Abstract: Disclosed are a simulation platform and a simulation method for leakage detection and treatment. The simulation platform includes a water tank open at the top, which is a holding device; simulation sand, which is laid at the bottom of the water tank, and the upper area of the simulation sand is the experimental water filling area for filling simulation water; a leakage simulation device, which is buried in the simulation sand; a plurality of electrodes, which are distributed on the simulation sand for collecting and sending potential and current signals to a data processing terminal; a hydraulic brake, which is arranged in the experimental water filling area and used for stirring the simulation water; the hydraulic brake is not turned on in the static water environment simulation, and is turned on in the dynamic water environment simulation.

Abstract: Embodiments include methods, systems, devices, instructions, and media for limiting hot-cold swap wear leveling in memory devices. In one embodiment, wear metric values are stored and monitored using multiple wear leveling criteria. The multiple wear leveling criteria include a hot-cold swap wear leveling criteria, which may make use of a write count offset value. Based on a first wear metric value of a first management group and a second wear metric value of a second management group, the first management group and the second management group are selected for a wear leveling swap operation. The wear leveling swap operation is performed with a whole management group read operation of the first management group to read a set of data, and a whole management group write operation to write the set of data to the second management group.

Abstract: Example implementations relate to audio samples to detect device anomalies. For example, computing device, comprising: a processing resource and a non-transitory computer readable medium storing instructions executable by the processing resource to: generate a matrix of audio information for a plurality of audio samples of a device, select audio information from one of the plurality of audio samples, generate a plurality of principal components for the selected audio information utilizing a principal component expansion, select a principal component from the plurality of principal components based on a quantity of variance, and detect an anomaly of the device based on a comparison between a real time audio sample of the device and the selected principal component.

Abstract: A sensor is provided. A first terminal of a first current source and a first terminal of a first transistor are connected to a cathode of the photodiode. A control terminal of a second transistor is connected to an output terminal of a first operational amplifier. A first terminal of the second transistor is connected to a second terminal of the first transistor through a first current mirror circuit. A second terminal of the second transistor is connected to a second current source, a second input terminal of a second operational amplifier and a first terminal of a third transistor. A first input terminal of the second operational amplifier is connected to the first terminal of the first transistor. A control terminal of the third transistor is connected to an output terminal of the second operational amplifier.

Abstract: A method for fabrication of a 3D printed part with high through-plane thermal conductivity is provided, where pure polymer particles and a carbon-based filler for heat conduction are subjected to milling and mixing in the mechanochemical reactor disclosed in Chinese patent ZL 95111258.9 under the controlled milling conditions including milling pan surface temperature, milling pan pressure, and number of milling cycles; then a resulting mixture is extruded to obtain 3D printing filaments; and finally, the 3D printing filaments are used to fabricate the 3D printed part with high through-plane thermal conductivity through fused deposition modeling (FDM) 3D printing. The fabrication method can realize the fabrication of a 3D printed part with high through-plane thermal conductivity through the FDM 3D printing technology, features simple process, continuous production, etc., and is suitable for the industrial production of thermally-conductive parts with complex structures.

Abstract: The present disclosure provides a new class of compounds useful for the modulation of beta-secretase enzyme (BACE) activity. The compounds have a general Formula (I): (Formula (I)) wherein variables X, Y, R2, R3, R4, R5, R6, and n of Formula (I) are defined herein. This disclosure also provides pharmaceutical compositions comprising the compounds, and uses of the compounds and compositions for treatment of disorders and/or conditions related to A? plaque formation and deposition, resulting from the biological activity of BACE. Such BACE mediated disorders include, for example, Alzheimer's disease, cognitive deficits, cognitive impairments, and other central nervous system conditions.

Abstract: A touch control system includes: a touch panel; an active pen having a plurality of functions, the functions being used for controlling the active pen or the touch panel and initiated only by at least one voice signal, the active pen including: a voice receiving module configured to receive the at least one voice signal; a voice analyzing module configured to analyze the at least one voice signal to generate a controlling command; and a control module configured to determine that the controlling command is configured to control the active pen or the touch panel; and a touch controller electrically connected to the touch panel and receive, in response to the controlling command being configured to control the touch panel, the controlling command.

Abstract: A method for forming a gate-all-around structure is provided. The method includes forming a plurality of a first type of semiconductor layers and a plurality of a second type of semiconductor layers alternately stacked over a fin. The first type of semiconductor layers includes a first semiconductor layer and a second semiconductor layer, and the first semiconductor layer has a thickness greater than that of the second semiconductor layer. The method also includes removing the second type of semiconductor layers. In addition, the method includes forming a gate to wrap around the first type of semiconductor layers.

