Patents by Inventor Ward Parkinson

Ward Parkinson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Programmable Resistance Memory with Feedback Control
    Publication number: 20110242887
    Abstract: A programmable resistance memory employs a feedback control circuit to regulate the programming current supplied to a selected programmable resistance memory element. The programmable resistance memory may be a phase change memory. The feedback control circuit monitors and controls the characteristics of a current pulse employed to program a memory cell.
    Type: Application
    Filed: June 13, 2011
    Publication date: October 6, 2011
    Inventor: Ward Parkinson
  • Immunity of Phase Change Material to Disturb in the Amorphous Phase
    Publication number: 20110240943
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Application
    Filed: June 13, 2011
    Publication date: October 6, 2011
    Applicant: Ovonyx, Inc.
    Inventors: George Gordon, Semyon D. Savransky, Ward Parkinson, Sergey A. Kostylev, James Reed, Tyler Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Method for reading semiconductor memories and semiconductor memory
    Patent number: 8018786
    Abstract: A phase change memory cells including a memory element or a threshold device is read using a read current which does not threshold either the memory element or the threshold device in the case of both a set and a reset memory element. As a result, higher currents may be avoided, increasing read endurance. A sensing circuit includes a charging rate detector coupled to a selected address line and sensing a rate of change of a voltage on the selected address line.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: September 13, 2011
    Assignee: STMicroelectroncis S.r.l.
    Inventor: Ward Parkinson
  • Programmable Resistance Memory
    Publication number: 20110211391
    Abstract: A memory includes an interface through which it provides access to memory cells, such as phase change memory cells. Such access permits circuitry located on a separate integrated circuit to provide access signals, including read and write signals suitable for binary or multi-level accesses.
    Type: Application
    Filed: May 10, 2011
    Publication date: September 1, 2011
    Inventor: Ward Parkinson
  • Immunity of phase change material to disturb in the amorphous phase
    Patent number: 7990761
    Abstract: Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: August 2, 2011
    Assignee: Ovonyx, Inc.
    Inventors: George Gordon, Semyon D. Savransky, Ward Parkinson, Sergey A. Kostylev, James Reed, Tyler Lowrey, Ilya V. Karpov, Gianpaolo Spadini
  • Page mode access for non-volatile memory arrays
    Patent number: 7983104
    Abstract: An array of non-volatile memory cells arranged in logical columns and logical rows, and associated circuitry to enable reading or writing one or more memory cells on a row in parallel. In some embodiments, the array of memory cells may include a phase change material. In some embodiments, the circuitry may include a write driver, a read driver, a sense amplifier, and circuitry to isolate the memory cells from the sense amplifier with extended refresh.
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: July 19, 2011
    Assignee: Ovonyx, Inc.
    Inventors: Ward Parkinson, Yukio Fuji
  • Programmable resistance memory with feedback control
    Patent number: 7961495
    Abstract: A programmable resistance memory employs a feedback control circuit to regulate the programming current supplied to a selected programmable resistance memory element. The programmable resistance memory may be a phase change memory. The feedback control circuit monitors and controls the characteristics of a current pulse employed to program a memory cell.
    Type: Grant
    Filed: October 15, 2008
    Date of Patent: June 14, 2011
    Assignee: Ovonyx, Inc.
    Inventor: Ward Parkinson
  • Programmable resistance memory with interface circuitry for providing read information to external circuitry for processing
    Patent number: 7957207
    Abstract: A memory includes an interface through which it provides access to memory cells, such as phase change memory cells. Such access permits circuitry located on a separate integrated circuit to provide access signals, including read and write signals suitable for binary or multi-level accesses.
    Type: Grant
    Filed: March 10, 2009
    Date of Patent: June 7, 2011
    Assignee: Ovonyx, Inc.
    Inventor: Ward Parkinson
  • Programmable Resistance Memory
    Publication number: 20110128766
    Abstract: A nonvolatile integrated circuit memory includes mode control circuitry that allows it to be configured as any of a plurality of memory types.
    Type: Application
    Filed: November 30, 2009
    Publication date: June 2, 2011
    Inventor: Ward Parkinson
  • Programmable Resistance Memory
    Publication number: 20110122675
    Abstract: A nonvolatile memory includes write circuitry that writes to a selected memory element and, in parallel, to a data latch. The memory is configured to compare the current memory address to the previous memory address and to enable a read operation from the data latch rather than a selected memory element if the current and previous memory addresses are the same.
    Type: Application
    Filed: November 25, 2009
    Publication date: May 26, 2011
    Inventor: Ward Parkinson
  • Programmable matrix array with chalcogenide material
    Patent number: 7839674
    Abstract: A chalcogenide material is proposed for programming the cross-connect transistor coupling interconnect lines of an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer in series with the select device or a phase change material. The matrix array may be used in a programmable logic device.
