Abstract: Disclosed are a carbon fiber reinforced ceramic atomizing core and a preparation method thereof. The carbon fiber reinforced ceramic atomizing core includes, by mass, the following raw materials: 30-70 parts of ceramic powder, 1-10 parts of carbon fibers, 10-50 parts of a sintering aid, and 0-30 parts of a pore former. By adding carbon fibers to the carbon fiber reinforced ceramic atomizing core, the atomizing core has columnar pores, which are similar to straight pores formed by fiber stacking of cotton cores, such that the oil conduction capacity and oil retention capacity of the atomizing core are improved, and the atomizing effect and taste of the atomizing core are also improved; and the carbon fibers can be bridged around the pores, thus improving the tenacity and strength of the atomizing core.

Abstract: An automatic large-mass-weight handling system comprises: a weight picking device (10) configured for picking up and holding a large-mass-weight (75); a driving device (80) for providing a driving power; a weight transferring device (50) comprising a first horizontal rail (52) and a vertical rail (62) assembled to the first horizontal rail (52) in a way of being movable along the first horizontal rail (52), the first horizontal rail (52) extending in a first horizontal direction, the vertical rail (62) extending in a vertical direction perpendicular to the first horizontal direction, and the weight picking device (10) being assembled to the vertical rail (62); and a control unit for controlling the movement of the weight picking device (10); wherein the control unit controls the driving device (80) in a way that the weight picking device (10) is able to be moved automatically in the first horizontal direction and is able to be moved automatically in the vertical direction.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.

Abstract: A structure of an atomizing core includes, by mass, the following raw materials: 30-50 parts of main materials, 5-20 parts of low-melting point glass powder, 0-20 parts of carbon fibers, 0-20 parts of graphene, 0-30 parts of an additive, and 0-10 parts of a binder. The number of parts of at least one of the carbon fibers, the graphene and the additive is not zero. The main materials include at least one of alumina, bauxite and corundum; the additive is an aluminium dihydrogen phosphate solution with a mass fraction of 90%. Compared with existing silicone structure member, the structure member of an atomizing core has micro-pores and high strength, can effectively prevent oil leakage and dry burning when the atomizing core is used for atomization, and can protect a cotton core mounted therein; and the structure member is easy to prepare, low in cost, and easy to form.

Abstract: A semiconductor device includes a substrate, an interconnect layer disposed over the substrate and including a metal line, and a dielectric layer disposed on the interconnect layer and including a via contact. The via contact is electrically connected to the metal line and has a first dimension in a first direction greater than a second dimension in a second direction. The first direction and the second direction are perpendicular to each other, and are both perpendicular to a longitudinal direction of the via contact.

Abstract: An electrical male terminal of this invention includes a clamp or crimp area, a main body, and a blade. Protruding members and support members of the main body act as overstress protection. A panel shield member protects a protruding guide member. In another embodiment of this invention, a protruding member extends from a first support member of the main body, and a cut-out portion at the lower portion of the main body accommodates therein the protruding member. Furthermore, in this another embodiment of the electrical male terminal of this invention, a protrusion extends from the unattached end portion of the lever member to protect the electrical male terminal from inadvertently falling out during use. The configuration or shape of the cross-section across the upper portion at the front portion of the main body and the support member at the front portion of the main body of the electrical male terminal is substantially U-shaped.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises an interlayer dielectric (ILD) layer disposed over a substrate; a first conductive feature at least partially embedded in the ILD layer; a dielectric layer disposed over and aligned with the ILD layer, wherein a top surface of the dielectric layer is above a top surface of the first conductive feature; an etch stop layer (ESL) disposed over the dielectric layer and over the first conductive feature; and a second conductive feature disposed on the first conductive feature, wherein the second conductive feature includes a first portion having a first bottom surface contacting a top surface of the first conductive feature and a second portion having a second bottom surface contacting a top surface of the dielectric layer.

Abstract: In an embodiment, a method includes forming a first conductive feature in a first inter-metal dielectric (IMD) layer; depositing a blocking film over and physically contacting the first conductive feature; depositing a first dielectric layer over and physically contacting the first IMD layer; depositing a second dielectric layer over and physically contacting the first dielectric layer; removing the blocking film; depositing an etch stop layer over any physically contacting the first conductive feature and the second dielectric layer; forming a second IMD layer over the etch stop layer; etching an opening in the second IMD layer and the etch stop layer to expose the first conductive feature; and forming a second conductive feature in the opening.

Abstract: A partial discharge (PD) detection apparatus for gas-insulated equipment includes a photon collector, an optical splitter, a first photoelectric conversion module, an ultraviolet fluorescent crystal, a second photoelectric conversion module, and a signal processing module, where the ultraviolet fluorescent crystal is configured to convert a second optical radiation signal into an optical radiation signal of an ultraviolet fluorescence band, and the signal processing module is configured to calculate first apparent intensity based on a first voltage signal output by the first photoelectric conversion module, calculate second apparent intensity based on a second voltage signal output by the second photoelectric conversion module, and determine discharge intensity of the optical radiation based on a ratio of the second apparent intensity to the first apparent intensity. Technical solutions of the present disclosure are not affected by an unknown distance between a discharge position and a detection point.

Abstract: A semiconductor device includes a conductive line and a conductive via contacting the conductive line. A first dielectric material contacts a first sidewall surface of the conductive via. A second dielectric material contacts a second sidewall surface of the conductive via. The first dielectric material includes a first material composition, and the second dielectric material includes a second material composition different than the first material composition.

