Patents by Inventor Wen Cheng

Wen Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure and formation method of semiconductor device structure with gate stack
    Patent number: 10164050
    Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate electrode over the semiconductor substrate. The semiconductor device structure also includes a source/drain structure adjacent to the gate electrode. The semiconductor device structure further includes a spacer element over a sidewall of the gate electrode, and the spacer element has an upper portion having a first exterior surface and a lower portion having a second exterior surface. Lateral distances between the first exterior surface and the sidewall of the gate electrode are substantially the same. Lateral distances between the second exterior surface and the sidewall of the gate electrode increase along a direction from a top of the lower portion towards the semiconductor substrate.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Bo-Feng Young, Che-Cheng Chang, Mu-Tsang Lin, Tung-Wen Cheng, Zhe-Hao Zhang
  • MEMS devices and fabrication methods thereof
    Patent number: 10155655
    Abstract: A device includes a carrier having a plurality of cavities, a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises a shielding layer on the carrier and coupled to ground, a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate and a moving element over the bottom electrode and a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hua Chu, Chun-Wen Cheng, Te-Hao Lee, Chung-Hsien Lin
  • Display apparatus and display control method thereof
    Patent number: 10157583
    Abstract: A display apparatus includes a plurality of first pixel units and a plurality of second pixel units. Each of the first pixel units includes at least one first color sub-pixel, at least one second color sub-pixel, at least one third color sub-pixel and at least one fourth color sub-pixel arranged in a first configuration. Each of the second pixel units includes the at least one first color sub-pixel, the at least one second color sub-pixel, the at least one third color sub-pixel and the at least one fourth color sub-pixel arranged in a second configuration different from the first configuration. The first pixel units and the second pixel units are alternately disposed to make all of the pixel units adjacent to each of the first pixel units be the second pixel units, and all of the pixel units adjacent to each of the second pixel units be the first pixel units.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: December 18, 2018
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Shih-Ting Huang, Yu-Chin Chu, Sheng-Wen Cheng
  • Fluid deposition appartus and method
    Patent number: 10155244
    Abstract: The present disclosure relates to a micro-fluidic probe card that deposits a fluidic chemical onto a substrate with a minimal amount of fluidic chemical waste, and an associated method of operation. In some embodiments, the micro-fluidic probe card has a probe card body with a first side and a second side. A sealant element, which contacts a substrate, is connected to the second side of the probe card body in a manner that forms a cavity within an interior of the sealant element. A fluid inlet, which provides a fluid from a processing tool to the cavity, is a first conduit extending between the first side and the second side of the probe card body. A fluid outlet, which removes the fluid from the cavity, is a second conduit extending between the first side and the second side of the probe card body.
    Type: Grant
    Filed: September 16, 2013
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wen Cheng, Jung-Huei Peng, Yi-Shao Liu, Fei-Lung Lai, Shang-Ying Tsai
  • Getter, MEMS device and method of forming the same
    Patent number: 10155214
    Abstract: A getter is provided. The getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum. A MEMS device is provided. The MEMS device includes a substrate and a getter over the substrate. The getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum. A method of forming a MEMS device is provided. The method includes the following operations: providing a substrate; and providing a getter over the substrate, wherein the getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum, and wherein all of the percentages are atomic percentages.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chin-Wei Liang, Cheng-Yuan Tsai, Chun-Wen Cheng, Chia-Shiung Tsai
  • Vacuum sealed MEMS and CMOS package
    Patent number: 10155659
    Abstract: A vacuum sealed MEMS and CMOS package and a process for making the same may include a capping wafer having a surface with a plurality of first cavities, a first device having a first surface with a second plurality of second cavities, a hermetic seal between the first surface of the first device and the surface of the capping wafer, and a second device having a first surface bonded to a second surface of the first device. The second device is a CMOS device with conductive through vias connecting the first device to a second surface of the second device, and conductive bumps on the second surface of the second device. Conductive bumps connect to the conductive through vias and wherein a plurality of conductive bumps connect to the second device. The hermetic seal forms a plurality of micro chambers between the capping wafer and the first device.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Cheng, Yi-Chuan Teng, Hung-Chia Tsai, Chia-Hua Chu
  • ROTARY EMULSIFICATION DEVICE STRUCTURE
    Publication number: 20180353912
    Abstract: A rotary emulsification device structure includes a housing, a emulsification element and a rotary disk. The housing includes a chamber with a first inlet, a second inlet and an outlet. The emulsification element is disposed in the chamber and divides the chamber into a first space and a second space. The first inlet is disposed to communicate with the first space, and the second inlet and the outlet are disposed to communicate with the second space. The emulsification element includes a plurality of pores communicating with the first space and the second space. The rotary disk is disposed in the second space and rotates in the second space when being driven. The rotary disk includes a plurality of through holes.
