Abstract: A system of power transmission to a contact lens comprises a contact lens and a magnetic component. The contact lens comprises at least a physiological signal sensing component, an induction coil, and an energy storage component. When the magnetic component has a motion relative to the induction coil, an induced voltage is produced in the induction coil for charging the energy storage component.

Abstract: A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure. The first fin structure and the second fin structure are both disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction in plan view. A first void is formed in the source/drain structure.

Abstract: A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure and a dielectric layer disposed on an upper surface of the isolation insulating layer. Both the first fin structure and the second fin structure are disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction. The first and second fin structures not covered by the gate structure are recessed below the upper surface of the isolation insulating layer. The source/drain structure is formed over the recessed first and second fin structures. A void is formed between the source/drain structure and the dielectric layer.

Abstract: A semiconductor structure includes a substrate, first gate structures and second gate structures over the substrate, third epitaxial semiconductor features proximate the first gate structures, and fourth epitaxial semiconductor features proximate the second gate structures. The first gate structures have a greater pitch than the second gate structures. The third and fourth epitaxial semiconductor features are at least partially embedded in the substrate. A first proximity of the third epitaxial semiconductor features to the respective first gate structures is smaller than a second proximity of the fourth epitaxial semiconductor features to the respective second gate structures. In an embodiment, a first depth of the third epitaxial semiconductor features embedded into the substrate is greater than a second depth of the fourth epitaxial semiconductor features embedded into the substrate.

Abstract: An interferon composition is provided for enhancing the platelet count, reducing the recurrence rate of hepatitis, and/or improving the social function of hepatitis patients. The method comprises administering a low dose of IFN (about 5 IU to about 2500 IU of IFN-alpha) to a patient in need thereof. In one embodiment the IFN is alpha IFN or beta IFN, and more particularly, in one embodiment the administered biologically active IFN is human alpha IFN.

Abstract: An interferon composition is provided for enhancing the platelet count, reducing the recurrence rate of hepatitis, and/or improving the social function of hepatitis patients. The method comprises administering a low dose of IFN (about 5 IU to about 2500 IU of IFN-alpha) to a patient in need thereof. In one embodiment the IFN is alpha IFN or beta IFN, and more particularly, in one embodiment the administered biologically active IFN is human alpha IFN.

Abstract: A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure. The first fin structure and the second fin structure are both disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction in plan view. A first void is formed in the source/drain structure.

Abstract: An operating method of a memory controller includes steps of: configuring the memory controller to receive a read command and read at least one piece of first data stored in a non-volatile memory according to the received read command; configuring the memory controller to determine whether a read count of the at least one piece of first data is greater than a set value; and configuring, the memory controller to copy and store the at least one piece of first data in a data temporary storage device when the read count of the at least one piece of first data is determined to be greater than the set value. A data storage device and another operating method are also provided.

Abstract: A data management method for a data storage device is provided. The data storage device includes a non-volatile memory. The non-volatile memory includes a plurality of pages. Each of the pages is configured to store a plurality of records of data. The data management method includes steps of: receiving a read command; reading target data from a data buffering storage device when the target data corresponding to the read command is stored in the data buffering storage device; determining whether an amount of data of remaining data in the data buffering storage device is greater than a threshold, wherein the remaining data is a part of subsequent data, and the target data and the remaining data have a sequential relationship in terms of data reading; and if the determination result is false, storing data in at least one subsequent page of the target data into the data buffering storage device.

Abstract: A data management method includes steps of: receiving a read command; reading a page containing target data from a non-volatile memory when the target data corresponding to the read command is stored in the non-volatile memory; determining whether a count of reading of the page is greater than a read threshold; and if false, storing at least one record of subsequent data into a first storage space of a data buffering storage device; or if true, storing the at least one record of subsequent data into a second storage space of the data buffering storage device. Both of the target data and the at least one record of subsequent data are stored in the page, and the target data and the at least one record of subsequent data have a sequential relationship in terms of data reading. Another data management method and a corresponding data storage device are also provided.

Abstract: A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure. The first fin structure and the second fin structure are both disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction in plan view. A first void is formed in the source/drain structure.

