Patents by Inventor Ping Chen

Ping Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230160281
    Abstract: Compositions and methods for the use in scale inhibitor squeeze treatments are provided. In some embodiments the present disclosure provides a method including introducing a pre-flush fluid into at least a portion of a subterranean formation, the pre-flush fluid including a choline chloride chemical additive; and introducing a treatment fluid including a scale inhibitor into the portion of the subterranean formation after at least a portion of the pre-flush fluid has been introduced into the portion of the subterranean formation.
    Type: Application
    Filed: January 10, 2023
    Publication date: May 25, 2023
    Inventors: Ping CHEN, Tawfik Hamoud AL-GHAMDI, Zhiwei Yue, Thomas HAGEN, Mohamed Hassan HAMAM, Hicham EL HAJJ
  • Patent number: 11658241
    Abstract: An integrated circuit includes a trench gate MOSFET including MOSFET cells. Each MOSFET cell includes an active trench gate in an n-epitaxial layer oriented in a first direction with a polysilicon gate over a lower polysilicon portion. P-type body regions are between trench gates and are separated by an n-epitaxial region. N-type source regions are located over the p-type regions. A gate dielectric layer is between the polysilicon gates and the body regions. A metal-containing layer contacts the n-epitaxial region to provide an anode of an embedded Schottky diode. A dielectric layer over the n-epitaxial layer has metal contacts therethrough connecting to the n-type source regions, to the p-type body regions, and to the anode of the Schottky diode.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: May 23, 2023
    Assignee: Texas Instruments Incorporated
    Inventors: Sunglyong Kim, Seetharaman Sridhar, Hong Yang, Ya Ping Chen, Thomas Eugene Grebs
  • Patent number: 11654461
    Abstract: A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: May 23, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Jen Hsiao, Ya-Ping Chen, Chien-Hung Lin, Wen-Pin Liu, Chin-Wen Chen
  • Patent number: 11658426
    Abstract: An Insulation Displacement Contact Compliant connector system (IDCC) which includes a housing, header pins, and a Printed Circuit Board (PCB). Each header pin has at least a single barb to be retained into the housing. Each pin has a blade for contacting a wire. A compliant feature on the pin retains itself into holes in the PCB. The housing has a negative space similarly shaped to the pin. The housing includes a strain relief which provides a lead-in for a wire. When the system is fully assembled, the pins reside in the housing, and exit through the housing and into and through respective holes in the PCB. A wire can be inserted into the housing once the pins reside in the housing. There are several options for the assembly process including a) a pin-to-housing insertion process; b) a housing assembly-to-PCB process or a connector-to-PCB process; and c) a wired housing assembly-to-PCB assembly process or a wire harness-to-PCB assembly process.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: May 23, 2023
    Assignee: J.S.T. CORPORATION
    Inventors: Joseph Txarola, Gwendolyn Upson, Ping Chen
  • Patent number: 11657193
    Abstract: The invention discloses a mechanics calculation method of drill bit tooth considering rock dynamic strength and mixed crushing mode, including: Step S1: selecting a target drill bit tooth and a target rock, and determining a type of target drill bit tooth, a geometry of the target drill bit tooth, a rock type and rock parameters of the target rock; Step S2: calculating a horizontal cutting force of the target drill bit tooth according to a horizontal cutting mechanics calculation method of drill bit tooth; Step S3: calculating a vertical penetration force of the target drill bit tooth according to a vertical penetration mechanics calculation method of drill bit tooth; Step S4: calculating a resultant force experienced by the target drill bit tooth according to a resultant force calculation method of drill bit tooth. The invention provides a calculation method for accurately obtaining drill bit tooth mechanics under different working conditions.
    Type: Grant
    Filed: July 15, 2022
    Date of Patent: May 23, 2023
    Assignee: SOUTHWEST PETROLEUM UNIVERSITY
    Inventors: Guangjian Dong, Ping Chen, Jianhong Fu, Yingxin Yang
  • Publication number: 20230156453
    Abstract: A method performed by performed by an exposure node having a first identity in a first network domain in a telecommunications network is provided. The method includes initiating a request towards a first network node for a subscription to an event of a communication device. The request includes subscription information for a common network exposure in at least two network domains. The method further includes receiving a response from the first network node. The response includes at least one of: a first confirmation that the event will be reported to the exposure node for a second network domain for the common network exposure and a second confirmation that the event will be reported to the exposure node for the first network domain. The second confirmation omits an indication of the common network exposure. Methods performed by a first network node are also provided.
