Abstract: A distortion compensating apparatus includes following units. An information measuring unit measures a distortion component and an electric power component based on a radiation signal. A compensation coefficient calculating unit calculates a compensation coefficient based on the distortion component and the electric power component. A signal transmitting unit outputs a signal corrected by the compensation coefficient as a transmission signal. A signal converting unit converts the transmission signal into a high frequency signal. An amplitude separating unit amplifies the high frequency signal and separates a portion thereof as a signal to be fed back. A feeding-back unit processes the portion and outputs the result as a feedback signal to the information measuring unit.

Abstract: A luminescent product molded by centrifugal molding which is inhibited from curling and has a white layer for improving phosphorescent performance. The product comprises: a hiding layer formed from a first mixture which is a mixture of a first thermosetting resin and a pigment by subjecting the mixture to centrifugal molding with heating; a phosphorescent layer obtained from a second mixture which is a mixture of a second thermosetting resin and a phosphorescent pigment having a higher specific gravity than the second thermosetting resin by pouring the second mixture on the hiding layer and subjecting it to centrifugal molding with heating; and a transparent layer. The phosphorescent layer is located nearly at the center of the product thickness. Thus, the product can be effectively inhibited from curling.

Abstract: A memory cell in a semiconductor memory device comprises a variable resistor element configured so that a variable resistor body is sandwiched between a first electrode and a second electrode, and a transistor element capable of controlling a flow of current in the variable resistor element, wherein the transistor element and the variable resistor element are placed one over the other along a direction in which the first electrode, the variable resistor body, and the second electrode of the variable resistor element are layered, and one of the first electrode and the second electrode of the variable resistor element is connected to one electrode of the transistor element.

Abstract: A fuel distribution apparatus for a V-type engine wherein first and second throttle bodies connected to first and second banks disposed in a V shape, respectively, are disposed therebetween and a main fuel distribution pipe for distributing fuel from a common fuel supply system is connected to first and second fuel injection valves provided in the first and second throttle bodies, respectively, is configured such that the fuel distribution pipe is formed from first and second distribution pipes separate from each other and connected to the first and second fuel injection valves and besides fastened to the first and second throttle bodies, respectively, a joint pipe connects the fuel supply to the first or second distribution pipes. Communication conduit connects the first and second distribution pipes.

Abstract: There is provided a transmitter receiver apparatus in which a directional coupler and single pole double throw (SPDT) switches are includes on the reception side. In the directional coupler, a reception signal is inputted and split into two signals having phases different from each other by 90° and the two split signals are outputted to SPDTs. Each of the SPDTs outputs each of the split signals to an output terminal connected to an amplifier during a passage mode and to a terminal terminated with a predetermined impedance during a blocking mode.

Abstract: When multicast distribution is performed on a network where a point-to-point connection is made between user terminals and a multicast router, the multicast router is protected from load due to response reports, join requests, or leave statements sent from the user terminals simultaneously. If the user terminals send response reports simultaneously, a Layer 2 switch disposed between the user terminals and the multicast router limits response reports sent to the multicast router. The Layer 2 switch prevents response reports sent from the same user terminal from being discarded consecutively, by sending a response report sent from the same user terminal to the multicast router 200 with priority in the next join confirmation event. If the user terminals send join requests or leave statements simultaneously, the Layer 2 switch limits the join requests or leave statements sent to the multicast router 200 in the same manner.

Abstract: The present invention provides a semiconductor device includes: an element isolation region configured to be formed in a semiconductor substrate; a P-type field effect transistor configured to be formed in a first element formation region of the semiconductor substrate for which isolation by the element isolation region is carried out; an N-type substrate region configured to be formed in the semiconductor substrate for which isolation by the element isolation region is carried out, arsenic being ion-implanted into the N-type substrate region; a nickel silicide layer configured to be formed on the N-type substrate region; a first insulating film configured to cover the P-type field effect transistor and have compressive stress; and a second insulating film configured to cover the N-type substrate region and have tensile stress or compressive stress lower than the compressive stress of the first insulating film.

Abstract: A seat apparatus for a vehicle includes a first engagement member moving in association with an upper arm, a second engagement member pivotally moved between a first position and a second position for pivotally moving the upper arm from a first pivot position to a second pivot position and retaining the upper arm at the second position by an engagement between the first engagement member and an engagement portion of the second engagement member, and a tilting mechanism releasing a lock of a reclining mechanism for pivotally moving the upper arm to a third pivot position. The seat apparatus further includes a retaining mechanism provided at the second engagement member for retaining the second engagement member at the first position against a biasing force of a biasing mechanism for biasing the second engagement member in a direction from the first position to the second position.

Abstract: A method for controlling the temperature gradient on the side surface of a silicon single crystal, the height of a solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal is provided in order to manufacture a defect-free silicon single crystal whose oxygen concentration is controlled to a predetermined value rapidly and stably. By disposing a cylindrical cooler around the silicon single crystal, and adjusting the pulling speed of the silicon single crystal, the rotation speed of a crucible that stores molten silicon and the rotation speed of the silicon single crystal, and the output ratio of a multi-heater separated into at least two in the longitudinal direction of the silicon single crystal disposed around the crucible, the temperature gradient on the side surface, the height of the solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal are controlled.

Abstract: A storage battery includes: a bottomed metal case (10) accommodating an electrolyte and a collector (7) having a flat plate connected to one side of an electrode assembly (5) containing a strip-shaped positive electrode plate (1), a strip-shaped negative electrode plate (2), and a separator (6); a sealing plate (11) sealing upside of the bottomed metal case; and a lead terminal (9) electrically connecting the sealing plate to the collector, wherein the collector has at least one projection (13) and the collector and the lead terminal are electrically connected with each other via the projection. This construction eliminates the problem of increased contact resistance between the lead terminal and the collector and realizes a storage battery having high current discharging performance in which the contact resistance is reduced.

