Abstract: A semiconductor component includes a thinned semiconductor die having protective polymer layers on up to six surfaces. The component also includes contact bumps on the die embedded in a circuit side polymer layer, and terminal contacts on the contact bumps in a dense area array. A method for fabricating the component includes the steps of providing a substrate containing multiple dice, forming trenches on the substrate proximate to peripheral edges of the dice, and depositing a polymer material into the trenches. In addition, the method includes the steps of planarizing the back side of the substrate to contact the polymer filled trenches, and cutting through the polymer trenches to singulate the components from the substrate. Prior to the singulating step the components can be tested and burned-in while they remain on the substrate.

Abstract: The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.

Abstract: A semiconductor component includes back side pin contacts fabricated using a circuit side fabrication method. The component also includes a thinned semiconductor die having a pattern of die contacts, and conductive members formed by filled openings in the die contacts and the die. In addition, the pin contacts are formed by terminal portions of the conductive members. The fabrication method includes the steps of forming the openings and the conductive members, and then thinning and etching the die to form the pin contacts. An alternate embodiment female component includes female conductive members configured to physically and electrically engage pin contacts on a mating component of a stacked assembly.

Abstract: A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

Abstract: A piston ring for use at temperatures above 350° F. at pressures greater than or equal to about 2000 psi, comprising a gap having a gap width about 1.4 to about 2.0 times greater than a thickness of the piston ring; a height about 4.5 to about 6.4 times larger than the thickness, and a leading edge characterized by an arc having a radius of curvature of less than or equal to about 4 times the height. The piston ring may be formed of a material comprising cobalt, chromium, tungsten, and carbon. A gas compressor and method of sealing a piston using the above piston ring is also provided for.

Abstract: An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same, are disclosed. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element. An insulative material is applied over the lower electrode such that an upper surface of the tip is exposed. A chalcogenide material and an upper electrode are either formed atop the tip, or the tip is etched into the insulative material and the chalcogenide material and upper electrode are deposited within the recess. This allows the memory cells to be made smaller and allows the overall power requirements for the memory cell to be minimized.

Abstract: A fuel cell system made up of a plurality of fuel cells. Each cell includes a fuel inlet, an oxidant inlet, a fuel side product outlet and an oxidant side product outlet. A common fuel supply line is provided for the fuel inlets. A common oxidant supply line is provided for the oxidant inlets. A common product purging mechanism is coupled to the outlets for purging the same of unused fuel, unused oxidant, fuel side product and oxidant side product. The product purging mechanism includes valving structure operable to selectively and independently open the outlets of a given cell. A method for operating such a fuel cell system includes supplying fuel to the fuel inlets from a common source of fuel and supplying an oxidant to the oxidant inlets from a common source of oxidant. The outlets of a given cell are selectively opened to purge fuel product and oxidant product from the given cell while the outlets of other cells are kept closed.

Abstract: A chemical mechanical polishing slurry includes liquid and abrasive solid components, with at least some of the abrasive solid component comprising individually non-homogeneous abrasive particles. In one implementation, the non-homogeneous abrasive particles comprise an innermost portion and an outermost portion, with the innermost and outermost portions comprising different materials. In one implementation, the material of the outermost portion is harder than the material of the innermost portion. In one implementation, the material of the outermost portion comprises TiN and the material of the innermost portion comprises SiO2. In one implementation, the material of the outermost portion comprises WN and the material of the innermost portion comprises TiN. In one implementation, the material of the outermost portion is softer than the material of the innermost portion.

Abstract: An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first deposition precursor is fed to the chamber under first vacuum conditions effective to form a first monolayer on the substrate. The first vacuum conditions are maintained at least in part by a first non-roughing vacuum pump connected to the chamber and through which at least some of the first deposition precursor flows. After forming the first monolayer, a purge gas is fed to the chamber under second vacuum conditions maintained at least in part by a second non-roughing vacuum pump connected to the chamber which is different from the first non-roughing vacuum pump and through which at least some of the purge gas flows. An atomic layer deposition apparatus is disclosed.

