Abstract: A method and a system for controlling a rectifier can obtain a predicted switching interval. The method includes steps of: receiving frequency information and line information of a power generator, the line information including a switching point where a voltage or current crosses zero and a switching interval based on the frequency information; obtaining a predicted switching interval according to the frequency information and the line information, and obtaining a feedback signal according to two terminals of at least one component of the rectifier; and switching a switching signal of the rectifier within the predicted switching interval according to the feedback signal.

Abstract: A semiconductor structure includes a substrate, first gate structures and second gate structures over the substrate, third epitaxial semiconductor features proximate the first gate structures, and fourth epitaxial semiconductor features proximate the second gate structures. The first gate structures have a greater pitch than the second gate structures. The third and fourth epitaxial semiconductor features are at least partially embedded in the substrate. A first proximity of the third epitaxial semiconductor features to the respective first gate structures is smaller than a second proximity of the fourth epitaxial semiconductor features to the respective second gate structures. In an embodiment, a first depth of the third epitaxial semiconductor features embedded into the substrate is greater than a second depth of the fourth epitaxial semiconductor features embedded into the substrate.

Abstract: A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure. The first fin structure and the second fin structure are both disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction in plan view. A first void is formed in the source/drain structure.

Abstract: Provided in one examole hod of manufacturing. The method includes disposing over at least a portion of a substrate a first layer, the substrate comprising a metal material and the first layer comprising a water-borne primer. The method includes disposing over at least a portion of the first layer a second layer, the second layer comprising a water-borne basecoat material. The method includes disposing over at least a portion of the second layer a third layer, the third layer comprising a water-bome topcoat material.

Abstract: A method and a system for controlling a rectifier can obtain a predicted switching interval. The method includes steps of: receiving frequency information and line information of a power generator, the line information including a switching point where a voltage or current crosses zero and a switching interval based on the frequency information; obtaining a predicted switching interval according to the frequency information and the line information, and obtaining a feedback signal according to two terminals of at least one component of the rectifier; and switching a switching signal of the rectifier within the predicted switching interval according to the feedback signal.

Abstract: A photographing lens assembly includes, in order from an object side to an image side: a first, a second, a third, a fourth, a fifth and a sixth lens elements. The first lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, wherein the object-side surface has at least one convex critical point in an off-axis region thereof. The third lens element has an image-side surface being convex in a paraxial region thereof. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power has an object-side surface being concave in a paraxial region thereof, and an image-side surface being convex in a paraxial region thereof. The sixth lens element has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface has at least one convex critical point in an off-axis region thereof.

Abstract: An optical photographing lens assembly includes five lens elements, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element with positive refractive power has a convex object-side surface in a paraxial region thereof. The second lens element with negative refractive power has a convex object-side surface and a concave image-side surface in a paraxial region thereof. The fourth lens element with positive refractive power has a convex image-side surface in a paraxial region thereof. The fifth lens element with negative refractive power has a concave image-side surface in a paraxial region thereof, wherein the image-side surface of the fifth lens element has at least one convex critical point in an off-axial region thereof, and two surfaces of the fifth lens element are both aspheric.

Abstract: Various examples provide a method of making a hydrophobic surface for an object. According to the method, a hydrophobic coating may be applied to an original surface of the object. A microstructure may be formed on the original surface of the object. The hydrophobic surface of the object may be obtained with the microstructure submerged by the hydrophobic coating. The microstructure may be a rough structure including micro-sired portions, and may have greater hardness than the hydrophobic coating.

Abstract: A microphone package structure includes a substrate, sound wave transducer, processing chip, lid, sound aperture, at least one first solder pad and at least one second solder pad. The substrate has a top side, a bottom side and two opposing lateral sides. The top and bottom sides each connect the lateral sides. The sound wave transducer and processing chip are disposed on the top side. The lid covers the substrate to form a chamber for containing the sound wave transducer and the processing chip electrically connected to the substrate and sound wave transducer. The sound aperture is disposed at the substrate or lid. The at least one first solder pad is disposed on the bottom side and in electrical conduction with the processing chip. The at least one second solder pad is disposed on one of the lateral sides and in electrical conduction with the processing chip.

Abstract: A semiconductor device includes a semiconductor substrate, an n-type fin field effect transistor. The n-type fin field effect transistor includes a fin structure, a gate stack, and a source/drain region. The gate stack includes a gate dielectric and a gate electrode. The gate dielectric is disposed in between the fin structure and the gate electrode. The source/drain region includes an epitaxial structure and an epitaxy coat covering the epitaxial structure. The epitaxial structure is made of a material having a lattice constant larger than a channel region. The epitaxy coat is made of a material having a lattice constant lower than the channel region.

Abstract: A rotor driving system has a rotor, a revolution sensor, a sensing circuit, a controller, and a rotor driver. The revolution sensor is configured to sense a revolution frequency of the rotor so as to generate a measurement signal. The sensing circuit is electrically connected to the revolution sensor and configured to convert the measurement signal into a current revolution measured value. The controller is electrically connected to the sensing circuit and configured to generate an estimated revolution frequency based on a historical revolution measured value, the current revolution measured value, and a reference value, and generate a rotor driving signal based on the estimated revolution frequency and a revolution control signal. The rotor driver is electrically connected to the controller and configured to drive the rotor to rotate based on the rotor driving signal.

