Abstract: In a method of manufacturing a semiconductor device, a fin structure including a stacked layer of first and second semiconductor layers and a hard mask layer over the stacked layer is formed. A sacrificial cladding layer is formed over at least sidewalls of the exposed hard mask layer and stacked layer. An etching is performed to remove lateral portions of the sacrificial cladding layer, thereby leaving the sacrificial cladding layer on sidewalls of the exposed hard mask layer and stacked layer. A first dielectric layer and a second dielectric layer made of a different material than the first dielectric layer are formed. The second dielectric layer is recessed, and a third dielectric layer made of a different material than the second dielectric layer is formed on the recessed second dielectric layer. During the etching operation, a protection layer is formed over the sacrificial cladding layer.

Abstract: A bidirectional electrostatic discharge protection device includes a first transient voltage suppressor chip, a second transient voltage suppressor chip, a first conductive wire, and a second conductive wire. The first transient voltage suppressor chip includes a first diode and a first bipolar junction transistor. The first diode and the first bipolar junction transistor are electrically connected to a first pin. The second transient voltage suppressor chip includes a second diode and a second bipolar junction transistor. The second diode and the second bipolar junction transistor are electrically connected to a second pin. The first conductive wire is electrically connected between the first diode and the second bipolar junction transistor. The second conductive wire is electrically connected between the second diode and the first bipolar junction transistor.

Abstract: The present disclosure relates an integrated chip. The integrated chip includes a first interconnect disposed within an inter-level dielectric (ILD) structure over a substrate. A barrier layer is disposed along sidewalls of the ILD structure. The barrier layer has sidewalls defining an opening over the first interconnect. A second interconnect is disposed on the barrier layer. The second interconnect extends through the opening in the barrier layer and to the first interconnect.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: A method for manufacturing semiconductor device structure includes providing a substrate having a surface; forming a first gate structure on the surface; forming a second gate structure on the surface; forming a first well region in the substrate and between the first gate structure and the second gate structure; forming a conductive contact within a trench between the first gate structure and the second gate structure; forming a first structure in the first well region, wherein the first structure tapers away from a bottom portion of the conductive contact.

Abstract: A compound of Formula (I) is provided: (I) where the variables are defined herein.

Abstract: This document provides butyrylcholinesterases having an enhanced ability to hydrolyze acyl ghrelin as well as nucleic acids encoding such butyrylcholinesterases. This document also provides methods and materials for treating obesity and/or aggression. For example, methods for administering a nucleic acid encoding a wild-type or mutant butyrylcholinesterase having the ability to hydrolyze acyl ghrelin to a mammal under conditions wherein the level of acyl ghrelin within the mammal is reduced, under conditions wherein the rate of body weight gain of the mammal is reduced, under conditions wherein the mammal’s level of aggression is reduced, and/or under conditions wherein the mammal’s rate of developing stress-induced tissue damage are provided.

Abstract: An electrical male terminal of this invention includes a clamp or crimp area, a main body, and a blade. Protruding members and support members of the main body act as overstress protection. A panel shield member protects a protruding guide member. In another embodiment of this invention, a protruding member extends from a first support member of the main body, and a cut-out portion at the lower portion of the main body accommodates therein the protruding member to prevent the tang member fr©m inadvertently or accidentally rotating relative to the lower portion of the main body.

Abstract: An automatic large-mass-weight handling system comprises: a weight picking device (10) configured for picking up and holding a large-mass-weight (75); a driving device (80) for providing a driving power; a weight transferring device (50) comprising a first horizontal rail (52) and a vertical rail (62) assembled to the first horizontal rail (52) in a way of being movable along the first horizontal rail (52), the first horizontal rail (52) extending in a first horizontal direction, the vertical rail (62) extending in a vertical direction perpendicular to the first horizontal direction, and the weight picking device (10) being assembled to the vertical rail (62); and a control unit for controlling the movement of the weight picking device (10); wherein the control unit controls the driving device (80) in a way that the weight picking device (10) is able to be moved automatically in the first horizontal direction and is able to be moved automatically in the vertical direction.

