Patents by Inventor Lawrence A. Clevenger

Lawrence A. Clevenger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180047676
    Abstract: Methods for enhancing mechanical strength of back-end-of-line (BEOL) dielectrics to prevent crack propagation within interconnect stacks are provided. After forming interconnect structures in a dielectric material layer, a pore filling material is introduced into pores of a portion of the dielectric material layer that is located in a crack stop region present around a periphery of a chip region. By filling the pores of the portion of the dielectric material layer located in the crack stop region, the mechanical strength of the dielectric material layer is selectively enhanced in the crack stop region.
    Type: Application
    Filed: August 23, 2017
    Publication date: February 15, 2018
    Inventors: Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Huai Huang, Christopher J. Penny, Michael Rizzolo
  • Patent number: 9882028
    Abstract: A method for forming fins of a semiconductor device comprises forming a first hardmask on a substrate, a sacrificial layer on the first hardmask, and a second hardmask on the sacrificial layer. Portions of the second hardmask and the sacrificial layer are removed to form a mandrel. Spacers are formed adjacent to the sacrificial mandrel. A second sacrificial layer is deposited and portions of the second sacrificial layer are removed to expose portions of the spacers and the first hardmask. A first doped region and a second doped region are formed by annealing. The second hardmask and the sacrificial spacer are removed. Undoped portions of the sacrificial mandrel and the second sacrificial layer are removed to further expose portions of the first hardmask. Exposed portions of the first hardmask are removed to expose portions of the semiconductor substrate, and exposed portions of the semiconductor substrate are removed to form fins.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: January 30, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kangguo Cheng, Lawrence A. Clevenger, Balasubramanian S. Pranatharthiharan, John H. Zhang
  • Patent number: 9881431
    Abstract: An aspect of the disclosure includes a security system and method having a key with nanoscale features. The key includes a body. At least one pattern member disposed on the body, the pattern member formed using a directed self-assembly polymer to define a pattern of random feature structures thereon, the feature structures having a width of less than 100 nanometers.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: January 30, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Michael Rizzolo
  • Publication number: 20180025943
    Abstract: A method for forming conductive contacts on a wafer comprises forming a first hardmask, planarizing layer, second hardmask, and a layer of sacrificial mandrel material, and removing portions of the layer of sacrificial mandrel material to expose portions of the second hardmask and form a first and second sacrificial mandrel. Spacers are formed adjacent to the sacrificial mandrels. A filler material is deposited on the second hardmask, and a first mask is formed on the filler material. An exposed portion of the second sacrificial mandrel is removed to form a first cavity. The depth of the first cavity is increased. The first mask, portions of the first and second sacrificial mandrels, the filler material, portions of the second hardmask, the spacers, portions of the planarization layer and the first hardmask are removed. A second cavity is formed and the first and second cavities are filled with a conductive material.
    Type: Application
    Filed: August 15, 2017
    Publication date: January 25, 2018
    Inventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann A. M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole Saulnier
  • Publication number: 20180005868
    Abstract: A conductive line structure comprises a first conductive line arranged in a first dielectric layer, a second conductive line arranged in the first dielectric layer, a cap layer arranged on the first conductive line and the second conductive line, and an airgap arranged between the first conductive line and the second conductive line, the airgap defined by the first dielectric layer and the cap layer.
    Type: Application
    Filed: June 29, 2016
    Publication date: January 4, 2018
    Inventors: Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. Deprospo, Huai Huang, Christopher J. Penny, Michael Rizzolo
  • Publication number: 20180005937
    Abstract: A method of forming a self-aligned pattern of vias in a semiconductor device comprises etching a pattern of lines that contain notches that are narrower than other parts of the line. Thereafter, vias are created where the notches are located. The locations of the vias are such that the effect of blown-out areas is minimized. Thereafter, the lines are etched and the vias and line areas are filled. The layers are planarized such that the metal fill is level with a surrounding ultra-low-k dielectric. Additional metal layers, lines, and vias can be created. Other embodiments are also described herein.
