Abstract: A light-emitting diode includes a semiconductor light-emitting stack, a transparent conductive layer, a first current blocking layer, and a first electrode pad. The transparent conductive layer is disposed on the semiconductor light-emitting stack, and is formed with a first opening defined by an inner edge thereof. The first current blocking layer is formed on the semiconductor light-emitting stack, and is surrounded by and spaced apart from the inner edge of the transparent conductive layer by a first gap. The first electrode pad fully covers the first current blocking layer so as to permit the first electrode pad to be in contact with the semiconductor light-emitting stack through the first gap.

Abstract: Examples of an integrated circuit a having an advanced two-dimensional (2D) metal connection with metal cut and methods of fabricating the same are provided. An example method for fabricating a conductive interconnection layer of an integrated circuit may include: patterning a conductive connector portion on the conductive interconnection layer of the integrated circuit using extreme ultraviolet (EUV) lithography, wherein the conductive connector portion is patterned to extend across multiple semiconductor structures in a different layer of the integrated circuit; and cutting the conductive connector portion into a plurality of conductive connector sections, wherein the conductive connector portion is cut by removing conductive material from the metal connector portion at one or more locations between the semiconductor structures.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

Abstract: An integrated circuit includes a strip structure having a front side and a back side. A gate structure is on the front side of the strip structure. The integrated circuit includes a plurality of channel layers above the front side of the strip structure, wherein each of the plurality of channel layers is enclosed within the gate structure. An isolation structure surrounds the strip structure. The integrated circuit includes a backside via in the isolation structure. An epitaxy structure is on the front side of the strip structure. The integrated circuit includes a contact over the epitaxy structure. The contact has a first portion on a first side of the epitaxy structure. The first portion of the contact extends into the isolation structure and contacts the backside via. The integrated circuit includes a backside power rail on the back side of the strip structure and contacting the backside via.

Abstract: Disclosed is a fused ring compound and an application thereof. Disclosed is a fused ring compound represented by formula I, a pharmaceutically acceptable salt, a stereoisomer, a tautomer, an isotope compound, a crystal form, a nitrogen oxide, a solvate, or a solvate of the pharmaceutically acceptable salt thereof. The fused ring compound of the present invention has high P2X4 antagonistic activity, excellent selectivity, low toxicity and excellent metabolic stability.

Abstract: A server includes a rack, a chassis, and a fan module. The chassis includes a supporting tray, a bracket, and a first electrical connector. The supporting tray is detachably disposed into the rack along an assembling direction substantially perpendicular to a normal direction thereof. The bracket is disposed at an end of the supporting tray. The first electrical connector is disposed on the bracket. The first electrical connector at least has one end movable or detachable with respect to the bracket along a direction substantially perpendicular to the assembling direction. The fan module is detachably disposed in the bracket along the assembling direction. The fan module includes a fan rack, a fan unit, and a second electrical connector. The fan unit is disposed in the fan rack. The second electrical connector is disposed on the fan rack. The second electrical connector is electrically connected to the first electrical connector.

Abstract: A heterocyclic compound, and a pharmaceutical composition thereof, a preparation method therefor, an intermediate thereof and an application thereof. The structure of the heterocyclic compound is as shown in formula (I) below. The compound has CDK7 inhibitory activity, and can be used to treat tumors and other diseases.

Abstract: A method of manufacturing a semiconductor device, including: forming a plurality of gate strips, each gate strip is a gate terminal of a transistor; forming a plurality of first contact vias connected to a part of the gate strips; forming a plurality of first metal strips above the plurality of gate strips; connecting one of the first metal strips to one of the first contact vias; forming a plurality of second metal strips above the plurality of first metal strips, wherein the plurality of second metal strips are co-planar, each second metal strip and one of the first metal strips are crisscrossed from top view; a length between two adjacent gate strips is twice as a length between two adjacent second metal strips, and a length of said one of the first metal strips is smaller than two and a half times as the length between two adjacent gate strips.

Abstract: An integrated circuit includes a first, second and third active region and a first, second and third conductive line. The first, second and third active regions extend in a first direction, and are on a first level of a front-side of a substrate. The second active region is between the first active region and the third active region. The first and second conductive line extend in the first direction, and are on a second level of a back-side of the substrate. The first conductive line is between the first and second active region. The second conductive line is between the second and third active region. The third conductive line extends in the second direction, is on a third level of the back-side of the substrate, overlaps the first and second conductive line, and electrically couples the first and second active regions.

Abstract: According to an aspect of an embodiment, operations for code enrichment for training language models on tasks related to computer programming are provided. The operations include receiving source code data including a computer-executable code and a natural language (NL) text. The operations further include determining blocks of code from the computer-executable code. The operations further include extracting a set of features related to components of the source code data from the blocks of code. The extraction is performed by parsing the blocks of code using Abstract Syntax Tree (AST) data of the blocks of code. The operations further include revising the AST data. The operations further include updating the source code data based on the revised AST data and generating a dataset of NL and abstracted code features as training data based on the updated source code data and further training a language model on a sequence-to-sequence generation task.