Abstract: A method for forming a semiconductor device structure is provided. The method includes removing a portion of a dielectric layer to form a trench in the dielectric layer. The method includes forming a barrier layer in the trench. The method includes forming a seed layer in the trench and over the barrier layer. The seed layer is doped with manganese. The method includes annealing the seed layer in a first process gas including a first hydrogen gas. A volume ratio of the first hydrogen gas to the first process gas ranges from about 50% to about 100%, and the manganese diffuses from the seed layer to the barrier layer during the annealing of the seed layer in the first process gas.

Abstract: An atomization assembly includes a heating assembly, a cover, a base and an electrode. The heating assembly includes a heating element and a support. A compartment is disposed on one of the cover and the base and is open towards the other one of the cover and the base. The heating assembly is disposed in the compartment. The heating element is transversely integrated with the top of the support to be supported by the support. The heating assembly is sandwiched between the cover and the base. The heating element includes a main part used for heating and atomizing liquid and an electrical connection part connected to the main part. The electrical connection part is bent from the top of the support to one side of the support. The electrode is in contact with the portion, bent to one side of the support, of the electrical connection part.

Abstract: An image text recognition method includes converting an image into a grayscale image, and segmenting, according to layer intervals to which grayscale values of pixels in the grayscale image belong, the grayscale image into grayscale layers with one corresponding to a layer interval, performing image erosion on a grayscale layer to obtain a feature layer corresponding to the grayscale layer, the feature layer including at least one connected region; overlaying feature layers to obtain an overlaid feature layer, the overlaid feature layer including connected regions; dilating connected regions on the overlaid feature layer according to a preset direction to obtain text regions; and performing text recognition on the text regions on the overlaid feature layer to obtain a recognized text corresponding to the image.

Abstract: The present disclosure relates to the technical field of wireless communications, in particular, a digital predistortion (DPD) apparatus applicable to a 5G broadband multiple-input multiple-output (MIMO) system. The DPD apparatus includes a data processing module, a digital-to-analog conversion module, a signal output module, a signal feedback module, and an analog-to-digital conversion module; the signal feedback module is to ensure that at least two feedback paths are directed to a DPD feedback signal. The first feedback path is a main feedback loop, and the second feedback path is an auxiliary feedback loop. The present disclosure has the advantages of occupying a few of hardware resources, being capable of monitoring a DPD feedback loop signal in real time, and making a response in time.

Abstract: An auxiliary determination device for evaluating whether a transcranial magnetic stimulation (TMS) is effective for a patient with depression is provided. The device includes a feature extraction unit and a machine learning unit electrically connected thereto. In an interpretation mode, the feature extraction unit extracts a feature value from electroencephalography signals of the patient, and at least a classifier of the machine learning unit determines the efficacy of TMS for the patient according to the feature value of the electroencephalography signals. The electroencephalography signals are electroencephalography signals of the patient after being driven by a cognitive operation or a difference between electroencephalography signals before and after being driven by the cognitive operation, and the feature value is a linear or non-linear feature value.

Abstract: A liquid introduction apparatus for introducing glue or other liquid into a product includes a platform and a housing mounted to the platform for defining a confined space. The confined space can form a sealed vacuum environment, and an introduction mechanism is arranged on the platform and is configured for introducing liquid into the product in a vacuum environment by discharging air from the confined space. The disclosure also provides an adhesive dispensing apparatus.

Abstract: A fingerprint sensor has an array of microlenses formed on an upper surface of a transparent substrate; with a lower surface of the transparent substrate bonded to an upper surface of a fingerprint image sensor integrated circuit. In embodiments, it includes one or two filter layers on the lower surface of the transparent substrate, and may also include masked black baffle layers on one or more of the upper and lower surface of the transparent substrate. The sensor is made by forming the microlenses and black baffle layers on the transparent substrate, then aligning the transparent substrate to a wafer of fingerprint sensor integrated circuits and bonding the transparent substrate to the wafer, then dicing the wafer into individual fingerprint sensors.

Abstract: A liquid introduction apparatus for introducing liquid into a product includes a platform, a cabinet on the platform for receiving the product, a cover transfer mechanism on the platform and adjacent to the cabinet, and an introduction mechanism. The cover transfer mechanism moves a cover to seal the cabinet. The introduction mechanism includes an introduction nozzle extending through the cover, and the introduction nozzle is configured to connect to the product in the cabinet and introduce liquid into the product when the cabinet has a vacuum environment. An adhesive dispensing apparatus and a liquid introduction method are also disclosed.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate including a semiconductor material. The semiconductor device includes a conduction channel of a transistor disposed above the substrate. The conduction channel and the substrate include a similar semiconductor material. The semiconductor device includes a source/drain region extending from an end of the conduction channel. The semiconductor device includes a dielectric structure. The source/drain region is electrically coupled to the conduction channel and electrically isolated from the substrate by the dielectric structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first dielectric layer over the substrate. The semiconductor device structure also includes a first conductive feature and a second conductive feature surrounded by the first dielectric layer and a second dielectric layer over the first dielectric layer. The semiconductor device structure further includes a resistive element having a first portion over the second dielectric layer and a second portion penetrating through the second dielectric layer to be electrically connected to the first conductive feature. In addition, the semiconductor device structure includes a conductive via penetrating through the second dielectric layer to be electrically connected to the second conductive feature. The second portion of the resistive element is wider than the conductive via.