    Type: Application
    Filed: June 30, 2016
    Publication date: January 4, 2018
    Inventors: Benjamin David Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Michael Rizzolo, Nicole Adelle Saulnier
  • Publication number: 20180005941
    Abstract: A semiconductor device includes a porous dielectric layer formed on an interconnect layer and including a recessed portion, a conductive layer formed in the recessed portion, and a conformal cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the conformal cap layer. Porous dielectric material is protected by back-filled pore fillers or leave-in porogens from process integration such as chemical mechanical polishing (CMP). The pore fillers or porogens are removed after CMP and Cap process to achieve low capacitance. A self-aligned cap protects the conductor metal from exposing the severe conditions during the pore filler or porogen removal process.
    Type: Application
    Filed: June 30, 2016
    Publication date: January 4, 2018
    Inventors: Benjamin David BRIGGS, Lawrence A. CLEVENGER, Bartlet H. DEPROSPO, Huai HUANG, Christopher J. PENNY, Michael RIZZOLO
  • Publication number: 20180005875
    Abstract: A method of forming a self-aligned pattern of vias in a semiconductor device comprises forming a first layer of mandrels, then forming a second layer of mandrels orthogonal to the first layer of mandrels. The layout of the first and second layers of mandrels defines a pattern that can be used to create vias in a semiconductor material. Other embodiments are also described.
    Type: Application
    Filed: June 30, 2016
    Publication date: January 4, 2018
    Inventors: Sean D. Burns, Lawrence A. Clevenger, Nelson M. Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny, Nicole Saulnier
  • Publication number: 20180006138
    Abstract: A method for forming fins of a semiconductor device comprises forming a first hardmask on a substrate, a sacrificial layer on the first hardmask, and a second hardmask on the sacrificial layer. Portions of the second hardmask and the sacrificial layer are removed to form a mandrel. Spacers are formed adjacent to the sacrificial mandrel. A second sacrificial layer is deposited and portions of the second sacrificial layer are removed to expose portions of the spacers and the first hardmask. A first doped region and a second doped region are formed by annealing. The second hardmask and the sacrificial spacer are removed. Undoped portions of the sacrificial mandrel and the second sacrificial layer are removed to further expose portions of the first hardmask. Exposed portions of the first hardmask are removed to expose portions of the semiconductor substrate, and exposed portions of the semiconductor substrate are removed to form fins.
    Type: Application
    Filed: June 29, 2016
    Publication date: January 4, 2018
    Inventors: Kangguo Cheng, Lawrence A. Clevenger, Balasubramanian S. Pranatharthiharan, John H. Zhang
  • Publication number: 20180005880
    Abstract: A method of forming a semiconductor structure includes forming at least one trench in a dielectric layer, forming a barrier layer on a bottom of said at least one trench, sidewalls of said at least one trench and a top surface of the dielectric layer, the barrier layer having a non-uniform thickness, and selectively thinning at least a first portion of the barrier layer using one or more cycles comprising forming an oxidized layer in the first portion of the barrier layer using a neutral beam oxidation and removing the oxidized layer using an etching process.
    Type: Application
    Filed: June 30, 2016
    Publication date: January 4, 2018
    Inventors: Benjamin D. Briggs, Lawrence A. Clevenger, Cornelius Brown Peethala, Michael Rizzolo, Chih-Chao Yang
  • Publication number: 20180005883
    Abstract: A method (and structure) includes performing an initial partial anneal of a metal interconnect overburden layer for semiconductor devices being fabricated on a chip on a semiconductor wafer. Orientation of an early recrystallizing grain at a specific location on a top surface of the metal overburden layer is determined, as implemented and controlled by a processor on a computer. A determination is made whether the orientation of the early recrystallizing grain is desirable or undesirable.