Abstract: A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure and a dielectric layer disposed on an upper surface of the isolation insulating layer. Both the first fin structure and the second fin structure are disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction. The first and second fin structures not covered by the gate structure are recessed below the upper surface of the isolation insulating layer. The source/drain structure is formed over the recessed first and second fin structures. A void is formed between the source/drain structure and the dielectric layer.

Abstract: An interferon composition is provided for enhancing the platelet count, reducing the recurrence rate of hepatitis, and/or improving the social function of hepatitis patients. The method comprises administering a low dose of IFN (about 5 IU to about 2500 IU of IFN-alpha) to a patient in need thereof. In one embodiment the IFN is alpha IFN or beta IFN, and more particularly, in one embodiment the administered biologically active IFN is human alpha IFN.

Abstract: A method includes receiving a precursor having a substrate and first and second pluralities of gate structures, the first pluralities having a greater pitch than the second pluralities. The method further includes depositing a dielectric layer covering the substrate and the first and second pluralities; and performing an etching process to the dielectric layer. The etching process removes a first portion of the dielectric layer over the substrate, while a second portion of the dielectric layer remains over sidewalls of the first and second pluralities. The second portion of the dielectric layer is thicker over the sidewalls of the second plurality than over the sidewalls of the first plurality. The method further includes etching the substrate to form third and fourth pluralities of recesses adjacent the first and second pluralities, respectively; and epitaxially growing fifth and sixth pluralities of semiconductor features in the third and fourth pluralities, respectively.

Abstract: A method for manufacturing a FinFET, and FinFETs are provided. In various embodiments, the method for manufacturing a FinFET includes forming a fin structure over a substrate. Next, a dummy gate is deposited across over the fin structure. The method continues with forming a pair of first spacers on sidewalls of the dummy gate. Then, a source/drain region is formed in the fin structure not covered by the dummy gate. The method further includes removing the dummy gate to expose the fin structure. After that, the first spacers are truncated, and a gate stack is formed to cover the exposed fin structure and top surfaces of the first spacers.

Abstract: A package structure of an optical module includes: a substrate having a frame defined with a light-emitting region and a light-admitting region; a light-emitting chip disposed at the light-emitting region of the substrate; a light-admitting chip disposed at the light-admitting region of the substrate; two encapsulants formed in the frame and enclosing the light-emitting chip and the light-admitting chip, respectively; and a shielding layer formed on the frame and the encapsulants and having a light-emitting hole and a light-admitting hole, wherein the light-emitting hole and the light-admitting hole are positioned above the light-emitting chip and the light-admitting chip, respectively. The optical module package structure uses an opaque glue to reduce costs and total thickness of the package structure.

Abstract: A battery management system and method are provided. The battery management system includes a plurality of battery devices, wherein each of the battery devices is connected in parallel. Each of the battery devices includes one or a plurality of battery cells which is configured to provide power, a switch circuit, and a controller which is configured to detect a reverse current. When the controller detects the reverse current, the controller will disable the switch circuit and enable a judgment mechanism to determine whether to re-enable the switch circuit.

Abstract: An interferon composition is provided for enhancing the platelet count, reducing the recurrence rate of hepatitis, and/or improving the social function of hepatitis patients. The method comprises administering a low dose of IFN (about 5 IU to about 2500 IU of IFN-alpha) to a patient in need thereof. In one embodiment the IFN is alpha IFN or beta IFN, and more particularly, in one embodiment the administered biologically active IFN is human alpha IFN.

Abstract: A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure. The first fin structure and the second fin structure are both disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction in plan view. A first void is formed in the source/drain structure, and a second void is formed in the source/drain structure and located above the first void.

Abstract: The invention provides enrichment platform devices for size-based capture of particles in solution. The enrichment platform device is useful for label-free capture of any particle. The invention relates to enrichment platform devices using nanowires and vertically aligned carbon nanotubes. The invention provides methods for making the enrichment platform devices. The invention provides methods for using the enrichment platform devices for filtering particles, capturing particles, concentrating particles, and releasing viable particles.