Abstract: A method of forming a nanosheet FET is provided. A plurality of first and second semiconductor layers are alternately formed on a substrate. The first and second semiconductor layers are patterned into a plurality of stacks of semiconductor layers separate from each other by a space along a direction. Each stack of semiconductor layers has a cross-sectional view along the direction gradually widening towards the substrate. An epitaxial feature is formed in each of the spaces. The patterned second semiconductor layers are then removed from each of the stacks of semiconductor layers.

Abstract: A method of fabricating a semiconductor structure includes selective use of a cladding layer during the fabrication process to provide critical dimension uniformity. The cladding layer can be formed before forming a recess in an active channel structure or can be formed after filling a recess in an active channel structure with dielectric material. These techniques can be used in semiconductor structures such as gate-all-around (GAA) transistor structures implemented in an integrated circuit.

Abstract: A display screen (12) includes: a touch panel (1201), an optical adhesive layer (1202) disposed below the touch panel (1201), a light guide plate (1211) disposed below the optical adhesive layer (1202), and a light emitting member (1213) configured to emit light. The light guide plate (1211) includes a light guide plate layer and a diffusion layer disposed on an upper surface of the light guide plate layer, and the diffusion layer is configured to diffusely reflect light emitted by the light emitting member (1213). The optical adhesive layer (1202) includes diffusion particles for atomizing light transmitted through the light guide plate (1211).

Abstract: A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers. The semiconductor device includes a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface. A portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees.

Abstract: The present disclosure relates to an integrated chip that includes a substrate, a first metal line, and a hybrid metal line. The first metal line includes a first metal material and is within a first interlayer dielectric (ILD) layer over the substrate. The hybrid metal line is also within the first ILD layer. The hybrid metal line includes a pair of first metal segments that comprise the first metal material. The hybrid metal line further includes a second metal segment that comprises a second metal material that is different from the first metal material. The second metal segment is laterally between the pair of first metal segments.

Abstract: A method of fabricating a semiconductor device includes etching a first trench and a second trench in an epitaxial layer over a semiconductor and forming a dielectric liner within the trenches. A photoresist layer is formed within the trenches and over the epitaxial layer and given a post-exposure bake at a first temperature. The photoresist layer is then given an adhesion-promoting bake at a greater second temperature; The photoresist layer is then removed from a top portion the trenches, thereby exposing a top portion of the dielectric liner and leaving a remaining portion of the photoresist in a bottom portion of the trenches. The exposed dielectric liner is etched, thereby leaving a remaining portion of the dielectric liner in the top portion of the trenches. The remaining portion of the photoresist is removed and the trenches are filled with a polysilicon layer.

Abstract: The present disclosure provides a memory device and the forming method thereof. The memory device includes a gate structure on a substrate, a source/drain region in a substrate, a dielectric layer covering the substrate and the gate structure, and a cell contact adjacent to the gate structure. The cell contact includes a conductive layer, a first barrier layer on a sidewall of the conductive layer, and a second barrier layer on a bottom surface of the conductive layer. The second barrier layer directly contacts the first barrier layer and the source/drain region. A second resistivity of the second barrier layer is lower than a first resistivity of the first barrier layer.

Abstract: An efficient reinforced heating assembly, including a reinforcing frame, a liquid conducting member and at least two heating members. The reinforcing frame is provided with a vent opening for air to pass therethrough. The at least two heating members are disposed on the reinforcing frame, disposed in the vent opening or covered on the vent opening, to be in contact with the air. The liquid conducting member is disposed on a side of the heating member and in contact with the heating member, so that the liquid conducting member is able to conduct an external liquid to the heating member for heating and atomizing to generate an aerosol, which is output via the vent opening. An atomizing device is further provided, including a shell and the efficient reinforced heating assembly disposed in the shell. The reinforcing frame supports the heating member to improve the strength of the heating member.

Abstract: An electrical connector is provided. The electrical connector can include a female housing and a terminal position assurance member forming a pre-installed assembly. The TPA member can be in a final lock position to provide reinforcement or secondary locking for a terminal, and terminal position assurance. A male housing can be provided to receive the assembly.