    Type: Application
    Filed: June 30, 2016
    Publication date: January 4, 2018
    Inventors: Benjamin David BRIGGS, Lawrence A. CLEVENGER, Bartlet H. DEPROSPO, Michael RIZZOLO
  • Publication number: 20180005885
    Abstract: A method for forming conductive lines comprises forming a hardmask on an insulator layer, a planarizing layer on the hardmask, and a hardmask on the planarizing layer, removing exposed portions of a layer of sacrificial mandrel material to form first and second sacrificial mandrels on the hardmask, and depositing a layer of spacer material in the gap, and over exposed portions of the first and second sacrificial mandrels and the hardmask. Portions of the layer of spacer material are removed to expose the first and second sacrificial mandrels. A filler material is deposited between the first and second sacrificial mandrels. A portion of the filler material is removed to expose the first and second sacrificial mandrels. Portions of the layer of spacer material are removed to expose portions of the hardmask. A trench is formed in the insulator layer, and the trench is filled with a conductive material.
    Type: Application
    Filed: January 13, 2017
    Publication date: January 4, 2018
    Inventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann A.M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
  • Patent number: 9858388
    Abstract: A system for monitoring participants in a group includes one or more thermal image capturing devices configured to capture one or more thermal images of a plurality of participants in an event, and a processing device configured to receive the one or more thermal images and identification data for at least one of the plurality of participants. The processing device is configured to perform a method that includes identifying the at least one of the plurality of participants, calculating a heat profile of the at least one of the plurality of participants, comparing the heat profile to a reference profile, and determining whether a deviation exists between the heat profile and the reference profile. The method also includes, based on detecting the deviation, calculating a magnitude of the deviation and determining whether a health risk exists based on the magnitude of the deviation.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: January 2, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Maryam Ashoori, Benjamin D. Briggs, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Jonathan H. Connell, II, Nalini K. Ratha, Michael Rizzolo
  • Publication number: 20170372909
    Abstract: Aspects of the disclosure include method of making semiconductor structures. Aspects include providing a semiconductor structure including a plurality of spacer, an organic planarization layer, and a SiARC layer. Aspects also include forming an inverted mask on the semiconductor structure, the inverted mask including an inverted mask opening above a portion of the plurality of spacers and a portion of the TiN layer. Aspects also include eroding the portion of the plurality of spacers below the inverted mask opening. Aspects also include depositing a fill material masking the portion of the plurality of spacers below the inverted mask opening and the portion of the TiN layer below the inverted mask opening to generate a masked TiN layer segment and an unmasked TiN layer segment and removing a portion of the unmasked TiN layer segment.
    Type: Application
    Filed: June 27, 2016
    Publication date: December 28, 2017
    Inventors: BENJAMIN D. BRIGGS, LAWRENCE A. CLEVENGER, YANN A. MIGNOT
  • Publication number: 20170368991
    Abstract: Techniques are provided for alerting drivers of hazardous driving conditions using the sensing capabilities of wearable mobile technology. In one aspect, a method for alerting drivers of hazardous driving conditions includes the steps of: collecting real-time data from a driver of a vehicle, wherein the data is collected via a mobile device worn by the driver; determining whether the real-time data indicates that a hazardous driving condition exists; providing feedback to the driver if the real-time data indicates that a hazardous driving condition exists, and continuing to collect data from the driver in real-time if the real-time data indicates that a hazardous driving condition does not exist. The real-time data may also be collected and used to learn characteristics of the driver. These characteristics can be compared with the data being collected to help determine, in real-time, whether the driving behavior is normal and whether a hazardous driving condition exists.
    Type: Application
    Filed: August 21, 2017
    Publication date: December 28, 2017
    Inventors: Benjamin D. Briggs, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Jonathan H. Connell, II, Nalini K. Ratha, Michael Rizzolo
  • Publication number: 20170368992
    Abstract: Techniques are provided for alerting drivers of hazardous driving conditions using the sensing capabilities of wearable mobile technology. In one aspect, a method for alerting drivers of hazardous driving conditions includes the steps of: collecting real-time data from a driver of a vehicle, wherein the data is collected via a mobile device worn by the driver; determining whether the real-time data indicates that a hazardous driving condition exists; providing feedback to the driver if the real-time data indicates that a hazardous driving condition exists, and continuing to collect data from the driver in real-time if the real-time data indicates that a hazardous driving condition does not exist. The real-time data may also be collected and used to learn characteristics of the driver. These characteristics can be compared with the data being collected to help determine, in real-time, whether the driving behavior is normal and whether a hazardous driving condition exists.
