Patents by Inventor Wei Peng

Wei Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230065663
    Abstract: An integrated circuit includes multiple backside conductive layers disposed over a backside of a substrate. The multiple backside conductive layers each includes conductive segments. The conductive segments in at least one of the backside conductive layers are configured to transmit one or more power signals. The conductive segments of the multiple backside conductive layers cover select areas of the backside of the substrate, thereby leaving other areas of the backside of the substrate exposed.
    Type: Application
    Filed: August 31, 2021
    Publication date: March 2, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Te-Hsin CHIU, Shih-Wei PENG, Wei-Cheng LIN, Jiann-Tyng TZENG, Jiun-Wei LU
  • Patent number: 11591342
    Abstract: Disclosed in the present invention are a heterocyclic compound, an application thereof and a pharmaceutical composition comprising the same. Provided by the present invention are a heterocyclic compound represented by formula I or a pharmaceutically acceptable salt thereof. The compound has a novel structure and a good inhibitory activity against autotaxin (ATX).
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: February 28, 2023
    Assignee: SUZHOU SINOVENT PHARMACEUTICALS CO., LTD.
    Inventors: Yonghan Hu, Dongdong Wu, Wei Peng, Xin Li, Fan Hu, Bin Huang, Jinlian Zhu, Yuchuan Wu
  • Publication number: 20230053139
    Abstract: A device including first nanosheet structures each including a first number of nanosheets, second nanosheet structures each including a second number of nanosheets that is different than the first number of nanosheets, and a plurality of rows including first rows and second rows. Where each of the first nanosheet structures is in a respective one of the first rows, each of the second nanosheet structures is in a respective one of the second rows, at least two of the first rows are adjacent one another, and at least two of the second rows are adjacent one another.
    Type: Application
    Filed: January 21, 2022
    Publication date: February 16, 2023
    Inventors: Kuan-Yu Chen, Wei-Cheng Tzeng, Shih-Wei Peng, Wei-Cheng Lin, Jiann-Tyng Tzeng
  • Publication number: 20230049741
    Abstract: According to an aspect of an embodiment, operations for detection of API compatibility across software versions are provided. The operations may include receiving an input associated with a software application. The operations may further include determining first information. The operations may further include extracting a set of data from one or more web-based sources based on the determined first information. The operations may further include executing a set of operations including one or more pattern searching operations on the extracted set of data to generate a compatibility result. The operations may further include controlling a display device based on the generated compatibility result. The display device may be controlled to display assistive information which informs about a compatibility of the one or more APIs or the functions used in the source code of the software application with respect to the second version of the software.
    Type: Application
    Filed: August 6, 2021
    Publication date: February 16, 2023
    Applicant: FUJITSU LIMITED
    Inventors: LEI LIU, Wei-Peng CHEN
  • Publication number: 20230050653
    Abstract: The compound represented by formula (I), and racemates, stereoisomers, tautomers, isotopic markers, nitrogen oxides, solvates, polymorphs, metabolites, esters, pharmaceutically acceptable salts, or prodrugs thereof have ROCK inhibitory activity. The compound represented by formula (1) has good safety, good metabolic stability, and a low risk of potential hepatotoxicity. Further, the compound represented by formula (I) has a simple preparation method and is easy to purify, and therefore has good application prospects.
    Type: Application
    Filed: November 12, 2020
    Publication date: February 16, 2023
    Inventors: Jinping LI, Jun LOU, Xiaodan GUO, Xian ZENG, Yongkai CHEN, Yihan ZHANG, Wei PENG, Chaodong WANG
  • Patent number: 11581300
    Abstract: A method is disclosed, including the following operations: arranging a first gate structure extending continuously above a first active region and a second active region of a substrate; arranging a first separation spacer disposed on the first gate structure to isolate an electronic signal transmitted through a first gate via and a second gate via that are disposed on the first gate structure, in which the first gate via and the second gate via are arranged above the first active region and the second active region respectively; and arranging a first local interconnect between the first active region and the second active region, in which the first local interconnect is electrically coupled to a first contact disposed on the first active region and a second contact disposed on the second active region.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: February 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Charles Chew-Yuen Young, Chih-Liang Chen, Chih-Ming Lai, Jiann-Tyng Tzeng, Shun-Li Chen, Kam-Tou Sio, Shih-Wei Peng, Chun-Kuang Chen, Ru-Gun Liu
  • Publication number: 20230044773
    Abstract: An online concierge shopping system identifies recipes to users to encourage them to include items from the recipes in orders. The online concierge system generates a recipe vector for each recipe based on items included in a recipe. A dimension of a recipe vector identifies an item included in a corresponding recipe and may include an importance score of the item to the recipe. The importance score of an item to a recipe is based on a term frequency of the item in the recipe and an inverse document frequency of the item across multiple recipes. The online concierge system determines overlap between items in recipe vectors an order vector generated from items included in an order from a user and selects a recipe for the user based on overlapping items in the recipe vector and in the order vector.
