Abstract: A generator includes: a built-in voltage controller disposed inside the housing of the motor and connected to the stator; a loop changeover switch, wherein one side of the three groups of loop polar phase contact points is connected to the current output unit through three phase lines, and the other side is connected to the current output unit through three loop lines; a three-phase short-circuit changeover switch is in a spaced arrangement with the loop changeover switch and includes three groups of short-circuit polar phase contact points, one side of which is connected to each other through short-circuit wire, and the other side is connected to each phase line; three converted-voltage output lines, wherein one end electrically connected to the loop polar phase contact points of the loop changeover switch is connected to one side of the loop lines; the other end is used to connect to a power device.

Abstract: A display device and a display driving circuit with electromagnetic interference suppression capability are provided. The display device includes a substrate, an active matrix, a display driver and a thin-film transistor (TFT) conditioning circuit. The active matrix disposed on the substrate includes multiple data lines, multiple gate lines and multiple pixels. The data lines intersect with the gate lines. The pixels are coupled to intersections of the data lines and the gate lines. The display driver disposed on the substrate generates signals for driving the data lines and/or the gate lines in response to a conditioned serial data clock. The TFT conditioning circuit disposed on the substrate is coupled to the display driver. The TFT conditioning circuit includes one or more TFTs, and attenuates an amplitude of a serial data clock in response to a predetermined gate bias to provide the conditioned serial data clock to the display driver.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

Abstract: The disclosure provides a semiconductor memory device including a substrate having a memory cell region and an alignment mark region; a dielectric layer covering the memory cell region and the alignment mark region; conductive vias in the dielectric layer within the memory cell region; an alignment mark trench in the dielectric layer within the alignment mark region; and storage structures disposed on the conductive vias, respectively. Each of the storage structures includes a bottom electrode defined from a bottom electrode metal layer, a magnetic tunnel junction (MTJ) structure defined from an MTJ layer, and a top electrode. A residual metal stack is left in the alignment mark trench. The residual metal stack includes a portion of the bottom electrode metal layer and a portion of the MTJ layer.

Abstract: A method for forming a semiconductor structure is disclosed. A substrate having a logic device region and a memory device region is provided. A first dielectric layer is formed on the substrate. Plural memory stack structures are formed on the first dielectric layer on the memory device region. An insulating layer is formed and conformally covers the memory stack structures and the first dielectric layer. An etching back process is performed to remove a portion of the insulating layer without exposing any portion of the memory stack structures. After the etching back process, a second dielectric layer is formed on the insulating layer and completely fills the spaces between the memory stack structures.

Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

Abstract: A curved screen (B) comprises the following layers sequentially arranged from inside to outside: a black light-absorbing layer (100), a microstructure array layer (200), and a transparent matrix layer (300). The microstructure array layer (200) consists of a plurality of microstructure units. The microstructure unit is a V-shaped recess (210) consisting of two intersecting inclined surfaces. The microstructure array layer (200) is rotationally symmetrical with respect to a center line of the curved screen (B). Angles of the V-shaped recesses (210) in respective longitudinal cross sections of the curved screen (B) are uniquely determined according to incident angles of light rays from a projector. Also disclosed are a method of arranging microstructures in the curved screen (B) and a projection system comprising the curved screen (B). The curved screen (B) has a higher contrast, improved brightness uniformity and an enlarged field of view.

Abstract: A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a bottom electrode layer on the IMD layer, wherein the bottom electrode layer comprises a gradient concentration; forming a free layer on the bottom electrode layer; forming a top electrode layer on the free layer; and patterning the top electrode layer, the free layer, and the bottom electrode layer to form a magnetic tunneling junction (MTJ).

Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

Abstract: A magnetoresistive random access memory (MRAM), including multiple cell array regions, multiple MRAM cells disposed in the cell array region, a silicon nitride liner conformally covering on the MRAM cells, an atomic layer deposition dielectric layer covering on the silicon nitride liner in the cell array region, wherein the surface of atomic layer deposition dielectric layer is a curved surface concave downward to the silicon nitride liner at the boundary of MRAM cells, and an ultra low-k dielectric layer covering on the atomic layer deposition dielectric layer.

Abstract: The present invention discloses a reconfigurable wideband phase-switched screen (PSS) based on an artificial magnetic conductor (AMC). Gap capacitance between patches is controlled by changing the capacitance of varactors, so that periodic units have a plurality of continuous frequency points. A phase difference between two adjacent frequency bands is 143°-217°, so that the periodic structure absorbs incident electromagnetic waves in a wide frequency band, and the broadband PSS is implemented with a relative bandwidth of 45.2%. The AMC structure according to the present invention is simple in structure and easy to process, with a thickness less than one twentieth of the working wavelength, and greatly reduces size and costs.

Abstract: A semiconductor structure is provided in the present invention, including a substrate having a device region and an alignment mark region defined thereon, a dielectric layer disposed on the substrate, a conductive via formed in the dielectric layer on the device region, a first trench formed in the dielectric layer on the alignment mark, a plurality of second trenches formed in the dielectric layer directly under the first trench and exposed from a bottom surface of the first trench, and a memory stacked structure disposed on the dielectric layer, directly covering a top surface of the conductive via and filling into the first trench and the second trench.