    Type: Application
    Filed: April 20, 2018
    Publication date: December 13, 2018
    Applicant: Tamkang University
    Inventors: Tung-Wen Cheng, Su-En Wu
  • SEMICONDUCTOR MANUFACTURING METHOD
    Publication number: 20180346319
    Abstract: A method of manufacturing a semiconductor structure includes receiving a substrate, receiving a heater, receiving an electrode, and receiving a sensing material. The substrate have a first surface, a second surface opposite to the first surface and a plurality of vias extending from the second surface toward the first surface and filled with a conductive or semiconductive material and a first oxide layer, the first oxide layer surrounding the conductive or semiconductive material in the plurality of vias, and a second oxide layer disposed over the first surface and the second surface. The heater is disposed within a membrane over the first surface of the substrate and electrically connected with the substrate. The electrode is over the heater and the membrane; and the sensing material covers a portion of the electrode.
    Type: Application
    Filed: July 26, 2018
    Publication date: December 6, 2018
    Inventors: CHUN-WEN CHENG, CHIA-HUA CHU, FEI-LUNG LAI, SHIANG-CHI LIN
  • FinFETs and Methods of Forming FinFETs
    Publication number: 20180350809
    Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a first portion of the isolation region being between the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a gate seal spacer on sidewalls of the gate structure, a first portion of the gate seal spacer being on the first portion of the isolation region between the first fin and the second fin, and a source/drain region on the first fin and the second fin adjacent the gate structure.
    Type: Application
    Filed: July 31, 2018
    Publication date: December 6, 2018
    Inventors: Tung-Wen Cheng, Chih-Shan Chen, Wei-Yang Lo
  • VAPOR SHIELD REPLACEMENT SYSTEM AND METHOD
    Publication number: 20180350640
    Abstract: A multi-shield plate includes a plate having a substantially flat upper surface and a substantially flat lower surface, a plurality of first windows formed in the plate and extending through the plate from the upper surface to the lower surface, and a plurality of vapor shields mounted to the plate, each vapor shield of the plurality of vapor shields configured to prevent passage of a vapor through a corresponding window of the plurality of windows. The multi-shield plate includes an aperture formed in the plate, the aperture aligned with a first window of the plurality of windows along an axis corresponding to the upper surface.
    Type: Application
    Filed: October 31, 2017
    Publication date: December 6, 2018
    Inventors: Ping-Tse LIN, Chun-Chih LIN, Wen-Cheng LIEN, Monica HO
  • Method for forming biochips and biochips with non-organic landings for improved thermal budget
    Patent number: 10145847
    Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: December 4, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hua Chu, Allen Timothy Chang, Ching-Ray Chen, Yi-Hsien Chang, Yi-Shao Liu, Chun-Ren Cheng, Chun-Wen Cheng
  • Ultra high vacuum cryogenic pumping apparatus with nanostructure material
    Patent number: 10145371
    Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: December 4, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Surendra Babu Anantharaman, Wen-Cheng Yang, Chung-En Kao, Victor Y. Lu, Wei Chin
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20180342619
    Abstract: A semiconductor device includes a Fin FET device. The Fin FET device includes a first fin structure extending in a first direction and protruding from an isolation insulating layer, a first gate stack including a first gate electrode layer and a first gate dielectric layer, covering a portion of the first fin structure and extending in a second direction perpendicular to the first direction, and a first source and a first drain, each including a first stressor layer disposed over the first fin structure. The first fin structure and the isolation insulating layer are disposed over a substrate. A height Ha of an interface between the first fin structure and the first stressor layer measured from the substrate is greater than a height Hb of a lowest height of the isolation insulating layer measured from the substrate.
    Type: Application
    Filed: August 6, 2018
    Publication date: November 29, 2018
    Inventors: Cheng-Yen YU, Che-Cheng CHANG, Tung-Wen CHENG, Zhe-Hao ZHANG, Bo-Feng YOUNG
  • MEMS DEVICE WITH ENHANCED SENSING STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20180339899
    Abstract: The present disclosure provides a semiconductor device, which includes a first substrate comprising an upper surface and a second substrate disposed over the first substrate. The semiconductor device also includes a first electrode disposed in the second substrate and configured to move in a direction substantially parallel to the upper surface in response to a pressure difference, and a second electrode disposed in the second substrate. The second electrode is configured to provide a capacitance in conjunction with the first electrode.
    Type: Application
    Filed: May 25, 2017
    Publication date: November 29, 2018
    Inventors: CHING-KAI SHEN, WEN-CHUAN TAI, CHIA-MING HUNG, HSIANG-FU CHEN, JUNG-HUEI PENG, CHUN-WEN CHENG
  • PROTECTION COVER AND ELECTRONIC APPARATUS
    Publication number: 20180341294
    Abstract: Provided is a protection cover, applicable to an electronic device. The protection cover includes a cover body and at least one sensing module. The cover body has a view window, wherein the cover body is suitable for covering a display surface of the electronic device and exposing a part of the display surface via the view window. The at least one sensing module is provided on the cover body and aligns with the view window, wherein the at least one sensing module is suitable for sensing at least one object in the view window to generate a touch signal, and transmitting the touch signal to the electronic device.