    Type: Application
    Filed: March 30, 2021
    Publication date: May 18, 2023
    Inventors: Emiliano MERINO VAZQUEZ, Beatriz MAROTO GIL, Jingrui TAO, Ping CHEN, Cristina RUIZ BALMASEDA, David CASTELLANOS ZAMORA
  • Patent number: 11649240
    Abstract: The present invention provides a compound having the structure: wherein R1, R2, R3, R4, and R5 are each independently H, halogen, CF3 or C1-C4 alkyl, wherein two or more of R1, R2, R3, R4, or R5 are other than H; R6 is H, OH, or halogen; and B is a substituted or unsubstituted heterobicycle, wherein when R1 is CF3, R2 is H, R3 is F, R4 is H, and R5 is H, or R1 is H, R2 is CF3, R3 is H, R4 is CF3, and R5 is H, or R1 is Cl, R2 is H, R3 is H, R4 is F, and R5 is H, or R1 is CF3, R2 is H, R3 is F, R4 is H, and R5 is H, or R1 is CF3, R2 is F, R3 is H, R4 is H, and R5 is H, or R1 is Cl, R2 is F, R3 is H, R4 is H, and R5 is H, then B is other than or a pharmaceutically acceptable salt thereof.
    Type: Grant
    Filed: November 16, 2020
    Date of Patent: May 16, 2023
    Assignee: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
    Inventors: Konstantin Petrukhin, Christopher Cioffi, Graham Johnson, Rando Allikmets, Emily Freeman, Ping Chen, Michael Conlon, Lei Zhu
  • Patent number: 11648233
    Abstract: The present invention is related to an active substance of Hericium erinaceus having a pain-relieving effect, and a pharmaceutical composition including the active substance. The active substance is prepared using the following steps: (a) inoculating a mycelium of H. erinaceus on an agar plate and incubating at 15-32° C. for 8-16 days; (b) inoculating the incubated H. erinaceus mycelia from step (a) into a medium in a flask and incubating at 20-30° C. and pH 4.5-6.5 for 3-5 days; (c) inoculating the incubated H. erinaceus mycelia from step (b) into a medium in a fermentation tank and incubating at 24-32° C. and pH 4.5-5.5 for 8-16 days to obtain a fermented medium of the H. erinaceus mycelia; and (d) desiccating the fermented medium of the H. erinaceus mycelia from step (c) to obtain the powder of the H. erinaceus mycelia, which is further purified and isolated to obtain a novel compound of H. erinaceus.
    Type: Grant
    Filed: November 5, 2019
    Date of Patent: May 16, 2023
    Assignee: GRAPE KING BIO LTD.
    Inventors: Pei-Shan Liu, Chien-Chih Chen, Chin-Chu Chen, Li-Ya Lee, Wan-Ping Chen, Ting-Wei Lin, Jui-Hsia Hsu, Wei-Ching Chu
  • Patent number: 11652097
    Abstract: A transient voltage suppression device includes a P-type semiconductor layer, a first N-type well, a first N-type heavily-doped area, a first P-type heavily-doped area, a second P-type heavily-doped area, and a second N-type heavily-doped area. The first N-type well and the second N-type heavily-doped area are formed in the layer. The first P-type heavily-doped area is formed in the first N-type well. The first P-type heavily-doped area is spaced from the bottom of the first N-type well. The second P-type heavily-doped area is formed within the first N-type well and spaced from the sidewall of the first N-type well. The second P-type heavily-doped area is formed between the first P-type heavily-doped area and the second N-type heavily-doped area.
    Type: Grant
    Filed: November 30, 2020
    Date of Patent: May 16, 2023
    Assignee: AMAZING MICROELECTRONIC CORP.
