the sacrificial layer, a P-type doped semiconductor layer having an N-well on the first stop layer, and a dielectric stack on the P-type doped semiconductor layer are sequentially formed. A plurality of channel structures each extending vertically through the dielectric stack and the P-type doped semiconductor layer are formed, stopping at the first stop layer. The dielectric stack is replaced with a memory stack, such that each of the plurality of channel structures extends vertically through the memory stack and the P-type doped semiconductor layer. The substrate, the sacrificial layer, and the first stop layer are sequentially removed to expose an end of each of the plurality of channel structures. A conductive layer is formed in contact with the ends of the plurality of channel structures.

Abstract: A three-dimensional (3D) memory device is disclosed. The 3D memory device comprises an alternating layer stack on a substrate, a plurality of channel holes penetrating the alternating layer stack, a channel structure in each channel hole, and a top selective gate cut structure having a laminated structure and located between two rows of channel structures.

Abstract: A semiconductor device semiconductor device includes a stack having a first surface and a second surface opposing the first surface. The stack can include word line layers and insulating layers alternating with the word line layers between the first surface and the second surface. The stack can further include a process stop layer between the lower most insulating layer and the second surface. The stack can extend along an X-Y plane having an X direction and a Y direction perpendicular. The semiconductor device can further include a slit structure crossing the stack between the first surface and the second surface in Z direction. In a cross-section perpendicular to the Y direction, distances between the slit structure and the process stop layer at two sides of the slit structure are each larger than distances at either side of the slit structure between the word line layers and the slit structure.

Abstract: A side impact protection mechanism is provided and is disposed on a lateral wing of any component of a child carrier and includes a side impact protection block, a locking component and an operating component. The side impact protection block is switchable between a folded position and an unfolded position, so that the side impact protection block is closely fitted with or at least partially protrudes from the lateral wing. The locking component is switchable between a locking position and a releasing position, so that the side impact protection block is restrained from leaving from the unfolded position or allowed to pivot from the unfolded position to the folded position. The operating component can drive the locking component to move toward the releasing position.

Abstract: A method for forming a three-dimensional memory device can include forming a staircase structure. An alternating layer stack is disposed and etched to form steps. A continuous layer disposed on the staircase structure continuously extends over the steps. An insulating layer is disposed on the continuous layer and a slit is formed extending through the staircase structure. The slit exposes sidewalls of the continuous layer and the steps. The sacrificial layer is removed and a cavity is formed in place of the continuous layer. An etch stop layer is disposed in the cavity and continuously extends over the steps. Openings are formed through the insulating layer and expose a portion of a lateral surface of the etch stop layer. The openings are extended through the etch stop layer to expose a lateral surface of each step of the steps. Contacts are formed in the openings.

Abstract: A three-dimensional (3D) memory device is disclosed. The 3D memory device comprises an alternating layer stack on a substrate, and a top selective gate cut structure having a laminated structure embedded in an upper portion of the alternating layer stack and extending along a lateral direction. The laminated structure of the top selective gate cut structure comprises a dielectric filling wall and a dummy channel and a dummy functional layer on both sides of the dielectric filling wall.

Abstract: The present disclosure discloses a child safety seat, which includes: a base, a rear portion of which is formed with a top rod protruding upwardly; a seat rotatably fixed on the base; and a tether telescopically connected to the base, wherein, the tether can be automatically retracted when it is extended relative to the base. The child safety seat of the present disclosure has an advantage of convenient connection and is not easy to misuse.

Abstract: Disclosed are a fault early-warning method and a fault early-warning system applied to a gas turbine unit, and an apparatus. The method includes: calculating, by means of a mechanism model, predicted data of prediction parameters in a gas turbine unit, and performing data comparison on the predicted data and real data of the prediction parameters, so as to obtain an error matrix; constructing several Kriging primary functions according to the mechanism model; screening an optimal Kriging primary function from the several Kriging primary functions according to the error matrix, and performing error compensation on the mechanism model by using the optimal Kriging primary function; and performing fault early warning on the gas turbine unit by means of the mechanism model after error compensation. By means of the present application, the problem of a large number of fault false alarms in fault early warning of an existing gas turbine is solved.

Abstract: Three-dimensional (3D) memory devices and methods for forming the same are disclosed. The 3D memory device includes a doped semiconductor layer, a source select gate line disposed on the doped semiconductor layer, a stack structure including interleaved conductive layers and dielectric layers formed on the source select gate line, and a channel structure extending through the stack structure and the source select gate line and in contact with the doped semiconductor layer. The channel structure includes a semiconductor channel and a memory film. The source select gate line is in contact with the semiconductor channel.

Abstract: A three-dimensional (3D) memory device includes a plurality of memory planes and a separation block. Each memory plane includes a plurality of memory blocks. Each memory block includes a memory stack including interleaved conductive layers and first dielectric layers, and a plurality of channel structures each extending through the memory stack. The separation block extending laterally to separate each two adjacent memory planes. Each separation block includes a dielectric stack including interleaved second dielectric layers and the first dielectric layers. The first dielectric layers extend across the memory blocks and the separation block, and the second dielectric layers separate the conductive layers of two adjacent memory blocks.