Abstract: The present disclosure relates to an integrated chip that includes a substrate, a first metal line, and a hybrid metal line. The first metal line includes a first metal material and is within a first interlayer dielectric (ILD) layer over the substrate. The hybrid metal line is also within the first ILD layer. The hybrid metal line includes a pair of first metal segments that comprise the first metal material. The hybrid metal line further includes a second metal segment that comprises a second metal material that is different from the first metal material. The second metal segment is laterally between the pair of first metal segments.

Abstract: A cooling system of a magnetic resonance apparatus is disclosed. In the cooling system, a first cooling device and a second cooling device are used to realize a secondary step of cooling of a circulating fluid without energy consumption, thereby reducing the operating energy consumption of the cooling system. In addition, a magnetic resonance apparatus comprising the cooling system is further provided.

Abstract: A method for determining phase locking of critical arc light includes: step 1: monitoring and collecting light radiation intensity of an arc inside a switch cabinet in real time, and converting the collected light radiation intensity into an electrical signal; step 2: extracting a power-frequency fundamental wave of the electrical signal, comparing an amplitude of the power-frequency fundamental wave of the electrical signal with a first threshold, and generating a pre-warning signal based on a comparison result of the first threshold; step 3: comparing the amplitude of the power-frequency fundamental wave of the electrical signal with a second threshold voltage, and generating a control signal based on a comparison result of the second threshold voltage and a protection time threshold; and step 4: protecting the switch cabinet under the critical arc light environment based on the pre-warning signal and the control signal.

Abstract: Silica-based biomolecule carriers, compositions comprising the same and preparation methods and uses thereof for delivering biomolecules into a cell are provided. The silica-based biomolecule carrier comprises a porous core; a first bioactive moiety; a second bioactive moiety functionally associated with the first bioactive moiety; and linkers for respectively conjugating the first bioactive moiety and the second bioactive moiety to the porous core.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a first resistive element and a second resistive element over the semiconductor substrate. A topmost surface of the second resistive element is higher than a topmost surface of the first resistive element. The semiconductor device structure also includes a first conductive feature and a second conductive feature electrically connected to the first resistive element. The second resistive element is between and electrically isolated from the first conductive feature and the second conductive feature. The semiconductor device structure further includes a first dielectric layer surrounding the first conductive feature and the second conductive feature.

Abstract: A data transmission method includes obtaining a first data packet generated by a first application running on a user equipment; using the first data packet as a to-be-transmitted data packet on a first logical channel (LC) when the first data packet carries a first identifier indicating that the first data packet needs to be sent on an air interface according to a first transmission quality requirement; sending, to a base station, a first buffer status report (BSR) that includes indication information of the first transmission quality requirement for allocating a first air interface resource to the first LC according to the first transmission quality requirement; and sending, to the base station, the to-be-transmitted data packet on the first LC using the first air interface resource.

Abstract: An auxiliary force control system and a method for a power-assisted bicycle are disclosed. The system has a sensing device, a mobile computing device, a first controller, and a second controller. The sensing device receives a riding torque and a riding speed. The mobile computing device generates a tuning factor via a first and a second ANN model. Personal data and historical riding data are input data of the first ANN model. Predicted grade outputted by the first ANN model, the personal data, and environment data are input data of the second ANN model. The first controller generates a final factor according to the tuning factor, a mode factor, and a gap-range factor. The second controller outputs a motor driver current according to a parameter of target output of the motor, which is generated based on the final factor, to the motor to drive the motor.

Abstract: A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.

Abstract: An information handling resource blank configured to populate a slot of an information handling system in lieu of an information handling resource may include a form factor having at least some features in common with that of the information handling resource and one or more false fans mechanically coupled to the form factor. Each of the one or more false fans may be configured to have a first airflow impedance when airflow through such false fan is below a threshold airflow and have a second airflow impedance when airflow through such false fan is above the threshold airflow.

Abstract: Compounds with KRAS G12C inhibitory active are disclosed and methods of using the same to treat a cancer comprising a K-Ras G12C mutation.

Abstract: The present invention relates to a pyrazolo[1,5-a]pyridine derivative, a preparation method therefor, and a composition and a use thereof. Specifically, the present invention relates to the compound of formula (I) and the use thereof for the treatment and/or prevention of wild type, gene-fusion type (including but not limited to KIF5B, CCDC6 and NCOA4) and mutant type (including but not limited to V804, G810 and M918) RET kinases-related diseases, including diseases or conditions mediated by RET kinase.