Patents by Inventor Pei Yu

Pei Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220208623
    Abstract: A semiconductor device package includes a supporting element, a transparent plate disposed on the supporting element, a semiconductor device disposed under the transparent plate, and a lid surrounding the transparent plate. The supporting element and the transparent plate define a channel.
    Type: Application
    Filed: March 15, 2022
    Publication date: June 30, 2022
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Tsung-Yu LIN, Pei-Yu WANG, Chung-Wei HSU
  • Publication number: 20220208684
    Abstract: An interface of integrated circuit (IC) die includes a plurality of the contact elements formed as a contact element pattern corresponding to a parallel bus. The contact elements are arranged in an array of rows and columns and divided into a transmitting group and a receiving group. The contact elements of the transmitting group have a first contact element sequence and the contact elements of the receiving group have a second contact element sequence, the first contact element sequence is identical to the second contact element sequence. The contact elements with the first contact element sequence and the second contact element sequence are matched when the contact element pattern is geometrically rotated by 180° with respect to a row direction and a column direction.
    Type: Application
    Filed: December 28, 2020
    Publication date: June 30, 2022
    Applicants: Global Unichip Corporation, Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Hao Wang, Ting-Chin Cho, Igor Elkanovich, Amnon Parnass, Chia-Hsiang Chang, Tsai-Ming Yang, Yen-Chung T. Chen, Ting-Hsu Chien, Yuan-Hung Lin, Chao-Ching Huang, Li-Ya Tseng, Pei Yu, Jia-Liang Chen, Yen-Wei Chen, Chung-Kai Wang, Chun-Hsu Chen, Yu-Ju Chang, Li-Hua Lin, Zanyu Yang
  • Publication number: 20220202812
    Abstract: The present invention relates to the use of ligustrazine nitrone derivatives and pharmaceutical composition thereof for the treatment and prevention of diseases of diabetic complications, which include renal anemia. The ligustrazine nitrone derivatives have the structure of the general formula (I). Experimental results indicated that the ligustrazine nitrone derivatives can significantly increase the levels of serum iron and erythropoietin in STZ induced SD rats and spontaneously hypertensive rats, and can be used for treating and preventing renal anemia caused by decrease in renal EPO production and/or concomitant iron deficiency. Therefore, the ligustrazine nitrone derivatives can be made into various dosage forms with a drug carrier. The derivatives can be prepared into various dose forms together with drug carriers.
    Type: Application
    Filed: November 3, 2021
    Publication date: June 30, 2022
    Applicant: QINGDAO HAILAN PHARMACEUTICALS CO., LTD.
    Inventors: Yuqiang Wang, Yewei Sun, Lipeng Xu, Mei Jing, Zaijun Zhang, Gaoxiao Zhang, Pei Yu, Peng Yi
  • Publication number: 20220192906
    Abstract: A transmission device of a hospital bed, the hospital bed includes a body, a head, and a bed end. The transmission device contains: a main motor, a connection rod unit, and a driver. The main motor is disposed on a bottom of the body and includes a socket. The connection rod unit includes a first fixing rod connected to the head and a second fixing rod connected to the bed end. The driver is mounted on the main motor and includes an accommodation space, a driving motor, a reducer, a power cable, and a drive shaft. The first case has a first coupling orifice, and the second case has a second coupling orifice. The power cable is connected between the socket and the driving motor so as to supply a power to the driving motor and to lift or descend the head and the bed end synchronously.
    Type: Application
    Filed: December 20, 2020
    Publication date: June 23, 2022
    Inventor: Pei-Yu Hsu
  • Publication number: 20220199523
    Abstract: Semiconductor devices and method of forming the same are disclosed herein. A semiconductor device according to the present disclosure includes a first dielectric layer having a first top surface and a contact via extending through the first dielectric layer and rising above the first top surface of the first dielectric layer.
    Type: Application
    Filed: March 14, 2022
    Publication date: June 23, 2022
    Inventors: Pei-Yu Wang, Cheng-Ting Chung, Wei Ju Lee
  • Publication number: 20220187149
    Abstract: A spindle shaft device including a shaft, a first torque sensor, and a second torque sensor. The shaft extends along an axial direction and comprises a first side portion, a second side portion, and a central portion located between the first side portion and the second side portion. The central portion has a central torsional rigidity with respect to the axial direction. The first side portion has a first torsional rigidity with respect to the axial direction. The second side portion has a second torsional rigidity with respect to the axial direction. The first torsional rigidity is smaller than the central torsional rigidity. The second torsional rigidity is smaller than the central torsional rigidity. The first torque sensor is disposed on the first side portion. The second torque sensor is disposed on the second side portion.
