Abstract: The present disclosure provides a fracturing fluid mixing equipment including a clear water supply system, at least two mixing systems, at least one powder tank, at least two powder conveying systems, a mixing tank, a feeding system and a power system. The clear water supply system has two parallel water supply paths which are connected to the mixing system and the mixing tank respectively. The powder conveying system is connected to the powder tank. There are same number of powder conveying systems and mixing systems which are connected in one-to-one correspondence. The mixing system is connected into the mixing tank. The feeding system adds powder by pneumatic conveying. The power system provides driving force by pure electric power and/or electro-hydraulic power. According to present disclosure, the power system can reduce fuel consumption and exhaust emissions.

Abstract: In certain aspects, a memory device includes an array of memory cells and a plurality of peripheral circuits coupled to the array of memory cells. The peripheral circuits include a first peripheral circuit including a recess gate transistor. The peripheral circuits also include a second peripheral circuit including a flat gate transistor.

Abstract: An apparatus and method for parameter comprehensive monitoring and troubleshooting of power transformation and distribution are disclosed. The apparatus includes a data acquisition unit, an on-site CPU, a main CPU, an operation and maintenance control center, a UPS and an energy storage breaking mechanism. Each on-site CPU compares the relevant state values of equipment line collected by a data acquisition unit with a threshold set by fiber Bragg grating sensor nodes and sums up to a main CPU. The main CPU stores and display the relevant state values through a display screen. The node represents each distribution point. A link represents a data transmission path. An attached table displays all state parameters. A working state of the distribution equipment is determined according to a color of the node and the link.

Abstract: Provided is an analysis method for determining gas-bearing situation of an unknown shale reservoir, includes: S1, selecting a shale reservoir of a target interval of a place; and collecting data of parameters of cores of each of a known gas-bearing shale reservoir A and a known water-bearing shale reservoir B; S2, calculating average values of the parameters of each of the reservoirs A and B respectively; S3, calculating average differences of the parameters of each of the reservoirs; S4, calculating covariance values of the parameters of each of the reservoirs; S5, establishing, according to the covariance values, an equation group and resolving discriminant coefficients; S6, establishing a discriminant equation according to the discriminant coefficients and solving a discriminant index; and S7, obtaining values of parameters of cores of a sample of the unknown shale reservoir, calculating a discriminant value, and determining gas-bearing situation of the unknown shale reservoir.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack including interleaved conductive layers and dielectric layers above the substrate, a plurality of channel structures each extending vertically through the memory stack, a semiconductor layer above and in contact with the plurality of channel structures, a plurality of source contacts above the memory stack and in contact with the semiconductor layer, a plurality of contacts through the semiconductor layer, and a backside interconnect layer above the semiconductor layer including a source line mesh in a plan view. The plurality of source contacts are distributed below and in contact with the source line mesh. A first set of the plurality of contacts are distributed below and in contact with the source line mesh.

Abstract: The present disclosure discloses a base assembly and a child safety seat for a vehicle. The base assembly includes a base; a supporting leg; a sliding element telescopically disposed on the base, the supporting leg being pivotally connected to the sliding element and extends and retracts together with the sliding element; and a traction element configured to pull the supporting leg to move towards the base as the supporting leg rotating from an unfolded position to a folded position. The base assembly and the child safety seat provided by the present disclosure simplify the operation of a user, so that the operation is simple and convenient, and the user's experience is good.

Abstract: A semiconductor device includes an insulating layer, a conductive layer stacking with the insulating layer and including a first conductive sublayer and a second conductive sublayer, a memory stack disposed on a side of the conductive layer away from the insulating layer, a spacer structure through the conductive layer, a contact structure in the spacer structure and extending vertically through the insulating layer, and a channel structure including a semiconductor channel. The contact structure includes a first contact portion and a second contact portion in contact with each other. A lateral cross-sectional area of the second contact portion is greater than a lateral cross-sectional area of the first contact portion. A portion of the semiconductor channel is in contact with the first conductive sublayer. The second conductive sublayer is disposed between the first conductive sublayer and the memory stack.

Abstract: A method for performing an erasing operation on a memory device is provided. The memory device includes a bottom select gate, a plate line above the bottom select gate, a word line above the plate line, a pillar extending through the bottom select gate, the plate line, and the word line, a source line under the pillar, a drain cap above the pillar, and a bit line formed above the drain cap. A first positive voltage bias is applied to the bottom select gate. A second positive voltage bias is applied to the plate line. The first positive voltage bias to the bottom select gate is reduced. A negative voltage bias is applied to the source line.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a first semiconductor layer, an array of NAND memory strings, and a first peripheral circuit of the array of NAND memory strings. Sources of the array of NAND memory strings are in contact with a first side of the first semiconductor layer. The first peripheral circuit includes a first transistor in contact with a second side of the first semiconductor layer opposite to the first side. The second semiconductor structure includes a second semiconductor layer and a second peripheral circuit of the array of NAND memory strings. The second peripheral circuit includes a second transistor in contact with the second semiconductor layer.

