Patents by Inventor Kwang Soo Kim

Kwang Soo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11424533
    Abstract: Disclosed is an antenna control method and apparatus. The antenna control method includes determining an azimuth angle of an antenna based on ephemeris information of a satellite, determining an elevation angle and a cross level of the antenna based on the azimuth angle and controlling the antenna based on the azimuth angle, the elevation angle, and the cross level.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: August 23, 2022
    Assignee: INTELLIAN TECHNOLOGIES, INC.
    Inventors: Jong Hwan Cha, Kwang Soo Kim
  • Publication number: 20220243174
    Abstract: Methods for generating midbrain dopamine (mDA) neuronal progenitor cells useful for autologous cell therapy in Parkinson's Disease, compositions comprising the cells, and methods of use thereof.
    Type: Application
    Filed: May 21, 2020
    Publication date: August 4, 2022
    Inventor: Kwang-Soo KIM
  • Patent number: 11380966
    Abstract: Various embodiments of the present invention relate to a secondary battery having a structure for suppressing multi-tab short circuits, and the technical problem to be solved is providing a secondary battery capable of increasing the insulation level of multi-tabs by forming insulating layers on the multi-tabs of an electrode assembly. To this end, the present invention provides a secondary battery comprising: a case; an electrode assembly accommodated inside the case and having multi-tabs; and a cap plate closing the case and having electrode terminals electrically connected to the multi-tabs of the electrode assembly, wherein the surfaces of the multi-tabs are coated with insulating layers.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: July 5, 2022
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Dong Hyun Lee, Hyung Sik Kim, Kwang Soo Kim
  • Patent number: 11331416
    Abstract: Provided is a method for manufacturing a stent, including: coating a coating material on a stent; and drying the stent at a temperature in the range of from 40° C. to 150° C., and the coating and the drying are simultaneously performed.
    Type: Grant
    Filed: May 27, 2019
    Date of Patent: May 17, 2022
    Assignee: OSSTEM CARDIOTEC CO., LTD.
    Inventors: Chang Hun Kum, Kwang Soo Kim, Bunam Chang, Jae Hwa Cho, Sung Nam Kang, Gyu Hyun Jin, Hye Young Kwon, Ji Seon Hong, Saet Byeol Kim
  • Publication number: 20220130851
    Abstract: A vertical memory device includes a substrate having a peripheral circuit structure, first gate patterns having first gate pad regions stacked vertically from the substrate, vertical channel structures penetrating the first gate patterns, first gate contact structures each extending vertically to a corresponding first gate pad region, mold patterns stacked vertically from the substrate, the mold patterns each being positioned at the same height from the substrate with a corresponding gate pattern, peripheral contact structures penetrating the mold patterns to be connected to the peripheral circuit structure, a first, block separation structure disposed between the first gate contact structures and the peripheral contact structures, and a first peripheral circuit connection wiring extending across the first block separation structure to connect one of the first gate contact structures to one of the peripheral contact structures.
    Type: Application
    Filed: January 5, 2022
    Publication date: April 28, 2022
    Inventors: Jun Hyoung KIM, Kwang Soo KIM, Seok Cheon BAEK, Geun Won LIM
  • Patent number: 11286020
    Abstract: A ballast water-free ship using a difference in the depth of the bottom shell plate between the bow/stern and the midship section and a construction method thereof. A stepped portion is formed between either the bow or the stern and the midship section, such that the depth of the bottom shell plate of either the bow or the stern differs from the depth of the bottom shell plate of the cargo containment in the midship section, so that cargo can be loaded and unloaded without ballast water operation.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: March 29, 2022
    Assignee: Korea Institute of Ocean Science & Technology
    Inventors: Hee Jin Kang, Jin Choi, Hae Seong Ahn, Kwang Soo Kim, Geun Tae Yim, Myoung Soo Kim
  • Patent number: 11264401
    Abstract: A vertical memory device includes a substrate having a peripheral circuit structure, first gate patterns having first gate pad regions stacked vertically from the substrate, vertical channel structures penetrating the first gate patterns, first gate contact structures each extending vertically to a corresponding first gate pad region, mold patterns stacked vertically from the substrate, the mold patterns each being positioned at the same height from the substrate with a corresponding gate pattern, peripheral contact structures penetrating the mold patterns to be connected to the peripheral circuit structure, a first block separation structure disposed between the first gate contact structures and the peripheral contact structures, and a first peripheral circuit connection wiring extending across the first block separation structure to connect one of the first gate contact structures to one of the peripheral contact structures.
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: March 1, 2022
    Inventors: Jun Hyoung Kim, Kwang Soo Kim, Seok Cheon Baek, Geun Won Lim
  • Publication number: 20220053810
    Abstract: The present invention relates to a saccharide syrup composition comprising an organic acid or its salt and an oligosaccharide, and more specifically, the saccharide syrup composition comprises allulose.
    Type: Application
    Filed: November 4, 2021
    Publication date: February 24, 2022
    Inventors: Kyung Ho Joo, Kwang Soo Kim
  • Publication number: 20220028878
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.
    Type: Application
    Filed: October 6, 2021
    Publication date: January 27, 2022
    Inventors: Joo Won Park, Kyeong Jin Park, Kwang Soo Kim
  • Publication number: 20220008418
    Abstract: Described herein are aminoquinoline and aminoacridine based hybrids, pharmaceutical compositions and medicaments that include such aminoquinoline and aminoacridine based hybrids, and methods of using such compounds for diagnosing and/or treating infections, neurodegerative diseases or disorders, inflammation, inflammation associated diseases and disorders, and/or diseases or disorders that are treatable with dopamine agonists such as the restless leg syndrome.
