Abstract: A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

Abstract: An apparatus and method for attaching a semiconductor die to a lead frame wherein the electric contact points of the semiconductor die are relocated to the periphery of the semiconductor die through a plurality of conductive traces. A plurality of leads extends from the lead frame over the conductive traces proximate the semiconductor die periphery and directly attaches to and makes electrical contact with the conductive traces in a LOC arrangement. Alternately, a connector may contact a portion of the conductive trace to make contact therewith.

Abstract: The invention includes a process whereby a solvent is utilized to remove soluble portions of a resist, and subsequently the solvent can be removed with a gas-fortified liquid. In particular aspects, the gas-fortified liquid emits bubbles during the removal of the solvent. Additionally, the gas-fortified liquid can be utilized to remove residual resist scum, and in such aspects the gas-fortified liquid can emit bubbles during the scum removal.

Abstract: A user command communicating at least one log record search key is received from a user. A first set of one or more log records matching the log record search key is retrieved. Utilizing one or more fields from these log records, additional search criteria is dynamically composed. A second set of one or more log records matching the additional search criteria is retrieved from the DBMS log file wherein this second set of log records is logically related to the first set of log records and wherein the second set of log records is void of the log record search key. A log retrieval routine or tool deploying the above method is hereinafter referred to as a “self-learning log retrieval tool”.

Abstract: An apparatus for limiting volatile computer memory based on available energy in an auxiliary power source comprises an energy monitor module configured to determine an amount of available energy in the auxiliary power source. Also provided is a memory status module configured to determine an amount of volatile computer memory allocated for use in a computer and a memory adjustment module configured to adjust the amount of volatile computer memory allocated for use in the computer based on the amount of available energy in the auxiliary power source.

Abstract: The present invention relates to novel ?-substituted-?-aminoethylphosphonate derivatives and their uses for lowering plasma levels of apo (a), Lp(a), apo B, apo B associated lipoproteins (low density lipoproteins and very low density lipoproteins) and for lowering plasma levels of total cholesterol.

Abstract: The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced to a second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.

Abstract: In one aspect, a substrate is positioned within a deposition chamber. Gaseous precursors comprising TaF5 and at least one of H2O and O3 are fed to the deposition chamber under conditions effective to deposit a Ta2O5 comprising layer on the substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate within the chamber to form a first species monolayer from a gaseous first precursor comprising TaF5. The chemisorbed first species is contacted with a gaseous second precursor comprising at least one of H2O and O3 to react with the first species to form a monolayer comprising Ta and O. The chemisorbing and contacting are successively repeated under conditions effective to form a mass of material on the substrate comprising Ta2O5.

Abstract: The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method of depositing a reaction product on each of a batch of workpieces positioned in a process chamber in a spaced-apart relationship. A first gas may be delivered to an elongate first delivery conduit that includes a plurality of outlets spaced along a length of the conduit. A first gas flow may be directed by the outlets to flow into at least one of the process spaces between adjacent workpieces along a first vector that is transverse to the direction in which the workpieces are spaced. A second gas may be delivered to an elongate second delivery conduit that also has outlets spaced along its length. A second gas flow of the second gas may be directed by the outlets to flow into the process spaces along a second vector that is transverse to the first direction.

Abstract: A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

Abstract: A method and apparatus for running a whipstock into a well bore attached to a combination mill and drill bit, releasing the mill/bit from the whipstock, milling a window in the casing, and drilling a lateral well bore, all in one trip. The mill/bit is provided with a primary cutting structure better suited for milling through the casing, and a secondary cutting structure, better suited for drilling through the earth formation. The secondary cutting structure is initially smaller in diameter than the primary cutting structure. The whipstock can be attached to the mill/bit with a shear bolt supported by a boss on the whipstock, with the boss designed to arrest axial motion of the mill/bit after shearing of the bolt.

Abstract: The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.

Abstract: The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.

Abstract: The present disclosure provides methods and apparatus that may be used to process microfeature workpieces, e.g., semiconductor wafers. Some aspects have particular utility in depositing TiN in a batch process. One implementation involves pretreating a surface of a process chamber by contemporaneously introducing first and second pretreatment precursors (e.g., TiCl4 and NH3) to deposit a pretreatment material on a the chamber surface. After the pretreatment, the first microfeature workpiece may be placed in the chamber and TiN may be deposited on the microfeature workpiece by alternately introducing quantities of first and second deposition precursors.

Abstract: The invention is directed to a memory card that includes two or more connectors that conform to different connector standards. In one embodiment, the first connector conforms to a device communication connector (DCC) standard to facilitate direct coupling of the memory card to a portable device such as a voice recorder, a digital video camcorder, a digital camera, a personal digital assistant (PDA), a cellular phone, a video game, a digital television, a photo printer, or the like. The second connector may comprise a host computer connector (HCC) for direct coupling to a computing device without an adapter or reader.

Abstract: A semiconductor component includes back side pin contacts fabricated using a circuit side fabrication method. The component also includes a thinned semiconductor die having a pattern of die contacts, and conductive members formed by filled openings in the die contacts and the die. In addition, the pin contacts are formed by terminal portions of the conductive members. The fabrication method includes the steps of forming the openings and the conductive members, and then thinning and etching the die to form the pin contacts. An alternate embodiment female component includes female conductive members configured to physically and electrically engage pin contacts on a mating component of a stacked assembly.

Abstract: A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.

Abstract: A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.

Abstract: An improved semiconductor device structure comprises insertion of a semiconductor wafer into a high-pressure heated chamber and the deposition of a low melting-point aluminum material into a contact hole or via and over an insulating layer overlying a substrate of the wafer. The wafer is heated up to the melting point of the aluminum material and the chamber is pressurized to force the aluminum material into the contact holes or vias and eliminate voids present therein. A second layer of material, comprising a different metal or alloy, which is used as a dopant source, is deposited over an outer surface of the deposited aluminum material layer and allowed to diffuse into the aluminum material layer in order to form a homogenous aluminum alloy within the contact hole or via. A semiconductor device structure made according to the method is also disclosed.

Abstract: Systems and methods for implementing a retail transaction at a digital image forming device are disclosed. Paper and blank electronic media may be purchased at the digital image forming device. The electronic media includes CD-ROMs, DVD-ROMs and floppy disks. A computer file may be transferred to the storage media as part of the transaction. The file may be transferred from any external electronic media. The file may be transferred from any storage media controlled by a portable digital device, such as a digital camera, a cell phone, a portable computer or a PDA. Alternately, the file may be transferred from a remote storage device accessible via the Internet to either media sold at or external to and in communication with the digital image forming device.