Abstract: The present disclosure relates to the field of genetic engineering, especially relates to a xylose-induced genetically engineered bacteria used for producing ectoine as well as a construction method and use thereof. The genetically engineered bacteria is constructed by heterologously expressing the ectABC gene cluster from Halomonas elongata on the E. coli chromosome, using the promoter of xylose transporter coding gene xylF to control the RNA polymerase from T7 bacteriophage, reconstructing a synthesis pathway of ectoine and constructing a plasmid-free system, and enhancing the expression of target genes by a strong promoter T7; the yield of ectoine reached 12-16 g/L after 20-28 h fermentation in shake flask, and reached 35-50 g/L after 24-40 h fermentation in a 5 L fermentor.

Abstract: A neural network processor and a control method are provided. The neural network processor includes a neural network processor cluster formed by multiple single-core neural network processors and a peripheral module. The peripheral module includes a main control unit and a DMA module. The DMA module is used to convey a first task descriptor to the main control unit. The main control unit is used to: analyze the first task descriptor, determine, according to an analysis result, a subtask to be distributed to each selected processor; modify the first task descriptor to acquire a second task descriptor respectively corresponding to each selected processor; and distribute each second task descriptor to each corresponding selected processor, and activate each selected processor to process the corresponding subtask. The main control unit schedules and manages all of the single-core neural network processors, thereby leveraging operational performance of the neural network processor.

Abstract: A memory sub-system periodically performs a first wear leveling operation using a direct mapping function on a data management unit of a memory component in the memory sub-system at a first frequency. The memory sub-system further periodically performs a second wear leveling operation using indirect mapping on a group of data management units of the memory component at a second frequency, wherein the second wear leveling operation is performed less frequently than the first wear leveling operation.

Abstract: Methods, systems, and devices for performing an access operation on a memory cell, incrementing a value of a first counter based on performing the access operation on the memory cell, determining that the incremented value of the first counter satisfies a threshold, incrementing a value of a second counter based on determining that the incremented value of the first counter satisfies the threshold, and performing a maintenance operation on the memory cell based on determining that the incremented value of the first counter satisfies the threshold are described.

Abstract: Provided herein are KRAS G12C inhibitors, composition of the same, and methods of using the same. These inhibitors are useful for treating a number of disorders, including pancreatic, colorectal, and lung cancers.

Abstract: A read operation to retrieve data stored at a memory device is performed. Whether the data retrieved from the memory device includes an error that is not correctable is determined. Responsive to determining that the data retrieved from the memory device comprises the error that is not correctable, a buffer in a data path along which a write operation was performed to write the data at the memory device is searched for the data.

Abstract: Methods of forming a semiconductor device are provided. A method according to the present disclosure includes forming, over a workpiece, a dummy gate stack comprising a first semiconductor material, depositing a first dielectric layer over the dummy gate stack using a first process, implanting the workpiece with a second semiconductor material different from the first semiconductor material, annealing the dummy gate stack after the implanting, and replacing the dummy gate stack with a metal gate stack.

Abstract: A method of fabricating a device includes providing a fin element in a device region and forming a dummy gate over the fin element. In some embodiments, the method further includes forming a source/drain feature within a source/drain region adjacent to the dummy gate. In some cases, the source/drain feature includes a bottom region and a top region contacting the bottom region at an interface interposing the top and bottom regions. In some embodiments, the method further includes performing a plurality of dopant implants into the source/drain feature. In some examples, the plurality of dopant implants includes implantation of a first dopant within the bottom region and implantation of a second dopant within the top region. In some embodiments, the first dopant has a first graded doping profile within the bottom region, and the second dopant has a second graded doping profile within the top region.

Abstract: A method includes forming a silicon liner over a semiconductor device, which includes a dummy gate structure disposed over a substrate and S/D features disposed adjacent to the dummy gate structure, where the dummy gate structure traverses a channel region between the S/D features. The method further includes forming an ILD layer over the silicon liner, which includes elemental silicon, introducing a dopant species to the ILD layer, and subsequently removing the dummy gate structure to form a gate trench. Thereafter, the method proceeds to performing a thermal treatment to the doped ILD layer, thereby oxidizing the silicon liner, and forming a metal gate stack in the gate trench and over the oxidized silicon liner.

Abstract: Semiconductor structures and methods for forming the same are provided. The method includes forming a well region in a substrate and forming an anti-punch through region in a top portion of the well region. The method further includes forming a barrier layer over the anti-punch through region and alternately stacking first semiconductor material layers and second semiconductor material layers over the barrier layer. The method further includes patterning the first semiconductor material layers, the second semiconductor material layers, the barrier layer, and the anti-punch through region to form a fin and removing the first semiconductor material layers and the barrier layer to expose the anti-punch through region. The method further includes forming a gate wrapping around the second semiconductor material layers.