    Inventors: Tun-Chih Yang, Zi-Ping Chen, Kun-Hsien Lin
  • Patent number: 11647101
    Abstract: An example method is provided to deploy an application in multiple cloud computing environments. The method may comprise a computing system generating a first request to deploy an application in a first cloud computing environment according to a first deployment plan and a second request to deploy the application in a second cloud computing environment according to a second deployment plan. The method may comprise selecting, from multiple communication components configured on the computing system, a first communication component to communicate with a first orchestration node in the first cloud computing environment and a second communication component to communicate with a second orchestration node in the second cloud computing environment. The method may further comprise sending the first request to the first orchestration node via the first communication component, and the second request to the second orchestration node via the second communication component.
    Type: Grant
    Filed: June 25, 2021
    Date of Patent: May 9, 2023
    Assignee: VMware, Inc.
    Inventors: Ping Chen, Yuanzhi Wang, Wei Zhang
  • Patent number: 11647394
    Abstract: A wireless communication system using wireless LAN channels for wireless communication is disclosed, comprising: master access point, slave access points, and computing unit. First, the master access point creates a collision record table and a usage time record table. After that, the master access point updates the collision record table and usage time record table based on the usage information, and transmits the collision record table and usage time record table to the slave access points. The computing unit generates the channel collision probability through the number of collisions, and calculates the usage weight of the dynamic frequency selection channel through the channel collision probability. Finally, the wireless communication system automatically selects the wireless LAN channels of the master access point and the slave access points according to the usage weight and usage time record table. As such, the wireless communication system has high efficiency and low delay.
    Type: Grant
    Filed: July 15, 2021
    Date of Patent: May 9, 2023
    Assignee: ARCADYAN TECHNOLOGY CORPORATION
    Inventors: Kuo Shu Huang, Kenchih Chen, Chun-Ping Chen, Tsung-Hsien Hsieh
  • Patent number: 11646353
    Abstract: A semiconductor device structure includes a substrate, a first gate structure, a second gate structure, a first well region, and a first structure. The substrate has a first surface and a second surface opposite to the first surface. The first gate structure is disposed on the first surface. The second gate structure is disposed on the first surface. The first well region is in the substrate and between the first gate structure and the second gate structure. The first structure is disposed in the first well region. A shape of the first structure has an acute angle.
    Type: Grant
    Filed: December 27, 2021
    Date of Patent: May 9, 2023
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: Yu-Ping Chen, Chun-Shun Huang
  • Publication number: 20230133331
    Abstract: The present disclosure provides a chemical mechanical polishing system having a unitary platen. The platen includes one or more recesses within the platen to house various components for the polishing/planarization process. In one embodiment, the platen includes a first recess and a second recess. The first recess is located under the second recess. An end point detector is placed in the first recess and a detector cover may be placed in the second recess. A sealing mean is provided in a space between the end point detector and the detector cover to prevent any external or foreign materials from coming in contact with the end point detector. A fastener used for fastening the detector cover to the platen also provides addition protection to prevent foreign materials from coming in contact with components received in the recesses.
    Type: Application
    Filed: January 3, 2023
    Publication date: May 4, 2023
    Inventors: Tsung-Lung Lai, Cheng-Ping Chen, Shih-Chung Chen, Sheng-Tai Peng, Rong-Long Hung
  • Patent number: 11640924
    Abstract: The present disclosure provides a method of forming an integrated circuit structure. The method includes depositing a first metal layer on a semiconductor substrate; forming a hard mask on the first metal layer; patterning the first metal layer to form first metal features using the hard mask as an etch mask; depositing a dielectric layer of a first dielectric material on the first metal features and in gaps among the first metal features; performing a chemical mechanical polishing (CMP) process to both the dielectric layer and the hard mask; removing the hard mask, thereby having portions of the dielectric layer extruded above the metal features; forming an inter-layer dielectric (ILD) layer of the second dielectric material different from the first dielectric material; and patterning the ILD layer to form openings that expose the first metal features and are constrained to be self-aligned with the first metal features by the extruded portions of the first dielectric layer.