    Type: Application
    Filed: April 19, 2021
    Publication date: June 16, 2022
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chien-Nan YEH, Pei-Yu CHANG, Shih-Ting LIN, Chao-Ta HUANG
  • Publication number: 20220176372
    Abstract: A cartridge for a bioreactor adapted for accommodating a plurality of objects includes a cartridge main body defining a plurality of spaced-apart accommodating slots for respectively accommodating the objects therein. The cartridge main body includes a retaining portion extending into at least one of the accommodating slots, and adapted to retain a corresponding one of the objects in a corresponding one of the accommodating slots. The retaining portion is pushable to move resiliently in the corresponding one of the accommodating slots.
    Type: Application
    Filed: March 31, 2021
    Publication date: June 9, 2022
    Applicant: GENEREACH BIOTECHNOLOGY CORPORATION
    Inventors: Wen-Shan YANG, Ching-Ko LIN, Chia-Lin HSU, Fu-Chun LI, Pin-Hsing CHOU, Yun-Lung TSAI, Pei-Yu LEE, Hsiao-Fen CHANG
  • Patent number: 11351553
    Abstract: Provided is a heating mechanism for a biochemical reaction device, including: a heat-conducting body including: at least one accommodating groove each including a chamber and an opening communicating with the chamber; a clamping hole, in communication with the opening and for inserting a reaction tube; and at least one heat-conducting block, movably disposed in the chamber and having one end connected with an elastic element and another opposite end provided with an abutting portion, the elastic element enabling the abutting portion of the heat-conducting block to protrude from the opening and locate in the clamping hole; and a temperature control element connected to the heat-conducting body for heating and regulating a temperature of the heat-conducting block.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: June 7, 2022
    Assignee: GENEREACH BIOTECHNOLOGY CORP.
    Inventors: Chun-Ming Lee, Ching-Ko Lin, Yun-Lung Tsai, Pei-Yu Lee, Chen Su, Hsiao-Fen Chang, Fu-Chun Li
  • Patent number: 11356246
    Abstract: The application discloses a data analysis system and a data analysis method. The data analysis system includes a data provider host and a data analysis host. The data provider host is configured to perform a stream cipher algorithm based on raw data to obtain first data. The data analysis host is configured to perform a data analysis based on the first data to obtain an analysis result. The data provider host or the data analysis host is further configured to perform a block cipher algorithm based on the analysis result to obtain second data, and send the second data to an external device. The data provider host is further configured to calculate an attribute-value correspondence between the raw data and the second data, and send the attribute-value correspondence to the external device.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: June 7, 2022
    Assignee: PEGATRON CORPORATION
    Inventors: Wei-Cheng Lin, Pei-Yu Chen, Jia-Shiung Yang
  • Publication number: 20220163876
    Abstract: A color wheel module and a projector are provided. The projector includes the color wheel module, and the color wheel module includes a disk, an isolation framework, an assembly member, and a colloidal filler. The disk is configured to rotate around an axis. The isolation framework and the assembly member are disposed on the disk. The isolation framework is located between the disk and the assembly member. An air layer is formed between the assembly member and the isolation framework. The colloidal filler is disposed on the assembly member.
    Type: Application
    Filed: November 9, 2021
    Publication date: May 26, 2022
    Applicant: Coretronic Corporation
    Inventor: Pei-Yu Hsu
  • Publication number: 20220165885
    Abstract: In an embodiment, a device includes: a first interconnect structure including metallization patterns; a second interconnect structure including a power rail; a device layer between the first interconnect structure and the second interconnect structure, the device layer including a first transistor, the first transistor including an epitaxial source/drain region; and a conductive via extending through the device layer, the conductive via connecting the power rail to the metallization patterns, the conductive via contacting the epitaxial source/drain region.