Abstract: The present invention discloses a method for improving the blood compatibility of a material surface by using a controllable grafting technique. The method involves placing a monomer NVP, an RAFT reagent and a solvent acetonitrile in a container, adding an initiator AIBN, mixing the same uniformly, removing oxygen with liquid nitrogen, making the same react in an oil bath; after polymerization, adding liquid nitrogen to quench and stop the reaction, thus obtaining PVP-COOH; mixing the PVP-COOH with DCC and NHS; adding dry dichloromethane to the mixture in a nitrogen atmosphere, adding mercaptoethylamine, and making the same react in darkness at room temperature; obtaining a crude sample; dissolving the crude sample in water, and performing dialysis with deoxygenated water in darkness, and then obtaining HS-PVP by freeze-drying. An Au—S bond chemisorption method is used to controllably graft an anti-protein high-molecular polymer onto an Au surface.

Abstract: A sequence signal generator and a sequence signal generation method are provided. In the sequence signal generation method, a waveform output instruction sent by a host computer is received to acquire waveform data. The waveform data includes original square wave sequence data and target square wave sequence data, and the target square wave sequence data includes a preliminary delay parameter and a secondary delay parameter. An original square wave sequence signal is acquired according to the original square wave sequence data. According to the preliminary delay parameter, preliminary delay processing is performed on the original square wave sequence signal to acquire an intermediate square wave sequence signal, and according to the secondary delay parameter, secondary delay processing is performed on the intermediate square wave sequence signal to acquire a target square wave sequence signal.

Abstract: A directional microphone including a casing and a microphone element is provided. The casing has a front sound reception hole and at least one rear sound reception hole. The microphone element is disposed in the casing. The microphone element has a front sound reception surface and a rear sound reception surface. The front sound reception hole is located on a same side as the front sound reception surface, and the front sound reception hole is aligned with the front sound reception surface. The rear sound reception hole is located on a same side as the rear sound reception surface, but the rear sound reception hole and the rear sound reception surface are misaligned with each other.

Abstract: CD73 (also known as ecto-5?-nucleotidase) inhibitor compounds are provided, as well as compositions and uses thereof for treating or preventing CD73-associated or related diseases, disorders and conditions, including cancer- and immune-related disorders. CD73 inhibitor compounds include compounds having the structure set forth in Formula I and pharmaceutically acceptable esters or salts thereof.

Abstract: Disclosed in the present disclosure is a recombinant DNA polymerase. The recombinant DNA polymerase is any one selected from: A) a protein, having amino acid modifications at positions 408, 409 and 485, and at least one of amino acid modification(s) at positions 53, 59, 199, 243, 526, 558, 613, 641, 671, 673, 674, 692 and 709 compared to the amino acid sequence of a wild-type KOD DNA polymerase; B) a protein derived from the protein in A), formed by deleting amino acids 1 to 29 from a C-terminus of the protein in A) and keeping the remaining amino acids unchanged; and C) a protein derived from the protein in A) or B), formed by connecting a tag to the N-terminus or C-terminus of the amino acid sequence of the protein in A) or B), wherein the protein in A), B) and C) has DNA polymerase activity.

Abstract: A detecting method for blood is provided. The method includes the following steps. A sensing device including a base and at least one response electrode is provided, wherein the response electrode is spaced apart from a gate end of the base. Blood including blood cells and targets is disposed on the response electrode. The blood is separated into a first part and a second part, wherein the first part is in contact with the response electrode, and the blood cell count in the first part is less than that in the second part. A voltage is applied on the response electrode, such that an electric field is generated between the response electrode and the gate end of the base, and a detection current generated from the base is measured to detect a characterize of the targets.

Abstract: A connector system includes a wafer that has a shield that replaces standard ground terminals and an additional isolation shield to provide enhanced electrical isolation. To further improve electrical performance, transmit and receive channels can be provided in separate wafers on one side of connector system with a space or wafer between the transmit and signal wafers. On the other side of the connector system the wafer will have one or two spaces that are either black or filled with terminals that operate at lower frequencies. A conductive insert can provide further isolation intra-wafer.

Abstract: Described are a low temperature plasma reaction device and a hydrogen sulfide decomposition method. The reaction device includes: a first cavity; a second cavity, the second cavity being embedded inside or outside the first cavity; an inner electrode, the inner electrode being arranged in the first cavity; an outer electrode; and a barrier dielectric arranged between the outer electrode and the inner electrode. The hydrogen sulfide decomposition method includes: implementing dielectric barrier discharge at the outer electrode and the inner electrode of the low temperature plasma reaction device, introducing a raw material gas containing hydrogen sulfide into the first cavity to implement a hydrogen sulfide decomposition method, and continuously introducing a thermally conductive medium into the second cavity in order to control the temperature of the first cavity of the low temperature plasma reaction device.