    Type: Application
    Filed: May 23, 2018
    Publication date: November 29, 2018
    Applicant: COMPAL ELECTRONICS, INC.
    Inventors: Shu-Hsien Chu, Yu-Wen Cheng, Ming-Chung Liu
  • Method for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices using a flat surface above a sacrificial layer
    Patent number: 10138116
    Abstract: An integrated circuit (IC) with an integrated microelectromechanical systems (MEMS) structure is provided. In some embodiments, the IC comprises a semiconductor substrate, a back-end-of-line (BEOL) interconnect structure, the integrated MEMS structure, and a cavity. The BEOL interconnect structure is over the semiconductor substrate, and comprises wiring layers stacked in a dielectric region. Further, an upper surface of the BEOL interconnect structure is planar or substantially planar. The integrated MEMS structure overlies and directly contacts the upper surface of the BEOL interconnect structure, and comprises an electrode layer. The cavity is under the upper surface of the BEOL interconnect structure, between the MEMS structure and the BEOL interconnect structure.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: November 27, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wen Cheng, Chia-Hua Chu
  • MANUFACTURING METHOD FOR A CAR SAFETY SEAT
    Publication number: 20180334067
    Abstract: A manufacturing method for a car safety seat includes the following steps: providing a mold and disposing a main body of the car safety seat into the mold, and injecting a foam material into a cavity of the mold and foaming the foam material so as to form a flexible layer integrated with the main body. A pressure in the cavity is between 1.5 bar and 5.0 bar. The manufacturing method disposes the main body into the mold and directly forms a flexible layer on the main body, so that the flexible layer ensures safety and comfort of the car safety seat while saves the necessity to dispose a seat pad or a cushion and fixing structures on the main body, and thereby reduces the cost and the work-hour of assembly, and the overall weight of the car safety seat can be reduced by omitting the fixing structures.
    Type: Application
    Filed: May 14, 2018
    Publication date: November 22, 2018
    Inventors: Fengxiang Yan, Kai-Wen Cheng
  • Semiconductor Device and Manufacturing Method Thereof
    Publication number: 20180337180
    Abstract: A semiconductor device includes a semiconductor substrate, a plurality of semiconductor fins, a gate stack and an epitaxy structure. The semiconductor fins are present on the semiconductor substrate. The semiconductor fins respectively include recesses therein. The gate stack is present on portions of the semiconductor fins that are adjacent to the recesses. The epitaxy structure is present across the recesses of the semiconductor fins. The epitaxy structure includes a plurality of corners and at least one groove present between the corners, and the groove has a curvature radius greater than that of at least one of the corners.
    Type: Application
    Filed: July 31, 2018
    Publication date: November 22, 2018
    Inventors: Tung-Wen Cheng, Chih-Shan Chen, Mu-Tsang Lin
  • Method for fabricating MEMS switch with reduced dielectric charging effect
    Patent number: 10134552
    Abstract: The present disclosure provides methods of fabricating a micro-electro-mechanical systems (MEMS) switch. The methods include providing a substrate, forming a first dielectric layer disposed above the substrate, forming a bump above the first dielectric layer, providing a movable member including a top actuation electrode, and forming at least one support member that includes the first dielectric layer and is directly below the top actuation electrode. The top actuation electrode is electrically coupled to the bump.
    Type: Grant
    Filed: July 29, 2014
    Date of Patent: November 20, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Hua Chu, Chung-Hsien Lin, Chun-Wen Cheng
  • ELECTRONIC CONTINUOUSLY VARIABLE TRANSMISSION (ECVT) SYSTEM AND CONTROL METHOD FOR THE SAME
    Publication number: 20180328483
    Abstract: An electronic continuously variable transmission (ECVT) system applicable to a motorcycle includes a first speed sensor, second speed sensor, continuously variable transmission (CVT) and control unit. The control unit receives a user control signal and accordingly controls a speed-changing state of the CVT. While the motorcycle is operating in a manual-operation mode, the control unit predicts, according to the user control signal, a first speed signal sent from the first speed sensor, and a second speed signal sent from the second speed sensor, whether the next gear indicated by the shift request signal will cause the motorcycle to move unsteadily. If so, the control unit ignores the shift request signal and refuses to perform gear shifting. If not, the control unit sends at least a shift control signal to the CVT so that the CVT performs gear shifting.
    Type: Application
    Filed: March 9, 2018
    Publication date: November 15, 2018
    Inventor: KAI-WEN CHENG