Abstract: The disclosure is directed to a connection re-direction method used by a UE, a connection re-direction method used by a remote access node, a user equipment using the same method, and a remote access node using the same method. In an aspect, the connection re-direction method used by a UE includes receiving a network connection failure indication; and performing a handover procedure based on a pre-configured handover configuration in response to having received the connection failure indication.

Abstract: The present disclosure provides a method of manufacturing a gas sensor. The method includes the following operations: a substrate is received; a conductor layer is formed over the substrate; the conductor layer is patterned to form a conductor with a plurality of openings by an etching operation, the openings being arranged in a repeating pattern, a minimal dimension of the opening being about 4 micrometers; and a gas-sensing film is formed over the conductor.

Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate and a membrane over the substrate. The membrane includes a piezoelectric material configured to generate charges in response to an acoustic wave. The membrane includes a via pattern having first lines that partition the membrane into slices such that the slices are separated from each other at a first region near an edge of the membrane and connected to each other at a second region.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

Abstract: An electronic device is provided, including a frame, a backlight module, a working panel, and a tape. The frame includes a side wall and a back plate. The side wall includes an outer surface. The extension direction of the back plate is different from the extension direction of the side wall. The backlight module is disposed on the back plate. The working panel and the back plate are disposed on the opposite sides of the backlight module. The tape is in contact with at least a portion of the outer surface and the working panel.

Abstract: A polyester film and a method for producing the same are provided. The polyester film includes a physically recycled polyester resin and a chemically recycled polyester resin. The physically recycled polyester resin is formed of physically recycled polyester chips, and the physically recycled polyester chips have a first intrinsic viscosity. The chemically recycled polyester resin is formed of chemically recycled polyester chips, and the chemically recycled polyester chips have a second intrinsic viscosity. The second intrinsic viscosity is less than the first intrinsic viscosity. The physically recycled polyester chips and the chemically recycled polyester chips are mixed with each other and melt extruded according to a predetermined intrinsic viscosity, so that the polyester film has the predetermined intrinsic viscosity.

Abstract: A black polyester film and a method for manufacturing the same are provided. The method for manufacturing the black polyester film includes: providing a recycled polyester material; physically regenerating a part of the recycled polyester material to form physically regenerated polyester chips having a first intrinsic viscosity; chemically regenerating another part of the recycled polyester material to form chemically regenerated polyester chips having a second intrinsic viscosity lower than the first intrinsic viscosity; mixing black regenerated polyester chips, the physically regenerated polyester chips, and the chemically regenerated polyester chips according to a predetermined intrinsic viscosity so as to form a polyester chip raw material; melting and then extruding the polyester chips raw material to form the black polyester film having the predetermined intrinsic viscosity.

Abstract: A matte polyester film and a method for manufacturing the same are provided, The method for manufacturing the matte polyester film includes: providing a recycled polyester material; physically regenerating a part of the recycled polyester material to form physically regenerated polyester chips having a first intrinsic viscosity; chemically regenerating another part of the recycled polyester material to form chemically regenerated polyester chips having a second intrinsic viscosity less than the first intrinsic viscosity; mixing matte regenerated polyester chips, the physically regenerated polyester chips, and the chemically regenerated polyester chips according to a predetermined intrinsic viscosity so as to form a polyester masterbatch material; melting and then extruding the polyester masterbatch material to obtain the matte polyester film having the predetermined intrinsic viscosity.

Abstract: A regeneration method of a nitrogen-containing carbon catalyst includes the following steps: roasting the nitrogen-containing carbon catalyst in a nitrogen-containing atmosphere to obtain a regenerated nitrogen-containing carbon catalyst. The method is a universal method, which is suitable for nitrogen-doped carbon catalysts and can be used to regenerate a nitrogen-containing carbon catalyst for producing vinyl chloride (VC) through 1,2-dichloroethane cracking. The method can greatly reduce the production cost of the catalyst and increase the service life of the catalyst, and a regeneration process thereof is fast, simple, and controllable, and does not require high temperatures.

Abstract: The disclosure discloses a heat-sealable polyester film, including a base layer and a heat-seal layer formed on the base layer. The heat-seal layer includes a physically regenerated polyester resin, a chemically regenerated polyester resin, and a modifier. The heat-sealable temperature of the heat-sealable polyester film is between 100° C. and 230° C.