    Type: Grant
    Filed: May 7, 2021
    Date of Patent: May 2, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tai-I Yang, Yu-Chieh Liao, Chia-Tien Wu, Hsin-Ping Chen, Hai-Ching Chen, Shau-Lin Shue
  • Publication number: 20230118866
    Abstract: A cavity interposer has a cavity, first bondpads adapted to couple to a chip-type camera cube disposed within a base of the cavity at a first level, the first bondpads coupled through feedthroughs to second bondpads at a base of the interposer at a second level; and third bondpads adapted to couple to a light-emitting diode (LED), the third bondpads at a third level. The third bondpads coupled to fourth bondpads at the base of the interposer at the second level; and the second and fourth bondpads couple to conductors of a cable with the first, second, and third level different. An endoscope optical includes the cavity interposer an LED, and a chip-type camera cube electrically bonded to the first bondpads; the LED is bonded to the third bondpads; and a top of the chip-type camera cube and a top of the LED are at a same level.
    Type: Application
    Filed: May 18, 2022
    Publication date: April 20, 2023
    Inventors: Teng-Sheng CHEN, Wei-Ping CHEN, Wei-Feng LIN, Jau-Jan DENG
  • Publication number: 20230122722
    Abstract: A cavity interposer has a cavity, first bondpads adapted to couple to a chip-type camera cube disposed within a base of the cavity at a first level, the first bondpads coupled through feedthroughs to second bondpads at a base of the interposer at a second level; and third bondpads adapted to couple to a light-emitting diode (LED), the third bondpads at a third level. The third bondpads coupled to fourth bondpads at the base of the interposer at the second level; and the second and fourth bondpads couple to conductors of a cable with the first, second, and third level different. An endoscope optical includes the cavity interposer an LED, and a chip-type camera cube electrically bonded to the first bondpads; the LED is bonded to the third bondpads; and a top of the chip-type camera cube and a top of the LED are at a same level.
    Type: Application
    Filed: October 18, 2021
    Publication date: April 20, 2023
    Inventors: Teng-Sheng CHEN, Wei-Ping CHEN, Jau-Jan DENG, Wei-Feng LIN, Chun-Sheng FAN
  • Publication number: 20230119370
    Abstract: A semiconductor device in a first area includes first non-planar semiconductor structures separated with a first distance, and a first isolation region including a first layer and a second layer that collectively embed a lower portion of each of the first non-planar semiconductor structures. At least one of the first layer or second layer of the first isolation region is in a cured state. The semiconductor device in a second area includes second non-planar semiconductor structures separated with a second distance, and a second isolation region including a first layer and a second layer that collectively embed a lower portion of each of the second non-planar semiconductor structures. At least one of the first or second layer of the second isolation region is in a cured state.
    Type: Application
    Filed: December 15, 2022
    Publication date: April 20, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yao Lin, Hsiao Wen Lee, Li-Jung Kuo, Chen-Ping Chen, Ming-Ching Chang
  • Patent number: 11626671
    Abstract: An electrical male terminal of this invention includes a clamp or crimp area, a main body, and a blade. Protruding members and support members of the main body act as overstress protection. A panel shield member protects a protruding guide member. In another embodiment of this invention, a protruding member extends from a first support member of the main body, and a cut-out portion at the lower portion of the main body accommodates therein the protruding member to prevent the tang member from inadvertently or accidentally rotating relative to the lower portion of the main body.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: April 11, 2023
    Assignee: J.S.T. CORPORATION
    Inventors: Ping Chen, Gwendolyn Upson
  • Publication number: 20230107642
    Abstract: Compounds with KRAS G12C inhibitory active are disclosed and methods of using the same to treat a cancer comprising a K-Ras G12C mutation.
    Type: Application
    Filed: December 20, 2021
    Publication date: April 6, 2023
    Inventors: Jun FENG, Jean-Michel VERNIER, Marcos GONZALEZ-LOPEZ, Benjamin JONES, Nicholas A. ISLEY, Ping CHEN
  • Patent number: 11618126
    Abstract: A polishing pad conditioning apparatus includes a base, a fiber, and a polymer protruding from a surface of the base and encompassing the fiber.
    Type: Grant
    Filed: July 6, 2020
    Date of Patent: April 4, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Cheng-Ping Chen, Shih-Chung Chen, Sheng-Tai Peng, Hung-Lin Chen