    Type: Grant
    Filed: October 2, 2008
    Date of Patent: November 23, 2010
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Ward Parkinson, Guy Wicker
  • Chalcogenide switch with laser recrystallized diode isolation device and use thereof in three dimensional memory arrays
    Patent number: 7838864
    Abstract: A three-dimensional memory array formed of one or more two-dimensional memory arrays of one-time programmable memory elements arranged in horizontal layers and stacked vertically upon one another; and a two-dimensional memory array of reprogrammable phase change memory elements stacked on the one or more two-dimensional memory arrays as the top layer of the three-dimensional memory array.
    Type: Grant
    Filed: August 8, 2006
    Date of Patent: November 23, 2010
    Assignee: Ovonyx, Inc.
    Inventor: Ward Parkinson
  • Method and apparatus for accessing a multi-mode programmable resistance memory
    Patent number: 7808807
    Abstract: A memory is configurable among a plurality of operational modes and types of interfaces. The operational modes may dictate the number of storage levels to be associated with each cell within the memory's storage matrix. Individual operational modes may be matched to individual interfaces, operated one at a time or in parallel.
    Type: Grant
    Filed: March 13, 2008
    Date of Patent: October 5, 2010
    Assignee: Ovonyx, Inc.
    Inventors: Ward Parkinson, Stefan Lai
  • Programmable resistance memory
    Publication number: 20100232205
    Abstract: A memory includes an interface through which it provides access to memory cells, such as phase change memory cells. Such access permits circuitry located on a separate integrated circuit to provide access signals, including read and write signals suitable for binary or multi-level accesses.
    Type: Application
    Filed: March 10, 2009
    Publication date: September 16, 2010
    Inventor: Ward Parkinson
  • Accessing a phase change memory
    Patent number: 7778064
    Abstract: A memory employs a low-level current source to access a phase change memory cell. The current source charges an access capacitor in order to store sufficient charge for an ensuing access. When a memory cell is accessed, charge stored on the capacitor is discharged through the phase change memory, supplying a current to the phase change memory cell that is sufficient for the intended access operation and greater than that provided directly by the current source.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: August 17, 2010
    Assignee: Ovonyx, Inc.
    Inventors: Ward Parkinson, Tyler Lowrey
  • METHOD FOR READING SEMICONDUCTOR MEMORIES AND SEMICONDUCTOR MEMORY
    Publication number: 20100157666
    Abstract: A phase change memory cells including a memory element or a threshold device is read using a read current which does not threshold either the memory element or the threshold device in the case of both a set and a reset memory element. As a result, higher currents may be avoided, increasing read endurance. A sensing circuit includes a charging rate detector coupled to a selected address line and sensing a rate of change of a voltage on the selected address line.
    Type: Application
    Filed: March 3, 2010
    Publication date: June 24, 2010
    Applicant: STMICROELECTRONICS S.R.L.
    Inventor: Ward Parkinson
  • Page Mode Access for Non-volatile Memory Arrays
    Publication number: 20100110782
    Abstract: An array of non-volatile memory cells arranged in logical columns and logical rows, and associated circuitry to enable reading or writing one or more memory cells on a row in parallel. In some embodiments, the array of memory cells may include a phase change material. In some embodiments, the circuitry may include a write driver, a read driver, a sense amplifier, and circuitry to isolate the memory cells from the sense amplifier with extended refresh.
    Type: Application
    Filed: January 7, 2010
    Publication date: May 6, 2010
    Inventors: Ward Parkinson, Yukio Fuji
  • Programmable matrix array with phase-change material
    Patent number: 7706178
    Abstract: A phase-change material is proposed for coupling interconnect lines an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer between the phase change material and at least one of the lines. The matrix array may be used in a programmable logic device. The logic portions of the programmable logic device may be tri-stated.
    Type: Grant
    Filed: February 6, 2008
    Date of Patent: April 27, 2010
    Assignee: Ovonyx, Inc.
    Inventor: Ward Parkinson
  • Programmable resistance memory with feedback control
    Publication number: 20100091559
    Abstract: A programmable resistance memory employs a feedback control circuit to regulate the programming current supplied to a selected programmable resistance memory element. The programmable resistance memory may be a phase change memory. The feedback control circuit monitors and controls the characteristics of a current pulse employed to program a memory cell.
    Type: Application
    Filed: October 15, 2008
    Publication date: April 15, 2010
    Inventor: Ward Parkinson
  • Programmable Matrix Array with Chalcogenide Material
    Publication number: 20100091561
    Abstract: A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.
    Type: Application
    Filed: December 17, 2009
    Publication date: April 15, 2010
    Inventors: Tyler Lowrey, Ward Parkinson, Guy Wicker