Abstract: A task assigning method of adaptively assigning at least one operation task is applied for a task assigning device including a first electronic device and a second electronic device communicated with each other in a wireless manner. The task assigning method includes acquiring a first detection parameter of the first electronic device, and adjusting a task transmission rate from the first electronic device to the second electronic device in accordance with the first detection parameter.

Abstract: A white polyester film and a method for manufacturing the same are provided. The method for manufacturing the white polyester film includes: providing a recycled polyester material; physically regenerating a part of the recycled polyester material to form physically regenerated polyester chips having a first intrinsic viscosity; chemically regenerating another part of the recycled polyester material to form chemically regenerated polyester chips having a second intrinsic viscosity less than the first intrinsic viscosity; mixing white regenerated polyester chips, the physically regenerated polyester chips, and the chemically regenerated polyester chips according to a predetermined intrinsic viscosity so as to form a polyester masterbatch material; melting and extruding the polyester masterbatch material to obtain the white polyester film having the predetermined intrinsic viscosity.

Abstract: A multi-shield plate includes a plate having a substantially flat upper surface and a substantially flat lower surface, a plurality of first windows formed in the plate and extending through the plate from the upper surface to the lower surface, and a plurality of vapor shields mounted to the plate, each vapor shield of the plurality of vapor shields configured to prevent passage of a vapor through a corresponding window of the plurality of windows. The multi-shield plate includes an aperture formed in the plate, the aperture aligned with a first window of the plurality of windows along an axis corresponding to the upper surface.

Abstract: A semiconductor device includes: a first fin and a second fin extending from a substrate and an epitaxial source/drain region. The epitaxial source/drain region includes a first portion grown on the first fin and a second portion grown on the second fin, and the first portion and the second portion are joined at a merging boundary. The epitaxial source/drain region further includes a first subregion extending from a location level with a highest point of the epitaxial source/drain region to a location level with a highest point of the merging boundary, a second subregion extending from the location level with the highest point of the merging boundary to a location level with a lowest point of the merging boundary, and a third subregion extending from the location level with the lowest point of the merging boundary to a location level with a top surface of an STI region.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a first dielectric layer formed over the substrate. The semiconductor device structure also includes a first movable membrane formed over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion and a first edge portion connecting to the first corrugated portion. The semiconductor device structure further includes a second dielectric layer formed over the first movable membrane. In addition, the first edge portion is sandwiched between the first dielectric layer and the second dielectric layer, the first corrugated portion is partially sandwiched between the first dielectric layer and the second dielectric layer and is partially exposed by a cavity, and a bottom surface of the first corrugated portion is lower than a bottom surface of the first edge portion.

Abstract: An augmented reality screen system includes an augmented reality device and a host. The augmented reality device is configured to take a physical mark through a camera. The host is configured to receive the physical mark, determine position information and rotation information of the physical mark, and fetch a virtual image from a storage device through a processor of the host. The processor transmits an adjusted virtual image to the augmented reality device according to the position information and the rotation information, and the augmentation device projects the adjusted virtual image to a display of the augmented reality device. The adjusted virtual image becomes a virtual extended screen, and the virtual extended screen and the physical mark are simultaneously displayed on the display of the augmented reality device.

Abstract: In one example, an adapter card may include a circuit board having a male interface to be inserted into a discrete graphics card slot and a peripheral component interconnect express (PCIe) slot to communicatively couple a PCIe device. Further, the adapter card may include a voltage converter circuit disposed on the circuit board to convert a first voltage associated with the discrete graphics card slot to a second voltage corresponding to the PCIe device and a level shifter circuit disposed on the circuit board to modify a signal level in the discrete graphics card slot to a signal level in the PCIe device.

Abstract: In one example, a device housing is described, which may include a base substrate and ion-exchanged glass beads disposed on an outer surface of the base substrate.

Abstract: In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.

Abstract: A rotary wire-receiving rack comprises a winding structure, a shaft, a first handle, a lid, a locking slider, and a second handle. The winding structure includes two bars arranged longitudinally in parallel and two rods arranged horizontally in parallel for winding cables. Both ends of the two rods are linked to the bars respectively. The shaft is arranged parallel to and located between the rods. The shaft is pivoted on the bars. The first handle and the lid are respectively fixed at the two ends of the shaft. The lid has a locking hole, and the locking slider is slidably installed on the rod near the locking hole. The locking slider is formed with a locking pin that cooperates with the locking hole. The second handle is pivoted at the end of the bar which closing to the locking hole and having a recess for clamping a cable.