Abstract: In some aspects, the invention provides a method of treating atherosclerosis in a subject. The method comprises administering to the subject an agent that increases the activity or level of a let-7 miRNA or an agent that decreases activity or level of a TGF? signaling polypeptide in an endothelial cell in the subject. In some embodiments, the subject is administered an additional agent comprising a therapeutically effective amount of rapamycin or any derivative thereof. In some embodiments, the agent is a let-7 miRNA. In some other aspects, the invention provides a pharmaceutical composition comprising a let-7 miRNA. In some embodiments, the let-7 miRNA is encapsulated in a nanoparticle formulated for selective delivery to an endothelial cell.

Abstract: To improve the accuracy and efficiency of object detection through computer digital image analysis, the detection of some objects can inform the sub-portion of the digital image to which subsequent computer digital image analysis is directed to detect other objects. In such a manner object detection can be made more efficient by limiting the image area of a digital image that is analyzed. Such efficiencies can represent both computational efficiencies and communicational efficiencies arising due to the smaller quantity of digital image data that is analyzed. Additionally, the detection of some objects can render the detection of other objects more accurate by adjusting confidence thresholds based on the detection of those related objects. Relationships between objects can be utilized to inform both the image area on which subsequent object detection is performed and the confidence level of such subsequent object detection.

Abstract: A communication system and an operation method thereof are provided. The transmitting device transmits the current data unit and the transmitted data verification information to the receiving device through the communication interface, and records the current data unit in an FIFO buffer. The receiving device counts the received data identification value by itself based on the current data unit received from the communication interface. The receiving device uses the received data identification value and the transmitted data verification information to check whether the current data unit received from the communication interface has errors. When the current data unit is in error, the receiving device returns an error flag to the transmitting device so that the transmitting device suspends the transmission of the new data unit, and transmits the buffered data unit recorded in the FIFO buffer to the receiving device through the communication interface.

Abstract: A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.

Abstract: A demand forecasting method and a demand forecasting apparatus are provided. A preliminary prediction amount corresponding to a part number is obtained based on historical demand data. A demand probability of the part number is calculated based on the preliminary prediction amount. A prediction demand amount corresponding to the part number is obtained based on the historical demand data, the preliminary prediction amount and the demand probability.

Abstract: In certain embodiments a device is provided for electrorotation flow. In certain embodiments the device comprises a microfluidic channel comprising a plurality of electrodes disposed to provide dielectrophoretic (DEP) forces that are perpendicular to hydrodynamic flows along the channel; and a fluid within the channel providing the hydrodynamic flow along the channel; wherein the device is configured to apply focusing voltages to the electrodes that provide an electric field minimum in the channel and that focus cells, particles, and/or molecules or molecular complexes within the channel; and where the device is configured to apply rotation-inducing voltages to the electrodes that induce rotation of the cells, particles, molecules and/or molecular complexes as they flow through the channel.

Abstract: Methods of forming semiconductor devices are provided. The methods include: forming a trench in a substrate, wherein the trench includes a defect protruding from a bottom surface of the trench; forming a flowable material on the substrate to at least partially cover the defect; performing an etching process to reduce the height of the defect; and removing the flowable material.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.

Abstract: A connecting device for a push rod of a bed frame is configured to connect a bedside drive rod and a bed-end drive rod of the bed frame. The connecting device contains: a fixing sheet, a coupling sheet, and at least one first locking element. The fixing sheet includes a first connection orifice fitted with the bedside drive rod or the bed-end drive rod, and at least one first lock orifice. The coupling sheet includes at least one second lock orifice and a joining portion. The at least one first locking element is inserted through the at least one first lock orifice of the fixing sheet and the at least one second lock orifice of the coupling sheet so as to connect the fixing sheet and the coupling sheet.

Abstract: A spindle shaft device including a shaft, a first torque sensor, and a second torque sensor. The shaft extends along an axial direction and comprises a first side portion, a second side portion, and a central portion located between the first side portion and the second side portion. The central portion has a central torsional rigidity with respect to the axial direction. The first side portion has a first torsional rigidity with respect to the axial direction. The second side portion has a second torsional rigidity with respect to the axial direction. The first torsional rigidity is smaller than the central torsional rigidity. The second torsional rigidity is smaller than the central torsional rigidity. The first torque sensor is disposed on the first side portion. The second torque sensor is disposed on the second side portion.

Abstract: A transmission device of a hospital bed contains: a main motor, a connection rod unit, a gear unit, and a driver. The gear unit includes a first coupling post, a second coupling post, a first gear, a second gear, a third gear, a third coupling post, and a fourth gear. The driver includes a first case, a second case, a first driving motor, a second driving motor, and a power cable. The first case has a first chamber, a third chamber configured to accommodate the first driving motor, and a fourth chamber configured to accommodate the second driving motor. The second case has a second chamber. The first coupling post, the second coupling post, the first gear, the second gear and the third gear are accommodated in the first chamber. The third coupling post and the fourth gear are accommodated in the second chamber.