Abstract: The present disclosure provides a folding mechanism suitable for a baby carrier. The baby carrier includes a first part and a second part. The first part and the second part are arranged in a longitudinal direction. The folding mechanism includes a connecting element. The second part is movably connected to the first part through the connecting element, and an extending direction of the connecting element is parallel to the longitudinal direction.

Abstract: Embodiments of methods for forming contact structures and semiconductor devices thereof are disclosed. In an example, a method for forming a semiconductor device includes forming a spacer structure from a first surface of the base structure into the base structure, forming a first contact portion surrounded by the spacer structure, and forming a second contact portion in contact with the first contact portion. The second contact extends from a second surface of the base structure into the base structure.

Abstract: A 3D memory device includes a memory stack including interleaved stack conductive layers and stack dielectric layers, a semiconductor layer, and a channel structure extending vertically through the memory stack into the semiconductor layer. A first lateral dimension of a first portion of the channel structure facing the semiconductor layer is greater than a second lateral dimension of a second portion of the channel structure facing the memory stack. The channel structure includes a memory film and a semiconductor channel A first doping concentration of part of the semiconductor channel in the first portion of the channel structure is greater than a second doping concentration of part of the semiconductor channel in the second portion of the channel structure.

Abstract: A port processing method, used to enhance an electrostatic discharge protection capability and an overstress protection capability. The method comprises: step S1, providing a cable having a plurality of terminal contact cores leading out of the cable, the plurality of terminal contact cores comprising contact cores disposed at two sides of the cable, and signal cores disposed within the cable; and S2, changing the signal layout of the contact cores and the signal cores, so as to enhance the electrostatic discharge protection capability and the overstress protection capability. The method for changing the signal layout comprises: using the contact cores as a signal ground, and disposing a contact spring plate at a middle portion of each of the contact cores and each of the signal cores; and extending lengths of the contact cores outward.

Abstract: A data processing method for a log structured merge (LSM) tree includes selecting SST files to be compressed and merged in a current layer and a next layer, sequentially reading the SST files to be compressed and merged in the current layer and the next layer from a first storage device and sequentially writing the SST files in a second storage device, randomly reading the SST files to be compressed and merged from the second storage device into a memory according to key sequence numbers of data blocks included in the SST files to be compressed and merged, and performing compression and merge processing on the SST files to be compressed and merged. Sequential and random read and write speed of the second storage device is higher than that of the first storage device.

Abstract: Aspects of the disclosure provide a semiconductor device and method. An example method include forming a stack of layers on a substrate, the stack of layers including a source sacrificial layer, a conductive layer, gate sacrificial layers and insulating layers; forming a staircase into the stack of layers in a staircase region that is adjacent to an array region; forming channel structures in the array region, a channel structure including a channel layer surrounded by one or more insulating layers and extending into the stack of layers; replacing the source sacrificial layer with a source layer in conductive connection with the channel layer, the source layer and the conductive layer forming a common source layer; replacing the gate sacrificial layers with gate layers; and forming a first contact structure in the staircase region, the first contact structure forming a conductive connection with the common source layer.

Abstract: Devices, systems, and methods for a vehicular safety system in autonomous vehicles are described. An example method for safely controlling a vehicle includes selecting, based on a first control command from a first vehicle control unit, an operating mode of the vehicle, and transmitting, based on the selecting, the operating mode to an autonomous driving system, wherein the first control command is generated based on input from a first plurality of sensors, and wherein the operating mode corresponds to one of (a) a default operating mode, (b) a minimal risk condition mode of a first type that configures the vehicle to pull over to a nearest pre-designated safety location, (c) a minimal risk condition mode of a second type that configures the vehicle to immediately stop in a current lane, or (d) a minimal risk condition mode of a third type that configures the vehicle to come to a gentle stop.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a peripheral circuit on the substrate, a memory stack including interleaved conductive layers and dielectric layers above the peripheral circuit, an N-type doped semiconductor layer above the memory stack, a plurality of channel structures each extending vertically through the memory stack into the N-type doped semiconductor layer, a conductive layer in contact with upper ends of the plurality of channel structures, at least part of which is on the N-type doped semiconductor layer, and a source contact above the memory stack and in contact with the N-type doped semiconductor layer.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes an insulating layer, a semiconductor layer, a memory stack including interleaved conductive layers and dielectric layers, a source contact structure extending vertically through the insulating layer from an opposite side of the insulating layer with respect to the semiconductor layer to be in contact with the semiconductor layer, and a channel structure extending vertically through the memory stack and the semiconductor layer into the insulating layer or the source contact structure.

Abstract: The present disclosure relates to a high and low pressure manifold fluid supply system for fracturing units, including: a trailer, a high and low pressure manifold arranged on the trailer, a support frame arranged on a platform of the trailer, and a power distribution switch cabinet arranged on the support frame, which is configured to be electrically connected to the electrically-driven fracturing units and configured to distribute electricity to the electrically-driven fracturing units. Through the high and low pressure manifold fluid supply system integrated with electricity supply facilities therein according to the present disclosure, the electrically-driven fracturing units are powered, in this way, the electricity supply and distribution system in the well site can be effectively simplified, the connection distance of the cables can be shorten, and further the time spent on connection can be saved, thereby improving the well site layout efficiency.