    Type: Application
    Filed: August 21, 2017
    Publication date: December 28, 2017
    Inventors: Benjamin D. Briggs, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Jonathan H. Connell, II, Nalini K. Ratha, Michael Rizzolo
  • Patent number: 9852946
    Abstract: A method for forming conductive lines on a wafer comprises forming a first sacrificial mandrel and a second sacrificial mandrel. Spacers are formed adjacent to the first and second sacrificial mandrels. A filler material is deposited on the second hardmask. A first mask is formed on a portion of the second sacrificial mandrel. A first cavity and a second cavity are formed that expose portions of the second hardmask, and exposed portions of the second mask and exposed portions of the filler material are removed to expose portions of the first hardmask. Exposed portions of the first hardmask, the planarizing layer and the first hardmask are removed to expose portions of the insulator layer. Exposed portions of the insulator layer are removed to form a trench in the insulator layer and the trench is filled with a conductive material.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: December 26, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann A. M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole Saulnier
  • Publication number: 20170365590
    Abstract: Self-aligned three dimensional vertically stacked chip stacks and processes for forming the same generally include two or more vertically stacked chips supported by a scaffolding structure, the scaffolding structure defined by a first scaffolding trench and at least one additional scaffolding trench, the first scaffolding trench comprising a bottom surface having a width and a sidewall having a height extending from the bottom surface to define a lowermost trench in a scaffolding layer, the at least one additional scaffolding trench overlaying the first scaffolding trench having a sidewall having a height and a width, wherein the width of the at least one scaffolding trench is greater than the first scaffolding trench width to define a first stair between the first scaffolding trench and the at least one additional trench; a first chip secured to the first scaffolding trench having a height less than the first scaffolding trench sidewall height; and at least one additional chip secured to and supported by the
    Type: Application
    Filed: September 5, 2017
    Publication date: December 21, 2017
    Inventors: Lawrence A. Clevenger, Carl J. Radens, Yiheng Xu, John H. Zhang
  • Publication number: 20170361201
    Abstract: Embodiments are directed to a support apparatus. The support apparatus might comprise a body configured to support an entity. The body might comprise a material that has a physical property. The support apparatus might further comprise a coupler system configured to couple electric current from a power source to the material. The material is arranged such that coupling an electric current to the material changes the physical property of the material. Embodiments are further directed to a method. The method might comprise forming one or more cavities in a support apparatus. The method might further comprise providing one or more couplers in electrical contact with each of the one or more channels. The method further comprises filling each of the one or more cavities with a fluid that has electrically changeable rigidity. Finally, the method might comprise connecting a power source to each of the one or more couplers.
    Type: Application
    Filed: June 20, 2016
    Publication date: December 21, 2017
    Inventors: Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Michael Rizzolo
  • Publication number: 20170365550
    Abstract: Semiconductor devices include a patterned dielectric layer overlaying a semiconductor substrate; a metal layer comprising copper disposed in the patterned dielectric layer; and a barrier layer formed at an interface between the dielectric layer and the metal layer, wherein the barrier layer is AlOxNy. The patterned dielectric may define a trench and via interconnect structure or first and second trenches for a capacitor structure. Also disclosed are processes for forming the semiconductor device, which includes subjecting the dielectric surfaces to a nitridization process to form a nitrogen enriched surface. Aluminum metal is then conformally deposited onto the nitrogen enriched surfaces to form AlOxNy at the aluminum metal/dielectric interface. The patterned substrate is then metalized with copper and annealed. Upon annealing, a copper aluminum alloy is formed at the copper metal/aluminum interface.
    Type: Application
    Filed: August 16, 2017
    Publication date: December 21, 2017
    Inventors: Lawrence A. Clevenger, Wei Wang, Chih-Chao Yang