Abstract: A transmission device for lifting a sickbed contains a first casing, a second casing, a power input assembly, a power output assembly, and multiple screw elements. The first casing includes a first rotatable connection portion, a second rotatable connection portion, a first space, and multiple locking orifices. The second casing includes a third rotatable connection portion, a fourth rotatable connection portion, a second space, and multiple coupling orifices. The power input assembly includes an input shaft and a first bevel gear. The power output assembly includes an output shaft and a second bevel gear. The multiple screw elements are inserted through the multiple coupling orifices of the second casing to screw with the multiple locking orifices of the first casing.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first gate structure disposed over a first backside dielectric feature, a second gate structure disposed over a second backside dielectric feature, a gate cut feature extending continuously from between the first gate structure and the second gate structure to between the first backside dielectric feature and the second backside dielectric feature, and a liner disposed between the gate cut feature and the first backside dielectric feature and between the gate cut feature and the second backside dielectric feature.

Abstract: In an embodiment, a device includes: a power rail contact; an isolation region on the power rail contact; a first dielectric fin on the isolation region; a second dielectric fin adjacent the isolation region and the power rail contact; a first source/drain region on the second dielectric fin; and a source/drain contact between the first source/drain region and the first dielectric fin, the source/drain contact contacting a top surface of the first source/drain region, a side surface of the first source/drain region, and a top surface of the power rail contact.

Abstract: A light-emitting device includes a first carrier, which includes a side surface between a first surface and a second surface, upper conductive pads on the first surface, and lower conductive pads under the second surface; a RDL pixel package includes a RDL which includes bonding pads and bottom electrodes, and the light-emitting units on the RDL, and connected to the bonding pads. A light-transmitting layer on the RDL and covers the light-emitting units, an upper surface, a lower surface, and a lateral surface between the upper surface and the lower surface. The RDL pixel package is on the first surface and electrically connected to the upper conductive pads. A protective layer covers the first surface and contacting the side surface of the RDL pixel package. The lower electrodes and the upper conductive pads are connected, and the distance between two adjacent bonding pads is less than 30 ?m.

Abstract: An IC structure includes a source epitaxial structure, a drain epitaxial structure, a first silicide region, a second silicide region, a source contact, a backside via rail, a drain contact, and a front-side interconnection structure. The first silicide region is on a front-side surface, a first sidewall of the source epitaxial structure, and a second sidewall of the source epitaxial structure. The second silicide region is on a front-side surface of the drain epitaxial structure. The source contact is in contact with the first silicide region and has a protrusion extending past a backside surface of the source epitaxial structure. The backside via rail is in contact with the protrusion of the source contact. The drain contact is in contact with the second silicide region. The front-side interconnection structure is on a front-side surface of the source contact and a front-side surface of the drain contact.

Abstract: Methods of forming semiconductor devices are provided. The methods include: forming a trench in a substrate, wherein the trench includes a defect protruding from a bottom surface of the trench; forming a flowable material on the substrate to at least partially cover the defect; performing an etching process to reduce the height of the defect; and removing the flowable material.

Abstract: A semiconductor structure includes an epitaxial region having a front side and a backside. The semiconductor structure includes an amorphous layer formed over the backside of the epitaxial region, wherein the amorphous layer includes silicon. The semiconductor structure includes a first silicide layer formed over the amorphous layer. The semiconductor structure includes a first metal contact formed over the first silicide layer.

Abstract: In some examples, a system includes a network managed by a service provider and configured to provide access to one or more objects to a set of tenants each having one or more users, the service provider and the set of tenants being part of a set of entities that form a hierarchy, and a controller having access to the network. The controller is configured to obtain data indicative of a set of parameters, where the data indicative of the set of parameters is associated with an owner entity of the set of entities, generate a rule which incorporates the set of parameters, where the rule enables the controller to control access to an object of the one or more objects, and add the rule to a rules database, wherein the rules database is accessible to the controller.

Abstract: A method of configuring a display device interface (DDI) detects a trigger signal, generated by a display device. If the trigger signal is associated with a power on event, a full configuration of the DDI is performed, including loading display device capability information provided by the display device into DDI configuration registers and setting one or more DDI configuration parameters accordingly. If the trigger signal is associated with resume event, rather than a power on event, a modified fast link resume operation may be performed to route the trigger signal to a controller configured to explicitly write display device capability information to the appropriate DDI configuration registers before setting the corresponding DDI configuration parameter accordingly. The DDI may include a re-timer, between the DDI source and sink, configured to snoop the explicit write transaction such that the re-timer configuration is also updated.