    Type: Application
    Filed: February 14, 2022
    Publication date: May 26, 2022
    Inventors: Yi-Bo Liao, Yu-Xuan Huang, Pei-Yu Wang, Cheng-Ting Chung, Ching-Wei Tsai, Hou-Yu Chen
  • Patent number: 11335776
    Abstract: A device includes a first semiconductor strip protruding from a substrate, a second semiconductor strip protruding from the substrate, an isolation material surrounding the first semiconductor strip and the second semiconductor strip, a nanosheet structure over the first semiconductor strip, wherein the nanosheet structure is separated from the first semiconductor strip by a first gate structure including a gate electrode material, wherein the first gate structure partially surrounds the nanosheet structure, and a first semiconductor channel region and a semiconductor second channel region over the second semiconductor strip, wherein the first semiconductor channel region is separated from the second semiconductor channel region by a second gate structure including the gate electrode material, wherein the second gate structure extends on a top surface of the second semiconductor strip.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: May 17, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Yu Wang, Pei-Hsun Wang
  • Patent number: 11326167
    Abstract: In some aspects, the invention provides a method of treating atherosclerosis in a subject. The method comprises administering to the subject an agent that increases the activity or level of a let-7 miRNA or an agent that decreases activity or level of a TGF? signaling polypeptide in an endothelial cell in the subject. In some embodiments, the subject is administered an additional agent comprising a therapeutically effective amount of rapamycin or any derivative thereof. In some embodiments, the agent is a let-7 miRNA. In some other aspects, the invention provides a pharmaceutical composition comprising a let-7 miRNA. In some embodiments, the let-7 miRNA is encapsulated in a nanoparticle formulated for selective delivery to an endothelial cell.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: May 10, 2022
    Assignee: Yale University
    Inventors: Michael Simons, Pei-Yu Chen
  • Publication number: 20220140142
    Abstract: A semiconductor structure includes a source/drain (S/D) feature disposed in a semiconductor layer, a metal gate stack (MG) disposed in a first interlayer dielectric (ILD) layer and adjacent to the S/D feature, a second ILD layer disposed over the MG, and an S/D contact disposed over the S/D feature. The semiconductor structure further includes an air gap disposed between a sidewall of a bottom portion of the S/D contact and the first ILD layer, where a sidewall of a top portion of the S/D contact is in direct contact with the second ILD layer.
    Type: Application
    Filed: January 14, 2022
    Publication date: May 5, 2022
    Inventors: Chao-Hsun Wang, Chen-Ming Lee, Kuo-Yi Chao, Mei-Yun Wang, Pei-Yu Chou, Kuo-Ju Chen
  • Publication number: 20220131004
    Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first gate structure disposed over a first backside dielectric feature, a second gate structure disposed over a second backside dielectric feature, a gate cut feature extending continuously from between the first gate structure and the second gate structure to between the first backside dielectric feature and the second backside dielectric feature, and a liner disposed between the gate cut feature and the first backside dielectric feature and between the gate cut feature and the second backside dielectric feature.
    Type: Application
    Filed: February 1, 2021
    Publication date: April 28, 2022
    Inventors: Chun-Yuan Chen, Pei-Yu Wang, Huan-Chieh Su, Yi-Hsun Chiu, Cheng-Chi Chuang, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
  • Publication number: 20220123115
    Abstract: A semiconductor device a method of forming the same are provided. A semiconductor device includes a gate stack over a substrate. A first dielectric layer is over the gate stack. The first dielectric layer includes a first material. A second dielectric layer is over the first dielectric layer. The second dielectric layer includes a second material different from the first material. A first conductive feature is adjacent the gate stack. A second conductive feature is over and in physical contact with a topmost surface of the first conductive feature. A bottommost surface of the second conductive feature is in physical contact with a topmost surface of the second dielectric layer.
    Type: Application
    Filed: March 5, 2021
    Publication date: April 21, 2022
    Inventors: Pei-Yu Chou, Jr-Hung Li, Tze-Liang Lee
  • Patent number: 11289417
    Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Pei-Yu Chou, Jr-Hung Li, Liang-Yin Chen, Su-Hao Liu, Tze-Liang Lee, Meng-Han Chou, Kuo-Ju Chen, Huicheng Chang, Tsai-Jung Ho, Tzu-Yang Ho
  • Publication number: 20220093766
    Abstract: The present disclosure relates to a semiconductor device having a backside source/drain contact, and method for forming the device. The semiconductor device includes a source/drain feature having a top surface and a bottom surface, a first silicide layer formed in contact with the top surface of the source/drain feature, a first conductive feature formed on the first silicide layer, and a second conductive feature having a body portion and a first sidewall portion extending from the body portion, wherein the body portion is below the bottom surface of the source/drain feature, and the first sidewall portion is in contact with the first conductive feature.
    Type: Application
    Filed: December 6, 2021
    Publication date: March 24, 2022
    Inventors: Chun-Yuan CHEN, Pei-Yu WANG, Huan-Chieh SU, Chih-Hao WANG
  • Patent number: 11276616
    Abstract: A semiconductor device package includes a supporting element, a transparent plate disposed on the supporting element, a semiconductor device disposed under the transparent plate, and a lid surrounding the transparent plate. The supporting element and the transparent plate define a channel.
    Type: Grant
    Filed: April 16, 2020
    Date of Patent: March 15, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Tsung-Yu Lin, Pei-Yu Wang, Chung-Wei Hsu
  • Patent number: D950268
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: May 3, 2022
    Inventor: Pei-Yu Hsu