Abstract: A method for reducing stress induced defects in heterogeneous epitaxial interfaces of a semiconductor device is disclosed. The method includes forming a fin structure with a fin base, a superlattice structure on the fin base, forming a polysilicon gate structure on the fin structure, forming a source/drain (S/D) opening within a portion of the fin structure uncovered by the polysilicon gate structure, modifying the first surfaces of the first layers to curve a profile of the first surfaces, depositing first, second, and third passivation layers on the first, second, and third surfaces, respectively, forming an epitaxial S/D region within the S/D opening, and replacing the polysilicon gate structure with a metal gate structure. The superlattice structure includes first and second layers with first and second lattice constants, respectively, and the first and second lattice constants are different from each other.

Abstract: The disclosure discloses a genetically engineered strain for sarcosine production as well as a construction method and application. The genetically engineered strain is obtained by using Escherichia coli as a host and by integrating a single copy of imine reductase gene dpkA on its genome; singly copying citrate synthase gene gltA; knocking out glyoxylate cycle inhibitor gene iclR; knocking out malate synthase gene aceB; integrating a single copy of isocitrate lyase gene aceA; integrating a single copy of membrane-bound transhydrogenase gene pntAB; knocking out 2-ketate reductase gene ycdW; integrating a single copy of phosphoenolpyruvate carboxylase gene ppc; and knocking out pyruvate kinase gene pykF. After system metabolism transformation, the engineered strain can synthesize sarcosine with glucose and methylamine as main raw materials. The sarcosine titer can reach 10 g/L after fermentation for 30 h in a 5 L fermenter.

Abstract: Embodiments include methods, systems, devices, instructions, and media for limiting hot-cold swap wear leveling in memory devices. In one embodiment, wear metric values are stored and monitored using multiple wear leveling criteria. The multiple wear leveling criteria include a hot-cold swap wear leveling criteria, which may make use of a write count offset value. Based on a first wear metric value of a first management group and a second wear metric value of a second management group, the first management group and the second management group are selected for a wear leveling swap operation. The wear leveling swap operation is performed with a whole management group read operation of the first management group to read a set of data, and a whole management group write operation to write the set of data to the second management group.

Abstract: Methods of forming a semiconductor device are provided. A method according to the present disclosure includes forming, over a workpiece, a dummy gate stack comprising a first semiconductor material, depositing a first dielectric layer over the dummy gate stack using a first process, implanting the workpiece with a second semiconductor material different from the first semiconductor material, annealing the dummy gate stack after the implanting, and replacing the dummy gate stack with a metal gate stack.

Abstract: A polymer-based spherical powder preparation device and preparation process are disclosed. The preparation device comprises a mill milling system and an inductively coupled plasma powder spheroidization system. The mill milling system of the preparation device can achieve ultra-fine grinding of the material at room temperature by applying strong extrusion, shear and circumferential stress to the material; and the inductively coupled plasma powder spheroidization system using high temperature plasma as high temperature heat source, the polymer powder can be heated uniformly, and the melting and cooling rate is fast, so the spheroidization can be completed in a short time. The preparation process of polymer based spherical powder was integrated and continuously produced by the preparation device.

Abstract: The present disclosure provides a secondary battery, a battery module and a vehicle. The secondary battery includes an electrode assembly, a case and a cap assembly. The case has an accommodating cavity, and the electrode assembly is accommodated in the accommodating cavity. The electrode assembly includes electrode units, and the electrode units are stacked in an axial direction of the accommodating cavity. The cap assembly includes a cap plate and an insulating member provided at an inner side of the cap plate, the cap plate is connected with the case, and the insulating member is positioned at a side of the electrode assembly in the axial direction. The insulating member is provided with a first surface at a side close to the electrode assembly, and the first surface is a flat surface.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a semiconductor layer formed over the substrate. The semiconductor device further includes a first channel layer and a second channel layer and a first insulating structure interposing the first channel layer and the semiconductor layer and a second insulating structure interposing the first channel layer and the second channel layer. The semiconductor device further includes a gate stack abutting the first channel layer and the second channel layer, and the gate stack includes a first portion vertically sandwiched between the first channel layer and the semiconductor layer and a second portion vertically sandwiched between the first channel layer and the second channel layer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a semiconductor stack including semiconductor layers over a substrate, wherein the semiconductor layers are separated from each other and are stacked up along a direction substantially perpendicular to a top surface of the substrate; an isolation structure around a bottom portion of the semiconductor stack and separating active regions; a metal gate structure over a channel region of the semiconductor stack and wrapping each of the semiconductor layers; a gate spacer over a source/drain (S/D) region of the semiconductor stack and along sidewalls of a top portion of the metal gate structure; and an inner spacer over the S/D region of the semiconductor stack and along sidewalls of lower portions of the metal gate structure and wrapping edge portions of each of the semiconductor layers.

Abstract: An example method may include performing a first wear leveling operation on a group of data blocks based on a write counter associated with the group of data blocks, wherein the first wear leveling operation comprises including the group of data blocks in a plurality of groups of mapped data blocks, responsive to including the group of data blocks in the plurality of groups of mapped data blocks, performing a second wear leveling operation on the group of data blocks, wherein performing the second wear leveling operation comprises determining a base address of the group of data blocks, the base address indicating a location at which the group of data blocks begins, and accessing a data block in the group of data blocks based on the base address of the group of data blocks and a logical address associated with the data block.

