Abstract: The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a via structure includes a via having via sidewall surfaces defined by a semiconductor substrate. The via sidewall surfaces have a first portion and a second portion. A conductive layer is disposed in the via on the first portion of the via sidewall surfaces, and a dielectric layer is disposed on the second portion of the via sidewall surfaces. The dielectric layer is disposed between the second portion of the via sidewall surfaces and the conductive layer. In an example, the dielectric layer is an oxide layer.

Abstract: The present invention is to provide a fine filter structure including two filter units, wherein the first filter unit comprises an upper frame, a coarse screen laid over top side of the upper frame, and a post having a top end formed with at least one through hole, a bottom end fixedly provided on top side of the coarse screen, and a channel in communication with each through hole and bottom side of the coarse screen; and the second filter unit comprises a lower frame and a fine screen laid over top side of the lower frame and having more mesh openings per unit area than the coarse screen. The top side of the lower frame can be connected with the bottom side of the upper frame so as not only to form a single unit but also to form a re-filtration space between the coarse screen and fine screen.

Abstract: A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a substrate, a first well, a first heavily doping region, a field oxide, a first dielectric layer, and a conductive layer. The first well is disposed on the substrate, and the first heavily doping region is disposed in the first well. The field oxide is disposed on the first well and adjacent to the first heavily doping region. The first dielectric layer is disposed on the field oxide and covering the field oxide. The conductive layer is disposed on the first dielectric layer. The first well and the first heavily doping region have a first type doping.

Abstract: The present invention is to provide a brewing container, which includes a base formed with a through groove; a water-stopping member; a cup having a bottom end formed with a lower opening, wherein the bottom of the cup is engageable with the through groove so as to joint the cup, the water-stopping member and the base together to form a single unit; and a filtering device including an upper filtering element and a lower filtering element, wherein the lower filtering element has a larger number of openings than the upper filtering element, the bottom of the lower filtering element can be mounted inside the cup to cover the lower opening and form a first filtering space between the lower filtering element and the lower opening, and the bottom of the upper filtering element is engageable with the top of the lower filtering element to form a second filtering space therebetween.

Abstract: The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a via structure includes a via having via sidewall surfaces defined by a semiconductor substrate. The via sidewall surfaces have a first portion and a second portion. A conductive layer is disposed in the via on the first portion of the via sidewall surfaces, and a dielectric layer is disposed on the second portion of the via sidewall surfaces. The dielectric layer is disposed between the second portion of the via sidewall surfaces and the conductive layer. In an example, the dielectric layer is an oxide layer.

Abstract: The present invention is to provide a tea brewer, which includes a container main body having a top side concavely provided with a receiving space for receiving liquid and coffee powder (or tea leaves) and a bottom side formed with a through hole in communication with the receiving space, at least one engaging element each provided on the bottom side and having at least one groove, a water-stopping plate having a post which extends into the receiving space through the through hole and peripherally provided with at least one guide rail each of which is movably received in the corresponding groove, and a water-stopping block detachably connected to the post and located in the receiving space. Since each guide rail extends into the corresponding groove with ease and without being compressed or deformed, it is easy for a user to remove the water-stopping plate from the tea brewer for cleaning.

Abstract: A wafer grinding system includes a robot arm having a suction board at one end and a table within reach of the robot arm. An upper surface of the table has a vacuum surface for sucking and holding wafers. A pusher coupled to the robot arm extends about the periphery of the suction board. The pusher flattens wafers against the upper surface of the table, allowing the table to hold by suction wafers that would otherwise be too bowed to be held in that way. Additionally, a table can have a vacuum area that is small in comparison to the wafers, which is another way of increasing the magnitude of wafer bow that can be tolerated. A grinding system can use the reduced vacuum area concept to allow the positioning table to hold bowed wafers and the pusher concept to allow the chuck tables to hold bowed wafers.

Abstract: The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate.

Abstract: A biological sensing structure includes a mesa integrally connected a portion of a substrate, wherein the mesa has a top surface and a sidewall surface adjacent to the top surface. The biological sensing structure includes a first light reflecting layer over the top surface and the sidewall surface of the mesa. The biological sensing structure includes a filling material surrounding the mesa, wherein the mesa protrudes from the filling material. The biological sensing structure includes a stop layer over the filling material and a portion of the first light reflecting layer. The biological sensing structure includes a second light reflecting layer over a portion of the stop layer and a portion of the top surface of the mesa. The biological sensing structure includes an opening in the second light reflecting layer to partially expose the top surface of the mesa.