    Type: Application
    Filed: April 26, 2021
    Publication date: January 13, 2022
    Inventors: Diwan S. Rawat, Sunny Manohar, Ummadisetty Chinna Rajesh, DEEPAK KUMAR, Anuj Thakur, Mohit Tripathi, Panyala Linga Reddy, Shamseer Kulangara Kandi, Satyapavan Vardhineni, Kwang-Soo Kim, Chun-Hyung Kim
  • Publication number: 20210391340
    Abstract: A semiconductor memory device includes gate electrodes arranged on a substrate to be spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, an upper insulation layer arranged on an uppermost gate electrode, channel structures penetrating through the upper insulation layer, and the gate electrodes in the first direction, and string selection line cut insulation layers horizontally separating the upper insulation layer and the uppermost gate electrode. Each of the string selection line cut insulation layers includes a protrusion protruding toward the uppermost gate electrode and positioning on the same level as the first gate electrode.
    Type: Application
    Filed: August 27, 2021
    Publication date: December 16, 2021
    Inventors: Hae-min LEE, Kwang-soo KIM, Sun-il SHIM
  • Patent number: 11191292
    Abstract: The present invention relates to a saccharide syrup composition comprising an organic acid or its salt and an oligosaccharide, and more specifically, the saccharide syrup composition comprises allulose.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: December 7, 2021
    Assignee: SAMYANG CORPORATION
    Inventors: Kyung Ho Joo, Kwang Soo Kim
  • Publication number: 20210327894
    Abstract: A three-dimensional semiconductor memory device may include a first stack block including first stacks arranged in a first direction on a substrate, a second stack block including second stacks arranged in the first direction on the substrate, and a separation structure provided on the substrate between the first stack block and the second stack block. The separation structure may include first mold layers and second mold layers, which are stacked in a vertical direction perpendicular to a top surface of the substrate.
    Type: Application
    Filed: June 28, 2021
    Publication date: October 21, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Junhyoung Kim, Kwang-soo Kim, GEUNWON LIM, JISUNG CHEON
  • Patent number: 11145669
    Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: October 12, 2021
    Inventors: Joo Won Park, Kyeong Jin Park, Kwang Soo Kim
  • Publication number: 20210308340
    Abstract: Provided is a method for manufacturing a stent, including: coating a coating material on a stent; and drying the stent at a temperature in the range of from 40° C. to 150° C., and the coating and the drying are simultaneously performed.
    Type: Application
    Filed: May 27, 2019
    Publication date: October 7, 2021
    Inventors: Chang Hun KUM, Kwang Soo KIM, Bunam CHANG, Jae Hwa CHO, Sung Nam KANG, Gyu Hyun JIN, Hye Young KWON, Ji Seon HONG, Saet Byeol KIM
  • Patent number: 11107826
    Abstract: A semiconductor memory device includes gate electrodes arranged on a substrate to be spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, an upper insulation layer arranged on an uppermost gate electrode, channel structures penetrating through the upper insulation layer, and the gate electrodes in the first direction, and string selection line cut insulation layers horizontally separating the upper insulation layer and the uppermost gate electrode. Each of the string selection line cut insulation layers includes a protrusion protruding toward the uppermost gate electrode and positioning on the same level as the first gate electrode.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: August 31, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hae-min Lee, Kwang-soo Kim, Sun-il Shim
  • Publication number: 20210259292
    Abstract: The present invention relates to a gel type food composition with excellent storage stability and a method for preparing thereof, and more specifically, relates to a gel type food composition having excellent physical properties by reducing changes of physical properties, contamination and syneresis during storage or distribution.
    Type: Application
    Filed: June 28, 2019
    Publication date: August 26, 2021
    Inventors: Bo Ram CHO, Jin Soo NOH, Kwang Soo KIM, Su Youn LIM
  • Publication number: 20210238556
    Abstract: Disclosed herein are methods of generating induced pluripotent stem cells. The method involves providing a quantity of somatic or non-embryonic cells, contacting the contacting the somatic or non-embryonic cells with a quantity of one or more programming factors and one or more RNA molecules, and culturing the somatic or non-embryonic cells for a period of time sufficient to generate at least one induced pluripotent stem cell. Various reprogramming factors and RNA molecules for use in the methods are disclosed herein. Also disclosed are cell lines and pharmaceutical compositions generated by use of the methods.
    Type: Application
    Filed: April 23, 2021
    Publication date: August 5, 2021
    Inventors: Kwang-Soo Kim, Young Cha
  • Patent number: 11075217
    Abstract: A vertical semiconductor device includes odd and even cell blocks, and odd and even block pad structures. Each of the odd cell blocks includes first conductive line structures including conductive lines and insulation layers alternatively stacked in a first direction. Each of the even cell blocks includes second conductive line structures having substantially the same shape as the first conductive line structures. The odd block pad structure is connected to first edge portions of the first conductive line structures. The even block pad structure is connected to second edge portions, opposite the first edge portions, of the second conductive line structures. Each of the odd cell blocks and the even cell blocks has a first width in a third direction. Each of the odd and even block pad structures is formed on a region of a substrate having a second width greater than the first width in the third direction.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: July 27, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang-Soo Kim, Tae-Seok Jang
  • Publication number: 20210221471
    Abstract: A ballast water-free ship using a difference in the depth of the bottom shell plate between the bow/stern and the midship section and a construction method thereof. A stepped portion is formed between either the bow or the stern and the midship section, such that the depth of the bottom shell plate of either the bow or the stern differs from the depth of the bottom shell plate of the cargo containment in the midship section, so that cargo can be loaded and unloaded without ballast water operation.
    Type: Application
    Filed: March 28, 2018
    Publication date: July 22, 2021
    Inventors: Hee Jin KANG, Jin CHOI, Hae Seong AHN, Kwang Soo KIM, Geun Tae YIM, Myoung Soo KIM