    Type: Application
    Filed: August 6, 2021
    Publication date: February 9, 2023
    Inventors: Omar Alonso, Wei Peng
  • Publication number: 20230040094
    Abstract: In some embodiments, an integrated circuit device includes a substrate having a frontside and a backside; one or more active semiconductor devices formed on the frontside of the substrate; conductive paths formed on the frontside of the substrate; and conductive paths formed on the backside of the substrate. At least some of the conductive paths formed on the backside of the substrate, and as least some of the conductive paths formed on the front side of the substrate, are signal paths among the active semiconductor devices. In in some embodiments, other conductive paths formed on the backside of the substrate are power grid lines for powering at least some of the active semiconductor devices.
    Type: Application
    Filed: March 10, 2022
    Publication date: February 9, 2023
    Inventors: Ching-Yu HUANG, Wei-Cheng LIN, Shih-Wei PENG, Jiann-Tyng TZENG, Yi-Kan CHENG
  • Publication number: 20230045167
    Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.
    Type: Application
    Filed: August 5, 2021
    Publication date: February 9, 2023
    Inventors: Guo-Huei WU, Shih-Wei PENG, Wei-Cheng LIN, Hui-Zhong ZHUANG, Chih-Liang CHEN, Li-Chun TIEN, Lee-Chung LU
  • Patent number: 11572166
    Abstract: A method of deploying an unmanned aerial vehicle (UAV) operation system may be provided. A method may include estimating an amount of traffic for one or more routes based on a demand of the one or more routes. The method may also include determining a required number of docking stations for each route of the one or more routes based on the estimated amount of traffic for the route, a distance of the route, and a maximum travel distance for a UAV. Further, the method may include installing the required number of docking stations for each route of the one or more routes, wherein each docking station of the required number of docking stations including at least one of a power supply, a wireless charger, a communication module, a control module, and a camera.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: February 7, 2023
    Assignee: FUJITSU LIMITED
    Inventors: Wei-Peng Chen, Daisuke Mashima
  • Patent number: 11574901
    Abstract: A semiconductor device includes a cell. The cell includes an active area, gates, at least one gate via and at least one contact via. The active area includes forbidden regions. The gates are disposed across the active area. The at least one gate via is coupled with one of the gates. The at least one contact via is coupled with at least one conductive segment each corresponding to a source/drain of a transistor. In a layout view, one of the forbidden regions abuts a region of an abutted cell in which at least one of a gate via or a contact via of the abutted cell is disposed. In a layout view, the least one of the at least one gate via or the at least one contact via is arranged within the active area and outside of the forbidden regions. A method is also disclosed herein.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: February 7, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Wei Peng, Jiann-Tyng Tzeng
  • Patent number: 11569167
    Abstract: A method of manufacturing a semiconductor device including: arranging a first and a second gate strip separating in a first distance, wherein each of the first and the second gate strip is a gate terminal of a transistor; depositing a first contact via on the first gate strip; forming a first conductive strip on the first contact via, wherein the first conductive strip and the first gate strip are crisscrossed from top view; arranging a second and a third conductive strip, above the first conductive strip, separating in a second distance, wherein each of the second and the third conductive strip is free from connecting to the first conductive strip, the first and the second conductive strip are crisscrossed from top view. The first distance is twice as the second distance. A length of the first conductive strip is smaller than two and a half times as the first distance.
    Type: Grant
    Filed: December 8, 2020
    Date of Patent: January 31, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Shih-Wei Peng, Hui-Ting Yang, Wei-Cheng Lin, Jiann-Tyng Tzeng
  • Publication number: 20230024758
    Abstract: A light-emitting device includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack includes a light-emitting layer. The DBR structure is disposed on the semiconductor light-emitting stack and includes a plurality of first dielectric material layers and a plurality of second dielectric material layers that are alternately stacked on the semiconductor light-emitting stack. The first dielectric material layer has a first refractive index, and the second dielectric material layer has a second refractive index. The first refractive index is lower than the second refractive index. The second dielectric material layer has an optical thickness that is smaller than that of the first dielectric material layer.
    Type: Application
    Filed: September 29, 2022
    Publication date: January 26, 2023
    Inventors: Qing WANG, Quanyang MA, Jiangbin ZENG, Dazhong CHEN, Ling-Yuan HONG, Kang-Wei PENG, Su-Hui LIN
  • Publication number: 20230016635
    Abstract: A semiconductor device includes first, second, and third conductive regions and first and second active regions. The first conductive region has a first width and extends along a first direction. The second conductive region has a second width and extends along the first direction. The first width is greater than the second width. The first active region has a third width and extends along the first direction. The second active region has a fourth width and extends along the first direction. The third width is less than the fourth width. The third conductive region extends along a second direction and is electrically connected to the first conductive region. The second direction is different from the first direction. The first and second active regions are neighboring active regions.
