Abstract: A nitride semiconductor structure including a silicon substrate, a nucleation layer, a discontinuous defect blocking layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate, wherein the nucleation layer has a defect density d1. A portion of the nucleation layer is covered by the discontinuous defect blocking layer. The buffer layer is disposed on the discontinuous defect blocking layer and a portion of the nucleation layer that is not covered by the discontinuous defect blocking layer. The nitride semiconductor layer is disposed on the buffer layer. A ratio of a defect density d2 of the nitride semiconductor layer to the defect density d1 of the nucleation layer is less than or equal to about 0.5, at a location where about 1 micrometer above the interface between the nitride semiconductor layer and the buffer layer.

Abstract: Embodiments of a vending machine are disclosed that can comprise one or more horizontally oriented shelves for supporting products to be vended, a plurality of vertically oriented dividers coupled to the shelves, a plurality of location markers located on the dividers and/or on the shelves, and an optical recognition module configured to optically recognize the location markers and to determine positions of the location markers and products relative to the shelves. In some embodiments, the optical recognition module can recognize the products by comparing images of the products to stored product images.

Abstract: A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor stacked layer, a light-emitting layer and a second type nitride semiconductor layer. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer. The first type nitride semiconductor stacked layer is disposed on the buffer layer. The first type nitride semiconductor stacked layer being a plurality of lattice mismatch stacked layers includes a plurality of first nitride semiconductor layers and a plurality of second nitride semiconductor layers. The first nitride semiconductor layers and the second nitride semiconductor layers are stacked alternately, and the first nitride semiconductor layers and the second nitride semiconductor layers are different material. The light-emitting layer is disposed on the first type nitride semiconductor stacked layer.

Abstract: A nitride semiconductor device includes a silicon substrate, a nucleation layer, a first buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The first buffer layer is disposed on the nucleation layer. The first buffer layer includes a dopant and Gallium, and an atomic radius of the dopant is larger than an atomic radius of Gallium. The first type nitride semiconductor layer is disposed over the first buffer layer. The light-emitting layer is disposed on the first type nitride semiconductor layer. The second type nitride semiconductor layer is disposed on the light-emitting layer.

Abstract: A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer. The first type nitride semiconductor layer is disposed on the buffer layer. The first type nitride semiconductor layer is doped with a first type dopant, at least one of the buffer layer and the first type nitride semiconductor layer comprises a codopant distributed therein, and an atomic radius of the codopant is larger than an atomic radius of the first type dopant. The light-emitting layer is disposed on the first type nitride semiconductor layer. The second type nitride semiconductor layer is disposed on the light-emitting layer, the second type nitride semiconductor layer comprising a second type dopant.

Abstract: A method for capturing an image, suitable for an image capturing apparatus with a flash lamp, is provided. In the invention, a pre-flash image is captured when a pre-flash is fired by the flash lamp. An intensity of a main flash is estimated. Whether the pre-flash image is overexposed is determined for calculating an overexposure number. A brightness comparison data is looked up according to the overexposure number and a brightness target value, so as to reduce a photosensitivity. A raw image is captured according to the reduced photosensitivity when the main flash is fired by the flash lamp.

Abstract: A method for making a nonvolatile memory device includes the following steps. A conductive structure is formed, wherein the conductive structure has a first top portion. The first top portion is converted into a second top portion having a domed surface.

Abstract: A system, method, and layout for a semiconductor integrated circuit device allows for improved scaling down of various back-end structures, which can include contacts and other metal interconnection structures. The resulting structures can include a semiconductor substrate, a buried diffusion region formed on the semiconductor substrate, and at least one of a silicide film, for example tungsten silicide (WSix), and a self-aligned silicide (salicide) film, for example cobalt silicide (CoSi) and/or nickel silicide (NiSi), above the buried diffusion (BD) layer. The semiconductor integrated circuit can also include a memory gate structure formed over at least a portion of the contact layer.

Abstract: A non-volatile memory structure including a substrate, stacked patterns and stress patterns is provided. The stacked patterns are disposed on the substrate. Each of the stacked patterns includes a charge storage structure and a gate from bottom to top. Here, the charge storage structure at least includes a charge storage layer. The stress patterns are disposed on the substrate between the two adjacent stacked patterns, respectively.