Abstract: The present invention relates to a method for immobilizing a protein in a sample, which could not easily be immobilized by the conventional immobilization method, to a solid-phase; a method for quantitative determination of protein wherein an effect of inhibitory substance coexisting in a sample prepared using the immobilization method can be reduced; and a rapid and highly precise method for detecting an abnormal PrP and a method for determining BSE using the immobilization method as compared with the conventional method.

Abstract: A previous amplifier circuit of the present invention includes: a grounded emitter amplifier circuit using a grounded emitter transistor connected to a light receiving device; another grounded emitter amplifier circuit using another grounded emitter transistor connected to another light receiving device; and a grounded emitter changing switch to be switched in a manner such that an emitter of the grounded emitter transistors is grounded so as to cause only one of the grounded emitter amplifier circuits to operate. A light-receiving amplifier circuit includes the previous amplifier circuit. An optical pickup apparatus includes the light-receiving amplifier circuit.

Abstract: A semiconductor device, which is characterized by that two or more island-shaped semiconductor layers including first and second island-shaped semiconductor layers are formed on the same substrate, at least the first island-shaped semiconductor layer has steps in its side wall so that sectional area of a cross section parallel to the surface of the substrate varies stepwise with respect to height in the vertical direction, the second island-shaped semiconductor layer is different from the first island-shaped semiconductor layer with respect to the presence/absence of a step in the side wall or the number of steps, and each of the first and second island-shaped semiconductor layers provides an element on a stair part of the side wall divided by the steps or on the side wall having no steps.

Abstract: The present invention provides a semiconductor memory device having one or more protruding semiconductor layers formed on a semiconductor substrate of a first conductivity type and a plurality of memory cells on surfaces of the protruding semiconductor layers, wherein each of the memory cells is formed of a charge storage layer, a control gate and an impurity diffusion layer of a second conductivity type which is formed in a portion of the protruding semiconductor layer and the plurality of memory cells is aligned to at least a predetermined direction, and the control gates of the plurality of memory cells is aligned to the predetermined direction are placed so as to be separated from each other.

Abstract: A semiconductor device, which is characterized by that two or more island-shaped semiconductor layers including first and second island-shaped semiconductor layers are formed on the same substrate, at least the first island-shaped semiconductor layer has steps in its side wall so that sectional area of a cross section parallel to the surface of the substrate varies stepwise with respect to height in the vertical direction, the second island-shaped semiconductor layer is different from the first island-shaped semiconductor layer with respect to the presence/absence of a step in the side wall or the number of steps, and each of the first and second island-shaped semiconductor layers provides an element on a stair part of the side wall divided by the steps or on the side wall having no steps.

Abstract: The present invention provides a semiconductor memory device including: a semiconductor substrate of a first conductivity type; and a memory cell including: (i) a columnar semiconductor portion formed on the substrate, (ii) at least two charge-storage layers formed around a periphery of the columnar semiconductor portion and divided in a direction vertical to the semiconductor substrate, and (iii) a control gate that covers at least a portion of charge-storage layers, wherein the memory cell is capable of holding two-bit or more data.

Abstract: A packet forwarding apparatus with a function of registering packet forwarding control information for each user terminal into a user management table during PPPoE connection and authentication phases in which the apparatus carries out predetermined communication procedures with each user terminal. During DHCP and IP forwarding phases following the authentication phase, the packet forwarding apparatus controls packet forwarding based on the user management table. Packets are forwarded in the form of PPPoE frame until the authentication phase is completed and packets are forwarded in the form of Ethernet frame in the DHCP and IP forwarding phases.

Abstract: The present invention relates to a method for manufacturing a silicon single crystal by pulling up the silicon single crystal from a molten silicon by the CZ method, comprising: a cooling step of cooling the silicon single crystal by a cooler surrounding the silicon single crystal, and a heat shield body disposed surrounding an outer side and a lower side of the cooler while the silicon single crystal is being pulled up; and an Ms adjusting step of determining, in advance, an allowable range of a pulling speed at which a silicon single crystal having few crystal defects can be obtained by adjusting a distance (referred to “Ms”) from the lower surface of the heat shield body disposed on the lower side of the cooler to the surface of the molten silicon, wherein the silicon single crystal 11 is pulled up at a pulling speed within the allowable range thus determined.

Abstract: A previous amplifier circuit of the present invention includes: a grounded emitter amplifier circuit using a grounded emitter transistor connected to a light receiving device; another grounded emitter amplifier circuit using another grounded emitter transistor connected to another light receiving device; and a grounded emitter changing switch to be switched in a manner such that an emitter of the grounded emitter transistors is grounded so as to cause only one of the grounded emitter amplifier circuits to operate. A light-receiving amplifier circuit includes the previous amplifier circuit. An optical pickup apparatus includes the light-receiving amplifier circuit.

Abstract: A method for controlling the temperature gradient on the side surface of a silicon single crystal, the height of a solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal is provided in order to manufacture a defect-free silicon single crystal whose oxygen concentration is controlled to a predetermined value rapidly and stably. By disposing a cylindrical cooler around the silicon single crystal, and adjusting the pulling speed of the silicon single crystal, the rotation speed of a crucible that stores molten silicon and the rotation speed of the silicon single crystal, and the output ratio of a multi-heater separated into at least two in the longitudinal direction of the silicon single crystal disposed around the crucible, the temperature gradient on the side surface, the height of the solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal are controlled.