Abstract: A photographing lens assembly includes eight lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element and an eighth lens element. The first lens element with positive refractive power has an object-side surface being convex in a paraxial region thereof. The sixth lens element has an image-side surface being concave in a paraxial region thereof. The seventh lens element has an image-side surface being concave in a paraxial region thereof. The eighth lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof, and the image-side surface of the eighth lens element has at least one critical point in an off-axis region thereof.

Abstract: Aspects of the disclosure provide an electronic device including processing circuitry and a method. The processing circuitry can determine whether a collision is scheduled in one of a set of carriers at a same time with an SRS transmission switching process including an SRS transmission scheduled in a current carrier in the set of carriers. The set of carriers is activated for the electronic device. When no collision is determined to be scheduled in the set of carriers at the same time with the SRS transmission switching process, the processing circuitry can determine a SRS interruption duration for a victim carrier to be interrupted by the SRS transmission switching process based on a SRS transmission switching duration, a timing between the SRS transmission switching process and the victim carrier, a numerology of the current carrier, and a numerology of the victim carrier and transmit the SRS transmission.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a redistribution layer (RDL) structure, a passive device, and a plurality of dummy items. The encapsulant laterally encapsulates the die. The RDL structure is disposed on the die and the encapsulant. The passive device is disposed on and electrically bonded to the RDL structure. The plurality of dummy items are disposed on the RDL structure and laterally aside the passive device, wherein top surfaces of the plurality of dummy items are higher than a top surface of the passive device.

Abstract: A low-temperature continuous-flow preparation method of bedaquiline includes the following steps. (a) A first feed liquid and a second feed liquid are subjected to a first continuous flow reaction for 30-600 seconds to obtain a first reaction mixture. (b) The first reaction mixture and a third feed liquid are subjected to a second continuous flow reaction for 30-600 seconds to obtain a second reaction mixture. (c) The second reaction mixture was quenched to afford bedaquiline.

Abstract: An electronic apparatus including a package substrate and a structure disposed on and electrically connected to the package substrate through conductive bumps is provided. The material of the conductive bumps includes a bismuth (Bi) containing alloy or an indium (In) containing alloy. In some embodiments, the bismuth (Bi) containing alloy includes Sn—Ag—Cu—Bi alloy. In some embodiments, a concentration of bismuth (Bi) contained in the Sn—Ag—Cu—Bi alloy ranges from about 1 wt % to about 10 wt %. Methods for forming the Sn—Ag—Cu—Bi alloy are also provided.

Abstract: Techniques pertaining to the selective use of BWP interruptions for performing L1 measurements are described. A user equipment (UE) determines whether a resource for use to perform a Layer 1 (L1) measurement for a serving cell of a wireless communication network is within a corresponding active bandwidth part (BWP) of the resource. In response to determining that the resource is outside the corresponding active BWP of the resource, the UE reports to the wireless communication network that the UE needs an interruption to the corresponding active BWP of the resource.

Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

Abstract: A method of forming a fin field-effect transistor device includes: forming a gate structure over a first fin and a second fin; forming, on a first side of the gate structure, a first recess and a second recess in the first fin and the second fin, respectively; and forming a source/drain region in the first and second recesses, which includes: forming a barrier layer in the first and second recesses; forming a first epitaxial material over the barrier layer, where a first portion of the first epitaxial material over the first fin is spaced apart from a second portion of the first epitaxial material over the second fin; forming a second epitaxial material over the first and second portions of the first epitaxial material, where the second epitaxial material extends continuously from the first fin to the second fin; and forming a capping layer over the second epitaxial material.

Abstract: An optical electrical connector includes a casing, a printed circuit board, an electronic chip, a photoelectric conversion component, and a heat sink device. The casing includes an electrical port and an optical port. A receiving space is defined between the electrical port and the optical port. The printed circuit board extends longitudinally along a first direction. The printed circuit board includes a main body portion located in the receiving space and a front end portion exposed in the electrical port. The electronic chip, the photoelectric conversion component and the heat sink device are all accommodated in the receiving space. The electronic chip and the photoelectric conversion component are not only disposed on the printed circuit board, but also electrically connected to the printed circuit board. The heat sink device is disposed on the casing and faces the electronic chip for conducting the heat accumulated on the electronic chip.