    Type: Application
    Filed: April 1, 2022
    Publication date: January 19, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu HUANG, Shih-Wei PENG, Wei-Cheng TZENG, Wei-Cheng LIN, Jiann-Tyng TZENG
  • Publication number: 20230017727
    Abstract: A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 ?m and that is not greater than 80 ?m.
    Type: Application
    Filed: September 15, 2022
    Publication date: January 19, 2023
    Inventors: SU-HUI LIN, YU-CHIEH HUANG, FENG WANG, ANHE HE, QING WANG, XIUSHAN ZHU, KANG-WEI PENG, LING-YUAN HONG
  • Publication number: 20230020464
    Abstract: A semiconductor structure includes a plurality of cells. Each cell has a plurality of transistors, a plurality of inner metal lines, two first backside power lines and one second backside power line. The inner metal lines, the first backside power lines and the second backside power line are disposed on a back side of the transistors. The inner metal lines, the first backside power lines and the second backside power line extend along a first axis. The second backside power line is disposed between the two first backside power lines. The inner metal lines are electrically connected to the first backside power lines and the transistors, and electrically connected to the second backside power line and the transistors. The cells are arranged along a second axis, the second axis being vertical to the first axis.
    Type: Application
    Filed: July 16, 2021
    Publication date: January 19, 2023
    Inventors: SHIH-WEI PENG, WEI-CHENG LIN, JIANN-TYNG TZENG
  • Publication number: 20230008779
    Abstract: A semiconductor structure includes: a first gate structure and a second gate structure extending in a first direction; a first base level metal interconnect (M0) pattern extending in a second direction perpendicular to the first direction; a second M0 pattern extending in the second direction; a third M0 pattern located between the first and second gate structures and extending in the first direction, two ends of the third M0 pattern connected to the first M0 pattern and the second M0 pattern, respectively; a fourth M0 pattern and a fifth M0 pattern located between the first and second M0 patterns and extending in the second direction. A distance between the fourth M0 pattern and the first M0 pattern in the first direction is equal to a minimum M0 pattern pitch, and a distance between the fourth M0 pattern and the second M0 pattern is equal to the minimum M0 pattern pitch.
    Type: Application
    Filed: July 9, 2021
    Publication date: January 12, 2023
    Inventors: Shih-Wei Peng, Jiann-Tyng Tzeng, Ken-Hsien Hsieh
  • Patent number: 11550937
    Abstract: A method may include providing access to a first application programming interface (API) provided by a first party and a second API provided by a second party. The method may also include collecting a first set of API data sources related to the first API and a second set of API data sources related to the second API. The method may additionally include using a deep learning model to predict a privacy trustworthiness level for the first API and the second API, and disabling access to the first API based on the privacy trustworthiness level of the first API being below a threshold level.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: January 10, 2023
    Assignee: FUJITSU LIMITED
    Inventors: Mehdi Bahrami, Wei-Peng Chen
  • Patent number: 11553451
    Abstract: A two-way signal positioning method and a two-way signal positioning system thereof are disclosed. The method includes the following steps: controlling a locating device to be measured to transmit a plurality of positioning signals of a plurality of transmission powers; causing a plurality of known locating devices to receive the plurality of positioning signals and return a plurality of response signals to the locating device to be measured; recording the strengths of the plurality of positioning signals, the strengths of the plurality of response signals, the plurality of corresponding receiving times and the coordinates of the plurality of known locating devices to a database; identifying the known locating devices corresponding to the stronger signals; and obtaining a signal strength-distance function and a signal strength-distance standard deviation function from the database so as to identify the device location of the locating device to be measured.
    Type: Grant
    Filed: January 27, 2021
    Date of Patent: January 10, 2023
    Assignee: Gunitech Corp.
    Inventors: Yu-Chee Tseng, Ting-Hui Chiang, Huai-Wei Peng, Chien-Ju Hung, Huan-Ruei Shiu, Chung-Liang Hsu
  • Patent number: 11551955
    Abstract: A substrate processing apparatus includes a process station for processing a substrate; a cassette station integrated with the process station; a substrate carriage equipped for transferring the substrate between said process station and the cassette station through a passage located at an interface between the process station and said cassette station; and a substrate scanner equipped at said interface between the process station and the cassette station for capturing surface image data during transportation of the substrate that passes through the passage.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: January 10, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Che Lai, Hua-Wei Peng, Chia-He Cheng, Ming-Tso Chen, Chao-Chi Lu, Hsin-Hsu Lin, Kuo-Tsai Lo, Kao-Hua Wu, Huan-Hsin Yeh