Abstract: Relating to an opioid receptor agonist (1S,4S)-4-ethoxy-N-(2-((R)-9-(pyridin-2-yl)-6-oxaspiro[4.5]deca-9-yl)ethyl)-1,2,3,4-tetrahydronaphthalen-1-amine fumarate salt, a fumarate salt crystal form I thereof, and a preparation method and an application therefor.

Abstract: An array antenna is provided with: a first conductive member including a planar part; plural antennas arranged at a predetermined first interval to the planar part of the first conductive member, each of the plural antennas transmitting and receiving radio frequencies of a first polarization and radio frequencies of a second polarization that is different from the first polarization; and a second conductive member provided between the antennas adjacent to each other among the plural antennas via a gap of a predetermined second interval to the planar part of the first conductive member, the second conductive member being capacitively coupled to the first conductive member.

Abstract: A method of fabricating a semiconductor device includes the steps of: providing a semiconductor structure including a memory region and a logic region. The semiconductor structure includes a first interlayer dielectric and at least one magnetoresistive random access memory (MRAM) cell disposed on the first interlayer dielectric, and the MRAM cell is disposed in the memory region; depositing a second interlayer dielectric covering the first interlayer dielectric and the at least one MRAM cell; depositing a mask layer conformally covering the second interlayer dielectric; perform a planarization process to remove the mask layer in the memory region; after the step of performing the planarization process, removing the mask layer in the logic region.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A first inter-metal dielectric (IMD) layer is formed on a substrate. A cap layer is formed on the first IMD layer. A connection structure is formed on the substrate and penetrates the cap layer and the first IMD layer. A magnetic tunnel junction (MTJ) stack is formed on the connection structure and the cap layer. A patterning process is performed to the MTJ stack for forming a MTJ structure on the connection structure and removing the cap layer. A second IMD layer is formed on the first IMD layer and surrounds the MTJ structure. The semiconductor device includes the substrate, the connection structure, the first IMD layer, the MTJ structure, and the second IMD layer. The dielectric constant of the first IMD layer is lower than the dielectric constant of the second IMD layer.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

Abstract: The present invention relates to a process comprising the step of contacting an aqueous dispersion of swelled polymer particles with a rheology modifier and a binder to form a coatings composition with a VOC of less than 50 g/L. The swelled polymer particles arise from neutralization of alkali swellable polymer particles having a high acid core content and a low Tg shell. The composition arising from the process of the present invention is useful for improving open time, especially for low VOC coatings applications.

Abstract: An optical interferometer includes a beam splitter module and an optical sensor. The beam splitter module includes a lens assembly and a splitter cube. A light incident surface of the splitter cube is substantially orthogonal to an optical axis of the lens assembly. An acute angle is between the light incident surface and a light splitting surface of the splitter cube. A sampling surface of the splitter cube is substantially parallel to the light incident surface. A light reflecting surface of the splitter cube is substantially orthogonal to the light incident surface. The light incident surface is closer to the lens assembly than the sampling surface. A reference arm is defined between a splitter position on the light splitting surface and the light reflecting surface, a sample arm is defined between the splitter position and the sampling surface, and the reference arm is longer than the sample arm.

Abstract: A device includes a first dielectric layer, a first conductor, a second dielectric layer, a second conductor, and an etch stop layer. The first conductor is in the first dielectric layer. The second dielectric layer is over the first dielectric layer. The second conductor is in the second dielectric layer and electrically connected to the first conductor. The second conductor has a first portion over a top surface of the first conductor and a second portion extending downwards from the first portion and around the first conductor. The etch stop layer has a first portion between the second portion of the second conductor and the first dielectric layer and a second portion between the first dielectric layer and the second dielectric layer. A top surface of the first portion of the etch stop layer is lower than a top surface of the second portion of the etch stop layer.