Abstract: According to an aspect of an embodiment, operations for code enrichment through metadata for code synthesis are provided. The operations include acquiring package data that include source code files and package metadata. The operations further include extracting additional metadata associated with software package and preparing metadata features based on the package metadata and the additional metadata. The operations further include identifying a set of target portions of a source code included in the source code files and updating one or more source code files using the metadata features. Such files are updated by performing at least one of a revision of existing code comments, and an addition of new code comments for the target portions. The operations further include generating a dataset of natural language (NL) text features and respective code features and training a language model on a sequence-to-sequence generation task.

Abstract: According to an aspect of an embodiment, operations for deep parameter learning for code synthesis are provided. The operations may include receiving a source code file and generating an abstract syntax tree (AST). The operations may further include determining a set of classes, and functions/procedures from the computer-executable code and extracting metadata associated to each component. The operations may further include selecting a subset of functions for which descriptions in the extracted metadata satisfy filtering criteria and updating the computer-executable code by filtering lines of code (LoCs) corresponding to the subset of functions/procedures. The operations may further include generating a dataset of code features and respective metadata features that includes a deep connection between parameters and its usage based on the updated computer-executable code and the metadata generation task.

Abstract: According to an aspect of an embodiment, operations include receiving a set of NL descriptors and a corresponding set of PL codes. The operations further include determining a first vector associated with each NL descriptor and a second vector associated with each PL code, using language models. The operations further include determining a number of a set of semantic code classes to cluster the set of PL codes into the set of semantic code classes, based on the number, the first vector, and the second vector. The operations further include training a multi-class classifier model to predict a semantic code class, from the set of semantic code classes, corresponding to an input NL descriptor. The operations further include selecting an intra-class predictor model based on the predicted semantic code class. The operations further include training the intra-class predictor model to predict a PL code corresponding to the input NL descriptor.

Abstract: A head cap with channel identification includes a head cap, channel identification module, a controlling module, and electrical stimulation modules. The head cap includes the channels therein, and the head cap includes brain regions corresponding to the brain areas of the human being. The electrical stimulation modules disposed in the channels, and the channel identification modules disposed around the peripheral of the channels. The controlling module is electrically coupled to the channel identification modules. When the electrical stimulation modules disposed in some of the channels, the channel identification modules around the peripheral of the channels and the electrical stimulation module are constituted a circuit conduction status or a short circuit status, then the channel identification module transmits a signal to the controlling module to determine the desired sites of the electrical stimulation module where is corresponding to one of the brain areas of the human being according to the signal.

Abstract: A method may include obtaining machine-readable source code. The method may include parsing the source code for one or more code descriptions and identifying a section of the source code corresponding to each of the code descriptions. The method may include determining a description-code pair including a first element representing the code description and a second element representing the section of the source code corresponding to the code description. The method may include generating an augmented programming language corpus based on the description-code pair, the one or more code descriptions, and the source code. The method may include receiving a natural language search query for source-code recommendations, identifying source code from the augmented programming language corpus responsive to the natural language search query, and responding to the natural language search query with the identified source code.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: An integrated circuit includes a first power rail, a second power rail, and a power tap cell. The first power rail is at a first side of the integrated circuit. The second power rail is at a second side of the integrated circuit. The first and second sides are on opposite sides of at least a complementary field effect transistor. The power tap cell is coupled to the first power rail and the second power rail and configured to provide power from the first power rail to the second power rail.

Abstract: A semiconductor device including vertical transistors with a back side power structure, and methods of making the same are described. In one example, a described semiconductor structure includes: a gate structure including a gate pad and a gate contact on the gate pad; a first source region disposed below the gate pad; a first drain region disposed on the gate pad, wherein the first source region, the first drain region and the gate structure form a first transistor; a second source region disposed below the gate pad; a second drain region disposed on the gate pad, wherein the second source region, the second drain region and the gate structure form a second transistor; and at least one metal line that is below the first source region and the second source region, and is electrically connected to at least one power supply.

Abstract: An integrated circuit structure is disclosed, including a gate, a first conductive line and a pair of second conductive lines, and a first feed-through via. The gate is disposed on a front side of the integrated circuit structure and extends in a first direction on a first side of a dielectric layer. The first conductive line and a pair of second conductive lines are disposed on a second side, opposite of the first side, of the dielectric layer and on a back side, opposite of the front side, of the integrated circuit structure. The first conductive line is interposed between the pair of second conductive lines in a layout view. The first feed-through via extends through the dielectric layer in a second direction different from the first direction. The first feed-through via couples the gate to the first conductive line.

Abstract: An integrated circuit includes multiple backside conductive layers disposed over a backside of a substrate. The multiple backside conductive layers each includes conductive segments. The conductive segments in at least one of the backside conductive layers are configured to transmit one or more power signals. The conductive segments of the multiple backside conductive layers cover select areas of the backside of the substrate, thereby leaving other areas of the backside of the substrate exposed.