Abstract: A semiconductor device includes a substrate, a heat dissipation dielectric layer, a conductive interconnect structure, and a blocking dielectric layer. The heat dissipation dielectric layer is disposed on the substrate and has a thermal conductivity greater than 10 W/mK. The conductive interconnect structure is disposed in the heat dissipation dielectric layer. The blocking dielectric layer is disposed in the heat dissipation dielectric layer to isolate the conductive interconnect structure from the heat dissipation dielectric layer.

Abstract: A magnetic element includes a first magnetic core, a coil and a second magnetic core. The first magnetic core is made of a ferrite material, and a magnetic permeability of the first magnetic core is higher than 700. The coil is installed on the first magnetic core. The second magnetic core is formed by molding an alloy composition. In addition, the coil and at least a portion of the first magnetic core are covered by the second magnetic core.

Abstract: A method includes forming a transistor over a front side of a substrate, in which the transistor comprises a channel region, a gate region over the channel region, and source/drain regions on opposite sides of the gate region; forming a front-side interconnect structure over the transistor, wherein the front-side interconnect structure includes a dielectric layer and conductive features; and bonding the front-side interconnect structure to a carrier substrate via a bonding layer, in which the bonding layer is between the front-side interconnect structure and the carrier substrate, and the bonding layer has a higher thermal conductivity than the dielectric layer of the front-side interconnect structure.

Abstract: A compound of Formula (I) is provided: where the variables are defined herein.

Abstract: Some embodiments relate to a semiconductor structure including a dielectric layer over a substrate. A conductive body is disposed within the dielectric layer. The conductive body has a bottom surface continuously extending between opposing sidewalls. A first liner layer is disposed between the conductive body and the dielectric layer. The first liner layer extends along the opposing sidewalls of the conductive body. The first liner layer is laterally offset from a central region of the bottom surface of the conductive body by a non-zero distance.

Abstract: An electronic device includes a chassis, a first circuit board, and a second circuit board. The chassis includes a bottom plate. The first circuit board includes a first connector. The second circuit board includes a board body, a second connector, and a locking assembly. The board body is configured to be slid on the bottom plate. The locking assembly includes an operating portion and a locking rod. The operating portion is connected to the board body. The locking rod is configured to be slid between a locked position and a released position along the operating portion. A locking end of the locking rod is toward to the board body. When the second connector and the first connector are connected to each other, and the locking rod is at the locked position, the locking end of the locking rod is in a locating hole of the bottom plate.

Abstract: This application relates to novel substituted sulfonylurea compounds and analogues, their manufacture, pharmaceutical compositions comprising them, and their use as medicaments for treating a disease associated with modulation of cytokines such as IL-1? and IL-18, modulation of NLRP3, or inhibition of the activation of NLRP3 or related components of the inflammatory process.

Abstract: Disclosed herein are compounds of formula (I) which are inhibitors of an IDO enzyme: Also disclosed herein are uses of the compounds in the potential treatment or prevention of an IDO-associated disease or disorder. Also disclosed herein are compositions comprising these compounds. Further disclosed herein are uses of the compositions in the potential treatment or prevention of an IDO-associated disease or disorder.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate including a semiconductor material. The semiconductor device includes a conduction channel of a transistor disposed above the substrate. The conduction channel and the substrate include a similar semiconductor material. The semiconductor device includes a source/drain region extending from an end of the conduction channel. The semiconductor device includes a dielectric structure. The source/drain region is electrically coupled to the conduction channel and electrically isolated from the substrate by the dielectric structure.

Abstract: The present embodiments provide compounds of Formula I, pharmaceutical compositions of the compounds, and methods for treating diseases such as cancer.

Abstract: A method of fabricating a semiconductor device is described. The method includes forming a plurality of fins over a substrate, and forming dummy gates patterned over the fins. Each dummy gate has a spacer on sidewalls of the patterned dummy gates. The method also includes forming recesses in the fins by using the patterned dummy gates as a mask, forming a passivation layer over the fins and in the recesses in the fins, and patterning the passivation layer to leave a remaining passivation layer in some of the recesses in the fins.