Abstract: The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

Abstract: The invention is directed to a memory card that includes a device connector and a host connector that conform to a device connection standard and a host connector standard respectively. The dimensions of the memory card may substantially conform to dimensions of a memory card standard. However, there may be irregularities in the shape of the memory card that are not consistent with the form factor of the memory card standard. The memory card may further include a cover to fit over the host connector. In that case, the housing and the cover collectively define a form factor of the memory card that substantially conforms to a form factor of the memory card standard.

Abstract: In an embodiment of the invention, a method is provided for storing multimedia information to a medium. In another embodiment, a method is provided for retrieving multimedia information stored on a medium.

Abstract: A synthetic aperture radar (SAR) image of a wide coverage area is acquired during a frame containing a first plurality of ambiguities induced in the SAR image from radar scatterers within the area. The area is illuminated with radar pulses and a segmented receive antenna oriented towards the area. The segmented receive antenna has a second plurality of sub-apertures, where the second plurality of sub-apertures is larger than the first plurality of ambiguities. Each sub-aperture has its own receiver. The digital stream from each receiver is stored in a computer for the duration of the frame to obtain frame data. A SAR image is extracted from the frame data. The first plurality of ambiguities are identified from analysis of the frame data, and a correction is computed to account for the first plurality of ambiguities contained within the synthetic aperture image. The correction is applied to reduce distortions caused by the ambiguities in the SAR image.

Abstract: A particle forming method includes feeding a first set of precursors to a first energy application zone. Energy is applied to the first set of precursors in the first energy application zone effective to react and form solid particles from the first set of precursors. The application of any effective energy to the solid particles is ceased, and the solid particles and a second set of precursors are fed to a second energy application zone. Energy is applied to the second set of precursors in the second energy application zone effective to react and form solid material about the solid particles from the second set of precursors. At least one precursor is fed to at least one of the first and second energy application zones as a liquid. Other aspects are contemplated.

Abstract: A locking device locking device (e.g., lock and lock assembly) includes a drive motor connected to a finite power supply, the drive motor including a shaft and a predetermined number of windings, and a threaded rod axially connected to the shaft, the rod having a predetermined thread pitch. The number of windings and/or the thread pitch are selected to maximize a life of the finite power supply.

Abstract: A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.

Abstract: The invention is directed to a memory card that includes a host connector conforming to a host connection standard protruding from a flexible housing. The flexible housing conforms to a form factor of a memory card standard, substantially similar to a credit card with an increased thickness to accommodate the host connector and allow a memory to fit within the housing. The host connector facilitates direct coupling of the memory card to a computing device without an adapter or reader. The memory card may include a smart card contact conforming to an ISO 7816 smart card standard that allows the memory card to be backward compatible with conventional smart card readers. Unlike conventional memory cards, the flexible memory card is compatible with smart card applications, and unlike conventional smart cards, the flexible memory card includes a powerful, internal memory.

Abstract: The present disclosure provides methods for preparing samples for atom probe analysis and methods for analyzing such samples. In one exemplary implementation, a surface of the sample may be positioned with respect to a laser source and laser energy may be directed from the laser source toward the sample surface, removing material from the sample to define an annulus about a sample column. The sample column may be provided with a reduced-diameter apex at its outward end, e.g., by etching. This apex may be juxtaposed with an electrode of an atom probe and material may be selectively removed from the apex for analysis by controlling energy delivered to the apex, e.g., by the electrode.

Abstract: Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers are disclosed herein. In one embodiment, the system includes a gas phase reaction chamber, a first exhaust line coupled to the reaction chamber, first and second traps each in fluid communication with the first exhaust line, and a vacuum pump coupled to the first exhaust line to remove gases from the reaction chamber. The first and second traps are operable independently to individually and/or jointly collect byproducts from the reaction chamber. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.