Abstract: The invention provides an insert molded lens driving apparatus including a driving coil having two ends, wherein the lens holder includes multiple insert members for electrical connection partially embedded into the lens holder and spaced apart from each other. Each of the insert members electrically coupled to the driving coil and having a first connecting end extending along a first direction and a second connecting end extending along a second direction, which.

Abstract: A touch device and an operation method thereof is provided. By determining whether the operating event of the touch device or its touchpad satisfies an exclusion condition, the command triggered when the touchpad is pressed is determined to be ignored or not. Therefore, the corresponding command triggered by pressing the touchpad downward is automatically excluded when it does not want to be triggered. Therefore, the user can naturally disable the function of the corresponding command, which is executed when the pressing module is triggered, during use without using other controls, thereby improving the convenience of use.

Abstract: A magnetoresistive memory device includes a plurality of bottom conductive lines, a plurality of top conductive lines, a first memory cell, and a second memory cell. The top conductive lines are over the bottom conductive lines. The first memory cell is between the bottom conductive lines and the top conductive lines and includes a first magnetic tunnel junction (MTJ) stack. The second memory cell is adjacent the first memory cell and between the bottom conductive lines and the top conductive lines. The second memory cell includes a second MTJ stack, and a top surface of the second MTJ stack is higher than a top surface of the first MTJ stack.

Abstract: There are provided compounds of Formula (A) and pharmaceutically acceptable salts and esters thereof, and pharmaceutical compositions thereof, used for the prevention or treatment in a mammal of joint and bone disorders such as arthritis and osteoporosis.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a substrate having a magnetic tunneling junction (MTJ) region and a logic region; forming a MTJ on the MTJ region; forming a top electrode on the MTJ; forming an inter-metal dielectric (IMD) layer around the MTJ; removing the IMD layer directly on the top electrode to form a recess; forming a first hard mask on the IMD layer and into the recess; removing the first hard mask and the IMD layer on the logic region to form a contact hole; and forming a metal layer in the recess and the contact hole to form a connecting structure on the top electrode and a metal interconnection on the logic region.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.

Abstract: A memory layout structure, which is provided with multiple source lines between active areas, each source line has multiple branches electrically connecting with the active areas at opposite sides in alternating arrangement. Multiple word lines traverse through the active areas to form transistors. Multiple storage units are disposed between the word lines on the active areas in staggered array arrangement, and multiple bit lines electrically connect with all storage units on a corresponding active area, wherein each storage cell includes one of the storage unit, two of the transistors respectively at both sides of the storage unit, and two branches of the source line.

Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.

Abstract: A semiconductor structure is provided in the present invention, including a substrate having a device region and an alignment mark region defined thereon, a dielectric layer disposed on the substrate, a conductive via formed in the dielectric layer on the device region, a first trench formed in the dielectric layer on the alignment mark, a plurality of second trenches formed in the dielectric layer directly under the first trench and exposed from a bottom surface of the first trench, and a memory stacked structure disposed on the dielectric layer, directly covering a top surface of the conductive via and filling into the first trench and the second trench.

Abstract: The present application provides single-domain antibodies, and chimeric antigen receptors comprising one or more antigen binding domains each comprising a single-domain antibody. Further provided are engineered immune effector cells (such as T cells) comprising the chimeric antigen receptors. Pharmaceutical compositions, kits and methods of treating cancer are also provided.

Abstract: A vibration transducer for sensing vibrations includes a first flexible triboelectric member, a second flexible triboelectric member, a plurality of attachment points, a first electrode and a second electrode. The first flexible triboelectric member includes a first triboelectric layer and a material being on a first position on a triboelectric series. A conductive layer is deposited on the second side thereof. The second flexible triboelectric member includes a second triboelectric layer and a material being on a second position on the triboelectric series that is different from the first position on the triboelectric series. The second triboelectric member is adjacent to the first flexible triboelectric member. When the first triboelectric member comes into and out of contact with the second triboelectric member as a result of the vibrations, a triboelectric potential difference having a variable intensity corresponding to the vibrations can be sensed between the first and second triboelectric members.