Abstract: The present invention belongs to the bioengineering field, and relates to a method for fermentation production of L-theanine by using an Escherichia coli genetically engineered bacterium. The engineered bacterium is obtained by serving a strain as an original strain, wherein the strain is obtained after performing a single copy of T7RNAP, a dual copy of gmas, xylR knockout, and sucCD knockout on an Escherichia coli W3110 genome, and by integrating genes xfp, pta, acs, gltA, and ppc, and knocking out ackA on the genome. The present invention has a high yield, and stable production performance; after 20-25 h, L-theanine has a titer of 75-80 g/L, and the yield is up to 52-55%. The fermentation broth is purified by membrane separation in combination with a cation-anion resin series technique. Moreover, the one-step crystallization yield is 72.3% and the L-theanine final product has a purity of 99%.

Abstract: Systems, methods, circuits, and devices for data protection are provided. In one example, a data processing device incudes a Physical Unclonable Function (PUF) source that is configured to generate PUF values, a bus, a plurality of bus access components that are configured to access the bus, and a masking information generation circuit. The masking information generation circuit is configured to generate masking information for at least one pair of bus access components using at least one PUF value and to transmit said information to the bus access components. The pair is configured in such a way that one bus access component masks the data according to the masking information generated for the pair before the data is sent over the bus and the other bus access component de-masks the data received over the bus according to the masking information generated for the pair.

Abstract: A channel loss compensation circuit utilized in a receiving end of an electronic device includes a load, first and second transistors, first and second current sources, an adjustable capacitor, and an adjustable resistor. The first transistor has a first, second, and third terminals. The first terminal receives an input signal, and the second terminal is coupled to a power supply voltage through the load. The second transistor has a fourth, fifth terminal, and sixth terminals. The fourth terminal receives the input signal, and the fifth terminal is coupled to the power supply voltage through the load. The first current source is coupled between the third terminal and a reference voltage. The second current source is coupled between the sixth terminal and the reference voltage. The adjustable capacitor and the adjustable resistor are coupled between the third terminal and the sixth terminal.

Abstract: In an embodiment, a system includes a plurality of memory components that each include a plurality of management groups. Each management group includes a plurality of sub-groups. The system also includes a processing device that is operatively coupled with the plurality of memory components to perform wear-leveling operations that include maintaining a sub-group-level delta write count (DWC) for each of the sub-groups of each of the management groups of a memory component in the plurality of memory components. The wear-leveling operations also include determining, in connection with a write operation to a first sub-group of a first management group of the memory component, that a sub-group-level DWC for the first sub-group equals a management-group-move threshold, and responsively triggering a management-group-move operation from the first management group to a second management group of the memory component.

Abstract: The disclosure discloses a genetically engineered strain for sarcosine production as well as a construction method and application. The genetically engineered strain is obtained by using Escherichia coli as a host and by integrating a single copy of imine reductase gene dpkA on its genome; singly copying citrate synthase gene gltA; knocking out glyoxylate cycle inhibitor gene iclR; knocking out malate synthase gene aceB; integrating a single copy of isocitrate lyase gene aceA; integrating a single copy of membrane-bound transhydrogenase gene pntAB; knocking out 2-ketate reductase gene ycdW; integrating a single copy of phosphoenolpyruvate carboxylase gene ppc; and knocking out pyruvate kinase gene pykF. After system metabolism transformation, the engineered strain can synthesize sarcosine with glucose and methylamine as main raw materials. The sarcosine titer can reach 10 g/L after fermentation for 30 h in a 5 L fermenter.

Abstract: A method for reducing stress induced defects in heterogeneous epitaxial interfaces of a semiconductor device is disclosed. The method includes forming a fin structure with a fin base, a superlattice structure on the fin base, forming a polysilicon gate structure on the fin structure, forming a source/drain (S/D) opening within a portion of the fin structure uncovered by the polysilicon gate structure, modifying the first surfaces of the first layers to curve a profile of the first surfaces, depositing first, second, and third passivation layers on the first, second, and third surfaces, respectively, forming an epitaxial S/D region within the S/D opening, and replacing the polysilicon gate structure with a metal gate structure. The superlattice structure includes first and second layers with first and second lattice constants, respectively, and the first and second lattice constants are different from each other.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a substrate and a first fin and a second fin formed over the substrate. The semiconductor structure further includes a first anti-punch through region formed in the first fin and a second anti-punch through region formed in the second fin and first nanostructures formed over the first fin and second nanostructures formed over the second fin. The semiconductor structure further includes a barrier layer formed over the second anti-punch through region and a first gate formed around the first nanostructures. The semiconductor structure further includes a second gate formed around the second nanostructures. In addition, an interface between the barrier layer and the second anti-punch through region is higher than an interface between the first anti-punch through region and the first gate.

Abstract: A digital audio array circuit is provided. The digital audio array circuit includes at least two digital audio units and a system master unit. Each of the digital audio units is configured to transform a received sound wave to a digital audio signal. Each of the digital audio units includes a left/right channel configuration input terminal. The system master unit is connected to the at least two digital audio units in time division multiplexing to receive the digital audio signals. The left/right channel configuration input terminal of each of the digital audio units is configured to receive a same synchronizing signal.

Abstract: Methods, systems, and devices for performing an access operation on a memory cell, incrementing a value of a first counter based on performing the access operation on the memory cell, determining that the incremented value of the first counter satisfies a threshold, incrementing a value of a second counter based on determining that the incremented value of the first counter satisfies the threshold, and performing a maintenance operation on the memory cell based on determining that the incremented value of the first counter satisfies the threshold are described.

Abstract: A bidirectional active stylus and a sensing system are provided. The stylus includes a receiving electrode, a first emitting diode and a second emitting diode. The receiving electrode is configured to receive a synchronous signal from a touch pad. The receiving electrode is disposed at a position closer to the touch pad with respect to the first emitting diode and the second emitting diode. The strength of received signals is improved.

Abstract: Provided herein are KRAS G12C inhibitors, composition of the same, and methods of using the same. These inhibitors are useful for treating a number of disorders, including pancreatic, colorectal, and lung cancers.