Abstract: Embodiments of a vending machine are disclosed that can comprise one or more horizontally oriented shelves for supporting products to be vended, a plurality of vertically oriented dividers coupled to the shelves, a plurality of location markers located on the dividers and/or on the shelves, and an optical recognition module configured to optically recognize the location markers and to determine positions of the location markers and products relative to the shelves. In some embodiments, the optical recognition module can recognize the products by comparing images of the products to stored product images.

Abstract: A memory array including a plurality of memory cells, a plurality of word lines, a dummy word line, and a plug is provided. Each word line is coupled to corresponding memory cells. A dummy word line is directly adjacent to an outmost word line of the plurality of word lines. The plug is located between the dummy word line and the outmost word line.

Abstract: A method for assisting in focal length detection is applicable to a digital camera having the flash. The method includes the following steps. First, the flash of the digital camera is actuated and a first image is captured. Afterwards, a characteristic exposure value of the first image is calculated. A focus range comparison table is looked up according to the characteristic exposure value to obtain an initial focus position. Then, a focus procedure is performed according to the initial focus position to obtain a target focal length.

Abstract: A nitride read-only memory cell and a method of manufacturing the same are provided. First, a substrate is provided, and a first oxide layer is formed on the substrate. Next, a nitride layer is deposited on the first oxide layer via a first gas and a second gas. The flow ratio of the first gas to the second gas is 2:1. After that, a second oxide layer is formed on the nitride layer. Then, a bit-line region is formed at the substrate. Afterward, a gate is formed on the second oxide layer. The first oxide layer, nitride layer, the second oxide layer and the gate compose a stack structure of the cell. Further, a spacer is formed on the side-wall of the stack structure.

Abstract: A method for capturing an image, suitable for an image capturing apparatus with a flash lamp, is provided. In the invention, a pre-flash image is captured when a pre-flash is fired by the flash lamp. An intensity of a main flash is estimated. Whether the pre-flash image is overexposed is determined for calculating an overexposure number. A brightness comparison data is looked up according to the overexposure number and a brightness target value, so as to reduce a photosensitivity. A raw image is captured according to the reduced photosensitivity when the main flash is fired by the flash lamp.

Abstract: A method for adjusting brightness of an image, suitable for an image capturing apparatus with a flash lamp, is provided. In the method, an intensity of a main flash of the flash lamp is raised, and a sensitivity is reduced. When the main flash is fired by the flash lamp, a raw image is captured according to the reduced sensitivity for calculating a brightness mean value. A gain ratio is calculated according to the brightness mean value and a brightness target, so as to use the gain ratio to compensate the brightness of the raw image.

Abstract: A method for making a nonvolatile memory device includes the following steps. A conductive structure is formed, wherein the conductive structure has a first top portion. The first top portion is converted into a second top portion having a domed surface.

Abstract: A method for adjusting brightness of an image, suitable for an image capturing apparatus with a flash lamp, is provided. In the method, an intensity of a main flash of the flash lamp is raised, and a sensitivity is reduced. When the main flash is fired by the flash lamp, a raw image is captured according to the reduced sensitivity for calculating a brightness mean value. A gain ratio is calculated according to the brightness mean value and a brightness target, so as to use the gain ratio to compensate the brightness of the raw image.

Abstract: A plasma processing system for processing a wafer is provided. The system includes an electrostatic chuck (ESC) positioned inside a plasma processing chamber and configured to support the wafer. The ESC includes a positive terminal for providing a first force to the wafer and a negative terminal for providing a second force to the wafer. The system also includes a first circuit arrangement configured to measure at least a first voltage for determining a value of a positive load current applied to the positive terminal. The system further includes a second circuit arrangement configured to measure at least a second voltage for determining a value of a negative load current applied to the negative terminal. The system yet also includes circuitry configured to adjust a bias voltage using the values of the positive load current and the negative load current for balancing the first force and the second force.

Abstract: A memory array including a plurality of memory cells, a plurality of word lines, a dummy word line, and a plug is provided. Each word line is coupled to corresponding memory cells. A dummy word line is directly adjacent to an outmost word line of the plurality of word lines. The plug is located between the dummy word line and the outmost word line.

Abstract: A method for adjusting photosensitiveness is able to determine a relative distance of an object in an image capture area through images captured before and after pre-flash of a flash lamp, so that the relative distance serves as a reference for adjusting current photosensitiveness of the digital camera, thereby capturing an image having better quality in a status that the flash lamp provides a fill light.