Abstract: A semiconductor component includes a substrate having a dense zone and a less-dense zone, at least one first FinFET device disposed on the dense zone, and at least one second FinFET device disposed on the less-dense zone, in which a width of a first source/drain region of the first FinFET device is smaller than a width of a second source/drain region of the second FinFET device.

Abstract: An optical imaging module includes six lens elements, the six lens elements being, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. The first lens element has negative refractive power. The second lens element has an image-side surface being concave. The third lens element has an image-side surface being convex. The fourth lens element has positive refractive power. The fifth lens element with negative refractive power has an object-side surface being concave and an image-side surface being convex. The sixth lens element has an image-side surface being concave, wherein an object-side surface and the image-side surface of the sixth lens element are both aspheric, and the image-side surface of the sixth lens element includes at least one inflection point.

Abstract: A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure and a dielectric layer disposed on an upper surface of the isolation insulating layer. Both the first fin structure and the second fin structure are disposed over the substrate, and extend in a first direction in plan view. The gate structure is disposed over parts of the first and second fin structures, and extends in a second direction crossing the first direction. The first and second fin structures not covered by the gate structure are recessed below the upper surface of the isolation insulating layer. The source/drain structure is formed over the recessed first and second fin structures. A void is formed between the source/drain structure and the dielectric layer.

Abstract: A MEMS microphone package includes a substrate including a base layer, a sound hole cut through the base layer, a conduction part arranged on the base layer, a sidewall connected with one end thereof to the top surface of the base layer and having a conducting line electrically connected to the conduction part, a cover plate connected to an opposite end of the sidewall and having a solder pad and a third contact disposed in conduction with the solder pad and electrically connected to the conducting line, an acoustic wave sensor mounted on the top surface of the base layer to face toward the sound hole, a processor chip mounted on the top surface of the base layer and electrically connected to the acoustic wave sensor and the conduction part, and one or multiple electronic components electrically bonded to the cover plate.

Abstract: A MEMS microphone package includes a substrate including a sound hole, a first conduction part and a second conduction part, a sidewall connected with one end thereof to the substrate and having a conducting line electrically connected to the second conduction part, a cover plate connected to an opposite end of the sidewall and defining a chamber therein and having a solder pad and a fifth contact in conduction with the solder pad and electrically connected to the conducting line, a processor chip mounted on the substrate inside the chamber and electrically connected to the first conduction part and the second conduction part, and a acoustic wave sensor mounted on the substrate inside the chamber to face toward the sound hole and electrically connected to the first conduction part using flip-chip technology.

Abstract: A MEMS microphone package includes a substrate including a base layer, a sound hole cut through opposing top and bottom surfaces of the base layer, a conduction part arranged on the base layer and a notch located on the top surface of the base layer, a sidewall connected with one end thereof to the top surface of the base layer and having a conducting line electrically connected to the conduction part, a cover plate connected to an opposite end of the sidewall and having a solder pad and a third contact disposed in conduction with the solder pad and electrically connected to the conducting line, a processor chip mounted in the notch and electrically connected to the conduction part, and an acoustic wave sensor mounted on the base layer to face toward the sound hole and electrically connected to the processor chip.

Abstract: A microelectromechanical microphone package structure includes a substrate, sidewall, lid, sound wave transducer and processing module. The substrate has a plate, sound aperture penetrating the plate, and conduction portion disposed on the plate. The sidewall has one end disposed on the plate and has a conduction circuit electrically connected to the conduction portion. A chamber is defined between the lid, sidewall and plate. The lid has at least one solder pad and a third contact in electrical conduction with each other. The third contact is electrically connected to the conduction circuit. The sound wave transducer is disposed on the plate and in the chamber and aligned with the sound aperture. The processing module, which is disposed on the plate and in the chamber and electrically connected to the sound wave transducer and conduction portion, includes a processing chip and electronic component which are stacked and disposed on the plate.

Abstract: A microphone package structure includes a substrate, sound wave transducer, processing chip, lid, sound aperture, at least one first solder pad and at least one second solder pad. The substrate has a top side, a bottom side and two opposing lateral sides. The top and bottom sides each connect the lateral sides. The sound wave transducer and processing chip are disposed on the top side. The lid covers the substrate to form a chamber for containing the sound wave transducer and the processing chip electrically connected to the substrate and sound wave transducer. The sound aperture is disposed at the substrate or lid. The at least one first solder pad is disposed on the bottom side and in electrical conduction with the processing chip. The at least one second solder pad is disposed on one of the lateral sides and in electrical conduction with the processing chip.

Abstract: A an optical module integrated package includes a substrate, a light-receiving chip mounted in a light-receiving region of the substrate, an electronic component mounted in the substrate, a cover mounted on the substrate and having a light-receiving chip disposed above the light-receiving hole, and a lens fixedly mounted in the light-receiving hole of the cover. Thus, the optical module integrated package not only have the chip and the electronic component integrated therein to reduce the packaging cost and to improve the yield but also provide a light filtering, focusing or diffusing effect to enhance optical recognition accuracy.