Abstract: A photolithographic apparatus includes a particle removing cassette, a pump and a compressor. The particle removing cassette includes a first slit that includes an array of parallel wind blade nozzles arranged along a length of the first slit, protruding from the first slit, and configured to eject and direct pressurized cleaning material to a patterning surface of a mask to remove debris particles on the patterning surface. The pump and the compressor are controlled by a controller to adjust a flow rate and a pressure of the pressurized cleaning material based on an amount of debris particles on the patterning surface of the mask.

Abstract: An optical lens assembly includes seven lens elements which are, in order from object side to image side: first lens element, second lens element, third lens element, fourth lens element, fifth lens element, sixth lens element and seventh lens element. The first lens element has object-side surface having at least one convex shape in off-axis region thereof. The second lens element with positive refractive power has object-side surface being convex in paraxial region thereof. The third lens element has image-side surface being convex in paraxial region thereof. The sixth lens element with positive refractive power has object-side surface being convex in paraxial region thereof. The seventh lens element has image-side surface being concave in paraxial region thereof, and the image-side surface of the seventh lens element has at least one convex critical point in off-axis region thereof. The optical lens assembly has a total of seven lens elements.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.

Abstract: A semiconductor package structure includes a first redistribution layer, a first semiconductor die, a second semiconductor die, a bridge structure, and a plurality of conductive bumps. The first semiconductor die and the second semiconductor die are disposed over the first redistribution layer. The bridge structure is disposed under the first redistribution layer. The first semiconductor die is electrically coupled to the second semiconductor die through the first redistribution layer and the bridge structure. The conductive bumps are disposed under the first redistribution layer and are coupled to the first redistribution layer. The bridge structure is disposed between at least two of the conductive bumps.

Abstract: A system is adapted to perform an image processing method. The processing method includes: obtaining input image data, a first training result, a second training result, and an interpolation lookup table; segmenting the input image data into a plurality of feature blocks according to a total quantity of area interpolations; establishing a position mapping relationship to record the feature blocks corresponding to positions of all of the area interpolations; assigning corresponding area interpolations to the feature blocks according to the position mapping relationship; obtaining an interpolation parameter for each of the feature blocks according to the first training result, the second training result, and the area interpolation; performing block convolution on each of the interpolation parameters and the corresponding feature block to obtain an output feature result; and obtaining an output image by combining the output feature results according to the position mapping relationship.

Abstract: A photographing optical lens system includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element and an eighth lens element. The second lens element has positive refractive power. The eighth lens element has an image-side surface being concave in a paraxial region thereof, wherein the image-side surface of the eighth lens element has at least one convex shape in an off-axis region thereof, and both an object-side surface and the image-side surface thereof are aspheric. The photographing optical lens system has a total of eight lens elements. An air gap in a paraxial region is located between every two lens elements of the photographing optical lens system that are adjacent to each other.

Abstract: The invention provides a display device including a display panel and a backlight module including a light guide plate, a light source, and an optical film. The light guide plate has light incident and exit surfaces. The light source is disposed at one side of the light incident surface. The optical film is overlapped with the light exit surface, and has first optical microstructures facing the light exit surface. The display panel includes a liquid crystal cell overlapped with the light exit surface, first and second polarizers respectively disposed at two opposite sides of the liquid crystal cell, and a phase retardation film disposed between the first and second polarizers. The first polarizer is located between the liquid crystal cell and the optical film. An axial direction of an optical axis of the phase retardation film is perpendicular to an axial direction of an absorption axis of the first polarizer.

Abstract: The present disclosure describes method to form a semiconductor device with a diffusion barrier layer. The method includes forming a gate dielectric layer on a fin structure, forming a work function stack on the gate dielectric layer, reducing a carbon concentration in the work function stack, forming a barrier layer on the work function stack, and forming a metal layer over the barrier layer. The barrier layer blocks a diffusion of impurities into the work function stack, the gate dielectric layer, and the fin structure.

Abstract: A photographing system includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element with refractive power. The first lens element with positive refractive power has an object-side surface being convex in paraxial region. The second lens element with refractive power has an image-side surface being concave in paraxial region. The third, fourth and fifth lens elements all have refractive powers. The sixth lens element with refractive power has an image-side surface being concave in paraxial region, wherein the image-side surface has at least one convex shape in off-axis region, and both of two surfaces are aspheric. The seventh lens element with refractive power has an object-side surface being concave in paraxial region, and both of two surfaces are aspheric.