Abstract: A method of fabricating an integrated semiconductor device, comprising: providing a substrate having a first region and a second region; and forming a semiconductor unit on the first region and forming a micro electro mechanical system (MEMS) unit on the second region in one process.

Abstract: A semiconductor device and method of forming the semiconductor device are disclosed, where the semiconductor device includes additional implant regions in the source and drain areas of the device for improving Ron-sp and BVD characteristics of the device. The device includes a gate electrode formed over a channel region that separates first and second implant regions in the device substrate. The first implant region has a first conductivity type, and the second implant region has a second conductivity type. A source diffusion region is formed in the first implant region, and a drain diffusion region is formed in the second implant region.

Abstract: Routing a message to a recipient based on a topic associated with the message may include: receiving a message lacking a recipient address; searching for at least one recipient address based on a topic associated with the message; and sending the message to the at least one recipient address.

Abstract: A semiconductor device having a well, a p well implant bounded at least in part within a substrate by the well, a conductive layer disposed on the substrate, a high voltage n? (HVN?) doped well implanted in the p well implant, a high voltage p doped (HVPD) well implanted in the p well implant, and a drain n? well and a source n? well disposed in the HVN? doped well and HVPD well, respectively, is provided. A method of fabricating the semiconductor device is also provided. In certain embodiments, the method of fabricating the semiconductor device is characterized by implanting the HVN? ions at a first tilt angle and/or implanting the HVPD ions at a second tilt angle.

Abstract: A method of fabricating an integrated semiconductor device, comprising: providing a substrate having a first region and a second region; and forming a semiconductor unit on the first region and forming a micro electro mechanical system (MEMS) unit on the second region in one process.

Abstract: A semiconductor device and method of forming the semiconductor device are disclosed, where the semiconductor device includes additional implant regions in the source and drain areas of the device for improving Ron-sp and BVD characteristics of the device. The device includes a gate electrode formed over a channel region that separates first and second implant regions in the device substrate. The first implant region has a first conductivity type, and the second implant region has a second conductivity type. A source diffusion region is formed in the first implant region, and a drain diffusion region is formed in the second implant region.

Abstract: A method of forming of biological sensing structures including a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A first light reflecting layer is deposited over the top surface and the sidewall surface of each mesa. A filling material is formed over a first portion of the first light reflecting layer. A stop layer is deposited over the filling material and a second portion of the first light reflecting layer. A sacrificial layer is formed over the stop layer and is planarized exposing the stop layer. A first opening is formed in the stop layer and the first light reflecting layer. A second light reflecting layer is deposited over the first opening. A second opening is formed in the second light reflecting layer.

Abstract: A method of exchanging gas in a process of making oxygenated water is performed in a water tank. The water tank has a water inlet, a water outlet, a gas inlet, and a gas outlet. Water is received in the water tank. The water outlet and the gas inlet are closed, and the gas outlet is opened. And then supply the water tank with water through the water inlet to make a water level in the water tank go up and make gas above the water level escape through the gas outlet. Next, close the gas outlet and open the gas inlet and the water outlet once the water tank is almost filled up. Finally, close the gas inlet and the water outlet when the water level is lower than a predetermined level.

Abstract: A semiconductor device having a well, a p well implant bounded at least in part within a substrate by the well, a conductive layer disposed on the substrate, a high voltage n? (HVN?) doped well implanted in the p well implant, a high voltage p doped (HVPD) well implanted in the p well implant, and a drain n? well and a source n? well disposed in the HVN? doped well and HVPD well, respectively, is provided. A method of fabricating the semiconductor device is also provided. In certain embodiments, the method of fabricating the semiconductor device is characterized by implanting the HVN? ions at a first tilt angle and/or implanting the HVPD ions at a second tilt angle.

Abstract: A method of supplying oxygenated water is performed on a water tank, in which oxygenated water is received. The method lets the water tank supply a constant amount of the oxygenated water once, and then supply the water tank with water and pure oxygen to recover the dissolution ratio of oxygen of the oxygenated water in the water tank. The method may supply a constant amount of oxygenated water every time for the user to drink it up once.